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Reversible Optical Doping of graphene

Antoine Tiberj , Miguel Rubio-Roy , Matthieu Paillet , Jean-Roch Huntzinger , Périne Landois , et al.
GDR-I GNT 2013, Apr 2013, Guidel-Plages, Lorient, France
Communication dans un congrès hal-00813854v1
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Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

Antoine Tiberj , Nicolas Camara , Philippe Godignon , Jean Camassel
Nanoscale Research Letters, 2011, 6, pp.478. ⟨10.1186/1556-276X-6-478⟩
Article dans une revue hal-00666152v1

Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN/GaN heterostructures

P. Lorenzini , Z. Bougrioua , Antoine Tiberj , R. Tauk , M. Azize , et al.
Applied Physics Letters, 2005, 87, pp.232107. ⟨10.1063/1.2140880⟩
Article dans une revue hal-00543864v1

Strain effects in device processing of silicon-on-insulator materials

Jean Camassel , Antoine Tiberj
11th International Conference on Solid Films and Surfaces (ICSFE-11), Jul 2002, MARSEILLE (FRANCE), France. pp.742-748
Communication dans un congrès hal-00543872v1

Process-induced strain in silicon-on-insulator materials

Antoine Tiberj , B. Fraisse , Caroline Blanc , Sylvie Contreras , Jean Camassel
Conference on Extended Defects in Semiconductors (EDS 2002), Jun 2002, BOLOGNA (ITALY), France. pp.13411-13416
Communication dans un congrès hal-00543870v1

Very large monolayer graphene ribbons grown on SiC

Nicolas Camara , G. Rius , Jean Roch Huntzinger , Antoine Tiberj , N. Mestres , et al.
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy
Communication dans un congrès hal-00390794v1

Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC

Marc Portail , A. Michon , S. Vézian , D. Lefebvre , S. Chenot , et al.
Journal of Crystal Growth, 2012, 349 (1), pp.27-35. ⟨10.1016/j.jcrysgro.2012.04.004⟩
Article dans une revue istex hal-00803559v1
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Genèse, contenu et perspectives d'un module expérimental d'éducation à la transition écologique à la Faculté des Sciences de l'université de Montpellier.

Olivier Arnould , Sandrine Bardet , Jean-Louis Bantignies , Adeline Barnaud , Ilham Bentaleb , et al.
Enseigner les Transitions Ecologiques et Sociales dans le Supérieur, Jul 2023, Paris, France. 2023
Poster de conférence hal-04204671v1

Extended Defects in SiC: Selective Etching and Raman Study

J L Weyher , Antoine Tiberj , G. Nowak , J C Culbertson , J A Freitas
Journal of Electronic Materials, 2023, 52 (8), pp.5039-5046. ⟨10.1007/s11664-023-10272-6⟩
Article dans une revue hal-04214705v1
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Analysis of the gallium gradient in Cu(In1-xGax)Se-2 absorbers by X-ray diffraction

C. Iatosti , Matthieu Moret , Antoine Tiberj , Olivier Briot
Solar Energy Materials and Solar Cells, 2021, 220, pp.110847. ⟨10.1016/j.solmat.2020.110847⟩
Article dans une revue hal-03175976v1

Differences Between Graphene Grown On Si-face And C-face

Nicolas Camara , A. Caboni , Jean-Roch Huntzinger , Antoine Tiberj , N. Mestres , et al.
13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.581-584
Communication dans un congrès hal-00543832v1

AFM and Raman Studies of Graphene Exfoliated on SiC

Antoine Tiberj , Marta Martin-Fernandez , Nicolas Camara , P. Poncharal , T. Michel , et al.
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.215-218
Communication dans un congrès hal-00411935v1

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

J. Eid , I.-G. Galben , G. Zoulis , Teddy Robert , D. Chaussende , et al.
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48
Communication dans un congrès hal-00390466v1

Selective epitaxial growth of graphene on SiC

Nicolas Camara , G. Rius , Jean-Roch Huntzinger , Antoine Tiberj , N. Mestres , et al.
Applied Physics Letters, 2008, 93, pp.123503. ⟨10.1063/1.2988645⟩
Article dans une revue hal-00543852v1

Raman spectroscopy as a tool to study the doping of graphene

Antoine Tiberj , Miguel Rubio-Roy , Romain Parret , Matthieu Paillet , Jean-Roch Huntzinger , et al.
Nanospain Conference 2014, Mar 2014, Spain
Communication dans un congrès hal-00989874v1

X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD

Adrien Michon , Ludovic Largeau , Antoine Tiberj , Jean Roch Huntzinger , Olivia Mauguin , et al.
Silicon Carbide and Related Materials 2012, Sep 2012, Saint-Petersburg, Russia. pp.117 - 120, ⟨10.4028/www.scientific.net/MSF.740-742.117⟩
Communication dans un congrès hal-01617115v1

Uniformity of Epitaxial Graphene on On-axis and Off-axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping

S. Sonde , F. Giannazzo , Jean-Roch Huntzinger , Antoine Tiberj , M. Syvajarvi , et al.
13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.607-610, ⟨10.4028/www.scientific.net/MSF.645-648.607⟩
Communication dans un congrès hal-00543841v1
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Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

Bilal Jabakhanji , A. Michon , Christophe Consejo , Wilfried Desrat , M. Portail , et al.
Physical Review B, 2014, 89 (8), pp.085422. ⟨10.1103/PhysRevB.89.085422⟩
Article dans une revue hal-01200760v1

Raman spectroscopy of long isolated graphene ribbons grown on the C face of 6H-SiC

Antoine Tiberj , Jean-Roch Huntzinger , Benoit Jouault , Bilal Jabakhanji , Jean Camassel , et al.
Nanospain Conf 2010, Mar 2010, Malaga, Spain
Communication dans un congrès hal-00803583v1
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Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

Nicolas Camara , Benoit Jouault , Bilal Jabakhanji , Alessandra Caboni , Antoine Tiberj , et al.
Nanoscale Research Letters, 2011, 6, pp.141. ⟨10.1186/1556-276X-6-141⟩
Article dans une revue hal-00666145v1
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Multiscale investigation of graphene layers on 6H-SiC(000-1)

Antoine Tiberj , Jean-Roch Huntzinger , Jean Camassel , Fanny Hiebel , Ather Mahmood , et al.
Nanoscale Research Letters, 2011, 6, pp.171. ⟨10.1186/1556-276X-6-171⟩
Article dans une revue hal-00666156v1

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates

Nicolas Camara , Jean-Roch Huntzinger , Antoine Tiberj , G. Rius , Benoit Jouault , et al.
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), France. pp.203-206
Communication dans un congrès hal-00543294v1
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Stress Metrology : The challenge for the next generation of engineered wafers

Antoine Tiberj , Vincent Paillard , Cécile Aulnette , Nicolas Daval , Myriam Moreau , et al.
MRS Spring Meeting Symposium B: High-Mobility Group-IV Materials and Devices, Apr 2004, San Francisco, United States. pp.B3.1, ⟨10.1557/PROC-809-B3.1⟩
Communication dans un congrès hal-01213510v1

Reversible Optical Doping of graphene

Antoine Tiberj , Miguel Rubio-Roy , Matthieu Paillet , Jean-Roch Huntzinger , Périne Landois , et al.
ImagineNano/Nanospain 2013, Apr 2013, Bilbao, Spain
Communication dans un congrès hal-00954962v1

Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped 6H-SiC

Nicolas Camara , Jean-Roch Huntzinger , Gemma Rius , Antoine Tiberj , Narcis Mestres , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 80, pp.125410. ⟨10.1103/PhysRevB.80.125410⟩
Article dans une revue hal-00543847v1

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates

N. Camara , J. R. Huntzinger , Antoine Tiberj , G. Rius , Benoit Jouault , et al.
SILICON CARBIDE AND RELATED MATERIALS 2008, 2008, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, Switzerland. pp.203-206, ⟨10.4028/www.scientific.net/MSF.615-617.203⟩
Communication dans un congrès hal-03037530v1

Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

A. Michon , Antoine Tiberj , S. Vezian , E. Roudon , D. Lefebvre , et al.
Applied Physics Letters, 2014, 104 (7), pp.071912. ⟨10.1063/1.4866285⟩
Article dans une revue hal-01200742v1
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Current status of self-organized epitaxial graphene ribbons on the C face of 6HSiC substrates

Nicolas Camara , Antoine Tiberj , Benoit Jouault , Alessandra Caboni , Bilal Jabakhanji , et al.
Journal of Physics D: Applied Physics, 2010, 43 (37), pp.374011. ⟨10.1088/0022-3727/43/37/374011⟩
Article dans une revue istex hal-00569704v1

Growth protocols and characterization of epitaxial graphene on SiC elaborated in a graphite enclosure

B. Kumar , M. Baraket , M. Paillet , Jean-Roch Huntzinger , Antoine Tiberj , et al.
Physica E: Low-dimensional Systems and Nanostructures, 2016, 75, pp.7 - 14. ⟨10.1016/j.physe.2015.07.022⟩
Article dans une revue hal-01614018v1

Raman Imaging in Semiconductor Physics: Applications to Microelectronic Materials and Devices

Antoine Tiberj , Jean Camassel
Raman Imaging Techniques and Applications, Springer Berlin Heidelberg, pp.ISBN: 978-3-642-28251-5, 2012, ⟨10.1007/978-3-642-28252-2⟩
Chapitre d'ouvrage hal-00803592v1