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24

Audrey Valentin


 

Depuis 2011 : Maîtresse de conférences, Laboratoire des Sciences des Procédés et des Matériaux (LSPM), Université Sorbonne Paris Nord (ex Université Paris 13).

u  Caractérisation électrique des couches de diamant monocristallin.

u  Etude de structures graphite/diamant obtenues par implantation ionique.

u  Simulation de la croissance du diamant et du graphène par méthode Monte-Carlo cinétique et par modélisation géométrique.

2009 à 2011 : Post-doc, CEA-DAM.
Etude de l’effet de la prise en compte de l’ionisation à basse énergie sur la simulation de la trace des ions lourds dans les composants électroniques.

u  Modélisation de l'interaction particule-matière pour les particules de basse énergie.

u  Implémentation du modèle dans l'outil de simulation Geant4.

2008 à 2009 : ATER, Institut d’Electronique Fondamentale (IEF), Université Paris Sud 11.

u  Modélisation physique du courant à travers 2 boîtes quantiques en couplage faible.

u  Modélisation physique du courant à travers des transistors à 1 électron.

u  Etude de la structure électronique et de la dispersion des phonons dans les nanorubans de graphène.

2005 à 2008 : Thèse de doctorat, Institut d’Electronique Fondamentale (IEF), Université Paris Sud 11.
Modélisation de l’effet tunnel à un électron dans les dispositifs à nanocristaux semiconducteurs : effet tunnel à un électron assisté par phonon.

 

 


Journal articles14 documents

  • Audrey Valentin, Ovidiu Brinza, Samir Farhat, Jocelyn Achard, Fabien Bénédic. 3D kinetic Monte-Carlo simulations of diamond growth on (1 0 0) surfaces. Diamond and Related Materials, Elsevier, 2022, pp.108865. ⟨10.1016/j.diamond.2022.108865⟩. ⟨hal-03544300⟩
  • Mary de Feudis, V. Mille, A. Valentin, O. Brinza, Alexandre Tallaire, et al.. Ohmic graphite-metal contacts on oxygen-terminated lightly boron-doped CVD monocrystalline diamond. Diamond and Related Materials, Elsevier, 2019, 92, pp.18-24. ⟨10.1016/j.diamond.2018.12.009⟩. ⟨hal-02346255⟩
  • Audrey Valentin, Mary de Feudis, Ovidiu Brinza, André Tardieu, Ludovic William, et al.. Characteristics of He Ion Implanted Layers on Single-Crystal Diamond. physica status solidi (a), Wiley, 2018, 215 (22), pp.1800264. ⟨10.1002/pssa.201800264⟩. ⟨hal-02346258⟩
  • Marie-Amandine Pinault-Thaury, A. Tallaire, A. Valentin, V. Mille, L. William, et al.. Growth of thick and heavily boron-doped (113)-oriented CVD diamond films. Diamond and Related Materials, Elsevier, 2016, 66, pp.61-66. ⟨10.1016/j.diamond.2016.03.020⟩. ⟨hal-02441087⟩
  • Audrey Valentin, André Tardieu, Vianney Mille, Alexandre Tallaire, Jocelyn Achard, et al.. Polarization effect on time-of-flight measurements performed on a CVD diamond single crystal. physica status solidi (a), Wiley, 2015, 212 (11), pp.2636-2640. ⟨10.1002/pssa.201532205⟩. ⟨hal-02492758⟩
  • Audrey Valentin, M. Raine, J.-E. Sauvestre, M. Gaillardin, P. Paillet. Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2012, 288, pp.66-73. ⟨10.1016/j.nimb.2012.07.028⟩. ⟨hal-03440042⟩
  • Audrey Valentin, M. Raine, M. Gaillardin, P. Paillet. Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for protons and heavy ions in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2012, 287, pp.124-129. ⟨10.1016/j.nimb.2012.06.007⟩. ⟨hal-03440051⟩
  • Audrey Valentin, M. Raine, M. Gaillardin, P. Paillet. Improved Simulation of Ion Track Structures Using New Geant4 Models—Impact on the Modeling of Advanced Technologies Response. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (6), pp.2697-2703. ⟨10.1109/TNS.2012.2220783⟩. ⟨hal-03440054⟩
  • Audrey Valentin, Vincent Talbo, Sylvie Galdin-Retailleau, Philippe Dollfus. Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2011, 58 (10), pp.3286-3293. ⟨10.1109/TED.2011.2161611⟩. ⟨hal-03440056⟩
  • Audrey Valentin, F. Mazzamuto, J. Saint-Martin, C. Chassat, P. Dollfus. Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study. Journal of Applied Physics, American Institute of Physics, 2011, 109 (6), pp.064516. ⟨10.1063/1.3552293⟩. ⟨hal-03440047⟩
  • Audrey Valentin, Sylvie Galdin-Retailleau, Philippe Dollfus. Phonon effect on single-electron transport in two-dot semiconductor devices. Journal of Applied Physics, American Institute of Physics, 2009, 106 (4), pp.044501. ⟨10.1063/1.3186035⟩. ⟨hal-03440059⟩
  • Audrey Valentin, Johann Sée, Sylvie Galdin-Retailleau, Philippe Dollfus. Study of phonon modes in silicon nanocrystals using the adiabatic bond charge model. Journal of Physics: Condensed Matter, IOP Publishing, 2008, 20 (14), pp.145213. ⟨10.1088/0953-8984/20/14/145213⟩. ⟨hal-03440045⟩
  • D. Querlioz, Y. Apertet, A. Valentin, K. Huet, A. Bournel, et al.. Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder. Applied Physics Letters, American Institute of Physics, 2008, 92 (4), pp.042108. ⟨10.1063/1.2838354⟩. ⟨hal-02452618⟩
  • Audrey Valentin, J Sée, S Galdin-Retailleau, P Dollfus. Phonon dispersion in silicon nanocrystals. Journal of Physics: Conference Series, IOP Publishing, 2007, 92, pp.012048. ⟨10.1088/1742-6596/92/1/012048⟩. ⟨hal-03440066⟩

Conference papers5 documents

  • Audrey Valentin, Ovidiu Brinza, Samir Farhat, Lahcene Mehmel, Fabien Bénédic, et al.. Multi-scale simulation of monocrystalline diamond growth on microstructured substrates. ICDCM 31, Sep 2021, En ligne, France. ⟨hal-03578230⟩
  • Audrey Valentin, Ovidiu Brinza, Vianney Mille, Riadh Issaoui, Mary de Feudis, et al.. Graphitic layers formed on single crystal diamond for ohmic contact optimization. French-Japanese workshop on diamond power devices, Jan 2019, Aussois, France. ⟨hal-03578171⟩
  • Audrey Valentin, André Tardieu, Vianney Mille, Alexandre Tallaire, Jocelyn Achard, et al.. Polarization effect on Time-of-Flight measurements performed on CVD diamond monocrystals. SBDD XX, Feb 2015, Hasselt, Belgium. ⟨hal-03578201⟩
  • Audrey Valentin, S. Galdin-Retailleau, P. Dollfus. Sequential Transport in a Two-Dot Device. 2009 13th International Workshop on Computational Electronics (IWCE 2009), May 2009, Beijing, France. pp.1-4, ⟨10.1109/IWCE.2009.5091148⟩. ⟨hal-03440075⟩
  • Audrey Valentin, J. See, S. Galdin-Retailleau, P. Dollfus. Electron/phonon interaction in silicon quantum dots. 2008 9th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2008, Udine, Italy. pp.57-60, ⟨10.1109/ULIS.2008.4527140⟩. ⟨hal-03440071⟩

Poster communications4 documents

  • Audrey Valentin, Ovidiu Brinza, Samir Farhat, Fabien Bénédic. 2D Monte-Carlo simulation of diamond. Surface and Bulk Defects in Diamond ( SBDD ) XXV, Mar 2020, Hasselt, Belgium. ⟨hal-03578178⟩
  • Audrey Valentin, Mary de Feudis, Ovidiu Brinza, André Tardieu, Riadh Issaoui, et al.. Characteristics of He ion implanted layers on single-crystal diamond. Surface and Bulk Defects in Diamond ( SBDD ) XXIII, Mar 2018, Hasselt, Belgium. ⟨hal-03578185⟩
  • Audrey Valentin, A Tallaire, V Mille, L William, M Pinault-Thaury, et al.. Growth of boron doped CVD diamond on a (113) orientation for power electronic devices. Surface and Bulk Defects in Diamond (SBDD ) XXI, Mar 2016, Hasselt, Belgium. ⟨hal-03578189⟩
  • Audrey Valentin, V Mille, A Tallaire, J Achard, A Gicquel. Mobilities in high-quality CVD diamond crystals evaluated by time-offlight measurements: experimental and simulation results. Surface and Bulk Defects in Diamond ( SBDD ) XVIII, Mar 2013, Hasselt, Belgium. ⟨hal-03578219⟩

Theses1 document

  • Audrey Valentin. Modélisation de l'effet tunnel à un électron dans les dispositifs à nanocristaux semiconducteurs : effet tunnel à un électron assisté par phonon. Micro et nanotechnologies/Microélectronique. Université Paris Sud - Paris XI, 2008. Français. ⟨tel-00350414⟩