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Reversible Optical Doping of graphene
Antoine Tiberj
,
Miguel Rubio-Roy
,
Matthieu Paillet
,
Jean-Roch Huntzinger
,
Périne Landois
,
et al.
GDR-I GNT 2013, Apr 2013, Guidel-Plages, Lorient, France
Communication dans un congrès
hal-00813854v1
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Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC
Antoine Tiberj
,
Nicolas Camara
,
Philippe Godignon
,
Jean Camassel
Article dans une revue
hal-00666152v1
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Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN/GaN heterostructures
P. Lorenzini
,
Z. Bougrioua
,
Antoine Tiberj
,
R. Tauk
,
M. Azize
,
et al.
Article dans une revue
hal-00543864v1
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Strain effects in device processing of silicon-on-insulator materials
Jean Camassel
,
Antoine Tiberj
11th International Conference on Solid Films and Surfaces (ICSFE-11), Jul 2002, MARSEILLE (FRANCE), France. pp.742-748
Communication dans un congrès
hal-00543872v1
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Process-induced strain in silicon-on-insulator materials
Antoine Tiberj
,
B. Fraisse
,
Caroline Blanc
,
Sylvie Contreras
,
Jean Camassel
Conference on Extended Defects in Semiconductors (EDS 2002), Jun 2002, BOLOGNA (ITALY), France. pp.13411-13416
Communication dans un congrès
hal-00543870v1
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Very large monolayer graphene ribbons grown on SiC
Nicolas Camara
,
G. Rius
,
Jean Roch Huntzinger
,
Antoine Tiberj
,
N. Mestres
,
et al.
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy
Communication dans un congrès
hal-00390794v1
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Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC
Marc Portail
,
A. Michon
,
S. Vézian
,
D. Lefebvre
,
S. Chenot
,
et al.
Article dans une revue
istex
hal-00803559v1
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Genèse, contenu et perspectives d'un module expérimental d'éducation à la transition écologique à la Faculté des Sciences de l'université de Montpellier.
Olivier Arnould
,
Sandrine Bardet
,
Jean-Louis Bantignies
,
Adeline Barnaud
,
Ilham Bentaleb
,
et al.
Enseigner les Transitions Ecologiques et Sociales dans le Supérieur, Jul 2023, Paris, France. 2023
Poster de conférence
hal-04204671v1
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Extended Defects in SiC: Selective Etching and Raman Study
J L Weyher
,
Antoine Tiberj
,
G. Nowak
,
J C Culbertson
,
J A Freitas
Article dans une revue
hal-04214705v1
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Analysis of the gallium gradient in Cu(In1-xGax)Se-2 absorbers by X-ray diffraction
C. Iatosti
,
Matthieu Moret
,
Antoine Tiberj
,
Olivier Briot
Article dans une revue
hal-03175976v1
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Differences Between Graphene Grown On Si-face And C-face
Nicolas Camara
,
A. Caboni
,
Jean-Roch Huntzinger
,
Antoine Tiberj
,
N. Mestres
,
et al.
13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.581-584
Communication dans un congrès
hal-00543832v1
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AFM and Raman Studies of Graphene Exfoliated on SiC
Antoine Tiberj
,
Marta Martin-Fernandez
,
Nicolas Camara
,
P. Poncharal
,
T. Michel
,
et al.
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.215-218
Communication dans un congrès
hal-00411935v1
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Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
J. Eid
,
I.-G. Galben
,
G. Zoulis
,
Teddy Robert
,
D. Chaussende
,
et al.
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48
Communication dans un congrès
hal-00390466v1
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Selective epitaxial growth of graphene on SiC
Nicolas Camara
,
G. Rius
,
Jean-Roch Huntzinger
,
Antoine Tiberj
,
N. Mestres
,
et al.
Article dans une revue
hal-00543852v1
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Raman spectroscopy as a tool to study the doping of graphene
Antoine Tiberj
,
Miguel Rubio-Roy
,
Romain Parret
,
Matthieu Paillet
,
Jean-Roch Huntzinger
,
et al.
Nanospain Conference 2014, Mar 2014, Spain
Communication dans un congrès
hal-00989874v1
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X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD
Adrien Michon
,
Ludovic Largeau
,
Antoine Tiberj
,
Jean Roch Huntzinger
,
Olivia Mauguin
,
et al.
Communication dans un congrès
hal-01617115v1
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Uniformity of Epitaxial Graphene on On-axis and Off-axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping
S. Sonde
,
F. Giannazzo
,
Jean-Roch Huntzinger
,
Antoine Tiberj
,
M. Syvajarvi
,
et al.
Communication dans un congrès
hal-00543841v1
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Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing
Bilal Jabakhanji
,
A. Michon
,
Christophe Consejo
,
Wilfried Desrat
,
M. Portail
,
et al.
Article dans une revue
hal-01200760v1
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Raman spectroscopy of long isolated graphene ribbons grown on the C face of 6H-SiC
Antoine Tiberj
,
Jean-Roch Huntzinger
,
Benoit Jouault
,
Bilal Jabakhanji
,
Jean Camassel
,
et al.
Nanospain Conf 2010, Mar 2010, Malaga, Spain
Communication dans un congrès
hal-00803583v1
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Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates
Nicolas Camara
,
Benoit Jouault
,
Bilal Jabakhanji
,
Alessandra Caboni
,
Antoine Tiberj
,
et al.
Article dans une revue
hal-00666145v1
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Multiscale investigation of graphene layers on 6H-SiC(000-1)
Antoine Tiberj
,
Jean-Roch Huntzinger
,
Jean Camassel
,
Fanny Hiebel
,
Ather Mahmood
,
et al.
Article dans une revue
hal-00666156v1
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Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates
Nicolas Camara
,
Jean-Roch Huntzinger
,
Antoine Tiberj
,
G. Rius
,
Benoit Jouault
,
et al.
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), France. pp.203-206
Communication dans un congrès
hal-00543294v1
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Stress Metrology : The challenge for the next generation of engineered wafers
Antoine Tiberj
,
Vincent Paillard
,
Cécile Aulnette
,
Nicolas Daval
,
Myriam Moreau
,
et al.
MRS Spring Meeting Symposium B: High-Mobility Group-IV Materials and Devices, Apr 2004, San Francisco, United States. pp.B3.1, ⟨10.1557/PROC-809-B3.1⟩
Communication dans un congrès
hal-01213510v1
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Reversible Optical Doping of graphene
Antoine Tiberj
,
Miguel Rubio-Roy
,
Matthieu Paillet
,
Jean-Roch Huntzinger
,
Périne Landois
,
et al.
ImagineNano/Nanospain 2013, Apr 2013, Bilbao, Spain
Communication dans un congrès
hal-00954962v1
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Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped 6H-SiC
Nicolas Camara
,
Jean-Roch Huntzinger
,
Gemma Rius
,
Antoine Tiberj
,
Narcis Mestres
,
et al.
Article dans une revue
hal-00543847v1
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Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates
N. Camara
,
J. R. Huntzinger
,
Antoine Tiberj
,
G. Rius
,
Benoit Jouault
,
et al.
Communication dans un congrès
hal-03037530v1
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Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition
A. Michon
,
Antoine Tiberj
,
S. Vezian
,
E. Roudon
,
D. Lefebvre
,
et al.
Article dans une revue
hal-01200742v1
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Current status of self-organized epitaxial graphene ribbons on the C face of 6HSiC substrates
Nicolas Camara
,
Antoine Tiberj
,
Benoit Jouault
,
Alessandra Caboni
,
Bilal Jabakhanji
,
et al.
Article dans une revue
istex
hal-00569704v1
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Growth protocols and characterization of epitaxial graphene on SiC elaborated in a graphite enclosure
B. Kumar
,
M. Baraket
,
M. Paillet
,
Jean-Roch Huntzinger
,
Antoine Tiberj
,
et al.
Article dans une revue
hal-01614018v1
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Raman Imaging in Semiconductor Physics: Applications to Microelectronic Materials and Devices
Antoine Tiberj
,
Jean Camassel
Chapitre d'ouvrage
hal-00803592v1
|
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