Keywords

Compact modeling OxRRAM Atomic force microscopy 1T1R Memory design Laser Titanium-based electrodes Security Integrity Switching memory Resistive RAM HfO2 switchable layer Variability Thermal Attacks SONOS Resistive Switching Complementary cell Non-volatile memory Non-volatile RRAM
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Co-authors

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Number of documents

66

Marc Bocquet - Enseignant Chercheur

Maître de Conférences - 63ème section CNU - HDR

Unités de rattachement actuelles

Laboratoire de recherche :

Institut Matériaux Microélectronique Nanosciences de Provence (Im2np)
Im2np, UMR CNRS 7334 et Université d'Aix-Marseille http://www.im2np.fr
Equipe Mémoires - Département ASCE

Composante d'enseignement :

Polytech Marseille http://polytech.univ-amu.fr/
Département Microélectronique & Télécommunications (MT)

Responsabilités Administratives

Laboratoire

  • Depuis 2017 : Co-responsable de l'équipe Mémoires de l'IM2NP
  • Depuis 2017 : Membre du conseil scientifique de l'IM2NP

Unité de Formation

  • Depuis 2014 : Responsable d'année du département MT de Polytech Marseille
  • 2012-2014 : Responsable d'un parcours d'enseignement au département MT de Polytech Marseille

Diplômes

  • Juin 2017 : Habilitation à diriger les recherches (HDR), Université d’Aix-Marseille.
  • Novembre 2009 : Thèse de doctorat en Micro&NanoElectronique de l'INPG, Grenoble.
  • 2005-2006 : Master NanoTechnologies Université Joseph Fourier, Grenoble, mention bien
  • 2003-2006 : Diplôme d'ingénieur ENSERG - INPG, Grenoble, mention très bien

Activité d'enseignement

Volume : Environ 2250 HETD enseignées depuis 2006
Niveaux : Cycle préparatoire (2A), école d'ingénieur (3A-4A-5A), formation continue
Matières enseignés : Base de l'électronique numérique, microcontrôleur, électrotechnique, physique et technologie des  composants à semi-conducteur, mémoires non-volatiles

Thématiques de recherche

Mots-clefs thématiques :

Technologies mémoires émergentes, micro-nanoélectronique, électronique flexible, mémoires non-volatiles, mémoires résistives, RRAM, CBRAM, PCM, FRAM

Compétences :

Microscopie champ proche (AFM, EFM, KPFM, C-AFM), caractérisation électrique sous pointes, modélisation physique, modélisation compacte

Thèmes :

  • Modélisation et caractérisation des mémoires innovantes : RRAM, PCRAM, FRAM
  • Développement technologique de dispositifs mémoires sur support souple\\
  • Optimisation de nouvelles architectures mémoires de type EEPROM/Flash

Projets de recherche

Implication en tant que participant (P) ou coordinateur (C) :

  • ANR Neuronic (2019-2023) (C)
  • ANR Reflex (2012-2015) (P)
  • ANR Dipmem (2012-2015) (P)
  • IPCEI Nano2022 - PCM (2019-2022) (C)
  • Carnot POLYMEM (2014) (P)

Expertises Nationales

  • Participation à des jurys de thèse : 3 en tant que rapporteur et 1 en tant que Examinateur
  • Depuis 2016 : Expertise de dossiers AGIR-PEPS, ANR, IRS.
  • 2013 : Membre de la commission de Spécialité de la 63ème section collège B

Encadrement doctoral

  • 3 thèses en co-encadrement soutenues
  • 3 thèses en co-encadrement en cours.
  • Co-encadrement de thèses sous contrat CIFRE et CTBU CEA.

Dissémination scientifique

  • 89 publications
  • 25 revues internationales à comité de lecture.
  • 54 proceedings de conférences internationales à comité de lecture.
  • 2 articles de vulgarisation scientifiques.
  • 7 conférences invitées
  • 1 brevet.

Journal articles26 documents

  • Corentin Pigot, Fabien Gilibert, Marina Reyboz, Marc Bocquet, Paola Zuliani, et al.. Phase-Change Memory: A Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching. Japanese Journal of Applied Physics, Japan Society of Applied Physics, In press, 57 (4S), 〈http://iopscience.iop.org/article/10.7567/JJAP.57.04FE13〉. 〈10.7567/JJAP.57.04FE13〉. 〈hal-01737915〉
  • Corentin Pigot, Marc Bocquet, Fabien Gilibert, Marina Reyboz, Olga Cueto, et al.. Comprehensive Phase-Change Memory Compact Model for Circuit Simulation. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, pp.1 - 8. ⟨10.1109/TED.2018.2862155⟩. ⟨hal-01869957⟩
  • V. Della Marca, J. Postel-Pellerin, T. Kempf, A. Regnier, P. Chiquet, et al.. Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction. Microelectronics Reliability, Elsevier, 2018, 88-90, pp.159 - 163. ⟨10.1016/j.microrel.2018.06.116⟩. ⟨hal-01900789⟩
  • Jean-Michel Portal, Marc Bocquet, Santhosh Onkaraiah, Mathieu Moreau, Hassen Aziza, et al.. Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO$_2$ )/28 nm FDSOI CMOS Technology. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2017, 16, pp.677 - 686. ⟨10.1109/TNANO.2017.2703985⟩. ⟨hal-01745418⟩
  • Sarpi Brice, Nabil Rochdi, Rachid Daineche, Maxime Bertoglio, Christophe Girardeaux, et al.. Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11–1)/Si (100) heterostructure. Surface Science Letters, Elsevier, 2015, 642, pp.L1-L5. 〈http://www.sciencedirect.com/science/article/pii/S003960281500223X〉. 〈10.1016/j.susc.2015.08.003〉. 〈hal-01496546〉
  • A. Prakash, D. Deleruyelle, J. Song, Marc Bocquet, H. Hwang. Resistance controllability and variability improvement in a TaO x -based resistive memory for multilevel storage application. Applied Physics Letters, American Institute of Physics, 2015, 106 (23), pp.233104. ⟨10.1063/1.4922446⟩. ⟨hal-01737306⟩
  • Hassen Aziza, Marc Bocquet, Mathieu Moreau, J-M Portal. A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAM. Solid-State Electronics, Elsevier, 2015, 103, pp.73 - 78. ⟨10.1016/j.sse.2014.09.005⟩. ⟨hal-01737300⟩
  • Jean-Michel Portal, Marc Bocquet, Mathieu Moreau, Hassen Aziza, Damien Deleruyelle, et al.. An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies. Journal of Electronic Science and Technology, 2014, 12 (2), pp.173 - 181. 〈10.3969/j.issn.1674-862X.2014.02.007〉. 〈hal-01745646〉
  • W. Zhao, M. Portal, W. Kang, M. Moreau, Y. Zhang, et al.. Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells. Journal of Parallel and Distributed Computing, Elsevier, 2014, 74 (6), pp.2484 - 2496. 〈10.1016/j.jpdc.2013.08.004〉. 〈hal-01744000〉
  • Marc Bocquet, Hassen Aziza, Weisheng Zhao, Yue Zhang, Santhosh Onkaraiah, et al.. Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM). Journal of Low Power Electronics and Applications, MDPI, 2014, 4 (1), pp.1-14. ⟨10.3390/jlpea4010001⟩. ⟨hal-01737320⟩
  • Weisheng Zhao, Mathieu Moreau, Erya Deng, Yue Zhang, Jean-Michel Portal, et al.. Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories. IEEE Transactions on Circuits and Systems I: Regular Papers, IEEE, 2014, 61 (2), pp.443 - 454. ⟨10.1109/TCSI.2013.2278332⟩. ⟨hal-01743999⟩
  • Ogun Turkyilmaz, Santhosh Onkaraiah, Marina Reyboz, Fabien Clermidy, H. Hraziia, et al.. RRAM-based FPGA for “Normally Off, Instantly On” applications. Journal of Parallel and Distributed Computing, Elsevier, 2014, 74, pp.2441 - 2451. 〈10.1016/j.jpdc.2013.08.003〉. 〈hal-01743243〉
  • Marc Bocquet, Damien Deleruyelle, Hassen Aziza, Christophe Muller, Jean-Michel Portal, et al.. Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2014, 61 (3), pp.674 - 681. ⟨10.1109/TED.2013.2296793⟩. ⟨hal-01737291⟩
  • H. Hraziia, Adam Makosiej, Giorgio Palma, Jean-Michel Portal, Marc Bocquet, et al.. Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up. Solid-State Electronics, Elsevier, 2013, 90, pp.99-106. ⟨10.1016/j.sse.2013.02.045⟩. ⟨hal-01744003⟩
  • Hassen Aziza, Marc Bocquet, Jean-Michel Portal, Mathieu Moreau, Christophe Muller. A novel test structure for OxRRAM process variability evaluation. Microelectronics Reliability, Elsevier, 2013, 53 (9-11), pp.1208 - 1212. ⟨10.1016/j.microrel.2013.07.012⟩. ⟨hal-01745650⟩
  • Jean-Michel Portal, Marc Bocquet, Damien Deleruyelle, Christophe Muller. Non-Volatile Flip-Flop Based on Unipolar ReRAM for Power-Down Applications. Journal of Low Power Electronics, American Scientific Publishers, 2012, 8 (1), pp.1 - 10. 〈10.1166/jolpe.2012.1172〉. 〈hal-01745507〉
  • Guillaume Gay, Gabriel Molas, Marc Bocquet, Eric Jalaguier, Marc Gély, et al.. Performance and Modeling of Si-Nanocrystal Double-Layer Memory Devices With High-k Control Dielectrics. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59 (4), pp.933 - 940. ⟨10.1109/TED.2012.2182769⟩. ⟨hal-01804667⟩
  • D. Deleruyelle, Magalie Putero, T. Ouled-Khachroum, Marc Bocquet, M.V. Coulet, et al.. Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate. Solid-State Electronics, Elsevier, 2012, ⟨10.1016/j.sse.2012.06.010⟩. ⟨emse-00767177⟩
  • Marc Bocquet, Damien Deleruyelle, Christophe Muller, Jean-Michel Portal. Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories. Applied Physics Letters, American Institute of Physics, 2011, 98 (26), ⟨10.1063/1.3605591⟩. ⟨hal-01779321⟩
  • Gabriel Molas, J.P. Colonna, R. Kies, D. Belhachemi, Marc Bocquet, et al.. Investigation of charge-trap memories with AlN based band engineered storage layers. Solid-State Electronics, Elsevier, 2011, 58 (1), pp.68 - 74. ⟨10.1016/j.sse.2010.11.030⟩. ⟨hal-01804675⟩
  • J.-P. Colonna, Marc Bocquet, Gabriel Molas, N. Rochat, P. Blaise, et al.. Study of parasitic trapping in alumina used as blocking oxide for nonvolatile memories. Journal of Vacuum Science and Technology B, American Institute of Physics, 2011, 29 (1), pp.159-165. 〈10.1116/1.3535552〉. 〈hal-01804670〉
  • Emmanuel Nowak, E. Vianello, L. Perniola, M. Bocquet, G. Molas, et al.. Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices. Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2010, 49, pp.04DD12. 〈hal-00596309〉
  • Marc Bocquet, G. Molas, L. Perniola, X. Garros, J. Buckley, et al.. Impact of a HTO/Al$_2$O$_3$ bi-layer blocking oxide in nitride-trap non-volatile memories. Solid-State Electronics, Elsevier, 2009, 53, pp.786 - 791. ⟨10.1016/j.sse.2009.03.018⟩. ⟨hal-01737746⟩
  • G. Molas, M. Bocquet, E. Vianello, L. Perniola, H. Grampeix, et al.. Reliability of charge trapping memories with high-k control dielectrics. Microelectronic Engineering, Elsevier, 2009, 86, pp.1796-1803. ⟨hal-00596125⟩
  • G. Molas, M. Bocquet, J. Buckley, H. Grampeix, M. Gély, et al.. Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories.. Microelectronic Engineering, Elsevier, 2008, 85, 2393-2399. ⟨hal-00391751⟩
  • G. Molas, Marc Bocquet, J. Buckley, H. Grampeix, M. Gely, et al.. Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories. Solid-State Electronics, Elsevier, 2007, 51 (11-12), pp.1540 - 1546. ⟨10.1016/j.sse.2007.09.020⟩. ⟨hal-01804685⟩

Conference papers37 documents

  • Marc Bocquet, T. Hirztlin, J.-O. Klein, E. Nowak, E. Vianello, et al.. In-Memory and Error-Immune Differential RRAM Implementation of Binarized Deep Neural Networks. 2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. IEEE, 2018 IEEE International Electron Devices Meeting (IEDM), pp.20.6.1-20.6.4, 〈10.1109/IEDM.2018.8614639〉. 〈hal-02011124〉
  • M. Kharbouche-Harrari, J. Postel-Pellerin, G. Di Pendina, R. Wacquez, D. Aboulkassimi, et al.. Impact of a Laser Pulse on a STT-MRAM Bitcell: Security and Reliability Issues. 2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS), Jul 2018, Platja d'Aro, Spain. 〈hal-01976697〉
  • Corentin Pigot, Fabien Gilibert, Marina Reyboz, Marc Bocquet, Paola Zuliani, et al.. Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching in Phase-Change Memory. 49th International Conference on Solid State Devices and Materals, Sep 2017, Tsukuba, Japan. 〈hal-01737914〉
  • A Krakovinsky, Marc Bocquet, R Wacquez, J. Coignus, J-M Portal. Thermal Laser Attack and High Temperature Heating on HfO2-based OxRAM Cells. International Symposium on On-Line Testing and Robust System Design, Jul 2017, Thessaloniki, Greece. 〈hal-01737925〉
  • Hassen Aziza, P. Canet, J. Postel-Pellerin, Mathieu Moreau, Jean-Michel Portal, et al.. ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology. 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. IEEE, 〈10.1109/ULIS.2017.7962594〉. 〈hal-01745666〉
  • A. Krakovinsky, M. Bocquet, R. Wacquez, J. Coignus, D. Deleruyelle, et al.. Impact of a Laser Pulse On HfO$_2$-based RRAM Cells Reliability and Integrity. 2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2016, Unknown, Unknown Region. pp.152-156, 2016, IEEE International Conference on Microelectronic Test Structures. 〈hal-01435097〉
  • Hassen Aziza, H. Ayari, S. Onkaraiah, M. Moreau, Jean-Michel Portal, et al.. Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation. 2016 11TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS), Apr 2016, Istanbul, Turkey. pp.1-5, 2016, 〈10.1109/DTIS.2016.7483892〉. 〈hal-01434981〉
  • G. Molas, G. Piccolboni, M. Barci, B. Traore, J. Guy, et al.. Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications. 2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2016, Unknown, Unknown Region. 2016, International Symposium on VLSI Technology Systems and Applications-Proceedings of the Technical Papers. 〈hal-01435224〉
  • El Agharben, M. Bileci, A. Roussy, Marc Bocquet. Flash gate optimized process and integration for electrical performances requirement on advanced embedded memory. 2016 International Symposium on Semiconductor Manufacturing (ISSM), Dec 2016, Tokyo, Japan. IEEE, Semiconductor Manufacturing (ISSM), 2016 International Symposium on. 〈10.1109/ISSM.2016.7934533〉. 〈hal-01737950〉
  • G. Piccolboni, G. Molas, M. Portal, R. Coquand, Marc Bocquet, et al.. Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications. 2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. IEEE, 2015 IEDM Technical Digest, pp.17.2.1-17.2.4, 〈10.1109/IEDM.2015.7409717〉. 〈hal-01804658〉
  • El Agharben, A. Roussy, Marc Bocquet, M. Bileci, S Bégouin, et al.. Critical sensitivity of flash gate dimension spread on electrical performances for advanced embedded memory. 2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), May 2015, Saratoga Springs, United States. IEEE, Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI. 〈10.1109/ASMC.2015.7164428〉. 〈hal-01737953〉
  • Fabien Clermidy, Natalija Jovanovic, Santhosh Onkaraiah, Houcine Oucheikh, Olivier Thomas, et al.. Resistive memories: Which applications?. Design Automation and Test in Europe, Mar 2014, Dresden, France. IEEE Conference Publications, 〈10.7873/DATE.2014.282〉. 〈hal-01804664〉
  • Charles Rebora, Marc Bocquet, T. Ouled-Khachroum, Magali Putero, Damien Deleruyelle. Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte. 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2014, Grenoble, France. IEEE, 〈10.1109/PRIME.2014.6872754〉. 〈hal-01804660〉
  • Hassen Aziza, Haytem Ayari, Santhosh Onkaraiah, Jean-Michel Portal, Mathieu Moreau, et al.. Oxide based resistive RAM: ON/OFF resistance analysis versus circuit variability. 2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), Oct 2014, Amsterdam, Netherlands. IEEE, 2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT). 〈10.1109/DFT.2014.6962107〉. 〈hal-01745718〉
  • T. Cabout, E. Vianello, E. Jalaguier, H. Grampeix, G. Molas, et al.. Effect of SET temperature on data retention performances of HfO2-based RRAM cells. 2014 IEEE 6th International Memory Workshop (IMW), May 2014, Taipei, France. IEEE, 2014 IEEE 6th International Memory Workshop (IMW), 〈10.1109/IMW.2014.6849355〉. 〈hal-01738447〉
  • A Amraoui, Marc Bocquet, F. Barros, J-M Portal, M. Charbonneau, et al.. Printed complementary organic thin film transistors based decoder for ferroelectric memory. ESSCIRC 2014 - 40th European Solid State Circuits Conference, Sep 2014, Venice Lido, France. IEEE, ESSCIRC 2014 - 40th European Solid State Circuits Conference, 〈10.1109/ESSCIRC.2014.6942034〉. 〈hal-01738468〉
  • K. Coulié, Marc Bocquet, Hassen Aziza, Jean-Michel Portal, Wenceslas Rahajandraibe, et al.. SPICE level analysis of Single Event Effects in an OxRRAM cell. 2013 14th Latin American Test Workshop - LATW, Apr 2013, Cordoba, France. IEEE, 〈10.1109/LATW.2013.6562684〉. 〈hal-01804661〉
  • Jean-Michel Portal, Mathieu Moreau, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, et al.. Analytical study of complementary memristive synchronous logic gates. 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, United States. IEEE, 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH). 〈10.1109/NanoArch.2013.6623047〉. 〈hal-01745759〉
  • Y Zhang, Erya Deng, Jacques-Olivier Klein, Damien Querlioz, DafinÉ Ravelosona, et al.. Synchronous Full-Adder based on Complementary Resistive Switching Memory Cells. 11th International New Circuits and Systems Conference (NEWCAS), Jun 2013, Paris, France. IEEE, 2013 IEEE 11th International New Circuits and Systems Conference (NEWCAS). 〈10.1109/NEWCAS.2013.6573578〉. 〈hal-01840795〉
  • T. Cabout, L. Perniola, V. Jousseaume, H. Grampeix, J.F. Nodin, et al.. Temperature impact (up to 200°C) on performance and reliability of HfO2-based RRAMs. 2013 5th IEEE International Memory Workshop (IMW), May 2013, Monterey, United States. IEEE, 2013 5th IEEE International Memory Workshop (IMW), 〈10.1109/IMW.2013.6582112〉. 〈hal-01738426〉
  • Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal. A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAMs. International Semiconductor Device Research Symposium, Dec 2013, Bethesda, United States. 〈hal-01745729〉
  • Hassen Aziza, Marc Bocquet, Mathieu Moreau, Jean-Michel Portal. Single-ended sense amplifier robustness evaluation for OxRRAM technology. 2013 IEEE Design and Test Symposium (IDT), Dec 2013, Marrakesh, Morocco. IEEE, 〈10.1109/IDT.2013.6727097〉. 〈hal-01745737〉
  • Weisheng Zhao, Y Zhang, Jacques-Olivier Klein, Damien Querlioz, Dafine Ravelosona, et al.. Crossbar architecture based on 2R complementary resistive switching memory cell. 2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ACM Press, NANOARCH '12 Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures 〈10.1145/2765491.2765508〉. 〈hal-01745351〉
  • T. Cabout, J. Buckley, C. Cagli, V. Jousseaume, J.-F. Nodin, et al.. Role of Ti and Pt electrodes on resistance switching variability of HfO$_2$-based Resistive Random Access Memory. EMRS 2012 symposium L: Novel functional materials and nanostructures for innovative non-volatile memory devices, May 2012, Strasbourg, France. Thin Solid Films. Vol. 533 (2013), 533, pp.19 - 23, 2013, 〈10.1016/j.tsf.2012.11.050〉. 〈hal-01762335〉
  • Santhosh Onkaraiah, Marina Reyboz, Fabien Clermidy, Jean-Michel Portal, Marc Bocquet, et al.. Bipolar ReRAM Based Non-­‐Volatile Flip-­‐flops for Low-­‐Power Architectures. 2012 IEEE 10th International New Circuits and Systems Conference (NEWCAS), Jun 2012, Montreal, Canada. IEEE, New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International. 〈10.1109/NEWCAS.2012.6329045〉. 〈hal-01745498〉
  • Thomas Cabout, Julien Buckley, Carlo Cagli, Vincent Jousseaume, Jean-François Nodin, et al.. Resistance switching variability in HfO2-based memory structures with different electrodes. EMRS Spring Meeting 2012, May 2012, Strasbourg France. 〈hal-01738395〉
  • Chistophe Muller, D. Deleruyelle, O. Ginez, J-M Portal, Marc Bocquet. Design challenges for prototypical and emerging memory concepts relying on resistance switching. 2011 IEEE Custom Integrated Circuits Conference (CICC 2011), Sep 2011, San Jose, CA, United States. IEEE, 2011 IEEE Custom Integrated Circuits Conference (CICC), 2011, 〈10.1109/CICC.2011.6055316〉. 〈hal-01745644〉
  • S Tirano, Marc Bocquet, Ch Muller, D. Deleruyelle, L. Perniola, et al.. On the electrical variability of resistive-switching memory devices based on NiO oxide. 2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC), Dec 2011, Arlington, United States. 〈hal-01745633〉
  • G. Molas, L. Masoero, P. Blaise, A. Padovani, J. P. Colonna, et al.. Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling. IEEE IEDM 2010,, 2010, San Francisco, CA, Spain. IEEE IEDM 2010,, 2010. 〈hal-00604550〉
  • G. Molas, Marc Bocquet, J. Colonna, V. Vidal, R. Kies, et al.. Layered HfSiON-based tunnel stacks for voltage reduction and improved reliability in TANOS memories. Proceedings of 2010 International Symposium on VLSI Technology, System and Application, Apr 2010, Hsin Chu, France. IEEE, 〈10.1109/VTSA.2010.5488949〉. 〈hal-01745640〉
  • Emmanuel Nowak, E. Vianello, L. Perniola, M. Bocquet, G. Molas, et al.. Charge Localization During Program and Retention in NROM-like Nonvolatile Memory Devices.. International Conference on Solid State Devices and Materials (SSDM), 2009, Sendai, Japan. 2009. 〈hal-00604215〉
  • M. Bocquet, G. Molas, L. Perniola, X. Garros, J. Buckley, et al.. On the Role of a HTO/Al2O3 Bi-Layer Blocking Oxide in Nitride-Trap Non-Volatile Memories. 38th European Solid-State Device Research Conference (ESSDERC'08), Edinburgh, UK, Sep 2008, France. 2008. 〈hal-00392558〉
  • G. Molas, M. Bocquet, H. Grampeix, J.P. Colonna, L. Masarotto, et al.. Reliability of charge trapping memories with high-k control dielectrics. 5th International Symposium on Advanced Gate Stack Technology, Austin, Texas, Sep 2008, France. 〈hal-00392559〉
  • Emmanuel Nowak, M. Bocquet, L. Perniola, G. Ghibaudo, G. Molas, et al.. New Physical Model for ultra-scaled 3D Nitride-Trapping Non-Volatile Memories.. IEEE International Electron Devices Meeting 2008, San Francisco, USA, Dec 2008, France. 2008. 〈hal-00392162〉
  • G. Molas, Marc Bocquet, J. Buckley, J. Colonna, L. Masarotto, et al.. Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications. 2007 IEEE International Electron Devices Meeting - IEDM '07, Dec 2007, Washington, France. IEEE, pp.453-456, 2007 IEEE International Electron Devices Meeting. 〈10.1109/IEDM.2007.4418971〉. 〈hal-02072903〉
  • Marc Bocquet, G. Molas, H. Grampeix, J. Buckley, F. Martin, et al.. Intrinsic fixed charge and trapping properties of HfAlO interpoly dielectric layers. International Conference on Memory Technology and Design (ICMTD), May 2007, Giens, France. 〈hal-01745578〉
  • J. Buckley, M. Bocquet, G. Molas, M. Gely, P. Brianceau, et al.. In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap. NVMsIEDM 2006, 2006, San Francisco, United States. XX, In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap, pp.XX, 2006. 〈hal-00147137〉

Poster communications1 document

  • Marc Bocquet, G. Molas, E. Martínez, H. Grampeix, F. Martin, et al.. NH 3 treatments of Hf-based layers for application as NVM active dielectrics. IEEE Semiconductor Interface Specialists Conference (SISC), Dec 2007, Arlington, United States. 〈hal-01745607〉

Theses1 document

  • Marc Bocquet. Intégration de matériaux à forte permittivité électrique (High-k) dans les mémoires non-volatiles pour les générations sub-45nm. Micro et nanotechnologies/Microélectronique. Institut National Polytechnique de Grenoble (INPG), 2009. Français. 〈tel-01737690〉

Habilitation à diriger des recherches1 document

  • Marc Bocquet. Caractérisation et modélisation compacte de mémoires émergentes. Micro et nanotechnologies/Microélectronique. Aix Marseille Université, 2017. 〈tel-01737675〉