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Experimental observation of whispering gallery modes in sector disk lasers

 A. Monakhov , V. V. Sherstnev , A. P. Astakhova , Yu. P. Yakovlev , G. Boissier , et al.
Applied Physics Letters, 2009, 94 (5), ⟨10.1063/1.3075852⟩
Article dans une revue hal-01617822v1

Antimonides – alternative materials for quantum cascade lasers

 A. N. Baranov , R. Teissier , J. Devenson , O. Cathabard
MIRSENS 2010, 2010, Wroclaw, Poland
Communication dans un congrès hal-01830465v1

Short-wavelength quantum-cascade lasers in the InAs/AlSb material system

 A. N. Baranov , P. Laffaille , R. Teissier , O. Cathabard , J.-C. Moreno , et al.
International Symposium on Compound Semiconductors ISCS 2011, 2011, Berlin, Germany
Communication dans un congrès hal-01831702v1

Negative Differential Conductivity in InAs/AlSb Superlattices

 M. S. Kagan , I. V. Altukhov , A. N. Baranov , N. D. Il'Ynskaya , S. K. Paprotskiy , et al.
Acta Physica Polonica A, 2011, 119 (2), pp.210 - 211. ⟨10.12693/APhysPolA.119.210⟩
Article dans une revue hal-01619177v1

InAs-based quantum cascade lasers

 A. N. Baranov , R. Teissier , M. Bahriz , P. Laffaille , G. Lollia
International Seminar on Opto and Nanoelectronics, 2013, St. Petersburg, Russia
Communication dans un congrès hal-01864235v1
Image document

Optical phonon scattering of cavity polaritons in an electroluminescent device

 Aymeric Delteil , A. Vasanelli , P. Jouy , D. Barat , C. Moreno , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (8), ⟨10.1103/PhysRevB.83.081404⟩
Article dans une revue hal-01619174v1

Fabry-Perot resonator technique for optical loss measurements in semiconductor lasers in mid-infrared range

 D. G. Revin , L. R. Wilson , D. A. Garder , J. W. Cockburn , M. Hopkinson , et al.
Intersubband transitions in quantum wells, 2003, Evolène, Switzerland
Communication dans un congrès hal-01798883v1

Lasers à cascade quantique InAs/AlSb

 R. Teissier , D. Barat , A. Vicet , C. Alibert , Alexei Baranov , et al.
Xème Journées Nationales de Microélectronique et Optoélectronique (JNMO), 2004, La Grande Motte, France
Communication dans un congrès hal-01805188v1

InAs/AlSb quantum cascade lasers emitting near 4.5 µm at room temperature

 D. Barate , R. Teissier , A. Vicet , Alexei Baranov , X. Marcadet , et al.
SIOE 2004, 2004, Cardiff, United Kingdom
Communication dans un congrès hal-01804906v1

Submicrometer process and RF operation of InAs quantum hot-electron transistors

 H. Nguyen Van , J.C. Moreno , A. N. Baranov , R. Teissier , M. Zaknoune
IEEE Electron Device Letters, 2012, 33, pp.797-799. ⟨10.1109/LED.2012.2192409⟩
Article dans une revue hal-00786911v1

Antimonide-based compound semiconductors and devices grown by molecular beam epitaxy

 E. Tournié , L. Cerutti , G. Boissier , Y. Rouillard , A. N. Baranov , et al.
17th Euro-Molecular Beam Epitaxy (Euro-MBE), 2013, Levi, Finland
Communication dans un congrès hal-01797215v1

New diode laser for room temperature TDLAS in the MID-IR

 C. Alibert , A. Vicet , Dmitri Yarekha , A. Pérona , Y. Rouillard , et al.
3rd International Conference on Tunable Diode Laser Spectroscopy (TDLS), 2001, Zermatt, Switzerland
Communication dans un congrès hal-01797372v1

Low-threshold continuous-wave operation of 2.38 µm GaInAsSb/GaSb type-II quantum-well laser diodes

 A. Joullié , Y. Cuminal , A. N. Baranov , D. Bec , J.-C. Nicolas , et al.
IEEE 16th International Semiconductor Laser Conference (ISLC), 1998, Nara, Japan
Communication dans un congrès hal-01794494v1

Novel Sb-based mid-infrared laser structures designed by wave function engineering

 Philippe Christol , P. Bigenwald , A. Joullié , Y. Cuminal , A. N. Baranov , et al.
Mid-Infrared Optoelectronics and Devices, 1998, Prague, Czech Republic
Communication dans un congrès hal-01799459v1

InAs(PSb)-based “W” quantum well laser diodes emitting near 3.3 μm

 Philippe Christol , A. Joullié , E. Skouri , M. Garcia , P. Grech , et al.
Applied Physics Letters, 2000, 76 (18), pp.2499 - 2501. ⟨10.1063/1.126388⟩
Article dans une revue hal-01756591v1

Type II transition in InSb-based nanostructures for midinfrared applications

 R. Intartaglia , G. Rainó , V. Tasco , F. Della Sala , R. Cingolani , et al.
Journal of Applied Physics, 2008, 103 (11), ⟨10.1063/1.2938063⟩
Article dans une revue hal-01617298v1

Far infrared (λ ≈ 20 µm) InAs/AlSb Quantum Cascade Lasers with dielectric waveguide

 G. Lollia , M. Bahriz , Alexei Baranov , D. Chastanet , Azzedine Bousseksou , et al.
International Quantum Cascade Lasers School and Workshop 2014, 2014, Policoro, Italy
Communication dans un congrès hal-01903270v1
Image document

Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µm

 D. A Díaz-Thomas , Oleksandr Stepanenko , Michaël Bahriz , Stéphane Calvez , E. Tournié , et al.
Optics Express, 2019, 27 (22), pp.31425. ⟨10.1364/OE.27.031425⟩
Article dans une revue hal-02345145v1

Quantum cascade lasers grown on silicon

 A. N. Baranov , H. Nguyen-Van , Z. Loghmari , L. Cerutti , J.-B. Rodriguez , et al.
18th Int. Conf. on Laser Optics, 2018, St Petersburg, Russia
Communication dans un congrès hal-02078298v1
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PHASE DIAGRAM OF Na(DxH1-x)3(SeO3)2 SYSTEM vs CONCENTRATION, TEMPERATURE, FIELD AND PRESSURE

 L. Shuvalov , A. Shirokov , N. Ivanov , A. Baranov , L. Kirpichnikova , et al.
Journal de Physique Colloques, 1972, 33 (C2), pp.C2-165-C2-167. ⟨10.1051/jphyscol:1972257⟩
Article dans une revue istex jpa-00214993v1

Cascade lasers epitaxially grown on Silicon substrates

 Jean-Baptiste Rodriguez , Laurent Cerutti , A.N. Baranov , Audrey Gilbert , M Rio-Calvo , et al.
International Quantum Cascade Lasers School and Workshop, Aug 2022, Zurich - Ascona, Switzerland
Communication dans un congrès hal-03771073v1

Quantum efficiency of a 2-level InAs/AlSb quantum cascade structure

 C. Faugeras , A. Leuliet , A. Vasanelli , C. Sirtori , A. Wade , et al.
International Journal of Modern Physics B, 2007, 21 (8-9), pp.1471-1475. ⟨10.1142/S0217979207043038⟩
Article dans une revue hal-00327658v1

MONOLITHIC INTEGRATION OF MID-IR LASERS ON SILICON

 Eric Tournié , Marta Rio Calvo , Laura Monge-Bartolome , Zeineb Loghmari , Roland Teissier , et al.
8th International Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano), Aug 2021, Milano (on line), Italy
Communication dans un congrès hal-03336686v1

Room temperature continuous wave operation of InAs-based quantum cascade lasers at 15 micron

 A. N. Baranov , Michaël Bahriz , Roland Teissier
Optics Express, 2016, 24 (16), pp.18799. ⟨10.1364/OE.24.018799⟩
Article dans une revue hal-01426743v1

Optical Detection and Spatial Modulation of Mid-Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor

 Davide Maria Di Paola , Anton V. Velichko , Mario Bomers , Nilanthy Balakrishnan , Oleg Makarovsky , et al.
Advanced Optical Materials, 2018, 6 (3), pp.1700492. ⟨10.1002/adom.201700492⟩
Article dans une revue hal-01754879v1

Visualisation of lasing modes on mirror of WGM-laser by the AFM method

 P. A. Alekseev , M. S. Dunaevskiy , A. M. Monahov , A. N. Baranov , Pascal Girard , et al.
20th International Symposium, 2012, Nizhny Novgorod, Russia
Communication dans un congrès hal-01863425v1

Trace gas detection with antimonide-based quantum-well diode lasers

 A. Vicet , Dmitri Yarekha , A. Pérona , Y. Rouillard , Sophie Gaillard , et al.
Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy [1994-..], 2002, 58 (11), pp.2405-2412. ⟨10.1016/S1386-1425(02)00055-0⟩
Article dans une revue istex hal-00324037v1

Semiconductor lasers

 Alexei Baranov , Eric Tournié
Woodhead Publishing Limited, 33, 2013, Woodhead Publishing Series in Electronic and Optical Materials, 9780857091215. ⟨10.1533/9780857096401⟩
Ouvrages hal-02342605v1

Antimonide-based optoelectronic devices grown on Si substrates (Conference Presentation)

 Eric Tournié , Laurent Cerutti , Jean-Baptiste Rodriguez , Jean-Philippe Perez , Philippe Christol , et al.
Silicon Photonics XIV, Feb 2019, San Francisco, United States. pp.10923-11
Communication dans un congrès hal-02342612v1

Tunable whispering gallery mode lasers for mid IR

 A. M. Monakhov , A. N. Imenkov , V. V. Sherstnev , E. A. Grebentsikova , Yu. P. Yakovlev , et al.
Mid-Infrared Optoelectronics: Materials and Devices (MIOMD X), 2010, Shanghai, China
Communication dans un congrès hal-01831055v1
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