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Bertrand Vilquin
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Documents
Présentation
Reader (HDR) in condensed matters
Bertrand Vilquin (reader, HDR, Ecole Centrale de Lyon) has been working on integration of perovskite materials since the beginning of his PhD in 1999 at Université de Caen (France). In 2002, he joined the Institute for Scientific and Industrial Research at Osaka University (Japan) for a JSPS post doctorate fellowship. In 2005, he moved to Université Paris XI to work on an industrial project with ALTIS Semiconductors to realize New Generation of nanoscale MRAM devices. In 2006, he became lecturer at Ecole Centrale de Lyon working on the integration of perovskite materials on silicon though academic and industrial projects. He has a rich experience in both national and international research projects and had been the coordinator of 2 ANR projects. He was invited professor at Osaka University (Japan) in 2012 and at the University of Tokyo (Japan) in 2016. He became associate professor at Université de Sherbrooke (Canada) in 2016. He is the coordinator of the “nanoscale engineering” master course of University of Lyon. He successfully obtained his habilitation to conduct research (HDR) in 2018 and he is member of IEEE and SFP.
**Project leader:**
\- ANR MINOS (2007-2011)
\- ANR SURFFER (2010-2013)
**WorkPackage coordinator:**
\- ANR PIEZO2POWER (2011-2015)
\- ANR INTENSE (2015-2017)
\- H2020 ICT 3eFERRO (2018-2021)
Publications
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Insertion of an Ultra‐thin Interfacial Aluminium Layer for the Realisation of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction.physica status solidi (RRL) - Rapid Research Letters, 2022, 16 (10), pp.2100585. ⟨10.1002/pssr.202100585⟩
Article dans une revue
hal-03609773v1
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Study of Imprint dynamics in CMOS compatible HZO ferroelectric capacitorsEMRS 2023 Fall Meeting, European Materials Research Society (E-MRS), Sep 2023, Warsaw, Poland
Communication dans un congrès
hal-04213060v1
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Study of Imprint Dynamics in HZO Ferroelectric CapacitorsInternational Symposium on Applications of Ferroelectrics 2023, IEEE; UFFC, Jul 2023, Cleveland, United States
Communication dans un congrès
hal-04190736v1
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Study of Polarisation and Conduction Mechanisms in Ferroelectric Hf0.5Zr0.5O2 Down to Deep Cryogenic Temperature 4.2 KISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès
hal-03719069v1
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Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic ApplicationEMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Communication dans un congrès
hal-03354311v1
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