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GaN/AlN bilayers for integrated photonics

 Nagesh Bhat , Maksym Gromovyi , Moustafa El Kurdi , Xavier Checoury , Benjamin Damilano , et al.
Optical Materials Express, 2024, 14 (3), pp.792. ⟨10.1364/ome.515887⟩
Article dans une revue hal-04484997v1
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Bandwidth-unlimited polarization-maintaining metasurfaces

 Q Song , S Khadir , S Vézian , B Damilano , P D Mierry , et al.
Science Advances , 2021
Article dans une revue hal-03436097v1
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Ge doped GaN and Al 0.5 Ga 0.5 N-based tunnel junctions on top of visible and UV light emitting diodes

 V. Fan Arcara , B. Damilano , G. Feuillet , S. Vezian , K. Ayadi , et al.
Journal of Applied Physics, 2019, 126 (22), pp.224503. ⟨10.1063/1.5121379⟩
Article dans une revue hal-02569339v1

Growth of GaN Nanostructures with Polar and Semipolar Orientations for the Fabrication of UV LEDs

 Julien Brault , B. Damilano , Daniel Rosales , Thierry Bretagnon , Bernard Gil
SPIE GALLIUM NITRIDE MATERIALS AND DEVICES IX, Feb 2014, san francisco, United States. pp.89860Z, ⟨10.1117/12.2036924⟩
Communication dans un congrès hal-01021435v1

Electrical control of excitons in GaN/(Al,Ga)N quantum wells

 R. Aristegui , F. Chiaruttini , Benoît Jouault , Pierre Lefebvre , Christelle Brimont , et al.
2022
Pré-publication, Document de travail hal-03621796v1

Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.

 Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio , Thierry Guillet , Bernard Gil , et al.
Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland
Poster de conférence hal-01312253v1
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Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process

 Leszek Konczewicz , Sandrine Juillaguet , Marcin Zajac , Elzbieta Litwin-Staszewska , Mohamed Al Khalfioui , et al.
physica status solidi (a), 2023, Nitride Semiconductors, 220 (16), pp.2200769. ⟨10.1002/pssa.202200769⟩
Article dans une revue hal-04248758v1

Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures

 Maria Vladimirova , François Chiaruttini , Thierry Guillet , Christelle Brimont , Pierre Lefebvre , et al.
5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia
Communication dans un congrès hal-02466887v1
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Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

 Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Benjamin Damilano , et al.
Semiconductor Science and Technology, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩
Article dans une revue hal-03035072v1

Nitride-on-silicon platform for UV-visible photonics with integrated microlaser sources.

 Julien Sellés , Thierry Guillet , V. Crepel , B. Gayral , B. Damilano , et al.
META’17, the 8th International Conference on Metamaterials, Photonic Crystals and Plasmonics, Jul 2017, Incheon - Seoul, South Korea
Communication dans un congrès hal-01952364v1

Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots

 S. Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Sandrine Juillaguet , T. Taliercio , et al.
5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩
Communication dans un congrès istex hal-00543738v1
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Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

 B. Damilano , Stephane Vezian , M.P. Chauvat , Pierre Ruterana , Nuño Amador-Méndez , et al.
Journal of Applied Physics, 2022, 132 (3), pp.035302. ⟨10.1063/5.0089892⟩
Article dans une revue hal-03865257v1

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

 Tasnia Hossain , Mohammad Junaebur Rashid , Eric Frayssinet , Nicolas Baron , Benjamin Damilano , et al.
physica status solidi (b), 2018, 255 (5), pp.1700399. ⟨10.1002/pssb.201700399⟩
Article dans une revue hal-01871066v1

Nuclear microprobe analysis of GaN based light emitting diodes

 Lionel Hirsch , Albert-Serge Barriere , P. Moretto , B. Damilano , N. Grandjean , et al.
physica status solidi (a), 2001, 188, pp.1
Article dans une revue hal-00183545v1

Indirect Excitons in Group III-Nitride-Based Quantum Wells.

 Pierre Lefebvre , Benoit Jouault , Thierry Guillet , Christelle Brimont , Pierre Valvin , et al.
CIMTEC 2018 - 14th Intl Conference on Modern Materials and Technologies - 8th Forum on New Materials, Shuji NAKAMURA; University of California; USA (Honorary Chair) Michele MUCCINI; CNR-ISMN; Italy (C, Jun 2018, Pérouse, Italy
Communication dans un congrès hal-01908795v1
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UVA and UVB light emitting diodes with AlyGa1-yN quantum dot active regions covering the 305-335 nm range

 Julien Brault , M. Al Khalfioui , Samuel Matta , B. Damilano , Mathieu Leroux , et al.
Semiconductor Science and Technology, 2018, 33 (7), pp.075007. ⟨10.1088/1361-6641/aac3bf⟩
Article dans une revue hal-01863551v1

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

 K. Lekhal , B. Damilano , H. T. Ngo , Daniel Rosales , P. de Mierry , et al.
Applied Physics Letters, 2015, 106 (14), pp.142101. ⟨10.1063/1.4917222⟩
Article dans une revue hal-01238729v1

Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

 Julien Brault , Daniel Rosales , B. Damilano , Mathieu Leroux , A Courville , et al.
Semiconductor Science and Technology, 2014, 29, pp.084001. ⟨10.1088/0268-1242/29/8/084001⟩
Article dans une revue hal-01025116v1

Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures

 Thi Huong Ngo , Bernard Gil , Benjamin Damilano , Pierre Valvin , A Courville , et al.
Journal of Applied Physics, 2017, 122, pp.063103. ⟨10.1063/1.4997608⟩
Article dans une revue hal-01573934v1

Carrier recombination dynamics in GaN/AlN quantum dots.

 Thierry Bretagnon , Pierre Lefebvre , Pierre Valvin , Thierry Taliercio , Thierry Guillet , et al.
EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France
Poster de conférence hal-01310832v1

Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots.

 Pierre Lefebvre , Sokratis Kalliakos , Thierry Bretagnon , Thierry Taliercio , Bernard Gil , et al.
E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France
Communication dans un congrès hal-01310227v1

Quantum Dot based UV Light Emitting Diodes

 Julien Brault , Samuel Matta , Mohamed Al Khalfioui , Mathieu Leroux , Benjamin Damilano , et al.
12th international conference on nitride semiconductors, Jul 2017, STRASBOURG, France
Poster de conférence hal-01937757v1
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High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

 L. Konczewicz , S. Juillaguet , E. Litwin-Staszewska , R. Piotrzkowski , H. Peyre , et al.
Journal of Applied Physics, 2020, 128 (8), pp.085703. ⟨10.1063/1.5140561⟩
Article dans une revue hal-02931592v1
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Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films

 R. Aristegui , P. Lefebvre , C. Brimont , T. Guillet , M. Vladimirova , et al.
Physical Review B, 2023, 108 (12), pp.125421. ⟨10.1103/PhysRevB.108.125421⟩
Article dans une revue hal-04251300v1

Defect-free InGaN nanowires on silicon whatever the indium composition

 Geoffrey Avit , Elissa Roche , Mohammed Zeghouane , Yamina Andre , Catherine Bougerol , et al.
ICNS 12 - 12th International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France
Poster de conférence hal-01659728v1
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Blue Microlasers Integrated on a Photonic Platform on Silicon

 Farsane Tabataba-Vakili , Laetitia Doyennette , Christelle Brimont , Thierry Guillet , Stephanie Rennesson , et al.
ACS photonics, 2018, 5 (9), pp.3643. ⟨10.1021/acsphotonics.8b00542⟩
Article dans une revue hal-01951027v1

Role of magnetic polarons in ferromagnetic GdN

 F. Natali , B.J. Ruch , H. J. Trodahl , Do Le Binh , S. Vézian , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 87 (3), pp.035202. ⟨10.1103/PhysRevB.87.035202⟩
Article dans une revue hal-01002353v1

Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVD

 Christelle Brimont , Laetitia Doyennette , Farsane Tabataba-Vakili , I. Roland , M. El Kurdi , et al.
International Workshop on Nitride Semiconductors 2018 (IWN 2018), Nov 2018, Kanazawa, Japan
Communication dans un congrès hal-01952415v1

Radiative lifetime in wurtzite GaN/AlN quantum dots.

 Richard Bardoux , T. Bretagnon , Thierry Guillet , P. Lefebvre , T. Taliercio , et al.
International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06), May 2006, Montpellier, France. pp.183, ⟨10.1002/pssc.200673559⟩
Communication dans un congrès istex hal-00389911v1
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Vector Beam Generation from Standing Hollow GaN Nanowire Lasers on Sapphire Substrates

 Masato Takiguchi , Sylvain Sergent , Benjamin Damilano , Stéphane Vézian , Sébastien Chenot , et al.
ACS photonics, 2024, 11 (2), pp.789-794. ⟨10.1021/acsphotonics.3c01735⟩
Article dans une revue hal-04489537v1
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