Nombre de documents

126

Antoine Létoublon, Associate professor at INSA-Rennes, FOTON OHM Team


Specialist in X-ray scattering on epitaxial thin films. Antiphase boundaries and Microtwins quantitative measurements in III-V on Si materials. X-ray labsetup and synchrotron radiation...


Article dans une revue40 documents

  • Pierre Guillemé, M. Vallet, J. Stodolna, A. Ponchet, Charles Cornet, et al.. Antiphase domain tailoring for combination of modal and 4¯ -quasi-phase matching in gallium phosphide microdisks. Optics Express, Optical Society of America, 2016, 24 (13), pp.14608. <10.1364/OE.24.014608>. <hal-01396654>
  • Jacky Even, Serge Paofai, Philippe Bourges, Antoine Létoublon, Stéphane Cordier, et al.. Carrier scattering processes and low energy phonon spectroscopy in hybrid perovskites crystals. SPIE Proceedings Series, 2016, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, 9743, pp.97430M. <http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2504346>. <10.1117/12.2213623>. <hal-01291680>
  • Samy Almosni, P. Rale, C. Cornet, Mathieu Perrin, L. Lombez, et al.. Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells. Solar Energy Materials and Solar Cells, Elsevier, 2016, 147, pp.53-60. <10.1016/j.solmat.2015.11.036>. <hal-01272057>
  • Antoine Létoublon, Serge Paofai, Benoit Ruffle, Philippe Bourges, Bernard Hehlen, et al.. Elastic Constants, Optical Phonons and Molecular Relaxations in the High Temperature Plastic Phase of the CH3NH3PbBr3 Hybrid Perovskite. Journal of Physical Chemistry Letters, American Chemical Society, 2016, 7, pp.3776-3784. <10.1021/acs.jpclett.6b01709>. <hal-01362483>
  • Olivier Durand, Samy Almosni, Charles Cornet, Antoine Létoublon, Christophe Levallois, et al.. Multijunction photovoltaics: integrating III–V semiconductor heterostructures on silicon. Spie Newsroom, Spie, 2015, Solar & Alternative Energy, pp.x113168. <10.1117/2.1201503.005793>. <hal-01166437>
  • Yanping Wang, J. Stodolna, M. Bahri, J. Kuyyalil, Thanh Tra Nguyen, et al.. Abrupt GaP/Si hetero-interface using bistepped Si buffer. Applied Physics Letters, American Institute of Physics, 2015, 107 (19), pp.191603. <10.1063/1.4935494>. <hal-01228809>
  • Yanping Wang, Antoine Létoublon, Thanh Tra Nguyen, Mounib Bahri, Ludovic Largeau, et al.. Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setup. Journal of Applied Crystallography, International Union of Crystallography, 2015, 48 (3), pp.702-710. <10.1107/S1600576715009954>. <hal-01157811>
  • Olivier Durand, Samy Almosni, Yanping Wang, C. Cornet, A. Létoublon, et al.. Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics. Energy Harvesting and Systems, DE GRUYTER, 2014, 1 (3-4), pp.147-156. <10.1515/ehs-2014-0008>. <hal-01166477>
  • Thomas Quinci, Jithesh Kuyyalil, Thanh Tra Nguyen, Yanping Wang, Samy Almosni, et al.. Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster. Journal of Crystal Growth, Elsevier, 2013, 380, pp.157-162. <10.1016/j.jcrysgro.2013.05.022>. <hal-00918659>
  • Samy Almosni, Cédric Robert, Thanh Tra Nguyen, Charles Cornet, Antoine Létoublon, et al.. Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells. Journal of Applied Physics, American Institute of Physics, 2013, 113 (12), pp.123509. <10.1063/1.4798363>. <hal-00918663>
  • Jithesh Kuyyalil, Thanh Tra Nguyen, Thomas Quinci, Samy Almosni, Antoine Létoublon, et al.. Nitrogen-phosphorus competition in the molecular beam epitaxy of GaPN. Journal of Crystal Growth, Elsevier, 2013, 377, pp.17-21. <10.1016/j.jcrysgro.2013.04.052>. <hal-00918658>
  • Weiming Guo, Alexandre Bondi, Charles Cornet, Antoine Létoublon, Olivier Durand, et al.. Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering. Applied Surface Science, Elsevier, 2012, 258, pp.2808. <10.1016/j.apsusc.2011.10.139>. <hal-00654301>
  • Charles Cornet, Thanh Tra Nguyen, Thomas Quinci, Samy Almosni, Tony Rohel, et al.. Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys. Applied Physics Letters, American Institute of Physics, 2012, 101 (25), pp.251906. <10.1063/1.4772785>. <hal-00788403>
  • Thanh Tra Nguyen, Cédric Robert, Weiming Guo, Antoine Létoublon, Charles Cornet, et al.. Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon. Journal of Applied Physics, American Institute of Physics, 2012, 112 (5), pp.053521. <10.1063/1.4751024>. <hal-00726722>
  • Salman Salman, Hervé Folliot, Julie Le Pouliquen, Nicolas Chevalier, Tony Rohel, et al.. Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate. Materials Science and Engineering: B, Elsevier, 2012, 177 (11), pp.882-886. <10.1016/j.mseb.2012.03.053>. <hal-00698574>
  • Cédric Robert, Alexandre Bondi, Thanh Tra Nguyen, Jacky Even, Charles Cornet, et al.. Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen. Applied Physics Letters, American Institute of Physics, 2011, 98, pp.251110. <10.1063/1.3601857>. <hal-00654272>
  • A. Letoublon, Weiming Guo, C. Cornet, Alexandre Boulle, M. Veron, et al.. X-ray study of antiphase domains and their stability in MBE grown GaP on Si.. Journal of Crystal Growth, Elsevier, 2011, Proceedings of the 16th International Conference on Molecular Beam Epitaxy (ICMBE), 323 (1), pp.409-412. <10.1016/j.jcrysgro.2010.10.137>. <hal-00692315>
  • Olivier Durand, Antoine Létoublon, D. J. Rogers, F. Hosseini Teherani. Interpretation of the two-components observed in high resolution X-ray diffraction ω scan peaks for mosaic ZnO thin fi lms grown on c-sapphire substrates using pulsed laser deposition. Thin Solid Films, Elsevier, 2011, 519, pp.6369. <10.1016/j.tsf.2011.04.036>. <hal-00662642>
  • Wei Lu, Tony Rohel, Nicolas Bertru, Hervé Folliot, Cyril Paranthoën, et al.. Achievement of InSb Quantum Dots on InP(100) Substrates. Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2010, 49, pp.060210-1. <10.1143/JJAP.49.060210>. <hal-00489868>
  • J.-M. Ulloa, Paul Koenraad, Maximilien Bonnet-Eymard, Antoine Letoublon, Nicolas Bertru. Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots. Journal of Applied Physics, American Institute of Physics, 2010, 107, pp.74309. <10.1063/1.3361036>. <hal-00484943>
  • P. Caroff, N. Bertru, W. Lu, G. Elias, O. Dehaese, et al.. Critical thickness for InAs quantum dot formation on (311)B InP substrates. Journal of Crystal Growth, Elsevier, 2009, 311, pp.2626-2629. <10.1016/j.jcrysgro.2009.02.048>. <hal-00471905>
  • Georges Elias, Antoine Letoublon, Rozenn Piron, Ibrahim Alghoraibi, Abdulhadi Nakkar, et al.. Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 μm. Japanese Journal of Applied Physics / Japanese Journal of Applied Physics Part 1, 2009, 48 (7), pp.70204. <10.1143/JJAP.48.070204>. <hal-00485726>
  • Alexandre Bondi, Weiming Guo, Laurent Pedesseau, Soline Boyer-Richard, Hervé Folliot, et al.. Light emitting diodes on silicon substrates: preliminary results. physica status solidi (c), Wiley, 2009, 6 (10), pp.2212-2216. <10.1002/PSSC.200881728>. <hal-00665750>
  • Frédérique Leroy, Gilles Renaud, Antoine Letoublon, Stanislas Rohart, Yann Girard, et al.. Kink ordering and organized growth of Co clusters on a stepped Au(111) surface: A combined grazing-incidence x-ray scattering and STM study. Physical Review B : Condensed matter and materials physics, American Physical Society, 2008, 77, pp.045430. <10.1103/PhysRevB.77.045430>. <hal-00247400>
  • Frédéric Leroy, Gilles Renaud, Antoine Létoublon, Rémi Lazzari. Growth of Co on Au(111) studied by multiwavelength anomalous grazing-incidence small-angle x-ray scattering: From ordered nanostructures to percolated thin films and nanopillars. Physical Review B : Condensed matter and materials physics, American Physical Society, 2008, 77, pp.235429. <10.1103/PhysRevB.77.235429>. <hal-00433207>
  • F. Leroy, G. Renaud, A. Letoublon, S. Rohart, Y. Girard, et al.. Kink ordering and organized growth of Co clusters on a stepped Au(111) surface: A combined grazing-incidence x-ray scattering and STM study. Physical Review B : Condensed matter and materials physics, American Physical Society, 2008, 77, pp.045430. <hal-00303815>
  • J.-M. Ulloa, Paul Koenraad, Antoine Letoublon, Nicolas Bertru, C. Celebi, et al.. Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots. Applied Physics Letters, American Institute of Physics, 2007, 101, pp.081707. <10.1063/1.2722738>. <hal-00485820>
  • J.-M. Ulloa, Paul Koenraad, E. Gapihan, Antoine Letoublon, Nicolas Bertru. Double capping of molecular beam epitaxy grown InAs/InP quantum dots studied by cross-sectional scanning tunneling microscopy. Applied Physics Letters, American Institute of Physics, 2007, 91 (7), pp.073106. <10.1063/1.2771063>. <hal-00485907>
  • Christine Revenant-Brizard, Frédéric Leroy, Gilles Renaud, Rémi Lazzari, Antoine Létoublon, et al.. Structural and morphological evolution of Co on faceted Pt/W(111) surface upon thermal annealing. Surface Science, Elsevier, 2007, 601, pp.3431. <10.1016/j.susc.2007.06.026>. <hal-00433442>
  • S. Francoual, F. Livet, M. De Boissieu, F. Yakhou, F. Bley, et al.. Dynamics of long-wavelength phason fluctuations in the i-Al-Pd-Mn quasicrystal.. Philosophical Magazine, Taylor & Francis, 2006, 86 (6-8), pp.1029-1035. <hal-00139775>
  • Charles Cornet, Andrei Schliwa, Jacky Even, François Doré, C. Celebi, et al.. Electronic and optical properties of InAs/InP quantum dots on InP(100) and InP„311...B substrates: Theory and experiment. Physical Review B : Condensed matter and materials physics, American Physical Society, 2006, 74, pp.035312. <10.1103/PhysRevB.74.035312>. <hal-00491703>
  • Ibrahim Alghoraibi, Tony Rohel, Nicolas Bertru, Alain Le Corre, Antoine Letoublon, et al.. Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited. Journal of Crystal Growth, Elsevier, 2006, 293, pp.263. <10.1016/j.jcrysgro.2006.05.046>. <hal-00485589>
  • S. Francoal, F. Livet, Boissieu M. De, F. Yakhou, F. Bley, et al.. Dynamics of long-wavelength phason fluctuations in the i-Al-Pd-Mn quasicrystal. Philosophical Magazine, Taylor & Francis, 2006, 86, pp.1029. <hal-00017183>
  • Sonia Francoual, Frédéric Livet, Marc De Boissieu, Flora Yakhou, Françoise Bley, et al.. Dynamics of long-wavelength phason fluctuations in the i-Al-Pd-Mn quasicrystal. Philosophical Magazine, Taylor & Francis, 2006, 86 (06-08), pp.1029-1035. <10.1080/14786430500263496>. <hal-00513584>
  • Frédéric Leroy, Gilles Renaud, Antoine Létoublon, Rémi Lazzari, Christine Mottet, et al.. Self-Organized Growth of Nanoparticles on a Surface Patterned by a Buried Dislocation Network. Physical Review Letters, American Physical Society, 2005, 95, pp.185501. <10.1103/PhysRevLett.95.185501>. <hal-00433447>
  • A. Letoublon, V. Favre-Nicolin, H. Renevier, M.G. Proletti, C. Monat, et al.. Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence. Physica B: Condensed Matter, Elsevier, 2005, 357, pp.11-15. <hal-00154906>
  • Antoine Létoublon, V. Favre-Nicolin, H. Renevier, Proietti M.G., C. Monat, et al.. Strain size and composition of InAs quantum stics enmbed in InP by means of grazing incidence X-ray anomalous diffraction. Physical Review Letters, American Physical Society, 2004, 92, pp.186101. <10.1103/PhysRevLett.92.186101>. <hal-00085995>
  • A. Letoublon, V. Favre-Nicolin, H. Renevier, M.G. Proietti, C. Monat, et al.. Strain, size and composition of InAs quantum wires, embedded in InP, by means of grazing incidence diffraction X-ray anomalous diffraction. Physical Review Letters, American Physical Society, 2004, 92, pp.186101/1-4. <hal-00141284>
  • H. Renevier, S. Grenier, S. Arnaud, J. F. Berar, B. Caillot, et al.. Diffraction Anomalous Fine Structure spectroscopy at the beamline BM2 at the European Synchrotron Radiation Facility. Journal of Synchrotron Radiation, International Union of Crystallography, 2003, 10, pp.435-444. <hal-00122641>
  • S. Grenier, A. Letoublon, M.G. Proeitti, H. Renevier, L. Gonzalez, et al.. Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2003, 200, pp.24-33. <hal-00146613>

Communication dans un congrès81 documents

  • Antoine Létoublon, Serge Paofai, Benoit Ruffle, Bernard Hehlen, Claude Ecolivet, et al.. Raman and Brillouin scattering from single crystals of CH3NH3PbBr3 around the cubic to tetragonal phase transition. 2èmes Journées Perovskites Hybrides (JPH 2016), May 2016, Rennes, France. <hal-01337984>
  • Mickael Da Silva, Samy Almosni, C. Cornet, Antoine Létoublon, Christophe Levallois, et al.. GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell. SPIE Photonics West - OPTO 2015, Feb 2015, San Francisco, United States. SPIE, Proc. SPIE, 9358, pp.93580H, 2015, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV. <10.1117/12.2081376>. <hal-01166431>
  • Pierre Guillemé, Mounib Bahri, Julie Le Pouliquen, D. Gachet, Tony Rohel, et al.. Investigation of the optical properties of GaP microdisks for optical functions integrated on silicon. Compound semiconductor week 2015, Jun 2015, Santa-Barbara, United States. 2015. <hal-01147496>
  • Mickael Da Silva, Shijian Wang, Samy Almosni, Charles Cornet, Antoine Létoublon, et al.. Numerical and experimental ongoing on III-V/Si high-efficiency tandem solar cell. European Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland. <hal-01203374>
  • Olivier Durand, Samy Almosni, Pierre Râle, J. Rodière, Yanping Wang, et al.. Advanced concepts of III-V-based Solar Cells heterostructures: towards III-V/Si CPV on Si substrates and hot-carrier solar cells on InP substrates. European Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France. 2014. <hal-01115019>
  • Olivier Durand, Yanping Wang, Samy Almosni, Mounib Bahri, Julien Stodolna, et al.. Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon. 6th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2014, Bucharest, Romania. <hal-01114912>
  • Charles Cornet, Pierre Guillemé, Jean-Philippe Gauthier, Cédric Robert, Julien Stodolna, et al.. Intégration pseudomorphique dans la filière GaP/Si pour les applications lasers sur puce. journées thématiques du GDR Ondes GT2, Nov 2014, Orsay, France. <hal-01114901>
  • Yanping Wang, Thanh Tra Nguyen, Antoine Létoublon, Charles Cornet, Nicolas Bertru, et al.. Analyse quantitative par diffraction des rayons X des défauts plans dans GaP/SI pour la photonique sur Si. Colloque annuel du GDR CNRS Pulse, Oct 2014, Toulouse, France. 2014. <hal-01137337>
  • Yanping Wang, Antoine Létoublon, Thanh Tra Nguyen, Julien Stodolna, Nicolas Bertru, et al.. Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for III-V photonics platform on silicon. 12th Biennal Conference on High-Resolution X-Ray Diffraction and Imaging, Sep 2014, Villard de Lans, France. 2014. <hal-01115004>
  • Yanping Wang, Julien Stodolna, Thanh Tra Nguyen, Antoine Létoublon, Jithesh Kuyyalil, et al.. Abrupt heterointerface and low defect density in GaP/Si nanolayers. Compound Semiconductor Week 2014, May 2014, Montpellier, France. 2014. <hal-01115278>
  • Yanping Wang, Julien Stodolna, Thanh Tra Nguyen, Antoine Létoublon, Jithesh Kuyyalil, et al.. Low cristalline defect density in GaP/Si nanolayers. European Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France. 2014. <hal-01115024>
  • Olivier Durand, Samy Almosni, Yanping Wang, Charles Cornet, Antoine Létoublon, et al.. Epitaxie cohérente de composés GaP et GaAsPN à azote dilué sur substrats de Si pour l’élaboration de cellules PV tandem III-V/Si. Matériaux 2014, Nov 2014, Montpellier, France. 2014. <hal-01115312>
  • Catherine Bougerol, Joël Eymery, Charles Cornet, Antoine Létoublon, Christophe Durand. HR-TEM study of GaN-GaP type II interfaces. 18th Microscopy of Semiconducting Materials MSMXVIII, Apr 2013, Oxford, United Kingdom. <hal-00918664>
  • Julien Stodolna, F. Demangeot, Anne Ponchet, Thanh Tra Nguyen, Antoine Létoublon, et al.. Crystalline defects in GaP layers grown on Si (001). euro-MBE conference 2013, Mar 2013, Levi, Finland. <hal-00918665>
  • Eric Tea, Charles Cornet, Antoine Létoublon, J. Vidal, Laurent Pedesseau, et al.. Ab initio investigation of defect nucleation at III-V/Si heterointerface for tandem solar cells applications. European Materials Research Society meeting E-MRS 2013, May 2013, Strasbourg, France. <hal-00918729>
  • Jithesh Kuyyalil, Thanh Tra Nguyen, Thomas Quinci, Charles Cornet, Antoine Létoublon, et al.. Growth of GaP on biatomic Si steps using a UHVCVD-MBE cluster. euro-MBE conference, Mar 2013, Levi, Finland. <hal-00918666>
  • Olivier Durand, Samy Almosni, Cédric Robert, Thanh Tra Nguyen, Yanping Wang, et al.. Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates : toward the III-V/Si Concentrated Photovoltaics. International Symposium on Inorganic and Environmental Materials, Oct 2013, Rennes, France. <hal-00918754>
  • Antoine Létoublon, Thanh Tra Nguyen, Yanping Wang, Samy Almosni, Charles Cornet, et al.. Analyse quantitative de la perfection cristalline de nanocouches épitaxiales GaP/Si. Xème colloque rayons X et matière, Nov 2013, Nantes, France. <hal-00918790>
  • Charles Cornet, Cédric Robert, Samy Almosni, Thanh Tra Nguyen, Thomas Quinci, et al.. GaAsPN compounds for Si photonics. International Workshop "Silicon & Photonics", Jun 2013, Rennes, France. <hal-00918743>
  • Charles Cornet, Cédric Robert, Thanh Tra Nguyen, Yanping Wang, Samy Almosni, et al.. Intégration optique par croissance directe de nanostructures III-V sur silicium. 14èmes Journées Nano, Micro et Optoélectronique (JNMO), May 2013, Evian, France. <hal-00918745>
  • Charles Cornet, Thanh Tra Nguyen, Thomas Quinci, Samy Almosni, Jithesh Kuyyalil, et al.. Enhanced incorporation of nitrogen on atomic step edges adsorption sites in diluted nitrides alloys. euro-MBE conference, Mar 2013, Levi, Finland. <hal-00918668>
  • Yanping Wang, Thanh Tra Nguyen, Antoine Létoublon, Charles Cornet, Nicolas Bertru, et al.. Analyse quantitative des micromacles dans des nanocouches épitaxiales GaP/Si pour la photonique sur silicium. Xème colloque rayons X et matière, Nov 2013, Nantes, France. <hal-00918791>
  • Julien Stodolna, F. Demangeot, Anne Ponchet, Nicolas Bertru, Olivier Durand, et al.. Etude par TEM et DRX des défauts cristallins dans des couches épitaxiées par MBE de GaP sur Silicium (001). Colloque annuel du GDR CNRS Pulse, Jul 2013, Aix-en-Provence, France. <hal-00918748>
  • Anne Ponchet, Julien Stodolna, Charles Cornet, Antoine Létoublon, Thanh Tra Nguyen, et al.. Origin and observations of extended defects in III-V epilayers on Si. International Workshop "Silicon & Photonics", Jun 2013, Rennes, France. <hal-00918738>
  • Samy Almosni, Charles Cornet, Thomas Quinci, Thanh Tra Nguyen, Jithesh Kuyyalil, et al.. UHVCVD-MBE growth for tandem solar cells. 4th PhotoVoltaic Technical Conference (PVTC 2013), May 2013, Aix-en-Provence, France. <hal-00918732>
  • Thomas Quinci, Renaud Varache, Yanping Wang, Charles Cornet, Antoine Létoublon, et al.. New concept of photovoltaic heterostructure GaP/c-Si : AFORS-HET simulation and first pseudomorphic approach. Journées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France. <hal-00918767>
  • Charles Cornet, Tony Rohel, Olivier Dehaese, Nicolas Chevalier, Antoine Létoublon, et al.. Développement d'un cluster de croissance UHVCVD-MBE pour l'intégration pseudomorphique III-V/Si. Colloque annuel du GDR CNRS Pulse, Jul 2013, Aix-en-Provence, France. <hal-00918749>
  • Olivier Durand, Thanh Tra Nguyen, Yanping Wang, Antoine Létoublon, Charles Cornet, et al.. Advanced X-ray analyses on epitaxially-grown thin films for optoelectronic applications. 15th International Conference of Physical Chemistry - ROMPHYSCHEM-15, Sep 2013, Bucharest, Romania. <hal-00918793>
  • Samy Almosni, Cédric Robert, Charles Cornet, Thanh Tra Nguyen, Yanping Wang, et al.. Optimisation des propriétés structurale de l'interface GaP/Si et des propriétés électroniques de cellules solaires GaAsPN/GaP pour la fabrication de cellule tandem. Journées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France. <hal-00918758>
  • Samy Almosni, Charles Cornet, Thomas Quinci, Thanh Tra Nguyen, Jithesh Kuyyalil, et al.. UHVCVD-MBE growth cluster for III-N-V/Si solar cells. Compound semiconductors week, ISCS, 2013, May 2013, Kobe, Japan. <hal-00918735>
  • Cédric Robert, Charles Cornet, Olivier Durand, K. Pereira da Silva, Pascal Turban, et al.. gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs). European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France. <hal-00918730>
  • Olivier Durand, Cédric Robert, Thanh Tra Nguyen, Samy Almosni, Thomas Quinci, et al.. Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications. Manijeh Razeghi, Eric Tournié, Gail J. Brown. Photonics West 2013, Feb 2013, San Francisco (CA), United States. SPIE (ISBN: 9780819494009), 8631, pp.863126, 2013, <10.1117/12.2012670>. <hal-00842763>
  • Olivier Durand, Samy Almosni, Cédric Robert, Thanh Tra Nguyen, Charles Cornet, et al.. Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cells. Journées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France. 2012. <hal-00788544>
  • Samy Almosni, Pierre Râle, Cédric Robert, Thanh Tra Nguyen, Charles Cornet, et al.. Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells. Journées nationales du photovoltaïque (JNPV 2012), 2012, Chantilly, France. <hal-00788478>
  • Thanh Tra Nguyen, Cédric Robert, Antoine Létoublon, Charles Cornet, Thomas Quinci, et al.. Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers. European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. Elsevier (ISSN : 0040-6090, ESSN : 0040-6090), Thin Solid Films, 541, pp.36-40, 2013, Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III. <10.1016/j.tsf.2012.11.116>. <hal-00788396>
  • Samy Almosni, Cédric Robert, Charles Cornet, Christophe Levallois, Thomas Quinci, et al.. Potentiality of GaAsPN and InGaPN for photovoltaic applications. 3rd PhotoVoltaic Technical Conference (PVTC 2012), Jun 2012, Aix-en-Provence, France. <hal-00726855>
  • Samy Almosni, Cédric Robert, Thanh Tra Nguyen, Charles Cornet, Antoine Létoublon, et al.. InGaPN and GaAsPN layers for tandem solar cells on silicon. European materials research society international conference (EMRS), 2012, Strasbourg, France. <hal-00726850>
  • Thanh Tra Nguyen, Cédric Robert, Charles Cornet, Weiming Guo, Antoine Létoublon, et al.. Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si. Photonics west 2012, Jan 2012, San Fransisco, United States. SPIE, 8268, pp.82681H, 2012, <10.1117/12.910279>. <hal-00654337>
  • Cédric Robert, Thanh Tra Nguyen, Samy Almosni, Thomas Quinci, Mathieu Perrin, et al.. Dilute nitride GaNAsP for photonic applications on silicon. International Symposium on nitrides (ISNT), 2012, saint-Malo, France. <hal-00726885>
  • Yu Zhao, Nicolas Bertru, Hervé Folliot, Mathieu Perrin, Soline Boyer-Richard, et al.. Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayers. International Conference on Superlattices, Nanostructures and Nanodevices, Jul 2012, Dresden, Germany. <hal-00809031>
  • Thomas Quinci, Jithesh Kuyyalil, Thanh Tra Nguyen, Charles Cornet, Antoine Létoublon, et al.. Growth of III-V GaP on biatomic Si steps using a UHVCVD-MBE cluster. Journées nationales du photovoltaïque 2012, 2012, Chantilly, France. <hal-00788460>
  • Thanh Tra Nguyen, Cédric Robert, Charles Cornet, Weiming Guo, Antoine Létoublon, et al.. coherent integration of photonics on silicon through the growth of GaP/Si. technical meeting of Sandie european network of excellence, 2012, Berlin, Germany. <hal-00788526>
  • Cédric Robert, Charles Cornet, Thanh Tra Nguyen, Mathieu Perrin, Antoine Létoublon, et al.. Développement d'un laser sur silicium dans l'approche pseudomorphique. Journées nationales de l'optique guidée, 2012, Lyon, France. <hal-00788434>
  • Thanh Tra Nguyen, Cédric Robert, Emmanuel Giudicelli, Antoine Létoublon, Charles Cornet, et al.. Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates. 17th International Conference on Molecular Beam Epitaxy (MBE 2012), Sep 2012, Nara, Japan. Elsevier (ISSN : 0022-0248), Journal of Crystal Growth, 378, pp.25-28, 2013, The 17th International Conference on Molecular Beam Epitaxy. <10.1016/j.jcrysgro.2012.11.046>. <hal-00788399>
  • Samy Almosni, Cédric Robert, Thomas Quinci, Thanh Tra Nguyen, Charles Cornet, et al.. Evaluation of InGaP(N) and GaAsP(N) materials lattice-matched to Si for multi-junction solar cells. international conference on MBE, 2012, Japan. 2012. <hal-00726772>
  • Alexandre Bondi, Charles Cornet, Soline Richard, Thanh Tra Nguyen, Antoine Létoublon, et al.. Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy. European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. Elsevier (ISSN : 0040-6090, ESSN : 0040-6090), Thin Solid Films, 541, pp.72-75, 2013, Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III. <10.1016/j.tsf.2012.11.132>. <hal-00788308>
  • Cédric Robert, Thanh Tra Nguyen, Mathieu Perrin, Charles Cornet, Antoine Létoublon, et al.. Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon application. European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. Elsevier (ISSN : 0040-6090, ESSN : 0040-6090), Thin Solid Films, 541, pp.87-91, 2013, Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III. <10.1016/j.tsf.2012.10.134>. <hal-00918657>
  • Olivier Durand, Antoine Létoublon, D. J. Rogers, F. Hosseini Teherani, Charles Cornet, et al.. Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-merit. Photonics West, Jan 2011, San Fransisco, United States. 7940, pp.79400L, 2011, <10.1117/12.877661>. <hal-00654279>
  • Olivier Durand, Antoine Létoublon, D. J. Rogers, F. Hosseini Teherani, Charles Cornet, et al.. Interpretation of the two-components observed in high resolution X-ray diffraction omega-scan peaks from mosaic thin films: case of both PLD-grown ZnO on c-sapphire substrate and MBE-grown GaP on silicon substrate. 3rd International Workshop "Current trends and advanced ellipsometric and XRD techniques for the characterization of nanostructured materials", Sep 2011, Bucharest, Romania. <hal-00726686>
  • Weiming Guo, Thanh Tra Nguyen, Antoine Létoublon, G. Elias, Charles Cornet, et al.. Structural characterisation of GaP/Si nanolayers. European Materials Research Society 2011, May 2011, Strasbourg, France. <hal-00654330>
  • Alexandre Bondi, Charles Cornet, Weiming Guo, Olivier Dehaese, Nicolas Chevalier, et al.. MBE growth of (GaAsPN/GaPN)/GaP quantum wells light emitting diode. euro-MBE 2011, Mar 2011, Alpe d'Huez, France. <hal-00654313>
  • Weiming Guo, G. Elias, Antoine Létoublon, Charles Cornet, A. Ponchet, et al.. structural characterization of MBE grown GaP/Si nanolayers. euro-MBE, Mar 2011, Alpe d'Huez, France. <hal-00654309>
  • Charles Cornet, Cédric Robert, Thanh Tra Nguyen, Weiming Guo, Alexandre Bondi, et al.. Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon. Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. IEEE Xplore Digital Library, pp.1, 2011, Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials (CSW/IPRM), 2011. <http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5978352>. <hal-00654285>
  • Weiming Guo, Thanh Tra Nguyen, G. Elias, Antoine Létoublon, Charles Cornet, et al.. Structural charaterisation of GaP/Si nanolayers. Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. IEEE Xplore Digital Library, pp.1-4, 2011, Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials (CSW/IPRM), 2011. <http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5978357>. <hal-00654292>
  • Charles Cornet, Antoine Létoublon, Weiming Guo, Alexandre Bondi, Soline Richard, et al.. Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur silicium. Séminaire PONANT 2010, Jul 2010, Rennes, France. ponant2010.foton.cnrs.fr, pp.9-11, 2010, Séminaire PONANT 2010 - recueil des communications. <http://ponant2010.foton.cnrs.fr/>. <hal-00504506>
  • Antoine Létoublon, Weiming Guo, Charles Cornet, Alexandre Boulle, M. Veron, et al.. X-ray study of antiphase domains and their stability in MBE grown GaP on Si. 16th International Conference on Molecular Beam Epitaxy (ICMBE 2010), Aug 2010, Berlin, Germany. Elsevier (ISSN : 0022-0248), Journal of Crystal Growth, 323 (1), pp.409-412, 2011, Proceedings of the 16th International Conference on Molecular Beam Epitaxy (ICMBE). <10.1016/j.jcrysgro.2010.10.137>. <hal-00504596>
  • Charles Cornet, Antoine Létoublon, Julien Lapeyre, Cyril Paranthoen, Christophe Levallois, et al.. caractérisation de semi-conducteurs III-V nanostructurés par microscopie à force atomique. Journées de la microscopie champ proche Bretagne, Jun 2010, Rennes, France. pp.1, 2010. <hal-00504500>
  • Georges Elias, Charles Cornet, Philippe Caroff, Christophe Levallois, Antoine Létoublon, et al.. Self-organized growth of InAs quantum dots on InP substrate emitting at 1.55-μm. Second French Research Organizations - Tohoku University Joint Workshop on Frontier Materials, Nov 2009, Sendai, Japan. p-23, 2009. <hal-00491459>
  • Georges Elias, Antoine Letoublon, Rozenn Piron, Ibrahim Alghoraibi, Karine Tavernier, et al.. Improvement of 1.55 µm InAs QD laser using vicinal (001)InP substrate. IPRM, Indium Phosphide & Related Materials, May 2009, Newportbeach, United States. IEE, pp.41 - 44, 2009, <10.1109/ICIPRM.2009.5012422>. <hal-00485799>
  • Weiming Guo, Antoine Letoublon, Charles Cornet, Tony Rohel, Nicolas Chevalier, et al.. Heterogeneous growth and characterisation of III-V material on Si (001) substrate for photonics applications. journées de la Société Française de métallurgie et matériaux (SF2M) 2009, Jun 2009, Rennes, France. pp.W. Guo, 2009. <hal-00486672>
  • Weiming Guo, Charles Cornet, Antoine Létoublon, Tony Rohel, Nicolas Chevalier, et al.. Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on Silicon. EMRS, Jun 2009, Strasbourg, France. pp.1, 2009. <hal-00491771>
  • Wei Lu, Ibrahim Alghoraibi, Georges Elias, Abdulhadi Nakkar, Antoine Létoublon, et al.. Transition fils boites dans le système InAs/InP (100). Journées de la Société Française de métallurgie et matériaux (SF2M), Jun 2009, Rennes, France. pp.W. Lu, 2009. <hal-00486673>
  • Georges Elias, Nicolas Bertru, Alain Le Corre, Antoine Letoublon, Ibrahim Alghoraibi, et al.. Epitaxie des boites quantiques hautes performances InAs/InGaAsP/InP(100) pour des applications laser. Journée nanosciences de bretagne (JNB2),, Jun 2008, Nantes, France. <hal-00486169>
  • Weiming Guo, Alexandre Bondi, Hervé Folliot, Charles Cornet, Antoine Létoublon, et al.. Croissance par MBE de Boites quantiques InP sur GaP/Si. journées nanoscience de Bretagne, Jun 2008, Nantes, France. pp.1, 2008. <hal-00491778>
  • Christophe Labbé, Abdulhadi Nakkar, François Doré, Hervé Folliot, Antoine Létoublon, et al.. Effect of lateral coupling on the carrier redistribution in InAs/InP(311)B high dots surface density. International Workshop on Semiconductor Quantum Dot Devices and Applications, Jul 2008, rennes, France. pp.1, 2008. <hal-00491786>
  • Weiming Guo, Antoine Létoublon, Alexandre Bondi, Charles Cornet, Jacky Even, et al.. Growth and characterization of single phase GaP on Si(001). Colloque de l'Association Française de Cristallographie 2008, Jul 2008, Rennes, France. pp.W. Guo, 2008. <hal-00486678>
  • Antoine Létoublon, C. Manivel, Weiming Guo, Wei Lu, Tony Rohel, et al.. Epifanix: a software tool for automated analysis of X-ray diffraction scans on epitaxial layers. Journées de l'association française de cristallographie AFC 2008, Jul 2008, Rennes, France. pp.A. Letoublon, 2008. <hal-00486681>
  • Georges Elias, Antoine Létoublon, Nicolas Bertru, Alain Le Corre, Ibrahim Alghoraibi, et al.. Self-organized growth of InAs quantum dots on InP(001). SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.G. Elias, 2008. <hal-00486675>
  • Weiming Guo, Alexandre Bondi, Bassem Alsahwa, Charles Cornet, Antoine Létoublon, et al.. Toward a light-emitter on Si: Growth of InAs and InP nanostructure on GaP substrate. (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1, 2008. <hal-00491776>
  • Weiming Guo, Alexandre Bondi, Charles Cornet, Hervé Folliot, Antoine Létoublon, et al.. First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE. 9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. 6 (10), pp.2207, 2009, <10.1002/pssc.200881722>. <hal-00491426>
  • Wei Lu, Antoine Létoublon, Nicolas Bertru, Hervé Folliot, Alain Le Corre, et al.. InAs quantum dots grown on GaAsSb buffer layer lattice matched on InP. 2nd SANDiE Workshop on Characterization and modelling of self-assembled semiconductor nanostructures, Dec 2007, Paris, France. pp.W. Lu, 2007. <hal-00486709>
  • Antoine Létoublon, Philippe Caroff, Nicolas Bertru, Olivier Dehaese, Tony Rohel, et al.. Study of InAs/InP(311)B stacked quantum dots for laser emission at 1.55 µm. 14th European Molecular Beam Epitaxy Workshop, Mar 2007, Sierra Nevada, Spain. pp.A. Letoublon, 2007. <hal-00486711>
  • J.-M. Ulloa, Paul Koenraad, E. Gapihan, Antoine Létoublon, Nicolas Bertru, et al.. Atomic scale structural characterization of long wavelength InAs/InP quantum dots and wires. LWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications, Jul 2007, Rennes, France. pp.J.-M. Ulloa, 2007. <hal-00486715>
  • Charles Cornet, Olivier Dehaese, Laurent Pedesseau, Ibrahim Alghoraibi, Tony Rohel, et al.. Stransky-Krastanow Gas Source MBE growth and optical properties of InAs/GaP quantum dots. euro-MBE conference, Mar 2007, Sierra nevada, Granada, France. pp.1, 2007. <hal-00491810>
  • Georges Elias, Antoine Létoublon, Philippe Caroff, Ibrahim Alghoraibi, Nicolas Bertru, et al.. Study of InAs/InP(311)B stacked quantum dots for laser emission at 1.55 µm. LWQD, International SANDIE Workshop on Long Wave Length Quantum Dots : Growth and Application, Jul 2007, Rennes, France. pp.G. Elias, 2007. <hal-00486707>
  • Antoine Létoublon, Philippe Caroff, Nicolas Bertru, Tony Rohel, Alain Le Corre, et al.. Boîtes quantiques InAs/InP(113) pour l'émission à 1.55 µm : contrôle de la croissance et caractérisation Structurale. 11ème JNMO (Journées Nano-Micro Electronique et Optoélectronique ), Apr 2006, Aussois, France. <hal-00486720>
  • P. Offermans, J.-M. Ulloa, C. Celebi, Richard Notzel, Paul Koenraad, et al.. Atomic scale analysis of intermixing, segregation and decompostion during self assembly of nanostructures. 4th international conference on semiconductor quantum dots, May 2006, Paris, France. <hal-00486661>
  • A. Letoublon, V. Favre-Nicolin, H. Renevier, M.G. Proietti, C. Monat, et al.. Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence. 2004, American Physical Society, pp.11-15, 2004. <hal-00140720>
  • A. Letoublon, H. Renevier, M.G. Proietti, C. Priester, M.L. Gonzalez, et al.. Grazing incidence diffraction anomalous fine structure : a tool for investigating strain distribution and interdiffusion in InAs/InP quantum wires. 2003, Elsevier, pp.541-542, 2003. <hal-00149938>
  • S. Grenier, A. Letoublon, M.G. Proietti, H. Renevier, L. Gonzalez, et al.. Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures. 2002, European Material Research Society, Strasbourg, France, pp.24-33, 2002. <hal-00149685>
  • A. Letoublon, M. Proietti, C. Priester, H. Renevier, C. Delerue. Study of InAs/InP using grazing incidence diffraction anomalous fine structure. Ecole Prédoctorale sur la Physique Mésoscopique, 2001, Les Houches, France. 2001. <hal-00152576>

Poster5 documents

  • Jean-Philippe Gauthier, Cédric Robert, Samy Almosni, Charles Cornet, Yoan Léger, et al.. Carrier injection in GaP-based laser waveguides and dilute nitrides gain medium. Euro-MBE 2015, Mar 2015, Canazei, Italy. 2015. <hal-01147468>
  • Samy Almosni, Charles Cornet, Antoine Létoublon, Nicolas Bertru, Alain Le Corre, et al.. Lattice-matched GaAsPN/GaP single junction solar cell for high-efficiency tandem solar cells on silicon. Euro-MBE 2015, Mar 2015, Canazei, Italy. 2015. <hal-01147439>
  • Jean-Philippe Gauthier, Cédric Robert, Samy Almosni, Charles Cornet, Yoan Léger, et al.. Electrical injection in GaP-based laser waveguides and active areas. 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. IEEE, Indium Phosphide and Related Materials (IPRM 2014), 26th International Conference on, pp.P23, 2014, <http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6880545>. <10.1109/ICIPRM.2014.6880545>. <hal-01114889>
  • Samy Almosni, Cédric Robert, Charles Cornet, Thanh Tra Nguyen, Yanping Wang, et al.. Development of GaAsPN alloy for its integration in III-V/Si tandem solar cell. Workshop on above 25% efficiency solar cells via low cost approaches, Jul 2014, Palaiseau, France. <hal-01115014>
  • Fethallah Taleb, Christophe Levallois, Cyril Paranthoen, Nicolas Chevalier, Olivier De Sagazan, et al.. Substrate bonding using electroplated copper through silicon vias for VCSEL fabrication. 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. IEEE, Indium Phosphide and Related Materials Proceedings (IPRM 2014), 26th International Conference on, pp.P21, 2014, <10.1109/ICIPRM.2014.6880543>. <hal-01112963>