Arnaud Virazel
17%
Libre accès
12
Documents
Affiliations actuelles
- 1100642
Identifiants chercheurs
arnaud-virazel- IdRef : 068454724
- ISNI : 0000000139422532
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0000-0001-7398-7107
Présentation
Enseignant-chercheur au **LIRMM** dans l’équipe de recherche **TEST**: Test and dEpendability of microelectronic integrated SysTems.
<https://www.lirmm.fr/recherche/equipes/test>
**Cours** :
<http://www.lirmm.fr/~virazel/COURS/index.php?dir=L1%20-%20HLEE202/Cours/>
**Researchgate** :
[https://www.researchgate.net/profile/Arnaud\_Virazel](https://www.researchgate.net/profile/Arnaud_Virazel)
Publications
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Impact of Resistive-Bridging Defects in SRAM at Different Technology NodesJournal of Electronic Testing: : Theory and Applications, 2012, 28 (3), pp.317-329. ⟨10.1007/s10836-012-5291-6⟩
Article dans une revue
lirmm-00805017v1
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Impact of Resistive-Bridging Defects in SRAM Core-CellDELTA'10: International Symposium on Electronic Design, Test & Applications, Ho Chi Minh, Vietnam. pp.265-270
Communication dans un congrès
lirmm-00553592v1
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On Using Address Scrambling to Implement Defect Tolerance in SRAMsITC'2011: International Test Conference, Sep 2011, Anaheim, CA, United States. pp.N/A
Communication dans un congrès
lirmm-00647773v1
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On Using Address Scrambling for Defect Tolerance in SRAMsInternational test Conference, Sep 2011, Anaheim, CA, United States. pp.1-8, ⟨10.1109/TEST.2011.6139149⟩
Communication dans un congrès
lirmm-00805334v1
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Variability Analysis of an SRAM Test ChipETS: European Test Symposium, May 2011, Trondheim, Norway
Communication dans un congrès
lirmm-00651791v1
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Detecting NBTI Induced Failures in SRAM Core-CellsVTS'10: VLSI Test Symposium, Santa Cruz, CA, United States. pp.75-80
Communication dans un congrès
lirmm-00553612v1
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Setting Test Conditions for Detecting Faults Induced by Random Dopant Fluctuation in SRAM Core-CellsVARI: Workshop on CMOS Variability, 2010, Montpellier, France
Communication dans un congrès
lirmm-00553626v1
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Setting Test Conditions for Improving SRAM ReliabilityETS: European Test Symposium, May 2010, Prague, Czech Republic. pp.257-262
Communication dans un congrès
lirmm-00492741v1
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Analysis of Resistive-Bridging Defects in SRAM Core-Cells: a Comparative Study from 90nm down to 40nm Technology NodesETS: European Test Symposium, May 2010, Prague, Czech Republic. pp.132-137
Communication dans un congrès
lirmm-00493236v1
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A Statistical Simulation Method for Reliability Analysis of SRAM Core-CellsDAC: Design Automation Conference, Jun 2010, Anaheim, United States. pp.853-856
Communication dans un congrès
lirmm-00553619v1
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SRAM Core-cell Quality MetricsGDR SOC SIP, France. 2009
Poster de conférence
lirmm-00434962v1
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Analysis of Resistive-Bridging Defects in SRAM Core-Cell: Impact within the Core-Cell and in the Memory ArrayETS: European Test Symposium, May 2009, Sevilla, Spain. 14th IEEE European Test Symposium, 2009
Poster de conférence
lirmm-00433796v1
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