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Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for III-V photonics platform on silicon

 Yanping Wang , Antoine Létoublon , Thanh Tra Nguyen , Julien Stodolna , Nicolas Bertru , et al.
12th Biennal Conference on High-Resolution X-Ray Diffraction and Imaging, Sep 2014, Villard de Lans, France
Communication dans un congrès hal-01115004v1

Abrupt heterointerface and low defect density in GaP/Si nanolayers

 Yanping Wang , Julien Stodolna , Thanh Tra Nguyen , Antoine Létoublon , Jithesh Kuyyalil , et al.
Compound Semiconductor Week 2014, May 2014, Montpellier, France
Communication dans un congrès hal-01115278v1

Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si

 Thanh Tra Nguyen , Cédric Robert Robert , Charles Cornet , Weiming Guo , Antoine Létoublon , et al.
Photonics west 2012, Jan 2012, San Fransisco, United States. pp.82681H, ⟨10.1117/12.910279⟩
Communication dans un congrès hal-00654337v1
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Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon

 Thanh Tra Nguyen , Cédric Robert Robert , Weiming Guo , Antoine Létoublon , Charles Cornet , et al.
Journal of Applied Physics, 2012, 112 (5), pp.053521. ⟨10.1063/1.4751024⟩
Article dans une revue hal-00726722v1

Lasers à îlots quantiques InAs/InP émettant à 1.55 µm pompés électriquement

 Charly Platz , Philippe Caroff , Cyril Paranthoën , Gautier Moreau , Nicolas Bertru , et al.
10èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2004), Jun 2004, La Grande Motte, France
Communication dans un congrès hal-00149423v1

A 34 nm monolithic continuously tunable VCSEL at 1.55 µm

 Olivier Castany , Cyril Paranthoën , Christophe Levallois , Ahmad Shuaib , Jean-Philippe Gauthier , et al.
European Semiconductor Laser Workshop 2011, Sep 2011, Lausanne, Switzerland
Communication dans un congrès hal-00662811v1
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Fonctionnement Classe A faible bruit d'un laser VECSEL injecté électriquement et émettant à 1,5 µm

 Anwar Kerchaoui , Alexandru Mereuta , Andrei Caliman , Steve Bouhier , Thomas Batte , et al.
Journée du Club Optique et Micro-ondes (JCOM 2021), Jun 2021, Paris, France
Communication dans un congrès hal-03386462v1

A theoretical and experimental study of lambda>2 µm luminescence of quantum dots on InP substrate

 François Doré , Jacky Even , Charles Cornet , Andrei Schliwa , Nicolas Bertru , et al.
28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.889, ⟨10.1063/1.2730177⟩
Communication dans un congrès hal-00491466v1

Single InAs quantum dots morphology and local electronic properties on (113)B InP substrate

 Charles Cornet , Pascal Turban , Nicolas Bertru , Sylvain Tricot , Olivier Dehaese , et al.
euro-MBE, Mar 2011, Alpe d'Huez, France
Communication dans un congrès hal-00654305v1
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1.55-µm optically pumped tunable VCSEL based on a nano-polymer dispersive liquid crystal phase modulator

 Christophe Levallois , Vivien Verbrugge , Laurent Dupont , Jean-Louis de Bougrenet de La Tocnaye , Bertrand Caillaud , et al.
Photonics Europe, Apr 2006, Strasbourg, France. pp.61850W, ⟨10.1117/12.662232⟩
Communication dans un congrès hal-00488203v1

Croissance par MBE de Boites quantiques InP sur GaP/Si

 Weiming Guo , Alexandre Bondi , Hervé Folliot , Charles Cornet , Antoine Létoublon , et al.
journées nanoscience de Bretagne, Jun 2008, Nantes, France. pp.1
Communication dans un congrès hal-00491778v1

Improvement of 1.55 µm InAs QD laser using vicinal (001)InP substrate

 Georges Elias , Antoine Letoublon , Rozenn Piron , Ibrahim Alghoraibi , Karine Tavernier , et al.
IPRM, Indium Phosphide & Related Materials, May 2009, Newportbeach, United States. pp.41 - 44, ⟨10.1109/ICIPRM.2009.5012422⟩
Communication dans un congrès hal-00485799v1

Stransky-Krastanow Gas Source MBE growth and optical properties of InAs/GaP quantum dots

 Charles Cornet , Olivier Dehaese , Laurent Pedesseau , Ibrahim Alghoraibi , Tony Rohel , et al.
euro-MBE conference, Mar 2007, Sierra nevada, Granada, France. pp.1
Communication dans un congrès hal-00491810v1
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Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited

 Ibrahim Alghoraibi , Tony Rohel , Nicolas Bertru , Alain Le Corre , Antoine Letoublon , et al.
Journal of Crystal Growth, 2006, 293, pp.263. ⟨10.1016/j.jcrysgro.2006.05.046⟩
Article dans une revue hal-00485589v1

Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots

 Thanh Tra Nguyen , Cédric Robert Robert , Charles Cornet , Mathieu Perrin , Jean-Marc Jancu , et al.
Applied Physics Letters, 2011, 99, pp.143123. ⟨10.1063/1.3646911⟩
Article dans une revue hal-00654296v1

Polarization control of 1.6 µm vertical-cavity surface-emitting lasers using InAs quantum dashes on InP(001)

 Jean-Michel Lamy , Cyril Paranthoën , Christophe Levallois , Abdulhadi Nakkar , Hervé Folliot , et al.
Applied Physics Letters, 2009, 95, pp.011117. ⟨10.1063/1.3176437⟩
Article dans une revue hal-00485689v1

Enhancement of the polarization stability of a 1.55 µm emitting vertical-cavity surface-emitting laser under modulation using quantum dashes

 Jean-Philippe Gauthier , Cyril Paranthoën , Christophe Levallois , Ahmad Shuaib , Jean-Michel Lamy , et al.
Optics Express, 2012, 20 (15), pp.16832-16837. ⟨10.1364/OE.20.016832⟩
Article dans une revue hal-00717931v1

1.55 μm VCSEL based on InAs quantum-dashes with an emission covering 105 nm wavelength range

 Fethallah Taleb , Christophe Levallois , Cyril Paranthoën , Jean-Philippe Gauthier , Nicolas Chevalier , et al.
Euro VCSEL-DAY 2013, May 2013, Lausanne, Switzerland
Communication dans un congrès hal-00920834v1

Quantitative optoelectronic measurements of carrier thermodynamics properties in quantum well hot carrier solar cell

 Dac-Trung Nguven , Laurent Lombez , François Gibelli , Soline Boyer-Richard , Alain Le Corre , et al.
44th IEEE Photovoltaic Specialists Conference (PVSC 2017), Jun 2017, Washington, United States. pp.2192-2194, ⟨10.1109/PVSC.2017.8366530⟩
Communication dans un congrès hal-02402286v1

Experimental investigation of performances enhancement in hot carrier solar cells: improvements and perspectives (Conference Presentation)

 Laurent Lombez , Dac-Trung Nguyen , François Gibelli , Julie Goffard , Andrea Cattoni , et al.
SPIE Photonics West - OPTO 2019, Feb 2019, San Francisco, United States. pp.109130E, ⟨10.1117/12.2513178⟩
Communication dans un congrès hal-02402232v1
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Determination of photo-induced Seebeck coefficient for hot carrier solar cell applications

 Hamidreza Esmaielpour , Daniel Suchet , Laurent Lombez , Amaury Delamarre , Soline Boyer-Richard , et al.
47th Photovoltaic Specialists Conference (PVSC 2020), Jun 2020, Calgary (virtual), Canada. pp.0747-0751, ⟨10.1109/PVSC45281.2020.9300544⟩
Communication dans un congrès hal-03223077v1

Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 µm wavelength under high resonant excitation

 Christophe Labbé , Charles Cornet , Hervé Folliot , Philippe Caroff , Christophe Levallois , et al.
ICSSN (International Conference on SuperLattices, Nano-structures and Nano-Devices), Jul 2006, Istanbul, Turkey. pp.454, ⟨10.1002/pssc.200673214⟩
Communication dans un congrès istex hal-00491873v1

Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

 Samy Almosni , Pierre Râle , Cédric Robert Robert , Thanh Tra Nguyen , Charles Cornet , et al.
Journées nationales du photovoltaïque (JNPV 2012), 2012, Chantilly, France
Communication dans un congrès hal-00788478v1

Lattice-matched GaAsPN/GaP single junction solar cell for high-efficiency tandem solar cells on silicon

 Samy Almosni , Charles Cornet , Antoine Létoublon , Nicolas Bertru , Alain Le Corre , et al.
Euro-MBE 2015, Mar 2015, Canazei, Italy. 2015
Poster de conférence hal-01147439v1
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Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate

 Anne Ponchet , Laurent Pedesseau , Alain Le Corre , Charles Cornet , Nicolas Bertru
Applied Physics Letters, 2019, 114 (17), pp.173102. ⟨10.1063/1.5091058⟩
Article dans une revue hal-02119035v1

20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate

 Kamil Klaime , Rozenn Piron , Cyril Paranthoen , Thomas Batte , Frederic Grillot , et al.
24th International Conference on Indium Phosphide and Related Materials (IPRM 2012), Aug 2012, Santa Barbara, United States. pp.181-184, ⟨10.1109/ICIPRM.2012.6403352⟩
Communication dans un congrès hal-00726881v1

Lasers devices based on nanostructures grown on InP substrate for 1.55 μm emission

 Christophe Levallois , Jean-Philippe Gauthier , Cyril Paranthoen , Rozenn Piron , Frederic Grillot , et al.
Workshop Frontier 2010, Dec 2010, Albi, France
Communication dans un congrès hal-00589343v1

High Frequency Quantum Dots Mode Locked Laser for Telecommunication Applications

 Kamil Klaime , Rozenn Piron , Cyril Paranthoën , Thomas Batte , Frederic Grillot , et al.
European Semiconductor Laser Workshop (ESLW 2012), Sep 2012, Brussels, Belgium
Communication dans un congrès hal-00806320v1
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Étude de dispositifs optiques à microcavité verticale pour une émission laser polarisée

 Christophe Levallois , Alain Le Corre , Olivier Dehaese , Hervé Folliot , Cyril Paranthoen , et al.
9ème Colloque sur les Lasers et l'Optique Quantique, Sep 2005, Dijon, France. p. 125-126, ⟨10.1051/jp4:2006135025⟩
Communication dans un congrès hal-00491469v1
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Growth of quantum wires for long-wavelength VCSEL with a polarized laser emission

 Christophe Levallois , Philippe Caroff , Cyril Paranthoen , Hervé Folliot , Olivier Dehaese , et al.
International Workshop on Semiconductor Quantum Dot based Devices and Applications (IWSQDA), Mar 2006, Paris, France. p 1-2
Communication dans un congrès hal-00491379v1
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