Bandwidth-unlimited polarization-maintaining metasurfaces
Q Song
,
S Khadir
,
S Vézian
,
B Damilano
,
P D Mierry
,
et al.
Science Advances , 2021
Article dans une revue
hal-03436097v1
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Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors
Thi Huong Ngo
,
Rémi Comyn
,
Sébastien Chenot
,
Julien Brault
,
Benjamin Damilano
,
et al.
Article dans une revue
hal-03035072v1
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GaN/AlN bilayers for integrated photonics
Nagesh Bhat
,
Maksym Gromovyi
,
Moustafa El Kurdi
,
Xavier Checoury
,
Benjamin Damilano
,
et al.
Article dans une revue
hal-04484997v1
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Growth of GaN Nanostructures with Polar and Semipolar Orientations for the Fabrication of UV LEDs
Julien Brault
,
B. Damilano
,
Daniel Rosales
,
Thierry Bretagnon
,
Bernard Gil
SPIE GALLIUM NITRIDE MATERIALS AND DEVICES IX , Feb 2014, san francisco, United States. pp.89860Z,
⟨10.1117/12.2036924⟩
Communication dans un congrès
hal-01021435v1
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Electrical control of excitons in GaN/(Al,Ga)N quantum wells
R. Aristegui
,
F. Chiaruttini
,
Benoît Jouault
,
Pierre Lefebvre
,
Christelle Brimont
,
et al.
2022
Pré-publication, Document de travail
hal-03621796v1
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Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.
Pierre Lefebvre
,
Thierry Bretagnon
,
Thierry Taliercio
,
Thierry Guillet
,
Bernard Gil
,
et al.
Summer School "Semiconductor Quantum Dots: Physics and Devices". , Sep 2004, Ascona, Switzerland
Poster de conférence
hal-01312253v1
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Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process
Leszek Konczewicz
,
Sandrine Juillaguet
,
Marcin Zajac
,
Elzbieta Litwin-Staszewska
,
Mohamed Al Khalfioui
,
et al.
Article dans une revue
hal-04248758v1
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Nitride-on-silicon platform for UV-visible photonics with integrated microlaser sources.
Julien Sellés
,
Thierry Guillet
,
V. Crepel
,
B. Gayral
,
B. Damilano
,
et al.
META’17, the 8th International Conference on Metamaterials, Photonic Crystals and Plasmonics , Jul 2017, Incheon - Seoul, South Korea
Communication dans un congrès
hal-01952364v1
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Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures
Maria Vladimirova
,
François Chiaruttini
,
Thierry Guillet
,
Christelle Brimont
,
Pierre Lefebvre
,
et al.
5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES , Jul 2019, Moscou, Russia
Communication dans un congrès
hal-02466887v1
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Ge doped GaN and Al 0.5 Ga 0.5 N-based tunnel junctions on top of visible and UV light emitting diodes
V. Fan Arcara
,
B. Damilano
,
G. Feuillet
,
S. Vezian
,
K. Ayadi
,
et al.
Article dans une revue
hal-02569339v1
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Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots
S. Kalliakos
,
Thierry Bretagnon
,
Pierre Lefebvre
,
Sandrine Juillaguet
,
T. Taliercio
,
et al.
5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004) , Mar 2004, Gyeongju, South Korea. pp.2779-2782,
⟨10.1002/pssb.200404996⟩
Communication dans un congrès
istex
hal-00543738v1
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AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances
Y. Cordier
,
F. Semond
,
P. Lorenzini
,
N. Grandjean
,
F. Natali
,
et al.
2002, pp.61-64
Communication dans un congrès
hal-00149701v1
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Malices et fourberies des boîtes quantiques GaN/AlN.
Pierre Lefebvre
,
Thierry Bretagnon
,
Thierry Taliercio
,
Thierry Guillet
,
Bernard Gil
,
et al.
Journées Nationales Micro- et Opto-électronique – Xèmes JNMO. , Jun 2004, La Grande Motte, France.
Poster de conférence
hal-01312258v1
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Phase transition of indirect excitons in GaN quantum wells.
Thierry Guillet
,
François Chiaruttini
,
Christelle Brimont
,
Thierry Bretagnon
,
Laetitia Doyennette
,
et al.
International Workshop on Nitride semiconductors - IWN2018. , Nov 2018, Kanazawa, Japan
Communication dans un congrès
hal-01910225v1
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Stress distribution of 12 μm thick crack free continuous GaN on patterned Si(110) substrate
T. Hossain
,
J. Wang
,
E. Frayssinet
,
S. Chenot
,
M. Leroux
,
et al.
Article dans une revue
istex
hal-01871861v1
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InGaN islands and thin films grown on epitaxial graphene
C Paillet
,
S. Vézian
,
C. Matei
,
A. Michon
,
B. Damilano
,
et al.
Article dans une revue
hal-03024853v1
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Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.
Pierre Lefebvre
,
Thierry Taliercio
,
Aurélien Morel
,
Jacques Allègre
,
Mathieu Gallart
,
et al.
Article dans une revue
hal-01303205v1
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Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate
Benjamin Damilano
,
Marc Portail
,
Eric Frayssinet
,
Virginie Brändli
,
Florian Faure
,
et al.
Article dans une revue
hal-03418823v1
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Full InGaN red light emitting diodes
A. Dussaigne
,
F. Barbier
,
B. Damilano
,
S. Chenot
,
A. Grenier
,
et al.
Article dans une revue
hal-03418848v1
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Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate
Benjamin Damilano
,
Stéphane Vézian
,
Jean Massies
Article dans une revue
hal-03553871v1
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Investigation of Al y Ga1− y N/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters
Julien Brault
,
Samuel Matta
,
Thi Huong Ngo
,
Maxim Korytov
,
Daniel Rosales
,
et al.
Article dans une revue
hal-01382466v1
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Recent improvements of flexible GaN-based HEMT technology
Sarra Mhedhbi
,
Marie Lesecq
,
Philippe Altuntas
,
N. Defrance
,
Yvon Cordier
,
et al.
Article dans une revue
hal-03270098v1
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On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations
Philippe Vennéguès
,
Ludovic Largeau
,
Virginie Brändli
,
Benjamin Damilano
,
Karine Tavernier
,
et al.
Article dans une revue
hal-03966716v1
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Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion
B. Damilano
,
R. Aristégui
,
H. Teisseyre
,
S. Vézian
,
V. Guigoz
,
et al.
Article dans une revue
hal-04489504v1
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Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform
Farsane Tabataba-Vakili
,
Blandine Alloing
,
Benjamin Damilano
,
Hassen Souissi
,
Christelle Brimont
,
et al.
Article dans une revue
hal-02908380v1
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Light-ion beam for microelectronic applications
L. Hirsch
,
P. Tardy
,
G. Wantz
,
N. Huby
,
P. Moretto
,
et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2005, 240, pp.265-270.
⟨10.1016/j.nimb.2005.06.127⟩
Article dans une revue
istex
in2p3-00024484v1
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Optical properties of GaN/AlN quantum boxes under high photo-excitation
S. Kalliakos
,
Thierry Bretagnon
,
Pierre Lefebvre
,
Sandrine Juillaguet
,
T. Taliercio
,
et al.
5th International Conference on Nitride Semiconductors (ICNS-5) , Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669,
⟨10.1002/pssc.200303270⟩
Communication dans un congrès
istex
hal-00543736v1
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Field distribution and collection efficiency in an AlGaN Metal-Semiconductor-Metal detector
Lionel Hirsch
,
P. Moretto
,
J.Y. Duboz
,
J.L. Reverchon
,
B. Damilano
,
et al.
J. of Appl. Phys , 2002, 1, pp.1
Article dans une revue
hal-00183530v1
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MBE growth of AlGaN/GaN HEMTs on resistive Si (111) substrate with RF small signal and power performances
Y. Cordier
,
F. Semond
,
P. Lorenzini
,
N. Grandjean
,
F. Natali
,
et al.
Journal of Crystal Growth , 2003, 251, pp.811-815
Article dans une revue
hal-00146661v1
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Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape
B. Damilano
,
Marie Lesecq
,
Di Zhou
,
Éric Frayssinet
,
Sebastien Chenot
,
et al.
Article dans une revue
hal-02304909v1
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