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Advances in quantum cascade lasers in the InAs/AlSb material system

 A. N. Baranov , P. Laffaille , M. Bahriz , J.-C. Moreno
SPIE Photonics West 2012, 2012, San Francisco, United States
Communication dans un congrès hal-01861119v1

Recent progress in InAs-based quantum cascade lasers

 A. N. Baranov , R. Teissier , M. Bahriz , P. Laffaille
Laser Optics XV, 2012, St. Petersburg, Russia
Communication dans un congrès hal-01861125v1

Nouveau laser moyen infra-rouge à super-réseaux InAs/GaSb pour une émission entre 3 et 4 µm

 A. Gassenq , L. Cerutti , A. N. Baranov , E. Tournié
12èmes Journées Nano et Micro-électronique et Optoélectronique, 2008, Oléron, France
Communication dans un congrès hal-01826580v1

Electroluminescence properties of a whispering-gallery-mode laser with coupled disk cavities

 A. N. Imenkov , E. A. Grebenshchikova , V. V. Sherstnev , A. A. Leonidov , N. D. Il’inskaya , et al.
Fizika i tekhnika poluprovodnicov / Semiconductors, 2014, 48 (10), pp.1399 - 1403. ⟨10.1134/S1063782614100121⟩
Article dans une revue hal-01623748v1

High temperature operation of far infrared (λ ≈20 µm) InAs/AlSb quantum cascade lasers with dielectric waveguide

 M. Bahriz , G. Lollia , A. N. Baranov , R. Teissier
Optics Express, 2015, 23 (2), ⟨10.1364/OE.23.001523⟩
Article dans une revue hal-01626278v1

Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 μm)

 A. N. Imenkov , V. V. Sherstnev , I. V. Kovalev , N. D. Il’inskaya , O. Yu. Serebrennikova , et al.
Fizika i tekhnika poluprovodnicov / Semiconductors, 2013, 47 (6), pp.831 - 834. ⟨10.1134/S1063782613060109⟩
Article dans une revue istex hal-01621424v1

Lasers antimoniures et applications à la spectroscopie des gaz

 A. Vicet , Y. Rouillard , L. Cerutti , R. Teissier , A. N. Baranov , et al.
JNMO, 2013, Evian, France
Communication dans un congrès hal-01796970v1
Image document

Long Wavelength (λ > 17 µm) Distributed Feedback Quantum Cascade Lasers Operating in a Continuous Wave at Room Temperature

 Hoang Nguyen Van , Zeineb Loghmari , Hadrien Philip , Michaël Bahriz , Alexei Baranov , et al.
Photonics, 2019, 6 (1), pp.31. ⟨10.3390/photonics6010031⟩
Article dans une revue hal-02375047v1

Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 µm

 A. Vicet , J.-C. Nicolas , F. Genty , Y. Rouillard , E.M. Skouri , et al.
Mid-IR Optoelectronics: Materials and Devices (MIOMD), 1999, Aachen, Germany
Communication dans un congrès hal-01793950v1

GaSb-based lasers for gas monitoring

 C. Alibert , A. Vicet , Y. Rouillard , Serge Gaillard , A. Ouvrard , et al.
Optoelectronic Materials & Processing LEOS 2002, 2002, Glasgow, United Kingdom. ⟨10.1109/LEOS.2002.1159425⟩
Communication dans un congrès hal-01793915v1

Efficient GaInSbAs/GaSb type II quantum well room temperature cw lasers

 Dmitri Yarekha , J. -L. Delor , G. Glastre , Y. Rouillard , E. M. Skouri , et al.
3rd International Conference on Mid-infrared Optoelectronics Materials and Devices (MIOMD), 1999, Aachen, Germany
Communication dans un congrès hal-01798958v1

MIR whispering gallery mode lasers

 J.V. Alexeenko , A.P. Astakhova , N.S. Averkiev , A.N. Baranov , G. Boissier , et al.
MIOMD IX, 2008, Freiburg, Germany
Communication dans un congrès hal-01785787v1

Mid-infrared radiation sources based on coupled disk cavities

 E. Grebenshchikova , V. V. Sherstnev , M. I. Larchenkov , O. Yu. Serebrennikova , N. D. Il’inskaya , et al.
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2012, 38 (4), pp.304 - 306. ⟨10.1134/S1063785012040062⟩
Article dans une revue istex hal-01620384v1

Structural and optical properties of InSb quantum dots for mid-IR applications

 V. Tasco , N. Deguffroy , A. N. Baranov , E. Tournié , B. Satpati , et al.
physica status solidi (b), 2006, 243 (15), pp.3959-3962. ⟨10.1002/pssb.200671512⟩
Article dans une revue istex hal-00328071v1

Cycle de conception d’un laser à semi-conducteur pour la détection de gaz

 A. Gassenq , L. Cerutti , A. N. Baranov , E. Tournié
La Revue de l'électricité et de l'électronique, 2009, n° 6/7, pp. 23 - 26
Article dans une revue hal-01828893v1

Tunability of antimonide-based laser diodes and experimental evaluation of thermal resistance

 A. Vicet , Dmitri Yarekha , A. Ouvrard , R. Teissier , C. Alibert , et al.
IEE Proceedings Optoelectronics, 2003, 150 (4), pp.310 - 313. ⟨10.1049/ip-opt:20030674⟩
Article dans une revue hal-00327150v1

Single mode interband cascade lasers for petrochemical process monitoring

 J. A. M. Fordyce , Daniel A Díaz-Thomas , T Piwonski , A. N. Baranov , L O'Faolain , et al.
15th Mid-Infrared Optoelectronic Materials and Devices (MIOMD-XV), Sep 2021, Guidford (on-line), United Kingdom
Communication dans un congrès hal-03377270v1

High power GaInAsSb/AlGaAsSb quantum well laser diodes emitting at 2.28 µm

 A. Salhi , Y. Rouillard , A. Pérona , P. Grech , F. Chevrier , et al.
5th international workshop on laser physics and its applications, 2002, Tunis, Tunisia
Communication dans un congrès hal-01798887v1

Mid-IR lasers sources monolithically integrated on Si substrates

 Eric Tournié , Marta Rio Calvo , Laura Monge-Bartolome , Zeineb Loghmari , Daniel Andres Diaz Thomas , et al.
SPIE Photonex & Vacuum Expo Digital Forum, Emerging Applications in Silicon Photonics, SPIE, Oct 2020, on line, United Kingdom
Communication dans un congrès hal-03184754v1

Strain relaxation mechanism in the MBE grown InSb/GaSb material system

 B. Satpati , E. Luna , A. Trampert , N. Deguffroy , V. Tasco , et al.
International Symposium on Compound Semiconductors 2008 (ISCS2008), 2008, Rust, Germany
Communication dans un congrès hal-01826523v1

Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular-beam-epitaxy

 E. Luna , B. Satpati , B.H. Hong , S. I. Rybchenko , Jean-Baptiste Rodriguez , et al.
15th European Workshop on Molecular-Beam Epitaxy (Euro-MBE 15), 2009, Zakopane, Poland
Communication dans un congrès hal-01827641v1

Sub-micron quantum cascadetransistors

 H. Nguen Van , J.-C. Moreno , A. N. Baranov , M. Zaknoune , R. Teissier
36th International Conference on Infrared, Millimeter and Terahertz Waves IRMMW-THz, 2011, Houston, United States
Communication dans un congrès hal-01858362v1

Continuous wave operation of InAs-based quantum cascade lasers above 20 μm

 Zeineb Loghmari , Alexei Baranov , Hoang Nguyen-Van , Michaël Bahriz , R. Teissier , et al.
PIERS, Aug 2018, Toyama, Japan
Communication dans un congrès hal-01863766v1

Strain in antimonide/arsenide multilayers for middle-IR systems

 J. Nicolai , Christophe Gatel , Bénédicte Warot-Fonrose , A. N. Baranov , R. Teissier , et al.
Euro-MBE, 2013, Levi, Finland
Communication dans un congrès hal-01875551v1

Edge and vertical surface emitting lasers around 2.0-2.5µm and their applications

 C. Alibert , A. N. Baranov , F. Genty , A. Joullié , A. Pérona , et al.
Semiconductor light sources for Mid-IR applications, 2000, London, United Kingdom
Communication dans un congrès hal-01798944v1

Antimonide quantum cascade lasers

 A. N. Baranov , D. Barate , R. Teissier , A. Vicet , C. Alibert , et al.
6th International Conference on Mid-Infrared Optoelectronics Materials and Devices (MIOMD), 2004, St Petersburg, Russia
Communication dans un congrès hal-01804855v1
Image document

Radiative quantum efficiency in an InAs/AlSb intersubband transition

 Clement Faugeras , Aaron Wade , Aude Leuliet , Angela Vasanelli , Carlo Sirtori , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74 (11), pp.113303. ⟨10.1103/PhysRevB.74.113303⟩
Article dans une revue hal-00087553v1

High-density, uniform InSb/GaSb quantum dots emitting in the midinfrared region

 V. Tasco , N. Deguffroy , A. N. Baranov , E. Tournié , B. Satpati , et al.
Applied Physics Letters, 2006, 89 (26), pp.263118.1-263118.3. ⟨10.1063/1.2425041⟩
Article dans une revue hal-00328003v1

Antimonides – alternative materials for quantum cascade lasers

 A. N. Baranov , R. Teissier , J. Devenson , O. Cathabard
MIRSENS 2010, 2010, Wroclaw, Poland
Communication dans un congrès hal-01830465v1

Short-wavelength quantum-cascade lasers in the InAs/AlSb material system

 A. N. Baranov , P. Laffaille , R. Teissier , O. Cathabard , J.-C. Moreno , et al.
International Symposium on Compound Semiconductors ISCS 2011, 2011, Berlin, Germany
Communication dans un congrès hal-01831702v1
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