Nombre de documents

222

CV de Alain Le Corre


Communication dans un congrès167 documents

  • Olivier Durand, Samy Almosni, Mickael Da Silva, Pierre Rale, Alain Le Corre, et al.. Towards the III-V/Si CPV on Si substrates. European Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France. <hal-01403375>
  • Olivier Durand, Yanping Wang, Samy Almosni, Mounib Bahri, Julien Stodolna, et al.. Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon. 6th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2014, Bucharest, Romania. <hal-01114912>
  • Olivier Durand, Samy Almosni, Pierre Râle, J. Rodière, Yanping Wang, et al.. Advanced concepts of III-V-based Solar Cells heterostructures: towards III-V/Si CPV on Si substrates and hot-carrier solar cells on InP substrates. European Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France. 2014. <hal-01115019>
  • Yanping Wang, Julien Stodolna, Thanh Tra Nguyen, Antoine Létoublon, Jithesh Kuyyalil, et al.. Low cristalline defect density in GaP/Si nanolayers. European Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France. 2014. <hal-01115024>
  • Laurent Lombez, Jean Rodière, Jean-Francois Guillemoles, Alain Le Corre, Hervé Folliot, et al.. Accurate measurement of temperature and electrochemical potential of InGaAsPlInP heterostructures: a first indication of hot carriers solar cell operation. 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC 2014), Jun 2014, Denver, United States. <hal-01166777>
  • Jean Rodière, Laurent Lombez, Jean-Francois Guillemoles, Hervé Folliot, Alain Le Corre, et al.. Characterization of InP/InGaAsP-multi-quantum-wells heterostructures for high efficiency solar energy conversion. Compound Semiconductor Week 2014 - 41st International Symposium on Compound Semiconductors (ISCS 2014), May 2014, Montpellier, France. <hal-01166784>
  • Yanping Wang, Julien Stodolna, Thanh Tra Nguyen, Antoine Létoublon, Jithesh Kuyyalil, et al.. Abrupt heterointerface and low defect density in GaP/Si nanolayers. Compound Semiconductor Week 2014, May 2014, Montpellier, France. 2014. <hal-01115278>
  • Olivier Durand, Samy Almosni, Yanping Wang, Charles Cornet, Antoine Létoublon, et al.. Epitaxie cohérente de composés GaP et GaAsPN à azote dilué sur substrats de Si pour l’élaboration de cellules PV tandem III-V/Si. Matériaux 2014, Nov 2014, Montpellier, France. 2014. <hal-01115312>
  • Yanping Wang, Antoine Létoublon, Thanh Tra Nguyen, Julien Stodolna, Nicolas Bertru, et al.. Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for III-V photonics platform on silicon. 12th Biennal Conference on High-Resolution X-Ray Diffraction and Imaging, Sep 2014, Villard de Lans, France. 2014. <hal-01115004>
  • Yanping Wang, Thanh Tra Nguyen, Antoine Létoublon, Charles Cornet, Nicolas Bertru, et al.. Analyse quantitative par diffraction des rayons X des défauts plans dans GaP/SI pour la photonique sur Si. Colloque annuel du GDR CNRS Pulse, Oct 2014, Toulouse, France. 2014. <hal-01137337>
  • Cédric Robert, Charles Cornet, Thanh Tra Nguyen, M. Nestoklon, Katiane Pereira da Silva, et al.. Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots. 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. IEEE, IEEE Xplore Digital Library, pp.Th-B1-2, 2014, Compound Semiconductor Week and 26th International Conference on Indium Phosphide and Related Materials (CSW/IPRM), 2014. <10.1109/ICIPRM.2014.6880555>. <hal-01114877>
  • Fethallah Taleb, Cyril Paranthoën, Christophe Levallois, Jean-Philippe Gauthier, Nicolas Chevalier, et al.. VCSEL à fils quantiques présentant une émission laser de 1647 à 1542 nm. 14èmes Journées Nano, Micro et Optoélectronique, May 2013, Evian, France. <hal-00953001>
  • Kamil Klaime, Rozenn Piron, Frederic Grillot, Madhoussoudhana Dontabactouny, Slimane Loualiche, et al.. Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers. SPIE Photonics West - OPTO 2013, Feb 2013, San Francisco, United States. SPIE, Proc. SPIE, 8634, pp.863407, 2013, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X. <10.1117/12.2005244>. <hal-01167250>
  • Thomas Quinci, Renaud Varache, Yanping Wang, Charles Cornet, Antoine Létoublon, et al.. New concept of photovoltaic heterostructure GaP/c-Si : AFORS-HET simulation and first pseudomorphic approach. Journées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France. <hal-00918767>
  • Charles Cornet, Cédric Robert, Samy Almosni, Thanh Tra Nguyen, Thomas Quinci, et al.. GaAsPN compounds for Si photonics. International Workshop "Silicon & Photonics", Jun 2013, Rennes, France. <hal-00918743>
  • Samy Almosni, Cédric Robert, Charles Cornet, Thanh Tra Nguyen, Yanping Wang, et al.. Optimisation des propriétés structurale de l'interface GaP/Si et des propriétés électroniques de cellules solaires GaAsPN/GaP pour la fabrication de cellule tandem. Journées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France. <hal-00918758>
  • Antoine Létoublon, Thanh Tra Nguyen, Yanping Wang, Samy Almosni, Charles Cornet, et al.. Analyse quantitative de la perfection cristalline de nanocouches épitaxiales GaP/Si. Xème colloque rayons X et matière, Nov 2013, Nantes, France. <hal-00918790>
  • Yanping Wang, Thanh Tra Nguyen, Antoine Létoublon, Charles Cornet, Nicolas Bertru, et al.. Analyse quantitative des micromacles dans des nanocouches épitaxiales GaP/Si pour la photonique sur silicium. Xème colloque rayons X et matière, Nov 2013, Nantes, France. <hal-00918791>
  • Jithesh Kuyyalil, Thanh Tra Nguyen, Thomas Quinci, Charles Cornet, Antoine Létoublon, et al.. Growth of GaP on biatomic Si steps using a UHVCVD-MBE cluster. euro-MBE conference, Mar 2013, Levi, Finland. <hal-00918666>
  • Charles Cornet, Cédric Robert, Thanh Tra Nguyen, Yanping Wang, Samy Almosni, et al.. Intégration optique par croissance directe de nanostructures III-V sur silicium. 14èmes Journées Nano, Micro et Optoélectronique (JNMO), May 2013, Evian, France. <hal-00918745>
  • Charles Cornet, Tony Rohel, Olivier Dehaese, Nicolas Chevalier, Antoine Létoublon, et al.. Développement d'un cluster de croissance UHVCVD-MBE pour l'intégration pseudomorphique III-V/Si. Colloque annuel du GDR CNRS Pulse, Jul 2013, Aix-en-Provence, France. <hal-00918749>
  • Samy Almosni, Charles Cornet, Thomas Quinci, Thanh Tra Nguyen, Jithesh Kuyyalil, et al.. UHVCVD-MBE growth for tandem solar cells. 4th PhotoVoltaic Technical Conference (PVTC 2013), May 2013, Aix-en-Provence, France. <hal-00918732>
  • Samy Almosni, Charles Cornet, Thomas Quinci, Thanh Tra Nguyen, Jithesh Kuyyalil, et al.. UHVCVD-MBE growth cluster for III-N-V/Si solar cells. Compound semiconductors week, ISCS, 2013, May 2013, Kobe, Japan. <hal-00918735>
  • Olivier Durand, Samy Almosni, Cédric Robert, Thanh Tra Nguyen, Yanping Wang, et al.. Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates : toward the III-V/Si Concentrated Photovoltaics. International Symposium on Inorganic and Environmental Materials, Oct 2013, Rennes, France. <hal-00918754>
  • Olivier Durand, Thanh Tra Nguyen, Yanping Wang, Antoine Létoublon, Charles Cornet, et al.. Advanced X-ray analyses on epitaxially-grown thin films for optoelectronic applications. 15th International Conference of Physical Chemistry - ROMPHYSCHEM-15, Sep 2013, Bucharest, Romania. <hal-00918793>
  • Julien Stodolna, F. Demangeot, Anne Ponchet, Nicolas Bertru, Olivier Durand, et al.. Etude par TEM et DRX des défauts cristallins dans des couches épitaxiées par MBE de GaP sur Silicium (001). Colloque annuel du GDR CNRS Pulse, Jul 2013, Aix-en-Provence, France. <hal-00918748>
  • Charles Cornet, Thanh Tra Nguyen, Thomas Quinci, Samy Almosni, Jithesh Kuyyalil, et al.. Enhanced incorporation of nitrogen on atomic step edges adsorption sites in diluted nitrides alloys. euro-MBE conference, Mar 2013, Levi, Finland. <hal-00918668>
  • Cédric Robert, Charles Cornet, Olivier Durand, K. Pereira da Silva, Pascal Turban, et al.. gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs). European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France. <hal-00918730>
  • Charles Cornet, Pascal Turban, Cédric Robert, Sylvain Tricot, Mathieu Perrin, et al.. Boîtes quantiques semi-conductrices : relation entre morphologie, structure électronique et propriétés optiques. Journées Nanosciences et Nanotechnologies du Nord Ouest 2013 (J2NO 2013), Nov 2013, Rennes, France. <hal-00918787>
  • Cédric Robert, Charles Cornet, Pascal Turban, S. Mauger, Thanh Tra Nguyen, et al.. Γ-X competition in (In,Ga)As/GaP quantum dots (QDs) : effect of QD size and Indium composition. euro-MBE conference, Mar 2013, Levi, Finland. <hal-00918669>
  • Cédric Robert, Charles Cornet, K. Pereira da Silva, Pascal Turban, S. Mauger, et al.. Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation. Compound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan. <hal-00918734>
  • Olivier Durand, Cédric Robert, Thanh Tra Nguyen, Samy Almosni, Thomas Quinci, et al.. Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications. Manijeh Razeghi, Eric Tournié, Gail J. Brown. Photonics West 2013, Feb 2013, San Francisco (CA), United States. SPIE (ISBN: 9780819494009), 8631, pp.863126, 2013, <10.1117/12.2012670>. <hal-00842763>
  • Alain Rolland, Laurent Pedesseau, Jacky Even, Samy Almosni, Cédric Robert, et al.. Design of a lattice-matched III-V-N/Si photovoltaic tandem cell monolithically integrated on silicon substrate. 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2013), Aug 2013, Vancouver, Canada. Springer Verlag (ISSN: 0306-8919), Optical and Quantum Electronics, 46 (10), pp.1397-1403, 2014, Special Issue: Numerical Simulation of Optoelectronic Devices NUSOD’13. <10.1007/s11082-014-9909-z>. <hal-00951949>
  • Cyril Paranthoën, Christophe Levallois, Jean-Philippe Gauthier, Fethallah Taleb, Nicolas Chevalier, et al.. 1540 to 1645 nm continuous VCSEL emission based on quantum dashes. 25th International Conference on Indium Phosphide and Related Materials (IPRM), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. <10.1109/ICIPRM.2013.6562594>. <hal-00874600>
  • Fethallah Taleb, Christophe Levallois, Cyril Paranthoën, Jean-Philippe Gauthier, Nicolas Chevalier, et al.. 1.55 μm VCSEL based on InAs quantum-dashes with an emission covering 105 nm wavelength range. Euro VCSEL-DAY 2013, May 2013, Lausanne, Switzerland. <hal-00920834>
  • Kamil Klaime, Rozenn Piron, Cyril Paranthoën, Thomas Batte, Frederic Grillot, et al.. High Frequency Quantum Dots Mode Locked Laser for Telecommunication Applications. European Semiconductor Laser Workshop (ESLW 2012), Sep 2012, Brussels, Belgium. <hal-00806320>
  • Samy Almosni, Cédric Robert, Thomas Quinci, Thanh Tra Nguyen, Charles Cornet, et al.. Evaluation of InGaP(N) and GaAsP(N) materials lattice-matched to Si for multi-junction solar cells. international conference on MBE, 2012, Japan. 2012. <hal-00726772>
  • Cédric Robert, Thanh Tra Nguyen, Mathieu Perrin, Charles Cornet, Antoine Létoublon, et al.. Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon application. European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. Elsevier (ISSN : 0040-6090, ESSN : 0040-6090), Thin Solid Films, 541, pp.87-91, 2013, Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III. <10.1016/j.tsf.2012.10.134>. <hal-00918657>
  • Samy Almosni, Cédric Robert, Thanh Tra Nguyen, Charles Cornet, Antoine Létoublon, et al.. InGaPN and GaAsPN layers for tandem solar cells on silicon. European materials research society international conference (EMRS), 2012, Strasbourg, France. <hal-00726850>
  • Samy Almosni, Cédric Robert, Charles Cornet, Christophe Levallois, Thomas Quinci, et al.. Potentiality of GaAsPN and InGaPN for photovoltaic applications. 3rd PhotoVoltaic Technical Conference (PVTC 2012), Jun 2012, Aix-en-Provence, France. <hal-00726855>
  • Laurent Pedesseau, Jacky Even, Jean-Marc Jancu, Eric Tea, Charles Cornet, et al.. Contribution of DFT code to photovoltaic applications. Journées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France. <hal-00788493>
  • Thomas Quinci, Jithesh Kuyyalil, Thanh Tra Nguyen, Charles Cornet, Antoine Létoublon, et al.. Growth of III-V GaP on biatomic Si steps using a UHVCVD-MBE cluster. Journées nationales du photovoltaïque 2012, 2012, Chantilly, France. <hal-00788460>
  • Samy Almosni, Pierre Râle, Cédric Robert, Thanh Tra Nguyen, Charles Cornet, et al.. Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells. Journées nationales du photovoltaïque (JNPV 2012), 2012, Chantilly, France. <hal-00788478>
  • Olivier Durand, Samy Almosni, Cédric Robert, Thanh Tra Nguyen, Charles Cornet, et al.. Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cells. Journées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France. 2012. <hal-00788544>
  • Alexandre Bondi, Charles Cornet, Soline Richard, Thanh Tra Nguyen, Antoine Létoublon, et al.. Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy. European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. Elsevier (ISSN : 0040-6090, ESSN : 0040-6090), Thin Solid Films, 541, pp.72-75, 2013, Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III. <10.1016/j.tsf.2012.11.132>. <hal-00788308>
  • Thanh Tra Nguyen, Cédric Robert, Antoine Létoublon, Charles Cornet, Thomas Quinci, et al.. Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers. European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. Elsevier (ISSN : 0040-6090, ESSN : 0040-6090), Thin Solid Films, 541, pp.36-40, 2013, Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III. <10.1016/j.tsf.2012.11.116>. <hal-00788396>
  • Cédric Robert, Charles Cornet, Thanh Tra Nguyen, Mathieu Perrin, Antoine Létoublon, et al.. Développement d'un laser sur silicium dans l'approche pseudomorphique. Journées nationales de l'optique guidée, 2012, Lyon, France. <hal-00788434>
  • Charles Cornet, Pascal Turban, Cédric Robert, Thanh Tra Nguyen, Sylvain Tricot, et al.. Unusual C2 symmetry properties of (In,Ga)As/GaP quantum dots morphology. international conference on superlattice, nanostructures and nanodevices (ICSNN), 2012, Dresden, Germany. <hal-00726864>
  • Cédric Robert, Charles Cornet, Pascal Turban, Thanh Tra Nguyen, Sylvain Tricot, et al.. Optical and structural properties of (In,Ga)As/GaP quantum dots : C2 to C2v symmetry transition during the ripening process. international conference on MBE, 2012, Nara, Japan. <hal-00726776>
  • Kamil Klaime, Rozenn Piron, Cyril Paranthoen, Thomas Batte, Frederic Grillot, et al.. 20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate. 24th International Conference on Indium Phosphide and Related Materials (IPRM 2012), Aug 2012, Santa Barbara, United States. IEEE (ISSN :1092-8669, Print ISBN : 978-1-4673-1725-2 ), IEEE Xplore Digital Library, pp.181-184, 2012, International Conference on Indium Phosphide and Related Materials (IPRM), 2012. <10.1109/ICIPRM.2012.6403352>. <hal-00726881>
  • Cosimo Calo, Kamel Merghem, Ricardo Rosales, Anthony Martinez, Abderrahim Ramdane, et al.. Self Pulsation in Quantum Dot lasers operating at 1.55 μm based on (311)B substrates. International Nano-Optoelectronics Workshop 2012, Aug 2012, Berkeley, United States. pp.1, 2012. <hal-00726928>
  • Cédric Robert, Thanh Tra Nguyen, Samy Almosni, Thomas Quinci, Mathieu Perrin, et al.. Dilute nitride GaNAsP for photonic applications on silicon. International Symposium on nitrides (ISNT), 2012, saint-Malo, France. <hal-00726885>
  • Thanh Tra Nguyen, Cédric Robert, Charles Cornet, Weiming Guo, Antoine Létoublon, et al.. coherent integration of photonics on silicon through the growth of GaP/Si. technical meeting of Sandie european network of excellence, 2012, Berlin, Germany. <hal-00788526>
  • Thanh Tra Nguyen, Cédric Robert, Emmanuel Giudicelli, Antoine Létoublon, Charles Cornet, et al.. Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates. 17th International Conference on Molecular Beam Epitaxy (MBE 2012), Sep 2012, Nara, Japan. Elsevier (ISSN : 0022-0248), Journal of Crystal Growth, 378, pp.25-28, 2013, The 17th International Conference on Molecular Beam Epitaxy. <10.1016/j.jcrysgro.2012.11.046>. <hal-00788399>
  • Thanh Tra Nguyen, Cédric Robert, Charles Cornet, Weiming Guo, Antoine Létoublon, et al.. Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si. Photonics west 2012, Jan 2012, San Fransisco, United States. SPIE, 8268, pp.82681H, 2012, <10.1117/12.910279>. <hal-00654337>
  • Cédric Robert, Thanh Tra Nguyen, Charles Cornet, Pascal Turban, Mathieu Perrin, et al.. Theoretical and experimental study of (In,Ga)As/GaP quantum dots. International Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. Springer (ISSN : 1931-7573, ESSN : 1556-276X), Nanoscale Research Letters, 7, pp.643, 2012, International Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012). <10.1186/1556-276X-7-643>. <hal-00726861>
  • Cédric Robert, Thanh Tra Nguyen, Charles Cornet, Pascal Turban, Mathieu Perrin, et al.. (In,Ga)As/GaP quantum dots for monolithic integration on silicon. 31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland. AIP (ISBN: 978-0-7354-1194-4), 1566, 2012. <hal-00726878>
  • Jean-Philippe Gauthier, Christophe Levallois, Cyril Paranthoën, Ahmad Shuaib, Nicolas Chevalier, et al.. Polarization properties of a quantum dashes VCSEL under a low frequency modulation. VCSEL Day 2011 (4th European Workshop on VCSELs), May 2011, Toulouse, France. <hal-00662865>
  • Olivier Castany, Cyril Paranthoën, Christophe Levallois, Ahmad Shuaib, Jean-Philippe Gauthier, et al.. A 34 nm monolithic continuously tunable VCSEL at 1.55 µm. European Semiconductor Laser Workshop 2011, Sep 2011, Lausanne, Switzerland. <hal-00662811>
  • Alexandre Bondi, Charles Cornet, Weiming Guo, Olivier Dehaese, Nicolas Chevalier, et al.. MBE growth of (GaAsPN/GaPN)/GaP quantum wells light emitting diode. euro-MBE 2011, Mar 2011, Alpe d'Huez, France. <hal-00654313>
  • Cédric Robert, Thanh Tra Nguyen, Charles Cornet, Nicolas Bertru, Nicolas Chevalier, et al.. Room temperature photoluminescence if InxGa1-xAs quantum dots on GaP substrate. Journées Boîtes Quantiques 2011 (JBQ 2011), Jun 2011, Toulouse, France. <hal-00654317>
  • Olivier Durand, Antoine Létoublon, D. J. Rogers, F. Hosseini Teherani, Charles Cornet, et al.. Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-merit. Photonics West, Jan 2011, San Fransisco, United States. 7940, pp.79400L, 2011, <10.1117/12.877661>. <hal-00654279>
  • Charles Cornet, Cédric Robert, Thanh Tra Nguyen, Weiming Guo, Alexandre Bondi, et al.. Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon. Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. IEEE Xplore Digital Library, pp.1, 2011, Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials (CSW/IPRM), 2011. <http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5978352>. <hal-00654285>
  • Salman Salman, Hervé Folliot, Julie Le Pouliquen, Nicolas Chevalier, Tony Rohel, et al.. Thermoelectric properties of InAs/InP nanostructures. Microtechnology and Thermal Problems in Electronics (Microthem 2011), Jun 2011, Lodz, Poland. <hal-00663179>
  • Salman Salman, Hervé Folliot, Julie Le Pouliquen, Nicolas Chevalier, Tony Rohel, et al.. Thermoelectric properties of InAs/InP nanostructures. Euromat 2011, Sep 2011, Montpellier, France. <hal-00663177>
  • Madhoussoudhana Dontabactouny, Rozenn Piron, Kamil Klaime, Nicolas Chevalier, Karine Tavernier, et al.. 10.6 GHz InAs/InP quantum dash two-section passively mode-locked lasers in L band.. Journées Boîtes Quantiques - Quantum Dots France, Jun 2011, Toulouse, France. <hal-00662957>
  • Olivier Castany, Cyril Paranthoen, Christophe Levallois, Ahmad Shuaib, Jean-Philippe Gauthier, et al.. Demonstration of a 34 nm monolithic continuously tunable VCSEL at 1.55 µm combined with liquid crystal. Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. IEEE (ISBN: 978-1-4577-1753-6), IEEE Xplore Digital Library, 2011, Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials (CSW/IPRM), 2011. <http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5978376>. <hal-00609330>
  • Thanh Tra Nguyen, Cédric Robert, Charles Cornet, Pascal Turban, Sylvain Tricot, et al.. Single InAs/InP quantum dashes and dots morphology on (001) and (113)B substrates. Journées Boîtes Quantiques 2011 (JBQ 2011), Jun 2011, Toulouse, France. <hal-00654323>
  • Charles Cornet, Pascal Turban, Nicolas Bertru, Sylvain Tricot, Olivier Dehaese, et al.. Single InAs quantum dots morphology and local electronic properties on (113)B InP substrate. euro-MBE, Mar 2011, Alpe d'Huez, France. <hal-00654305>
  • Olivier Durand, Antoine Létoublon, D. J. Rogers, F. Hosseini Teherani, Charles Cornet, et al.. Interpretation of the two-components observed in high resolution X-ray diffraction omega-scan peaks from mosaic thin films: case of both PLD-grown ZnO on c-sapphire substrate and MBE-grown GaP on silicon substrate. 3rd International Workshop "Current trends and advanced ellipsometric and XRD techniques for the characterization of nanostructured materials", Sep 2011, Bucharest, Romania. <hal-00726686>
  • Weiming Guo, Thanh Tra Nguyen, Antoine Létoublon, G. Elias, Charles Cornet, et al.. Structural characterisation of GaP/Si nanolayers. European Materials Research Society 2011, May 2011, Strasbourg, France. <hal-00654330>
  • Weiming Guo, Thanh Tra Nguyen, G. Elias, Antoine Létoublon, Charles Cornet, et al.. Structural charaterisation of GaP/Si nanolayers. Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. IEEE Xplore Digital Library, pp.1-4, 2011, Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials (CSW/IPRM), 2011. <http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5978357>. <hal-00654292>
  • Weiming Guo, G. Elias, Antoine Létoublon, Charles Cornet, A. Ponchet, et al.. structural characterization of MBE grown GaP/Si nanolayers. euro-MBE, Mar 2011, Alpe d'Huez, France. <hal-00654309>
  • Jean-Philippe Gauthier, Cyril Paranthoen, Christophe Levallois, Jean-Michel Lamy, Hervé Folliot, et al.. Caractérisation dynamique de la stabilité de polarisation des VCSELs a fils quantiques pour la réalisation de sources telecom accordables. Séminaire PONANT 2010, Jul 2010, Rennes, France. ponant2010.foton.cnrs.fr, pp.15-17, Séminaire PONANT 2010 - recueil des communications. <http://ponant2010.foton.cnrs.fr/>. <hal-00589384>
  • Charles Cornet, Antoine Létoublon, Weiming Guo, Alexandre Bondi, Soline Richard, et al.. Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur silicium. Séminaire PONANT 2010, Jul 2010, Rennes, France. ponant2010.foton.cnrs.fr, pp.9-11, 2010, Séminaire PONANT 2010 - recueil des communications. <http://ponant2010.foton.cnrs.fr/>. <hal-00504506>
  • Rozenn Piron, Olivier Dehaese, Frederic Grillot, Estelle Homeyer, Dayong Zhou, et al.. Lasers à boites quantiques sur InP pour les applications télécom à 1,55 µm. Séminaire PONANT 2010, Jul 2010, Rennes, France. ponant2010.foton.cnrs.fr, Séminaire PONANT 2010 - recueil des communications. <http://ponant2010.foton.cnrs.fr/>. <hal-00662947>
  • Alexandre Bondi, Weiming Guo, Hervé Folliot, Charles Cornet, Nicolas Chevalier, et al.. Réalisation d'une DEL à puits quantiques de GaAsP sur substrat GaP. INNOV'INSA (Recherche, développement, innovation et transfert à l'INSA), May 2010, Rennes, France. pp.1, 2010. <hal-00504484>
  • Charles Cornet, Antoine Létoublon, Julien Lapeyre, Cyril Paranthoen, Christophe Levallois, et al.. caractérisation de semi-conducteurs III-V nanostructurés par microscopie à force atomique. Journées de la microscopie champ proche Bretagne, Jun 2010, Rennes, France. pp.1, 2010. <hal-00504500>
  • Olivier Castany, Laurent Dupont, Ahmad Shuaib, Jean-Philippe Gauthier, Christophe Levallois, et al.. Tunable VCSEL with intracavity liquid crystal layer. 3rd Scientific EOS Annual Meeting (EOSAM 2010), Oct 2010, Paris, France. 2010. <hal-00565932>
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  • Maud Gicquel-Guézo, Hanond Nong, Christophe Labbé, Alain Moréac, Alain Le Corre, et al.. Highlighting excitonic optical properties of bundled carbon nanotubes to tailor novel saturable absorbers. 9th International Conference Trends in Nanotechnology (TNT 2008), Sep 2008, Oviedo, Spain. 6 (10), pp.2160, 2009, <10.1002/pssc.200881708>. <hal-00531462>
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  • Jean-Michel Lamy, Cyril Paranthoen, Christophe Levallois, Soline Richard, Hervé Folliot, et al.. Design of InGaAs/InP 1.55μm vertical cavity surface emitting lasers. International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD '08), Sep 2008, Nottingham, United Kingdom. p 1-2, 2008, <10.1109/NUSOD.2008.4668208>. <hal-00490938>
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  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Cyril Paranthoen, et al.. Recent progress in QD broad area lasers. ePIXnet annual meeting, Sep 2006, Lausanne, Switzerland. <hal-00491803>
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  • Christophe Levallois, Alain Le Corre, Olivier Dehaese, Hervé Folliot, Cyril Paranthoen, et al.. Étude de dispositifs optiques à microcavité verticale pour une émission laser polarisée. 9ème Colloque sur les Lasers et l'Optique Quantique, Sep 2005, Dijon, France. 135, p. 125-126, 2006, <10.1051/jp4:2006135025>. <hal-00491469>
  • Charles Cornet, Christophe Labbé, Charly Platz, Jacky Even, Hervé Folliot, et al.. Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniques. journée des doctorants de Rennes, Dec 2004, Rennes, France. pp.1, 2004. <hal-00504407>
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  • Christophe Levallois, Alain Le Corre, Slimane Loualiche. Laser à cavité verticale accordable en longueur d'onde. Journées Nationales Microélectronique Optoélectronique (JNMO 2004), Jun 2004, Montpellier, France. p. 207-208, 2004. <hal-00491477>
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Poster7 documents

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  • Samy Almosni, Cédric Robert, Charles Cornet, Thanh Tra Nguyen, Yanping Wang, et al.. Development of GaAsPN alloy for its integration in III-V/Si tandem solar cell. Workshop on above 25% efficiency solar cells via low cost approaches, Jul 2014, Palaiseau, France. <hal-01115014>
  • Kamil Klaime, Rozenn Piron, Dame Thiam, Cyril Paranthoen, Nicolas Chevalier, et al.. Lasers à blocage de modes mono-section à base de boites quantiques InAs sur InP émettant dans la bande L à un taux de répétition de 102 GHz. Journées Boîtes Quantiques 2013 (JBQ 2013), Jun 2013, Paris, France. <hal-01165712>
  • Kamil Klaime, Dame Thiam, Rozenn Piron, Cyril Paranthoen, Thomas Batte, et al.. Single and Double Section InAs Quantum Dots Mode‐Locked Laser Elaborated on Misoriented (001) InP Substrate. International Symposium on Physics and Applications of Laser Dynamics 2013 (IS-PALD 2013), Oct 2013, Paris, France. <hal-01165707>
  • Kamil Klaime, Rozenn Piron, Dame Thiam, Cyril Paranthoen, Olivier Dehaese, et al.. Lasers à blocage de modes bi-section à base de boites quantiques InAs sur InP (001) désorienté émettant à 1,64 µm à des taux de répétitions de 22,6 GHz. Optique Paris XIII - 33è Journées Nationales d'Optique Guidée (JNOG'33), Jul 2013, Villetaneuse, France. <hal-01167850>
  • Kamil Klaime, Cosimo Calo, Rozenn Piron, Cyril Paranthoen, Dame Thiam, et al.. InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate. Compound Semiconductor Week 2013 - 25th International Conference on Indium Phosphide and Related Materials (IPRM 2013), May 2013, Kobe, Japan. IEEE (ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. <10.1109/ICIPRM.2013.6562595>. <hal-01167841>
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