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Bertrand Vilquin
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Documents
Présentation
Reader (HDR) in condensed matters
Bertrand Vilquin (reader, HDR, Ecole Centrale de Lyon) has been working on integration of perovskite materials since the beginning of his PhD in 1999 at Université de Caen (France). In 2002, he joined the Institute for Scientific and Industrial Research at Osaka University (Japan) for a JSPS post doctorate fellowship. In 2005, he moved to Université Paris XI to work on an industrial project with ALTIS Semiconductors to realize New Generation of nanoscale MRAM devices. In 2006, he became lecturer at Ecole Centrale de Lyon working on the integration of perovskite materials on silicon though academic and industrial projects. He has a rich experience in both national and international research projects and had been the coordinator of 2 ANR projects. He was invited professor at Osaka University (Japan) in 2012 and at the University of Tokyo (Japan) in 2016. He became associate professor at Université de Sherbrooke (Canada) in 2016. He is the coordinator of the “nanoscale engineering” master course of University of Lyon. He successfully obtained his habilitation to conduct research (HDR) in 2018 and he is member of IEEE and SFP.
**Project leader:**
\- ANR MINOS (2007-2011)
\- ANR SURFFER (2010-2013)
**WorkPackage coordinator:**
\- ANR PIEZO2POWER (2011-2015)
\- ANR INTENSE (2015-2017)
\- H2020 ICT 3eFERRO (2018-2021)
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Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric CapacitorsAdvanced Electronic Materials, 2023, pp.2300171. ⟨10.1002/aelm.202300171⟩
Article dans une revue
hal-04186567v1
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Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layerphysica status solidi (RRL) - Rapid Research Letters, 2022, 2100583, pp.2100583. ⟨10.1002/pssr.202100583⟩
Article dans une revue
hal-03759538v1
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Insertion of an Ultra‐thin Interfacial Aluminium Layer for the Realisation of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction.physica status solidi (RRL) - Rapid Research Letters, 2022, 16 (10), pp.2100585. ⟨10.1002/pssr.202100585⟩
Article dans une revue
hal-03609773v1
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Influence of Interfaces on the Enhanced Ferroelectricity of Ultra-Thin HZO-Based Tunnel JunctionsISAF-ISIF-PFM 2023 SYMPOSIUM, IEEE; UFFC, Jul 2023, Cleveland, United States
Communication dans un congrès
hal-04195857v1
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Elaboration and imprint consideration in HfZrO2 ferroelectric capacitorsHigh k Workshop 2023, NamLab, May 2023, Dresden, Germany
Communication dans un congrès
hal-04136940v1
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Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel
Communication dans un congrès
hal-04055083v1
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Study of Imprint dynamics in CMOS compatible HZO ferroelectric capacitorsEMRS 2023 Fall Meeting, European Materials Research Society (E-MRS), Sep 2023, Warsaw, Poland
Communication dans un congrès
hal-04213060v1
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Fabrication of HfZrO2 ferroelectric capacitors and study of wake-up & imprint dynamicsFerroelectrics Workshop 2023 - Domains and Domain Walls, NTNU Nano, Apr 2023, Tronso-Trondheim, Norway
Communication dans un congrès
hal-04083650v1
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Interfaces engineering to enhance ferroelectricity in ultra-thin HZO CMOS compatible FTJEMRS 2023 Fall Meeting, European Materials Research Society, Sep 2023, Warsaw (Poland), Poland
Communication dans un congrès
hal-04216334v1
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Wake-Up Effect and Retention Evolutions of Hf0.5Zr0.5O2 Capacitor by Nanostructuration EngineeringISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès
hal-03715010v1
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How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical propertiesEMRS 2022 Spring Meeting - Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films VIII and 6th E-MRS & MRS-J bilateral symposium, European Materials Research Society, May 2022, Strasbourg, France
Communication dans un congrès
hal-03682220v1
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Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced propertiesEMRS 2022 Spring Meeting - Symposium E : Adaptive materials and devices for brain-inspired electronics, European Materials Research Society, May 2022, Strasbourg, France
Communication dans un congrès
hal-03690321v1
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Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced FerroelectricityISAF-PFM-ECAPD 2022, Jun 2022, Tours, France
Communication dans un congrès
hal-03715029v1
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Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctionsEMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Communication dans un congrès
hal-03368741v1
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Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applicationsJournées de la matière condensée (JMC17), Société française de physique (SFP), Aug 2021, Rennes, France
Communication dans un congrès
hal-03372588v1
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Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic ApplicationEMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Communication dans un congrès
hal-03354311v1
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