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123 résultats
VCSELs fabricated using self-aligned processing42nd Micro and Nano Engineering (MNE), Sep 2016, Vienna, Austria
Communication dans un congrès
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Thermally detected optical absorption and photoluminescence studies of InGaAsN/GaAs quantum wellsIEE Proceedings Optoelectronics, 2004, 151 (5), pp.312. ⟨10.1049/ip-opt:20040929⟩
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Electrical properties of metal/Al 2 O 3 /In 0.53 Ga 0.47 As capacitors grown on InPJournal of Applied Physics, 2018, 123 (16), pp.161534. ⟨10.1063/1.5007920⟩
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Degradation study of InGaAsN PIN solar cell under 1 MeV electron irradiationRADECS 2020, Oct 2020, Virtual, France
Communication dans un congrès
hal-03012157v1
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Analysis of thermally stressed GaAs solar cells for operation in terrestrial hybrid systems18TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-18) AND 13TH WORLD CONFERENCE ON THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY (TPV-13), Apr 2022, Miyazaki, Japan. pp.020004, ⟨10.1063/5.0147287⟩
Communication dans un congrès
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Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structuresSemiconductor Science and Technology, 2018, 33 (11), pp.114013. ⟨10.1088/1361-6641/aae354⟩
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Anisotropy in the wet thermal oxidation of AlGaAs: influence of process parametersOptical Materials Express, 2018, 8 (7), pp.394 - 396. ⟨10.1364/OME.8.001788⟩
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hal-01810561v1
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Growth and properties of GaAsBi thin layers by molecular beam epitaxyInternational Workshop on Bismuth-Containing Semiconductors, Jul 2016, Shanghai, China. 2016
Poster de conférence
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TEM EDS analysis of epitaxially-grown self-assembled indium islandsAIP Advances, 2017, 7 (5), ⟨10.1063/1.4983492⟩
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Resonant Raman scattering in GaAsN: Mixing, localization and band impurity formation of electronic statesPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 67, pp.205325
Article dans une revue
hal-00003590v1
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Modelling of interband transitions in GaAs tunnel diodeSemiconductor Science and Technology, 2016, 31 (6), pp.06LT01. ⟨10.1088/0268-1242/31/6/06LT01⟩
Article dans une revue
hal-01857640v1
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Dopage par modulation d'hétérostructures de semiconducteurs II-VI semimagnétiques en épitaxie par jets moléculairesPhysique [physics]. Université Joseph-Fourier - Grenoble I, 1998. Français. ⟨NNT : ⟩
Thèse
tel-00002701v1
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Controlled Oxidation of III-V Semiconductors for Photonic Devices21st International Conference on Transparent Optical Networks (ICTON 2019), Jul 2019, Angers, France. pp.1-4, ⟨10.1109/ICTON.2019.8840290⟩
Communication dans un congrès
hal-02296303v1
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Oxydation d’AlGaAs: Vers une maitrise de l’anisotropie16eme Journees Nano, Micro et Optoelectronique (JNMO), Jun 2018, Cap Esterel, France. 2018
Poster de conférence
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Influence of chemical process on structural and optical properties of as-grown and thermal annealed GaAsBi alloys8th International Workshop on Bismuth-Containing Semiconductors, Prof. Kirstin Volz, Jul 2017, Marburg, Germany
Communication dans un congrès
hal-01947272v1
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Dilute Bismides for Optoelectronic ApplicationsThe 8th International Workshop on Advanced Materials Science and Nanotechnology (IWAMSN2016), Dr Le Si Dang (IN, France); Prof. Kazuhito Hashimoto (NIMS, Japan); Prof. Nguyen Quang Liem (IMS, Vietnam), Nov 2016, Halong City, Vietnam
Communication dans un congrès
hal-01947444v1
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Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States
Communication dans un congrès
hal-01947411v1
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Spin properties of dilute bismide alloysThe Physics of Optoelectronic Materials and Devices, In the memory of Prof. Naci Balkan, Mar 2017, Colchester, United Kingdom
Communication dans un congrès
hal-01947255v1
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Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.1-2
Communication dans un congrès
hal-02052796v1
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In-situ magnification inferred curvature measurement applied to dilute bismide growth21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès
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Monitoring MBE substrate deoxidation via RHEED image-sequence analysis by deep learningCrystal Growth & Design, 2023, 23 (2), pp.892-898. ⟨10.1021/acs.cgd.2c01132⟩
Article dans une revue
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Notice technique : Spectrométrie des électrons Auger[Rapport Technique] Rapport LAAS n° 17208, LAAS-CNRS. 2017
Rapport
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Bismuth-induced effects on optical, lattice vibrational, and structural properties of bulk GaAsBi alloysNanoscale Research Letters, 2014, 9 (1), pp.119. ⟨10.1186/1556-276X-9-119⟩
Article dans une revue
hal-01946769v1
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Notice Technique : Procédure d'entrée de molybloc dans la chambre d'introduction réacteurs MBE 32 et MBE 2300[Rapport Technique] Rapport LAAS n° 17205, LAAS-CNRS. 2017, 10p
Rapport
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Pseudomorphic and metamorphic (Al)GaAsSb/(Al)InGaAs tunnel junctions for GaAs based Multi-Junction Solar CellsEuropean PV Solar Energy Conference and Exhibition, Sep 2017, Amsterdam, Netherlands
Communication dans un congrès
hal-01617434v1
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Scanning microwave microscopy applied to semiconducting GaAs structuresReview of Scientific Instruments, 2018, 89 (2), pp.023704. ⟨10.1063/1.5015966⟩
Article dans une revue
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Local stress-induced effects on AlGaAs/AlOx oxidation front shapeApplied Physics Letters, 2014, 105 (4), pp.41909 - 41909. ⟨10.1063/1.4892094⟩
Article dans une revue
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Oxide-confined VCSELs fabricated with a simple self-aligned process flowSemiconductor Science and Technology, 2017, 32 (12), pp.125004. ⟨10.1088/1361-6641/aa90ae⟩
Article dans une revue
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29GHz-bandwidth monolithically integrated EAM-VCSELWorkshop VCSEL Day 2019, May 2019, Bruxelles, Belgium
Communication dans un congrès
hal-02391664v1
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AlOx/AlGaAs technology for multi-plane integrated photonic devices2015 17th International Conference on Transparent Optical Networks (ICTON), Jul 2015, Budapest, Hungary. 4p., ⟨10.1109/ICTON.2015.7193701⟩
Communication dans un congrès
hal-01768266v1
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