Arouna DARGA
18
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Interface properties of GaP/Si heterojunction fabricated by PE-ALDEMRS Spring Meeting 2018, Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01801489v1
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Characterization of GaP/Si heterojunctions by space charge capacitance measurementsE-MRS 2017 Spring Meeting, May 2017, Strasbourg, France
Communication dans un congrès
hal-01632942v1
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Capacitance characterization of GaP/n-Si structures grown by PE-ALD4th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint-Petersburg OPEN 2017), Apr 2017, Saint-Petersbourg, France. pp.052027, ⟨10.1088/1742-6596/917/5/052027⟩
Communication dans un congrès
hal-01653684v1
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Electronic properties of thin GaP layers grown on silicon wafersJournées Nationales du Photovoltaïque (JNPV 2016), Nov 2016, Dourdan, France
Communication dans un congrès
hal-01474776v1
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Cellules PV d’aujourd’hui et du futur, évolution du marché mondialLe marché solaire en Afrique, atouts et faiblesses, Jun 2015, Ouagadougou, Burkina Faso
Communication dans un congrès
hal-01253414v1
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Electronic transport properties of Cu2ZnSn(S,Se)4 thin films obtained from Lift-off processE-MRS Spring Meeting 2014, European Materials Research Society, May 2014, Lille, France
Communication dans un congrès
hal-01099377v1
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Etude des propriétés du transport électroniques dans les cellules à base de Cu2ZnSn(S, Se)4 (CZTSSe)JNPV 2012, Dec 2012, Chantilly, France
Communication dans un congrès
hal-00779016v1
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Admittance spectroscopy of wide band gap CIGSe solar cells: Influence of the Cu off-stoechiometryE-MRS Spring Meeting 2012, May 2012, Strasbourg, France
Communication dans un congrès
hal-00779002v1
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Influence of Cu Off-Stoechiometry on Wide Band Gap CIGSe Solar Cells Electronic PropertiesICANS24, Aug 2011, Nara, Japan
Communication dans un congrès
hal-00710757v1
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Investigation of trap states in Gallium Phosphide / Silicon heterojunction devices from capacitance techniquesEMRS Spring Meeting 2018, Jun 2018, Strasbourg, France
Poster de conférence
hal-01801510v1
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Defect study of Ga(In)P(NAs) based solar cells grown on siliconE-MRS 2016, May 2016, Lille, France
Poster de conférence
hal-01363691v1
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Admittance spectroscopy of Ga(In)P(NAs) based solar cells grown on siliconJournées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France
Poster de conférence
hal-01238537v1
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Deep-level transient spectroscopy (DLTS) TCAD-based simulationPoster de conférence hal-01253399v1 |