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Bertrand Vilquin
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Documents
Présentation
Reader (HDR) in condensed matters
Bertrand Vilquin (reader, HDR, Ecole Centrale de Lyon) has been working on integration of perovskite materials since the beginning of his PhD in 1999 at Université de Caen (France). In 2002, he joined the Institute for Scientific and Industrial Research at Osaka University (Japan) for a JSPS post doctorate fellowship. In 2005, he moved to Université Paris XI to work on an industrial project with ALTIS Semiconductors to realize New Generation of nanoscale MRAM devices. In 2006, he became lecturer at Ecole Centrale de Lyon working on the integration of perovskite materials on silicon though academic and industrial projects. He has a rich experience in both national and international research projects and had been the coordinator of 2 ANR projects. He was invited professor at Osaka University (Japan) in 2012 and at the University of Tokyo (Japan) in 2016. He became associate professor at Université de Sherbrooke (Canada) in 2016. He is the coordinator of the “nanoscale engineering” master course of University of Lyon. He successfully obtained his habilitation to conduct research (HDR) in 2018 and he is member of IEEE and SFP.
**Project leader:**
\- ANR MINOS (2007-2011)
\- ANR SURFFER (2010-2013)
**WorkPackage coordinator:**
\- ANR PIEZO2POWER (2011-2015)
\- ANR INTENSE (2015-2017)
\- H2020 ICT 3eFERRO (2018-2021)
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Chemical reactivity between sol–gel deposited Pb(Zr,Ti)O3 layers and their GaAs substratesCrystEngComm, 2016, 18, pp.7494
Article dans une revue
hal-01489114v1
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X-ray photoelectron spectroscopy and diffraction investigation of a metal–oxide-semiconductor heterostructure: Pt/Gd2O3/Si(111)Journal of Crystal Growth, 2015, 416, pp.118 - 125. ⟨10.1016/j.jcrysgro.2015.02.001⟩
Article dans une revue
hal-01848746v1
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Evidence for the formation of two phases during the growth of SrTiO3 on siliconPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.054105. ⟨10.1103/PhysRevB.83.054105⟩
Article dans une revue
hal-00601296v1
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Epitaxial growth of germanium on silicon using a Gd2O3/Si (111) crystalline templateJournal of Vacuum Science & Technology A, 2010, 28 (5), pp.1187-1190. ⟨10.1116/1.3478301⟩
Article dans une revue
hal-01939983v1
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Epitaxial growth of high-κ oxides on siliconThin Solid Films, 2008, 517 (1), pp.197-200
Article dans une revue
hal-01939925v1
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Vers l'intégration monolithique d'hétérostructures et de nanostructures III-V et Ge sur silicium pour la microélectronique et l'optoélectroniqueLeray J.L., Boudenot J.C., Gautier J. La micro-nano électronique, enjeux et mutations, CNRS ÉDITIONS, pp.179-182, 2009
Chapitre d'ouvrage
hal-00575787v1
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