Nombre de documents

41

CV de Antoine Tiberj


Article dans une revue23 documents

  • C. Bouhafs, V. Darakchieva, I. L. Persson, Antoine Tiberj, P. O. A. Persson, et al.. Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1). Journal of Applied Physics, American Institute of Physics, 2015, 117 (8), pp.085701. <10.1063/1.4908216>. <hal-01200762>
  • A. Michon, Antoine Tiberj, S. Vezian, E. Roudon, D. Lefebvre, et al.. Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition. Applied Physics Letters, American Institute of Physics, 2014, 104 (7), pp.071912. <10.1063/1.4866285>. <hal-01200742>
  • Bilal Jabakhanji, A. Michon, Christophe Consejo, Wilfried Desrat, M. Portail, et al.. Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing. Physical Review B : Condensed matter and materials physics, American Physical Society, 2014, 89 (8), pp.085422. <10.1103/PhysRevB.89.085422>. <hal-01200760>
  • B. Jabakhanji, A. Michon, C. Consejo, W. Desrat, M. Portail, et al.. Tuning the transport properties of graphene fi lms grown by CVD on SiC(0001): E ffect of in situ hydrogenation and annealing. Physical Review B : Condensed matter and materials physics, American Physical Society, 2014, 89, pp.085422. <hal-01048640>
  • B. Jabakhanji, A. Michon, C. Consejo, W. Desrat, M. Portail, et al.. Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing. Physical Review B : Condensed matter and materials physics, American Physical Society, 2014, 89, pp.085422. <hal-00975057>
  • Antoine Tiberj, M. Rubio-Roy, Matthieu Paillet, Jean-Roch Huntzinger, Périne Landois, et al.. Reversible optical doping of graphene. Scientific Reports, Nature Publishing Group, 2013, 3, pp.2355. <10.1038/srep02355>. <hal-00863905>
  • Romain Parret, Matthieu Paillet, Jean-Roch Huntzinger, Denise Nakabayashi, Thierry Michel, et al.. In Situ Raman Probing of Graphene over a Broad Doping Range upon Rubidium Vapor Exposure. ACS Nano, American Chemical Society, 2013, 7 (1), pp.165. <10.1021/nn3048878>. <hal-00785831>
  • Marc Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, et al.. Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC. Journal of Crystal Growth, Elsevier, 2012, 349 (1), pp.27-35. <10.1016/j.jcrysgro.2012.04.004>. <hal-00803559>
  • Nicolas Camara, Benoit Jouault, A. Caboni, Antoine Tiberj, P. Godignon, et al.. Epitaxial Graphene Growth on alpha-SiC: Probing the Effect of Surface Orientation. NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2011, 3, pp.49-54. <10.1166/nnl.2011.1118>. <hal-00666151>
  • Antoine Tiberj, Nicolas Camara, Philippe Godignon, Jean Camassel. Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC. Nanoscale Research Letters, SpringerOpen, 2011, 6, pp.478. <10.1186/1556-276X-6-478>. <hal-00666152>
  • Nicolas Camara, Benoit Jouault, Bilal Jabakhanji, Alessandra Caboni, Antoine Tiberj, et al.. Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates. Nanoscale Research Letters, SpringerOpen, 2011, 6, pp.141. <10.1186/1556-276X-6-141>. <hal-00666145>
  • Antoine Tiberj, Jean-Roch Huntzinger, Jean Camassel, Fanny Hiebel, Ather Mahmood, et al.. Multiscale investigation of graphene layers on 6H-SiC(000-1). Nanoscale Research Letters, SpringerOpen, 2011, 6, pp.171. <10.1186/1556-276X-6-171>. <hal-00666156>
  • Nicolas Camara, Antoine Tiberj, Benoit Jouault, Alessandra Caboni, Bilal Jabakhanji, et al.. Current status of self-organized epitaxial graphene ribbons on the C face of 6H-SiC substrates. Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43, pp.374011. <10.1088/0022-3727/43/37/374011>. <hal-00543289>
  • Nicolas Camara, Antoine Tiberj, Benoit Jouault, Alessandra Caboni, Bilal Jabakhanji, et al.. Current status of self-organized epitaxial graphene ribbons on the C face of 6HSiC substrates. Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (37), pp.374011. <10.1088/0022-3727/43/37/374011>. <hal-00569704>
  • Benoit Jouault, B. Jabakhanji, Nicolas Camara, Wilfried Desrat, Antoine Tiberj, et al.. Probing the electrical anisotropy of multilayer graphene on the Si face of 6H-SiC. Physical Review B : Condensed matter and materials physics, American Physical Society, 2010, 82, pp.085438. <10.1103/PhysRevB.82.085438>. <hal-00543285>
  • S. Sonde, F. Giannazzo, V. Raineri, R. Yakimova, Jean-Roch Huntzinger, et al.. Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy. Physical Review B : Condensed matter and materials physics, American Physical Society, 2009, 80, pp.241406. <10.1103/PhysRevB.80.241406>. <hal-00543845>
  • Nicolas Camara, Jean-Roch Huntzinger, Gemma Rius, Antoine Tiberj, Narcis Mestres, et al.. Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped 6H-SiC. Physical Review B : Condensed matter and materials physics, American Physical Society, 2009, 80, pp.125410. <10.1103/PhysRevB.80.125410>. <hal-00543847>
  • Nicolas Camara, G. Rius, Jean-Roch Huntzinger, Antoine Tiberj, N. Mestres, et al.. Selective epitaxial growth of graphene on SiC. Applied Physics Letters, American Institute of Physics, 2008, 93, pp.123503. <10.1063/1.2988645>. <hal-00543852>
  • Nicolas Camara, G. Rius, Jean-Roch Huntzinger, Antoine Tiberj, Laurence Magaud, et al.. Early stage formation of graphene on the C face of 6H-SiC. Applied Physics Letters, American Institute of Physics, 2008, 93, pp.263102. <10.1063/1.3056655>. <hal-00543850>
  • R. Tauk, J. Lusakowski, W. Knap, A. Tiberj, Z. Bougrioua, et al.. Low electron mobility of field-effect transistor determined by modulated magnetoresistance. Journal of Applied Physics, American Institute of Physics, 2007, 102 (10), pp.103701.1. <hal-00389540>
  • M. Sakowicz, R. Tauk, J. Lusakowski, Antoine Tiberj, Wojciech Knap, et al.. Low temperature electron mobility and concentration under the gate of AlGaN/GaN field effect transistors. Journal of Applied Physics, American Institute of Physics, 2006, 100, pp.113726. <10.1063/1.2353786>. <hal-00543860>
  • F. Teppe, M. Orlov, A.E. Fatimy, A. Tiberj, W. Knap, et al.. Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer ingaas transistors. Applied Physics Letters, American Institute of Physics, 2006, 89 (22), pp.222109.1-222109.3. <hal-00329604>
  • P. Lorenzini, Z. Bougrioua, Antoine Tiberj, R. Tauk, M. Azize, et al.. Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN/GaN heterostructures. Applied Physics Letters, American Institute of Physics, 2005, 87, pp.232107. <10.1063/1.2140880>. <hal-00543864>

Communication dans un congrès17 documents

  • Antoine Tiberj, Miguel Rubio-Roy, Matthieu Paillet, Jean-Roch Huntzinger, Perine Landois, et al.. Reversible optical doping of graphene. Graphene 2014, May 2014, Toulouse, France. <hal-00989884>
  • Antoine Tiberj, Miguel Rubio-Roy, Romain Parret, Matthieu Paillet, Jean-Roch Huntzinger, et al.. Raman spectroscopy as a tool to study the doping of graphene. Nanospain Conference 2014, Mar 2014, Spain. <hal-00989874>
  • Antoine Tiberj, Miguel Rubio-Roy, Matthieu Paillet, Jean-Roch Huntzinger, Périne Landois, et al.. Reversible Optical Doping of graphene. ImagineNano/Nanospain 2013, Apr 2013, Bilbao, Spain. <hal-00954962>
  • Antoine Tiberj, Miguel Rubio-Roy, Matthieu Paillet, Jean-Roch Huntzinger, Périne Landois, et al.. Reversible Optical Doping of graphene. GDR-I GNT 2013, Apr 2013, Guidel-Plages, Lorient, France. <hal-00813854>
  • Jean-Louis Sauvajol, Matthieu Paillet, Antoine Tiberj, Jean-Roch Huntzinger, Romain Parret, et al.. Changes induced by doping on the Raman spectrum of monolayer and bilayer graphene. Advances and Applications in Carbon Related nanomaterials: From pure to doping including heteroatom, Sep 2013, Castelldefels, Spain. <hal-00867474>
  • Antoine Tiberj, Jean-Roch Huntzinger, Nicolas Camara, Philipe Godignon, Jean Camassel. Micro-Raman and micro-transmission studies of Graphene on 6H-SiC. Epigraphic Workshop on the Science and Applications of Epitaxial Graphene on SiC, Dec 2012, Catania, Italy. <hal-00803575>
  • Antoine Tiberj. Micro-Raman imaging techniques for microelectronic materials and devices. EMRS Fall Meeting Symposium D Multidimensional electrical and chemical characterization, Sep 2011, Warsaw, Poland. <hal-00803576>
  • Antoine Tiberj, Jean-Roch Huntzinger, Benoit Jouault, Bilal Jabakhanji, Jean Camassel, et al.. Raman spectroscopy of long isolated graphene ribbons grown on the C face of 6H-SiC. Nanospain Conf 2010, Mar 2010, Malaga, Spain. <hal-00803583>
  • Nicolas Camara, A. Caboni, Jean-Roch Huntzinger, Antoine Tiberj, N. Mestres, et al.. Differences Between Graphene Grown On Si-face And C-face. 13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND, 645-648, pp.581-584, 2010. <hal-00543832>
  • S. Sonde, F. Giannazzo, Jean-Roch Huntzinger, Antoine Tiberj, M. Syvajarvi, et al.. Uniformity of Epitaxial Graphene on On-axis and Off-axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping. 13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND, 645-648, pp.607-610, 2010. <hal-00543841>
  • Nicolas Camara, G. Rius, Jean Roch Huntzinger, Antoine Tiberj, N. Mestres, et al.. Very large monolayer graphene ribbons grown on SiC. International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy. <hal-00390794>
  • Jean Camassel, Jean Roch Huntzinger, Antoine Tiberj, M. Syväjärvi, Rositza Yakimova, et al.. Micro-Raman investigation of few graphene layers grown on 6H-SiC. International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, catane, Italy. <hal-00390799>
  • Nicolas Camara, Jean-Roch Huntzinger, Antoine Tiberj, G. Rius, Benoit Jouault, et al.. Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), France. TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND, 615-617, pp.203-206, 2009. <hal-00543294>
  • Antoine Tiberj, Marta Martin-Fernandez, Nicolas Camara, P. Poncharal, T. Michel, et al.. AFM and Raman Studies of Graphene Exfoliated on SiC. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND, 615-617, pp.215-218, 2009. <hal-00411935>
  • J. Eid, I.-G. Galben, G. Zoulis, Teddy Robert, D. Chaussende, et al.. Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND, 615-617, pp.45-48, 2009. <hal-00390466>
  • Antoine Tiberj, B. Fraisse, Caroline Blanc, Sylvie Contreras, Jean Camassel. Process-induced strain in silicon-on-insulator materials. Conference on Extended Defects in Semiconductors (EDS 2002), Jun 2002, BOLOGNA (ITALY), France. 14, pp.13411-13416, 2002. <hal-00543870>
  • Jean Camassel, Antoine Tiberj. Strain effects in device processing of silicon-on-insulator materials. 11th International Conference on Solid Films and Surfaces (ICSFE-11), Jul 2002, MARSEILLE (FRANCE), France. 212, pp.742-748, 2003. <hal-00543872>

Chapitre d'ouvrage1 document

  • Antoine Tiberj, Jean Camassel. Raman Imaging in Semiconductor Physics: Applications to Microelectronic Materials and Devices. Raman Imaging Techniques and Applications, Springer Berlin Heidelberg, pp.ISBN: 978-3-642-28251-5, 2012, <10.1007/978-3-642-28252-2>. <hal-00803592>