Benoit JOUAULT

Sergey Krishtopenko, Sandra Ruffenach, F. Gonzalez-Posada, G. Boissier, M. Marcinkiewicz, et al.. Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well. Physical Review B : Condensed matter and materials physics, American Physical Society, 2018, 97 (24), pp.245419. 〈10.1103/PhysRevB.97.245419〉. 〈hal-01862289〉

Abir Nachawaty, M. Yang, Sébastien Nanot, D. Kazazis, R. Yakimova, et al.. Large nonlocality in macroscopic Hall bars made of epitaxial graphene. Physical Review B : Condensed matter and materials physics, American Physical Society, 2018, 98, pp.045403. 〈10.1103/PhysRevB.98.045403〉. 〈hal-01833590〉

Aleksandr Kadykov, Sergey Krishtopenko, Benoit Jouault, Wilfried Desrat, Wojciech Knap, et al.. Temperature-Induced Topological Phase Transition in HgTe Quantum Wells. Physical Review Letters, American Physical Society, 2018, 120 (8), pp.086401. 〈10.1103/PhysRevLett.120.086401〉. 〈hal-01740166〉

D. Massarotti, Benoit Jouault, V. Rouco, G. Campagnano, D. Giuliano, et al.. Hysteretic Critical State in Coplanar Josephson Junction with Monolayer Graphene Barrier. Journal of Superconductivity and Novel Magnetism, Springer Verlag, 2017, 30 (1), pp.5-14. 〈10.1007/s10948-016-3871-x〉. 〈hal-01588920〉

Abir Nachawaty, M. Yang, Wilfried Desrat, Sébastien Nanot, B. Jabakhanji, et al.. Magnetic field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point. Physical Review B : Condensed matter and materials physics, American Physical Society, 2017, 96, pp.075442. 〈10.1103/PhysRevB.96.075442〉. 〈hal-01584484〉

Ran Finkelstein, Kobi Cohen, Benoit Jouault, Ken West, Loren N. Pfeiffer, et al.. Transition from spin-orbit to hyperfine interaction dominated spin relaxation in a cold fluid of dipolar excitons. Physical Review B : Condensed matter and materials physics, American Physical Society, 2017, 96 (8), pp.085404. 〈10.1103/PhysRevB.96.085404〉. 〈hal-01577957v2〉

Perine Landois, Tianlin Wang, Abir Nachawaty, Maxime Bayle, J.M. Decams, et al.. Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure. Physical Chemistry Chemical Physics, Royal Society of Chemistry, 2017, 10.1039/c7cp01012e. 〈10.1039/c7cp01012e〉. 〈hal-01540335〉

D. Massarotti, D. Stornaiuolo, P. Lucignano, R. Caruso, L. Galletti, et al.. What happens in Josephson junctions at high critical current densities. Low Temperature Physics, American Institute of Physics, 2017, 43 (7), pp.816 - 823. 〈10.1063/1.4995630〉. 〈hal-01643146〉

R. Dagher, S. Matta, Romain Parret, Matthieu Paillet, Benoit Jouault, et al.. High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates. physica status solidi (a), Wiley, 2017, 214 (4), pp.1600436. 〈10.1002/pssa.201600436〉. 〈hal-01563258〉

D. Massarotti, Benoit Jouault, V. Rouco, S. Charpentier, T. Bauch, et al.. Incipient Berezinskii-Kosterlitz-Thouless transition in two-dimensional coplanar Josephson junctions. Physical Review B : Condensed matter and materials physics, American Physical Society, 2016, 94 (5), pp.054525. 〈10.1103/PhysRevB.94.054525〉. 〈hal-01426431〉

M. Kotur, R. I. Dzhioev, Maria Vladimirova, Benoit Jouault, V. L. Korenev, et al.. Nuclear spin warm up in bulk n-GaAs. Physical Review B : Condensed matter and materials physics, American Physical Society, 2016, 94 (8), pp.081201. 〈10.1103/PhysRevB.94.081201〉. 〈hal-01393714〉

Fedor Fedichkin, Thierry Guillet, Pierre Valvin, Benoit Jouault, Christelle Brimont, et al.. Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells. Physical Review Applied, American Physical Society, 2016, 6 (1), pp.014011. 〈10.1103/PhysRevApplied.6.014011〉. 〈hal-01353893v2〉

D. Stornaiuolo, C. Cantoni, G. M. De Luca, R. Di Capua, E. Di Gennaro, et al.. Tunable spin polarization and superconductivity in engineered oxide interfaces. Nature Materials, Nature Publishing Group, 2016, 15 (3), pp.278-+. 〈10.1038/NMAT4491〉. 〈hal-01296509〉

R. Ribeiro-Palau, F. Lafont, J. Brun-Picard, D. Kazazis, A. Michon, et al.. Quantum Hall resistance standard in graphene devices under relaxed experimental conditions. Nature Nanotechnology, Nature Publishing Group, 2015, 10 (11), pp.965 - 971. 〈10.1038/nnano.2015.192〉. 〈hal-01615243〉

Nicolas Camara, Benoit Jouault, A. Caboni, Antoine Tiberj, P. Godignon, et al.. Epitaxial Graphene Growth on alpha-SiC: Probing the Effect of Surface Orientation. Nanoscience and Nanotechnology Letters, 2011, 3, pp.49-54. 〈10.1166/nnl.2011.1118〉. 〈hal-00666151〉

B. Jouault, L. Bouguen, S. Contreras, A. Kerlain, Vincent Mosser. Finite element modeling for temperature stabilization of gated Hall sensors. Journal of Applied Physics, American Institute of Physics, 2008, 104 (5), pp.053705. 〈10.1063/1.2968436〉. 〈hal-00388502〉

M. Zdrojek, T. Melin, C. Boyaval, D. Stievenard, B. Jouault, et al.. Charging and emission effects of multiwalled carbon nanotubes probed by electric force microscopy. Applied Physics Letters, American Institute of Physics, 2005, 86, pp.213114-1-3. 〈hal-00126235〉

F. Haddad, F. Sebille, M. Farine, V. De La Mota, P. Schuck, et al.. Effects of Gogny-type interactions on the nuclear flow. Physical Review C, American Physical Society, 1995, 52, pp.2013-2020. 〈10.1103/PhysRevC.52.2013〉. 〈in2p3-00001683〉

Abir Nachawaty, Ming Yang, Sébastien Nanot, Alessandro Cresti, Walter Escoffier, et al.. Robustness of the quantum Hall effect of graphene on Silicon Carbide. 3rd International Conference on Physics of 2D Crystals (ICP2C3), May 2018, La Valletta, Malta. 〈https://www.mifp.eu/SCHOOLS/ICP2C3-2018/〉. 〈hal-01966664〉

Tianlin Wang, Perine Landois, Jean-Roch Huntzinger, Ahmed Azmi Zahab, Alessandro De Cecco, et al.. Epitaxial graphene growth at low argon pressure and characterization of buffer layer on SiC(0001). GDR-I Graphene and co Annual meeting 2018, Oct 2018, Sète, France. 〈hal-01923963〉

Aleksandr Kadykov, Sergey Krishtopenko, Benoit Jouault, Wilfried Desrat, M. Marcinkiewicz, et al.. Spectroscopy of temperature-driven single valley Dirac fermions in HgTe/CdHgTe quantum wells. 2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2018, Nagoya, Japan. IEEE, International Conference on Infrared Millimeter and Terahertz Waves, 2018, 〈10.1109/IRMMW-THz.2018.8510039〉. 〈hal-01935712〉

Pierre Lefebvre, Benoit Jouault, Thierry Guillet, Christelle Brimont, Pierre Valvin, et al.. Indirect Excitons in Group III-Nitride-Based Quantum Wells.. CIMTEC 2018 - 14th Intl Conference on Modern Materials and Technologies - 8th Forum on New Materials, Jun 2018, Pérouse, Italy. 2018. 〈hal-01908795〉

Maria Vladimirova, Thierry Guillet, Christelle Brimont, Denis Scalbert, Benoit Jouault, et al.. On the nature of light emission in polar GaN/(AlGa)N quantum wells. International Conference on Hybrid Photonics and Materials, Sep 2017, Miconos, Greece. 〈hal-01932705〉

Maria Vladimirova, Thierry Guillet, Christelle Brimont, Pierre Lefebvre, Thierry Bretagnon, et al.. Indirect excitons in polar GaN/(AlGa)N quantum wells. International school/colloquium in honor of E. Gross, Oct 2017, St-Petersbourg, Russia. 〈hal-01932812〉

Tianlin Wang, Perine Landois, Maxime Bayle, Jean-Roch Huntzinger, Alessandro De Cecco, et al.. Epitaxial growth of low doped monolayer graphene on 4H-SIC (0001) at low argon pressure. GDR-I Graphene and co Annual meeting 2017, Oct 2017, Aussois, France. 2017. 〈hal-01924058〉

F. Tafuri, A. Tagliacozzo, D. Born, D. Stornaiuolo, E. Gambale, et al.. Coherent quasiparticle transport in grain boundary junctions employing high-Tc superconductors. ENS 2006, Dec 2006, Paris, France. TIMA Editions, pp.140-144, 2006. 〈hal-00166779〉

Abir Nachawaty, Sébastien Nanot, Alessandro Cresti, Walter Escoffier, Benoit Jouault. Electronic properties of epitaxial graphene close to the charge neutrality point. Annual meeting of the GDRi Graphene & Co, Oct 2018, Sète, France. 〈http://www.graphene-and-co.org〉. 〈hal-01966485〉

Tianlin Wang, Perine Landois, Maxime Bayle, Jean-Roch Huntzinger, Alessandro De Cecco, et al.. Growth of epitaxial graphene on SiC (0001) at low argon pressure and its characterization. ICPS, Jul 2018, Montpellier, France. 〈hal-01924077〉

Tianlin Wang, Perine Landois, Maxime Bayle, Abir Nachawaty, Wilfried Desrat, et al.. Growth of p-type monolayer graphene on SiC (0001) via sublimation at low argon pressure. GDR, Oct 2016, Oleron, France. 〈hal-01455032〉

Ming Yang, Olivier Couturaud, Wilfried Desrat, D. Kazazis, A. Michon, et al.. High field magneto-transport in Graphene Grown by Chemical Vapor Deposition on SiC. Annual meeting of the GDRi Graphene and Nanotubes, Nov 2015, Aussois, France. 〈hal-01966744〉