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Simulation Tool for the Prediction of Heavy Ion Cross Section for Innovative 130 nm SRAMs

 V. Correas , Frédéric Saigné , B. Sagnes , J. Boch , G. Gasiot , et al.
9th European Conference on Radiation and its Effects on Components and Systems, 2007, Deauville, France
Communication dans un congrès hal-01822429v1

Alpha induced SEU and MBU rates evaluation for advanced SRAMs by Monte-Carlo simulations

 T. Mérelle , Frédéric Saigné , B. Sagnes , G. Gasiot , P. Roche , et al.
8th European Conference on Radiation and its Effects on Components and Systems, 2005, Cap d'Agde, France
Communication dans un congrès hal-01807177v1

Measurement and characterization of low frequency noise collector current in 0.13 µm SiGe:C HBTs

 M. Seif , F. Pascal , B. Sagnes , A. Hoffmann , S. Haendler , et al.
2015 International Conference on Noise and Fluctuations (ICNF), 2015, Xian, China
Communication dans un congrès hal-01907409v1

Neutron-Induced SEU in SRAMs: Simulations With n-Si and n-O Interactions

 D. Lambert , J. Baggio , G. Hubert , V. Ferlet-Cavrois , O. Flament , et al.
42th IEEE Nuclear Space and Radiation Effects Conference, 2005, Seattle, United States
Communication dans un congrès hal-01807126v1

Neutron induced SEU in bulk SRAMs in terrestrial environment : simulations and experiments

 D. Lambert , J. Baggio , V. Ferlet-Cavrois , O. Flament , J.-M. Palau , et al.
41th IEEE Nuclear Space and Radiation Effects Conference, 2004, Atlanta, United States
Communication dans un congrès hal-01806826v1

Geometrical Magnetoresistance in Multi-Gate Fully Depleted SOI Structures

 C. Navarro , Sung-Jae Chang , Maryline Bawedin , François Andrieu , Bruno Sagnes , et al.
227th ECS Meeting, 2015, Chicago, United States. ⟨10.1149/06605.0251ecst⟩
Communication dans un congrès hal-01907398v1

Study of low frequency noise in advanced SiGe : C heterojunction bipolar transistors

 M. Seif , F. Pascal , B. Sagnes , A. Hoffmann , S. Haendler , et al.
44th European Solid State Device Research Conference (ESSDERC), 2014, Venise, Italy
Communication dans un congrès hal-01906161v1

Simulation studies of the parasitic structures involved in the SEU mechanisms in SRAMs

 B. Sagnes , Frédéric Saigné , J.-M. Palau , Jean-Luc Autran , M.-C. Calvet
5th European Workshop on Radiation and its Effects on Components and Systems, 2004, Madrid, Spain
Communication dans un congrès hal-01806844v1

Simultaneous evaluation of TID and displacement damage dose using a single OSL sensor

 P. Garcia , J.-R. Vaillé , D. Benoit , H. Chabane , G. Berger , et al.
IEEE Transactions on Nuclear Science, 2006, 53 (6), pp.3713-3717. ⟨10.1109/TNS.2006.885003⟩
Article dans une revue hal-00329597v1

Criterion for SEU Occurrence in SRAM Deduced From Circuit and Device Simulations in Case of Neutron-Induced SER

 T. Mérelle , H. Chabane , J.-M. Palau , K. Castellani-Coulié , Frédéric Wrobel , et al.
IEEE Transactions on Nuclear Science, 2005, 52 (4), pp.1148-1155. ⟨10.1109/TNS.2005.852319⟩
Article dans une revue hal-00328654v1

Retention time enhancement in FD 1T-DRAM.

 C. Navarro , M. Bawedin , K. Romanjek , J. Cluzel , F. Andrieu , et al.
EuroSOI, Jan 2013, Paris, France. pp.7.3
Communication dans un congrès hal-01073678v1

Study of a SOI SRAM Sensitivity to SEU by 3-D Device Simulation

 K. Castellani-Coulié , B. Sagnes , Frédéric Saigné , J.-M. Palau , M.-C. Calvet , et al.
7th European Conference on Radiation and its Effects on Components and Systems, 2003, Noordwijk, Netherlands
Communication dans un congrès hal-01806785v1

Temperature Effect Study on Heavy-Ion Induced Parasitic Current on SRAM by Device Simulation

 D. Truyen , J. Boch , B. Sagnes , N. Renaud , E. Leduc , et al.
6th European Workshop on Radiation and its Effects on Components and Systems, 2006, Athènes, Greece
Communication dans un congrès hal-01808291v1

Neutron-induced SEU in bulk SRAMs in terrestrial environment: simulations and experiments

 D. Lambert , J. Baggio , V. Ferlet-Cavrois , O. Flament , J.-M. Palau , et al.
IEEE Transactions on Nuclear Science, 2004, 51 (6), pp.3435-3441. ⟨10.1109/TNS.2004.839133⟩
Article dans une revue hal-00330001v1

Etude du bruit basse fréquence dans les transistors bipolaires à hétérojonction Si/SiGe:C développés pour des applications MMW et Terahertz

 M. Seif , B. Sagnes , F. Pascal , A. Hoffmann , S. Haendler , et al.
18èmes Journées Nationales Microondes, 2013, Paris, France
Communication dans un congrès hal-01906129v1

Low frequency noise characterization and modeling of SiGe HBT featuring LASER annealing in a 55-nm CMOS node

 J. Elbeyrouthy , A. Vauthelin , Bruno Sagnes , F. Pascal , Alain Hoffmann , et al.
25th International Conference on Noise and Fluctuations (ICNF 2019), Jun 2019, Neuchâtel, Switzerland. ⟨10.5075/epfl-ICLAB-ICNF-269248⟩
Communication dans un congrès hal-02381453v1

Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

 T. Mérelle , Frédéric Saigné , B. Sagnes , G. Gasiot , P. Roche , et al.
IEEE Transactions on Nuclear Science, 2005, 52 (2) (5), pp.1538-1544. ⟨10.1109/TNS.2005.855823⟩
Article dans une revue hal-00328657v1

Simultaneous Evaluation of TID and Displacement Damage Dose Using a Single OSL Sensor

 P. Garcia , J.-R. Vaillé , D. Benoit , G. Berger , K. Idri , et al.
43th IEEE Nuclear Space and Radiation Effects Conference, 2006, Ponte Vedra Beach, United States
Communication dans un congrès hal-01808277v1

Characterization and modeling of low frequency noise in 0.13 µm BiCMOS SiGe: C heterojunction bipolar trasnsistors

 M. Seif , F. Pascal , B. Sagnes , S. Haendler
10th Conference on Ph. D. Research in Microelectronics and Electronics - PRIME 2014, 2014, Grenoble, France
Communication dans un congrès hal-01906169v1

Comparison of nmos and pmos transistor sensitivity to seu in srams by device simulation

 K. Castellani-Coulie , Bruno Sagnes , Frédéric Saigné , J-M. Palau , M-C. Calvet , et al.
IEEE Transactions on Nuclear Science, 2003, 50 (6), pp.2239-2244. ⟨10.1109/TNS.2003.821583⟩
Article dans une revue hal-02025137v1

Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs studied by device simulation

 K. Castellani-Coulié , B. Sagnes , Frédéric Saigné , J.-M. Palau , M.-C. Calvet , et al.
40th IEEE Nuclear Space and Radiation Effects Conference, 2003, Monterey, United States
Communication dans un congrès hal-01806758v1

Temperature Effect on the Heavy-Ion Induced Single-Event Transients Propagation on a CMOS Bulk 0.18 µm Inverters chain

 D. Truyen , J. Boch , B. Sagnes , N. Renaud , E. Leduc , et al.
9th European Conference on Radiation and its Effects on Components and Systems, 2007, Deauville, France
Communication dans un congrès hal-01822424v1

Innovative simulations of heavy ion cross-sections in a 130 nm CMOS SRAM. Influence of the passivation layers and PMOS contribution

 V. Correas , Frédéric Saigné , B. Sagnes , J. Boch , G. Gasiot , et al.
IEEE Transactions on Nuclear Science, 2007, 54 (6), pp.2413-2418. ⟨10.1109/TNS.2007.910038⟩
Article dans une revue hal-00327106v1

Geometrical Magnetoresistance in Multi-Gate FDSOI Structures

 C. Navarro , S.-J. Chang , M. Bawedin , F. Andrieu , B. Sagnes , et al.
227th ECS Meeting: 17th Int.Symposium on Advanced CMOS-Compatible Semiconductor Devices, Y. Omura, J.A. Martino, J.P. Raskin, S. Selberherr, H. Ishi, F. Gamiz and B. Nguyen, May 2015, Chigaco, United States
Communication dans un congrès hal-02007786v1

Innovative Simulations of Heavy Ion cross-sections in a 130nm CMOS SRAM. Influence of the passivation layers and PMOS contribution

 V. Correas , Frédéric Saigné , B. Sagnes , J. Boch , G. Gasiot , et al.
44th IEEE Nuclear Space and Radiation Effects Conference, 2007, Honolulu, United States
Communication dans un congrès hal-01822422v1

Low frequency noise measurements of advanced BiCMOS SiGeC Heterojunction Bipolar Transistors used for mm-Wave to terahertz applications

 M. Seif , F. Pascal , B. Sagnes , A. Hoffmann , S. Haendler , et al.
Noise and Fluctuations (ICNF), 2013 22nd International Conference on, 2013, Montpellier, France
Communication dans un congrès hal-01656878v1

Localization of 1/f noise sources in Si/SiGe:C HBTs

 Marcelino Seif , Fabien Pascal , Bruno Sagnes , J. Elbeyrouthy , Alain Hoffmann , et al.
8th International Conference on Unsolved Problems on Noise - UPON 2018, Jul 2018, Gdansk, Poland
Communication dans un congrès hal-02053263v1

Prediction of Multiple Cell Upset Induced by Heavy Ions in a 90 nm Bulk SRAM

 V. Correas , Frédéric Saigné , B. Sagnes , Frédéric Wrobel , J. Boch , et al.
IEEE Transactions on Nuclear Science, 2009, 56 (4), pp.2050 - 2055. ⟨10.1109/TNS.2009.2013622⟩
Article dans une revue hal-01631580v1

Effects of Total Ionizing Dose on I-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors

 J. Elbeyrouthy , A. Vauthelin , M. Seif , Bruno Sagnes , F. Pascal , et al.
RADECS 2019, 30th European Conference on Radiation and its Effects on Components and Systems, Sep 2019, Montpellier, France
Communication dans un congrès hal-02380234v1

Temperature Effect on Heavy-Ion Induced Parasitic Current on SRAM by Device Simulation: Effect on SEU Sensitivity

 D. Truyen , J. Boch , B. Sagnes , N. Renaud , E. Leduc , et al.
IEEE Transactions on Nuclear Science, 2007, 54 (4), pp.1025-1029. ⟨10.1109/TNS.2007.894298⟩
Article dans une revue hal-00327115v1
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