Formation Mechanisms and Physical Properties of Al-doped ZnO Nanowires by Chemical Bath Deposition
C. Verrier
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E. Appert
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O. Chaix-Pluchery
,
L. Rapenne
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Fares Chouchane
,
et al.
2016 E-MRS Fall Meeting: Symposium C Nano-Engineering of Materials and Interfaces: design, synthesis and applications , A. Illiberi, C. Detavernier, D. Barreca, F. Roozeboom, M. Van Bael, T. Anthopoulos, Sep 2016, Varsaw, Poland
Communication dans un congrès
hal-02016936v1
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Nucleation and growth mechanisms of ZnO nanowires on Au thin films by chemical bath deposition for piezoelectric nanogenerators
Clément Lausecker
,
Bassem Salem
,
Xavier Baillin
,
Hervé Roussel
,
Eirini Sarigiannidou
,
et al.
NANO-structures and nanomaterials SElf-Assembly, NanoSEA 2018 , 2018, Carqueiranne, France
Communication dans un congrès
hal-01954891v1
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Fabrication of Si nanonet field effect transistors by microelectronic processes (invited)
M. Legallais
,
P. Serre
,
Bassem Salem
,
T. Baron
,
V. Stambouli
,
et al.
EMN Meeting on Nanowires (EMN 2016) , May 2016, Amsterdam, Netherlands
Communication dans un congrès
hal-02016950v1
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Potential of nanonets for the 3D integration of biosensors on CMOS (invited)
Mireille Mouis
,
Maxime Legallais
,
Thibauld Cazimajou
,
Fanny Morisot
,
Thuy Thi Thu Nguyen
,
et al.
Journées Nationales Nanofils Semiconducteurs Journées Nationales Nanofils Semiconducteurs, Lyon, 13-15 Nov. 2019 , Nov 2019, Lyon, France
Communication dans un congrès
hal-02400730v1
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Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates
B. Salem
,
J. Olivares
,
J. Brault
,
Christelle Monat
,
Michel Gendry
,
et al.
Microelectronics Journal , 2002, 33, pp.579 - 582
Article dans une revue
hal-02165357v1
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Catalyzed growth study and physical properties of SiGe and Ge NWs
T. Baron
,
A. Potié
,
F. Dhalluin
,
G. Rosaz
,
B. Salem
,
et al.
MRS Fall meeting , Nov 2010, Boston, United States
Communication dans un congrès
hal-00650023v1
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Controlled growth of SiGe nanowires by addition of HCl in the gas phase
A. Potié
,
T. Baron
,
L. Latu-Romain
,
G. Rosaz
,
B. Salem
,
et al.
Journal of Applied Physics , 2011, 110 (2), pp.024311
Article dans une revue
hal-00641300v1
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Control of the interfacial abruptness of Au-catalyzed Si-Si 1−x Ge x heterostructured nanowires grown by vapor–liquid–solid
Priyanka Periwal
,
Thierry Baron
,
Laurence Latu-Romain
,
Bassem Salem
,
Franck Bassani
,
et al.
Article dans une revue
hal-01869721v1
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Caractérisation microondes et in-situ du Nitrure d'Aluminium (AlN) en configuration Métal/Isolant/Métal
T. Bertaud
,
E. Defay
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C. Bermond
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T. Lacrevaz
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J. Abergel
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et al.
11e Journées Caractérisation Microondes et Matériaux, , Apr 2010, Brest, France
Communication dans un congrès
hal-00604505v1
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Enhancing the Output Voltage of Piezoelectric Nanogenerators Based on ZnO Nanowires Grown by Chemical Bath Deposition Using Compensatory Cu Doping
Manuel Manrique
,
Vincent Consonni
,
Sarah Boubenia
,
Hervé Roussel
,
Mohammed Zeghouane
,
et al.
Article dans une revue
hal-04509878v1
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Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing
Maxime Legallais
,
Hussein Mehdi
,
Sylvain David
,
Franck Bassani
,
Sébastien Labau
,
et al.
Article dans une revue
hal-03030507v1
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Growth and electrical properties of in-situ doped GeSn nanowires for low power tunnel Field Effect Transistor
T. Haffner
,
F. Bassani
,
P. Gentile
,
N. Pauc
,
E. Martinez
,
et al.
2019 International Conference on Solid State Devices and Materials (SSDM2019) , 2019, Nagoya, Japan
Communication dans un congrès
hal-02332962v1
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Enhancing the incorporation of Sn in vapor–liquid–solid GeSn nanowires by modulation of the droplet composition
Mohammed Zeghouane
,
Hadi Hijazi
,
Franck Bassani
,
Gauthier Lefevre
,
Eugenie Martinez
,
et al.
Article dans une revue
hal-03867559v1
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Effective generation lifetime depth profile in InAs quantum dots grown on InAlAs/InP(0 0 1)
R. Ajjel
,
M. Baira
,
M Maaref
,
B. Salem
,
B. Bremond
,
et al.
Article dans une revue
istex
hal-02089702v1
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Anti-correlated vertical self-organization of InAs nanowires in stacked structures on InP(001) with InAlAs spacer layer
Michel Gendry
,
J. Brault
,
B. Salem
,
G. Bremond
,
O. Marty
Article dans une revue
istex
hal-02090492v1
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Emerging Nanotechnology for integration of Nanostructures in Nanoelectronic devices
Thierry Baron
,
Claire Agraffeil
,
Florian Dhalluin
,
Martin Kogelschtaz
,
Gilles Cunge
,
et al.
2009 Advanced Research Workshop (FTM-6) Future Trends in Microelectronics: Unmapped Roads , 2009, Sardinia, Italy.
⟨10.1002/9780470649343.ch14⟩
Communication dans un congrès
hal-00461115v1
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Control of In droplets for self-catalyzed growth of InP nanowires by VLS-MBE on silicon substrates
Hervé Dumont
,
Jean-Baptiste Barakat
,
Djawhar Ferrah
,
Geneviève Grenet
,
Philippe Regreny
,
et al.
CSW 2014 , 2014, Montpellier, France
Communication dans un congrès
hal-01489939v1
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Pulsed photoconductive antenna terahertz sources made on ion-implanted GaAs substrates
B. Salem
,
D Morris
,
V. Aimez
,
J Beerens
,
J. Beauvais
,
et al.
Article dans une revue
hal-02353363v1
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Arsenic pressure and spacer layer thickness effects on the optical properties of stacked InAs/InAlAs quantum dot array
M. Hjiri
,
F. Hassen
,
H. Maaref
,
A. Jbeli
,
M. Senes
,
et al.
Article dans une revue
istex
hal-02353353v1
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Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials
B. Salem
,
D Morris
,
V. Aimez
,
J. Beauvais
,
D Houde
Article dans une revue
istex
hal-02352924v1
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Fabrication and characterization of a germanium nanowire light emitting diode
Johannes Greil
,
Emmerich Bertagnolli
,
Bassem Salem
,
Thierry Baron
,
Pascal Gentile
,
et al.
Article dans une revue
cea-01988258v1
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Catalyst Assisted Silicon Nanowires Growth for Nanoelectronics
F. Dhalluin
,
P. Desre
,
T. Baron
,
P. Ferret
,
B. Salem
,
et al.
E-MRS , 2007, strasbourg, France
Communication dans un congrès
hal-00395914v1
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Dopant profiling of individual Si nanowires using scanning capacitance microscopy
F. Bassani
,
P. Periwal
,
D. Mariolle
,
N. Chevalier
,
B. Salem
,
et al.
EMRS 2013 , 2013, Strasbourg, France
Communication dans un congrès
hal-00955739v1
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Verifying the band gap narrowing in tensile strained Ge nanowires by electrical means
M Bartmann
,
M Sistani
,
S Glassner
,
B Salem
,
T Baron
,
et al.
Article dans une revue
hal-03449043v1
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Influence of the Cl$_2$ etching on the Al$_2$O$_3$ /GaN metal–oxide–semiconductor interface
T. Meyer
,
S. Boubenia
,
C. Petit-Etienne
,
B. Salem
,
E. Pargon
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics , 2022, 40 (6), pp.062208.
⟨10.1116/6.0002133⟩
Article dans une revue
hal-03858139v1
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Elaboration and Characterization of Si-SiGe Axial Heterostructures in Nanowires
P. Periwal
,
F. Bassani
,
G. Patriarche
,
L. Latu-Romain
,
V. Brouzet
,
et al.
E MRS , May 2013, Strasbourg, France
Communication dans un congrès
hal-00944259v1
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Postgrowth intermixing of strain engineered InAs/GaAs quantum dots
O. Nasr
,
M.H. Hadj Alouane
,
B. Ilahi
,
B. Salem
,
L. Sfaxi
,
et al.
Article dans une revue
hal-01798436v1
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Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots
B. Ilahi
,
L. Sfaxi
,
F. Hassen
,
B. Salem
,
G. Bremond
,
et al.
Article dans une revue
istex
hal-02353058v1
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Monolithically integrated InGaAs/AlGaAs multiple quantum well photodetectors on 300 mm Si wafers
H. Mehdi
,
M. Martin
,
C. Jany
,
L. Virot
,
J. Hartmann
,
et al.
Article dans une revue
hal-03449032v1
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Electrical characteristics of horizontal and vertical field-effect transistors using non-intentionally doped Si and SiGe nanowires.
G. Rosaz
,
B. Salem
,
N. Pauc
,
P. Gentile
,
A. Potié
,
et al.
4th Meeting of the French GDR "Nanofils Semiconducteurs" , Jan 2011, Porquerolles, France
Communication dans un congrès
hal-00647423v1
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