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In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration PerspectivesIEEE Electron Device Letters, 2008, 29 (5), pp.494-496. ⟨10.1109/LED.2008.919781⟩
Article dans une revue
cea-00320837v1
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Characterization of IN-IC integrable in-plane nanometer scale resonators fabricated by a silicon on nothing advanced CMOS technology21st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2008, Jan 2008, Tucson - AZ, United States. pp.1016-1019, ⟨10.1109/MEMSYS.2008.4443831⟩
Communication dans un congrès
cea-00320830v1
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