Dose rate effects in bipolar oxides: Competition between trap filling and recombination
J. Boch
,
Frédéric Saigné
,
Antoine Touboul
,
S. Ducret
,
F Carlotti
,
et al.
Article dans une revue
hal-01803025v1
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Radiation Environment Effects on an Erbium-doped Fiber Amplifier
M. Caussanel
,
O. Gilard
,
M. Sotom
,
P. Signoret
,
Antoine Touboul
,
et al.
RADECS , 2003, Noordwijk, Netherlands
Communication dans un congrès
hal-02092893v1
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Trench Fieldstop IGBT failures at ground level
Antoine Touboul
,
Frédéric Wrobel
SEE Symposium , 2012, San Diego, United States
Communication dans un congrès
hal-01935981v1
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Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT
Lionel Foro
,
Antoine Touboul
,
Alain Michez
,
Frédéric Wrobel
,
Paolo Rech
,
et al.
Article dans une revue
lirmm-01237646v1
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Testing a Commercial MRAM under Neutron and Alpha Radiation in Dynamic Mode
Georgios Tsiligiannis
,
Luigi Dilillo
,
Alberto Bosio
,
Patrick Girard
,
Aida Todri-Sanial
,
et al.
Article dans une revue
lirmm-00805005v1
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Single Event Latchup Cross Section Calculation from TCAD Simulations – Effects of the Doping Profiles and Anode to Cathode Spacing
S. Guagliardo
,
Frédéric Wrobel
,
Y. Q. Aguiar
,
J.-L. Autran
,
P. Leroux
,
et al.
IEEE RADECS 2019 , Sep 2019, Montpellier, France
Communication dans un congrès
hal-02446849v1
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Total Ionizing Dose Effect in LDMOS Oxides and Devices
T. Borel
,
S. Furic
,
E. Leduc
,
A. Michez
,
J. Boch
,
et al.
IEEE RADECS2018 , 2018, Goteborg, Sweden
Communication dans un congrès
hal-02022571v1
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Study of Latent Defects Induced by Swift Heavy Ion Irradiation on MOS Devices Gate Oxide
M. Marinoni
,
Antoine Touboul
,
D. Zander
,
C. Petit
,
A.M.J.F. Carvalho
,
et al.
45th IEEE Nuclear Space and Radiation Effects Conference , 2008, Tucson, United States
Communication dans un congrès
hal-01822461v1
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On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum
Antoine Touboul
,
L. Foro
,
Frédéric Wrobel
,
Frédéric Saigné
Article dans une revue
istex
hal-01633517v1
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Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation
Andrea Coronetti
,
Ruben Garcia Alia
,
Jan Budroweit
,
Tomasz Rajkowski
,
Israel Da Costa Lopes
,
et al.
Article dans une revue
hal-03341566v1
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Low-frequency drain noise in AlGaN/GaN HEMTs on Si substrate
N. Malbert
,
N. Labat
,
A. Curutchet
,
A. Touboul
,
Christophe Gaquière
,
et al.
2003, pp.342-349
Communication dans un congrès
hal-00162738v1
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Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation
A. Privat
,
Antoine Touboul
,
A. Michez
,
S. Bourdarie
,
J.-R. Vaillé
,
et al.
Article dans une revue
hal-01634014v1
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Effect of the Uranium Decay Chain Disequilibrium on Alpha Disintegration Rate
Michael Gedion
,
Frédéric Wrobel
,
Frédéric Saigné
,
M. Portier
,
Antoine Touboul
,
et al.
Article dans une revue
hal-01632775v1
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Impact of Single Event Gate Rupture and latent defects on Power MOSFETs switching operation
A. Privat
,
Antoine Touboul
,
M. Petit
,
J. Huselstein
,
Frédéric Wrobel
,
et al.
IEEE RADECS 2013 , 2013, Oxford, United Kingdom
Communication dans un congrès
hal-01824651v1
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NUMERICAL SIMULATIONS TO IMPROVE THE ACCURACY OF ELECTRON-BEAM TESTING ON PASSIVATED INTEGRATED CIRCUITS
H. Fremont
,
A. Touboul
,
D. Gobled
,
Y. Danto
Article dans une revue
istex
jpa-00227927v1
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Proton Flux Anisotropy in the Atmosphere: Experiment and Modeling
Frédéric Wrobel
,
Jean-Roch Vaillé
,
Denis Pantel
,
Luigi Dilillo
,
Jean-Marc J.-M. Galliere
,
et al.
RADECS: European Conference on Radiation and Its Effects on Components and Systems , Sep 2012, Biarritz, France. pp.1-4
Communication dans un congrès
lirmm-00805150v1
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Single swift heavy ion-induced trail of discontinuous nanostructures on SiO2 surface under grazing incidence
A.M.J.F. Carvalho
,
Antoine Touboul
,
M. Marinoni
,
C. Guasch
,
M. Ramonda
,
et al.
ICSI-5 , 2007, Marseille, France
Communication dans un congrès
hal-01822417v1
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Development and evaluation of a flexible instrumentation layer for system-level testing of radiation effects
Israel C Lopes
,
Vincent Pouget
,
Frédéric Wrobel
,
Frédéric Saigné
,
Antoine Touboul
,
et al.
Communication dans un congrès
hal-03251533v1
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Atmospheric radiation effects on power devices
Antoine Touboul
Short Course IEEE RADECS “atmospheric radiation effects on power devices” , 2012, Biarritz, France
Communication dans un congrès
hal-01935755v1
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Swift heavy ion-induced silicon dioxide nanostructuration: experimental observation of velocity effect
Antoine Touboul
,
A. Privat
,
R. Arinero
,
Frédéric Wrobel
,
E. Lorfèvre
,
et al.
Article dans une revue
istex
hal-01633533v1
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A calculation method to estimate single event upset cross section
Frédéric Wrobel
,
Antoine Touboul
,
Vincent Pouget
,
Luigi Dilillo
,
Jérôme Boch
,
et al.
Article dans une revue
hal-01636059v1
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Gate voltage contribution to neutron-induced SEB of Trench Gate Fieldstop IGBT
Lionel Foro
,
Antoine Touboul
,
Frédéric Wrobel
,
Paolo Rech
,
Luigi Dilillo
,
et al.
Communication dans un congrès
lirmm-01237617v1
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On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive operating area determination
A. Privat
,
Antoine Touboul
,
A. Michez
,
S. Bourdarie
,
J.-R. Vaillé
,
et al.
50th IEEE Nuclear Space and Radiation Effects Conference , 2014, Paris, France
Communication dans un congrès
hal-01824688v1
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Tests de circuits intégrés au MEB à travers les couches isolantes : correction des erreurs par simulation numérique
H. Frémont
,
A. Touboul
,
Y. Danto
Article dans une revue
istex
jpa-00246212v1
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Etude de la capacité de stockage maxima dans un dispositif à transfert de charges en volume
D. Rigaud
,
D. Sodini
,
A. Touboul
,
K. Torbati
Article dans une revue
istex
jpa-00245288v1
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Contribution of Latent Defects Induced by High-Energy Heavy Ion Irradiation on the Gate Oxide Breakdown
Mathias Marinoni
,
Antoine Touboul
,
Aminata M. J. F. Carvalho
,
Frédéric Saigné
,
Frédéric Wrobel
,
et al.
Article dans une revue
hal-01631574v1
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Monte Carlo simulation of particle-induced bit upsets
Frédéric Wrobel
,
Antoine Touboul
,
Jean-Roch Vaillé
,
Jérôme Boch
,
Frédéric Saigné
13th International Conference on Radiation Shielding (ICRS-13) & 19th Topical Meeting of the Radiation Protection & Shielding Division of the American Nuclear Society -2016 (RPSD-2016) , Oct 2016, Paris, France. pp.06033,
⟨10.1051/epjconf/201715306033⟩
Communication dans un congrès
hal-01645320v1
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Off-state and on-state breakdown in GaAs MESFET, PHEMT and power PHEMT
N. Ismaïl
,
N. Malbert
,
N. Labat
,
A. Touboul
,
J.L. Muraro
physica status solidi (c) , 2006, 49 (3), pp.499-503
Article dans une revue
hal-00185717v1
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Impact of Complex-Logic Cell Layout on the Single-Event Transient Sensitivity
Ygor Quadros de Aguiar
,
Frédéric Wrobel
,
Jean-Luc Autran
,
Paul Leroux
,
Frédéric Saigné
,
et al.
IEEE RADECS2018 , Sep 2018, Goteborg, Sweden
Communication dans un congrès
hal-02086422v1
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Effect of Temperature on Single Event Latchup Sensitivity
S. Guagliardo
,
Frédéric Wrobel
,
Ygor Quadros de Aguiar
,
Jean-Luc Autran
,
P. Leroux
,
et al.
Communication dans un congrès
hal-03187841v1
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