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247 résultats
Semiconductor lasersWoodhead Publishing Limited, 33, 2013, Woodhead Publishing Series in Electronic and Optical Materials, 9780857091215. ⟨10.1533/9780857096401⟩
Ouvrages
hal-02342605v1
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Antimonide-based optoelectronic devices grown on Si substrates (Conference Presentation)Silicon Photonics XIV, Feb 2019, San Francisco, United States. pp.10923-11
Communication dans un congrès
hal-02342612v1
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Tunable whispering gallery mode lasers for mid IRMid-Infrared Optoelectronics: Materials and Devices (MIOMD X), 2010, Shanghai, China
Communication dans un congrès
hal-01831055v1
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Vertical transport in InAs/AlSb superlattices18th Int. Symposyum “Nanostructures: Physics and Technology”, 2010, St Petersburg, Russia
Communication dans un congrès
hal-01831085v1
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Progress in InAs-based Quantum Cascade LasersPhotonic West SPIE Conference, 2010, San Francisco, United States
Communication dans un congrès
hal-01830463v1
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Edge and vertical surface emitting lasers around 2.0-2.5 m and their applicationsPhilosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2001, 359 (1780), pp.581 - 597. ⟨10.1098/rsta.2000.0744⟩
Article dans une revue
istex
hal-01800009v1
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InAs/AlSb quantum cascade active regionforemission in theTHzrangeITQW 2011, 2011, Badesi, Italy
Communication dans un congrès
hal-01858359v1
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Frequency-tuned semiconductor whispering-gallery-mode laser (λ = 2.35 µm) operating at room temperaturePis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2009, 35 (9), pp.857 - 860. ⟨10.1134/S1063785009090211⟩
Article dans une revue
istex
hal-01618177v1
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Frequency tuning due to nonlinear effects in whispering gallery mode laser based on InAsSb/InAsSbP heterostructurePis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2010, 36 (4), pp.351 - 353. ⟨10.1134/S1063785010040188⟩
Article dans une revue
istex
hal-01618587v1
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InAs/GaSb/InSb short-period superlattice diode lasers emitting near 3.3 µm at room temperatureMIOMD IX, 2008, Freiburg, Germany
Communication dans un congrès
hal-01826454v1
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MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zonesInternational Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada
Communication dans un congrès
hal-01825818v1
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Observation of whispering gallery modes in lasers with cut disk cavitiesPis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2008, 34 (11), pp.941 - 943. ⟨10.1134/S1063785008110126⟩
Article dans une revue
istex
hal-01617384v1
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Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlatticesFizika i tekhnika poluprovodnicov / Semiconductors, 2013, 47 (11), pp.1478 - 1480. ⟨10.1134/S1063782613110080⟩
Article dans une revue
istex
hal-01621259v1
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Mid-IR WGM lasersSPIE Photonics West 2013, 2013, San Francisco, United States
Communication dans un congrès
hal-01864238v1
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Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressurephysica status solidi (b), 2009, 246 (3), pp.512 - 515. ⟨10.1002/pssb.200880501⟩
Article dans une revue
hal-01617826v1
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InAs-based quantum cascade lasers grown on on-axis (001) silicon substrateAPL Photonics, 2020, 5 (4), pp.041302. ⟨10.1063/5.0002376⟩
Article dans une revue
hal-02544106v1
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Terahertz quantum cascade laser with non-resonant extractionAIP Advances, 2019, 9 (5), pp.055214. ⟨10.1063/1.5092855⟩
Article dans une revue
hal-02378711v1
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Edge and surface emitting mid-infrared quantum well lasers for gas analysisMid-Infrared Optoelectronics and Devices, 1998, Prague, Czech Republic
Communication dans un congrès
hal-01799463v1
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Mid-infrared GaSb-InAs-based multiple quantum well lasersOptoelectronics and High-Power Lasers & Applications, 1998, San Jose, United States. ⟨10.1117/12.304451⟩
Communication dans un congrès
hal-01794487v1
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High temperature GaInAsSb/GaAlAsSb quantum well continuous wave lasersConference Digest 2000 Conference on Lasers and Electro-Optics Europe, 2000, Nice, France. ⟨10.1109/CLEOE.2000.909732⟩
Communication dans un congrès
hal-01793969v1
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InAs/AlSb quantum cascade lasers on GaSb and InAsIntersubband transistions in quantum wells, 2003, Evotene, Switzerland
Communication dans un congrès
hal-01804841v1
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Observation of Long Turn-on Delay in Pulsed Quantum Cascade LasersJournal of Lightwave Technology, 2022, 40 (7), pp.2104-2110. ⟨10.1109/JLT.2021.3134837⟩
Article dans une revue
hal-04260054v1
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Sb-based Mid-IR lasers grown by MBE on Silicon(001)21st International Conference on Molecular Beam Epitaxy, Sep 2021, Online, Mexico
Communication dans un congrès
hal-03377236v1
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Investigations on InSb-based quantum dots grown by molecular beam epitaxyphysica status solidi (c), 2007, 4 (5), pp.1743-1746. ⟨10.1002/pssc.200674268⟩
Article dans une revue
istex
hal-00327182v1
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Apertureless SPM method of light detectionSTATE-OF-THE-ART TRENDS OF SCIENTIFIC RESEARCH OF ARTIFICIAL AND NATURAL NANOOBJECTS, STRANN, Apr 2016, St. Petersburg, Russia. ⟨10.1063/1.4954336⟩
Communication dans un congrès
hal-01791161v1
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Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 μmApplied Physics Letters, 2000, 77 (15), pp.2298 - 2300. ⟨10.1063/1.1317537⟩
Article dans une revue
hal-01756481v1
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Epsilon near-zero all-optical terahertz modulatorApplied Physics Letters, 2020, 117 (11), pp.111101. ⟨10.1063/5.0012206⟩
Article dans une revue
hal-03009384v1
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Quantum cascade lasers emitting near 2.6 μmApplied Physics Letters, 2010, 96 (14), ⟨10.1063/1.3385778⟩
Article dans une revue
hal-01618563v1
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Advances in quantum cascade lasers in the InAs/AlSb material systemSPIE Photonics West 2012, 2012, San Francisco, United States
Communication dans un congrès
hal-01861119v1
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Recent progress in InAs-based quantum cascade lasersLaser Optics XV, 2012, St. Petersburg, Russia
Communication dans un congrès
hal-01861125v1
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