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GaN/AlN bilayers for integrated photonics

 Nagesh Bhat , Maksym Gromovyi , Moustafa El Kurdi , Xavier Checoury , Benjamin Damilano , et al.
Optical Materials Express, 2024, 14 (3), pp.792. ⟨10.1364/ome.515887⟩
Article dans une revue hal-04484997v1
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Bandwidth-unlimited polarization-maintaining metasurfaces

 Q Song , S Khadir , S Vézian , B Damilano , P D Mierry , et al.
Science Advances , 2021
Article dans une revue hal-03436097v1
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Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

 Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Benjamin Damilano , et al.
Semiconductor Science and Technology, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩
Article dans une revue hal-03035072v1
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Ge doped GaN and Al 0.5 Ga 0.5 N-based tunnel junctions on top of visible and UV light emitting diodes

 V. Fan Arcara , B. Damilano , G. Feuillet , S. Vezian , K. Ayadi , et al.
Journal of Applied Physics, 2019, 126 (22), pp.224503. ⟨10.1063/1.5121379⟩
Article dans une revue hal-02569339v1

Growth of GaN Nanostructures with Polar and Semipolar Orientations for the Fabrication of UV LEDs

 Julien Brault , B. Damilano , Daniel Rosales , Thierry Bretagnon , Bernard Gil
SPIE GALLIUM NITRIDE MATERIALS AND DEVICES IX, Feb 2014, san francisco, United States. pp.89860Z, ⟨10.1117/12.2036924⟩
Communication dans un congrès hal-01021435v1

Electrical control of excitons in GaN/(Al,Ga)N quantum wells

 R. Aristegui , F. Chiaruttini , Benoît Jouault , Pierre Lefebvre , Christelle Brimont , et al.
2022
Pré-publication, Document de travail hal-03621796v1

Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.

 Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio , Thierry Guillet , Bernard Gil , et al.
Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland
Poster de conférence hal-01312253v1
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Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process

 Leszek Konczewicz , Sandrine Juillaguet , Marcin Zajac , Elzbieta Litwin-Staszewska , Mohamed Al Khalfioui , et al.
physica status solidi (a), 2023, Nitride Semiconductors, 220 (16), pp.2200769. ⟨10.1002/pssa.202200769⟩
Article dans une revue hal-04248758v1

Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures

 Maria Vladimirova , François Chiaruttini , Thierry Guillet , Christelle Brimont , Pierre Lefebvre , et al.
5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia
Communication dans un congrès hal-02466887v1

Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots

 S. Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Sandrine Juillaguet , T. Taliercio , et al.
5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩
Communication dans un congrès istex hal-00543738v1

Nitride-on-silicon platform for UV-visible photonics with integrated microlaser sources.

 Julien Sellés , Thierry Guillet , V. Crepel , B. Gayral , B. Damilano , et al.
META’17, the 8th International Conference on Metamaterials, Photonic Crystals and Plasmonics, Jul 2017, Incheon - Seoul, South Korea
Communication dans un congrès hal-01952364v1
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Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces

 Qinghua Song , Arthur Baroni , Pin Chieh Wu , Sébastien Chenot , Virginie Brandli , et al.
Nature Communications, 2021, 12, pp.3631. ⟨10.1038/s41467-021-23908-0⟩
Article dans une revue hal-03111022v2

High Temperature Annealing of MBE-grown Mg-doped GaN

 Sylvie Contreras , Leszek Konczewicz , Herve Peyre , Sandrine Juillaguet , M. Al Khalfioui , et al.
33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, Peking, China. pp.UNSP 012018, ⟨10.1088/1742-6596/864/1/012018⟩
Communication dans un congrès hal-01935176v1

On the nature of light emission in polar GaN/(AlGa)N quantum wells

 Maria Vladimirova , Thierry Guillet , Christelle Brimont , Denis Scalbert , Benoit Jouault , et al.
International Conference on Hybrid Photonics and Materials, Sep 2017, Miconos, Greece
Communication dans un congrès hal-01932705v1

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

 Thi Huong Ngo , Bernard Gil , Pierre Valvin , B. Damilano , Kaddour Lekhal , et al.
Applied Physics Letters, 2015, 107, pp.122103. ⟨10.1063/1.4931624⟩
Article dans une revue hal-01203313v1

Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation.

 Thierry Bretagnon , Sokratis Kalliakos , Pierre Lefebvre , Pierre Valvin , Bernard Gil , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (20), pp.205301. ⟨10.1103/PhysRevB.68.205301⟩
Article dans une revue hal-01303926v1
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Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

 Julien Brault , Samuel Matta , Thi Huong Ngo , Mohamed Al Khalfioui , Pierre Valvin , et al.
Journal of Applied Physics, 2019, 126 (20), pp.205701. ⟨10.1063/1.5115593⟩
Article dans une revue hal-02380035v1

Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission

 Samuel Matta , Julien Brault , Thi Huong Ngo , B. Damilano , Maxim Korytov , et al.
Journal of Applied Physics, 2017, 122, pp.085706. ⟨10.1063/1.5000238⟩
Article dans une revue hal-01579358v1
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Lasing up to 380 K in a sublimated GaN nanowire

 S. Sergent , B. Damilano , S. Vézian , S. Chenot , T. Tsuchizawa , et al.
Applied Physics Letters, 2020, 116 (22), pp.223101. ⟨10.1063/5.0004771⟩
Article dans une revue hal-03024869v1

Nitride-on-Silicon microdisk lasers covering the blue to UV-C spectral range

 Julien Sellés , V. Crepel , Christelle Brimont , Bruno Gayral , Meletios Mexis , et al.
International Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, United States
Communication dans un congrès hal-01951054v1

Comparison of UV-C and blue emitting
nitride-on-silicon microdisk lasers

 Julien Sellés , Thierry Guillet , V. Crepel , B. Gayral , B. Damilano , et al.
34th International Conference on the Physics of Semiconductors (ICPS), Jul 2018, Montpellier, France
Poster de conférence hal-01952385v1
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III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

 Julien Selles , V. Crepel , I. Roland , M. El Kurdi , X. Checoury , et al.
Applied Physics Letters, 2016, 109 (23), pp.231101. ⟨10.1063/1.4971357⟩
Article dans une revue hal-01469387v1
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Influence of surface roughness on the lasing characteristics of optically pumped thin-film GaN microdisks

 Hui Zi , Yuk Fai Cheung , Benjamin Damilano , Eric Frayssinet , Blandine Alloing , et al.
Optics Letters, 2022, 47 (6), pp.1521-1524. ⟨10.1364/ol.449482⟩
Article dans une revue hal-04285358v1
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Porous Nitride Light-Emitting Diodes

 Nuño Amador-Mendez , Tiphaine Mathieu-Pennober , Stéphane Vézian , Marie-Pierre Chauvat , Magali Morales , et al.
ACS photonics, 2022, 9 (4), pp.1256-1263. ⟨10.1021/acsphotonics.1c01729⟩
Article dans une revue hal-03864353v1
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Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires

 Kelly W Mauser , Magdalena Solà-Garcia , Matthias Liebtrau , Benjamin Damilano , Pierre-Marie Coulon , et al.
ACS Nano, 2021, 15 (7), pp.11385-11395. ⟨10.1021/acsnano.1c00850⟩
Article dans une revue hal-03418883v1
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Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

 B. Damilano , Stephane Vezian , M.P. Chauvat , Pierre Ruterana , Nuño Amador-Méndez , et al.
Journal of Applied Physics, 2022, 132 (3), pp.035302. ⟨10.1063/5.0089892⟩
Article dans une revue hal-03865257v1
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Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films

 R. Aristegui , P. Lefebvre , C. Brimont , T. Guillet , M. Vladimirova , et al.
Physical Review B, 2023, 108 (12), pp.125421. ⟨10.1103/PhysRevB.108.125421⟩
Article dans une revue hal-04251300v1

Nuclear microprobe analysis of GaN based light emitting diodes

 Lionel Hirsch , Albert-Serge Barriere , P. Moretto , B. Damilano , N. Grandjean , et al.
physica status solidi (a), 2001, 188, pp.1
Article dans une revue hal-00183545v1

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

 K. Lekhal , B. Damilano , H. T. Ngo , Daniel Rosales , P. de Mierry , et al.
Applied Physics Letters, 2015, 106 (14), pp.142101. ⟨10.1063/1.4917222⟩
Article dans une revue hal-01238729v1

Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

 Julien Brault , Daniel Rosales , B. Damilano , Mathieu Leroux , A Courville , et al.
Semiconductor Science and Technology, 2014, 29, pp.084001. ⟨10.1088/0268-1242/29/8/084001⟩
Article dans une revue hal-01025116v1
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