Nombre de documents

155

CV de Alain CAPPY


Communication dans un congrès95 documents

  • A. Cappy. Information processing paradigms of the post CMOS era : devices and architectures. 38th European Solid-State Circuits Conference, ESSCIRC 2012, Tutorial : EU project NANOTEC on Ecosystems Technology & Design for Nanoelectronics, 2012, Bordeaux, France. <hal-00797328>
  • A. Cappy. Le réseau RENATECH des grandes centrales de technologie du CNRS. 4ème Colloque du Laboratoire International Associé en Nanotechnologies et Nanosystèmes, 2011, Allevard-Les-Bains, France. <hal-00807125>
  • B. Hackens, F. Martins, M.G. Pala, H. Sellier, T. Ouisse, et al.. Imaging the electron local density of states inside buried semiconductor quantum rings. 29th Conference on the Physics of Semiconductors, Rio de Janeiro, July 27- August 1, 2008 to be published in AIP Conference Proceedings Series, Jul 2008, France. 2008. <hal-00392551>
  • B.G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, et al.. Monte Carlo comparison of the noise performance of InAlAs/InGaAs double-gate and standard HEMTs. IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, Versailles, France. pp.1-4, 2008, <10.1109/ICIPRM.2008.4702973>. <hal-00800960>
  • N. Dyakonova, D. Coquillat, F. Teppe, W. Knap, M.E. Levinshtein, et al.. THz emission from AlGaN/GaN high mobility transistors. V International Conference 'Basic Problems of Optics', 2008, St Petersburg, Russia. <hal-00811735>
  • A. Olivier, T. Gehin, L. Desplanque, X. Wallart, J. Cheng, et al.. Isolation mésa par gravures humide et sèche des HEMTs AlSb/InAs sur substrat InP. 11èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2008, 2008, Bordeaux, France. <hal-00361522>
  • S. Bollaert, A. Olivier, Y. Roelens, N. Wichmannn, A. Shchepetov, et al.. HEMTs AlSb/InAs pour applications ultra faible consommation. 12èmes Journées Nano, Micro et Optoélectronique, JNMO'08, 2008, St Pierre d'Oléron, France. <hal-00361523>
  • N. Dyakonova, D. Coquillat, F. Teppe, W. Knap, M.A. Poisson, et al.. THz emission from AlGaN/GaN high mobility transistors. EOS Annual Meeting, Topical Meeting 2 : Terahertz - Science and Technology, 2008, Paris, France. <hal-00362036>
  • N. Wichmann, A. Shchepetov, I. Duszynski, Y. Roelens, X. Wallart, et al.. Fabrication technology and device performance of ultra-short 30-nm-gate pseudomorphic In0.52Al0.48As/In0.75Ga0.25As HEMTs. IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. _, pp.1-4, 2008, <10.1109/ICIPRM.2008.4702912>. <hal-00360404>
  • A. Olivier, T. Gehin, L. Desplanque, X. Wallart, Y. Roelens, et al.. AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolation. IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. _, pp.1-3, 2008, <10.1109/ICIPRM.2008.4702979>. <hal-00360405>
  • N. Dyakonova, D. Coquillat, F. Teppe, W. Knap, M.E. Levinshtein, et al.. THz emission from AlGaN/GaN high mobility transistors. V International Conference “Basic Problems of Optics, 2008, St Petersburg, Russia. pp.21, 2008. <hal-00390707>
  • N. Wichmann, A. Shchepetov, I. Duszynski, Y. Roelens, X. Wallart, et al.. HEMT AlInAs/InGaAs pseudomorphique sur substrat d'InP de longueur de grille de 30nm et de Ft = 450GHz. 15èmes Journées Nationales Microondes, JNM 2007, 2007, France. LAAS, Toulouse, France, pp.1D20, 2007. <hal-00284471>
  • J. Grahn, E. Lefebvre, M. Borg, M. Malmkvist, L. Desplanque, et al.. Development of InAs/AlSb HEMT technology for high-frequency operation. Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2007, 2007, Venice, Italy. <hal-00366992>
  • B.G. Vasallo, T. Gonzalez, D. Pardo, J. Mateos, N. Wichmann, et al.. Monte Carlo comparison between InAlAs/InGaAS double-gate and standard HEMTs. Spanish Conference on Electron Devices, 2007, Spain. IEEE, Piscataway, NJ, USA, pp.80-83, 2007, <10.1109/SCED.2007.383958>. <hal-00284024>
  • B.G. Vasallo, T. Gonzalez, D. Pardo, J. Mateos, N. Wichmann, et al.. Noise behavior of InP-based double-gate and standard HEMTs : a comparison. 19th International Conference on Noise and Fluctuations, ICNF 2007, 2007, Japan. American Institute of Physics, Melville, NY, USA, pp.167-170, 2007, <10.1063/1.2759659>. <hal-00284062>
  • M. Borg, E. Lefebvre, M. Malmkvist, L. Desplanque, X. Wallart, et al.. DC and RF performance of 0.2-2.4 µm gate length InAs/AlSb HEMTs. 19th International Conference on Indium Phosphide and Related Materials, IPRM'07, 2007, Japan. IEEE, Piscataway, NJ, USA, pp.67-70, 2007, <10.1109/ICIPRM.2007.381124>. <hal-00284022>
  • E. Lefebvre, M. Borg, M. Malmkvist, J. Grahn, L. Desplanque, et al.. (Cl2:Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs. 19th International Conference on Indium Phosphide and Related Materials, IPRM'07, 2007, Japan. IEEE, Piscataway, NJ, USA, pp.125-128, 2007, <10.1109/ICIPRM.2007.381139>. <hal-00284023>
  • I. Iniguez de La Torre, J. Mateos, T. Gonzalez, D. Pardo, S. Bollaert, et al.. Surface charge effects in ballistic T-branch nanojunctions. Spanish Conference on Electron Devices, 2007, Spain. IEEE, Piscataway, NJ, USA, pp.48-51, 2007, <10.1109/SCED.2007.383993>. <hal-00284056>
  • S. Bollaert, Y. Roelens, L. Desplanques, N. Wichmannn, A. Shchepetov, et al.. HEMT AlSb/InAs pour applications ultra-faible consommation. 15èmes Journées Nationales Microondes, JNM 2007, 2007, France. LAAS, Toulouse, France, pp.5C3-1-4, 2007. <hal-00370296>
  • A. Cappy. La nanoélectronique pour les télécommunications - Challenges et perspectives. Grand Colloque STIC 2007, 2007, Paris, France. <hal-00286240>
  • A. Cappy. Nanoelectronics research in Europe. International Conference on Nanoscience and Nanotechnology, 2007, New Delhi, India. <hal-00286243>
  • H. Happy, A. Cappy. Nanotechnologies : la prochaine révolution industrielle ?. TELECOM'2007 & 5èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2007, Fès, Maroc. <hal-00286245>
  • N. Dyakonova, A.E. Fatimy, J. Lusakowski, W. Knap, M.I. Dyakonov, et al.. Room-temperature terahertz emission from nanometer field-effect transistors. Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, 2006, China. IEEE, Piscataway, NJ, USA, pp.145, 2006, <10.1109/ICIMW.2006.368353>. <hal-00241317>
  • A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, N. Dyakonova, et al.. Plasma wave HEMTs for THz applications. Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, 2006, China. IEEE, Piscataway, NJ, USA, pp.136, 2006, <10.1109/ICIMW.2006.368344>. <hal-00241319>
  • N. Wichmann, S. Bollaert, B.G. Vasallo, X. Wallart, G. Dambrine, et al.. InP-based InAlAs/InGaAs double-gate transistors beyond conventional HEMT's limitations. 1st European Microwave Integrated Circuits Conference, EuMIC 2006, 2006, Manchester, United Kingdom. 2006. <hal-00162820>
  • L. Bednarz, R. Rashmi, G. Farhi, B. Hackens, V. Bayot, et al.. Theoretical and experimental characterization of Y-branch nanojunction rectifier up to 94 GHz. 2005, European Microwave Association, UK, UK, 4 pp., 2005. <hal-00154895>
  • J. Mateos, S. Perez, D. Pardo, T. Gonzalez, J. Lusakowski, et al.. Terahertz emission and noise spectra in HEMTs. 2005, American Institute of Physics, pp.423-430, 2005. <hal-00154897>
  • F. Teppe, J. Lusakowski, N. Dyakonova, Y.M. Meziani, W. Knap, et al.. Terahertz emission and detection by plasma waves in nanoscale transistors. 2005, American Instiute of Physics, pp.1523-1524, 2005. <hal-00154898>
  • J.F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. Gonzalez, et al.. Terahertz emission from nanometric HEMTs analyzed by noise spectra. 2005, American Institute of Physics, pp.335-338, 2005. <hal-00154896>
  • A. Cappy, N. Wichmann, S. Bollaert, X. Wallart, Y. Roelens, et al.. New HEMT structures for THz applications. Device Research Conference, DRC 2005, 2005, Santa Barbara, CA, United States. 2005. <hal-00125315>
  • I. Duszynski, N. Wichmann, S. Bollaert, X. Wallart, A. Cappy. Réalisation de transistors HEMTs AlInAs/GaInAs de 20nm de longueur de grille. Actes des 14èmes Journées Nationales Microondes, 2005, Nantes, France. 2005. <hal-00126727>
  • J.S. Galloo, C. Gardes, Z. Teukam, Y. Roelens, S. Bollaert, et al.. Technologie, simulation et caractérisation à T=300K de dispositifs balistiques de type GaInAs/AlInAs avec grille de commande. Actes des 14èmes Journées Nationales Microondes, 2005, Nantes, France. 2005. <hal-00126725>
  • N. Wichmann, I. Duszynski, S. Bollaert, X. Wallart, A. Cappy. HEMT In0.52Al0.48As/In0.53Ga0.47As double-grille de longueur 100nm. Actes des 14èmes Journées Nationales Microondes, 2005, Nantes, France. 2005. <hal-00126724>
  • S. Bollaert, Y. Roelens, A. Shchepetov, X. Wallart, A. Cappy, et al.. Nanotransistors pour émission THz. 3èmes Journées THz, 2005, Aussois, France. 2005. <hal-00125897>
  • G. Prigent, E. Rius, K. Blary, H. Happy, S. Lepilliet, et al.. Design of narrow band-pass planar filters for millimeter-wave applications up to 220 GHz. 2005, IEEE, Piscataway, NJ, USA, pp.1491-1494, 2005. <hal-00125305>
  • S. Bollaert, A. Cappy, G. Dambrine, I. Duszynski, Y. Roelens, et al.. HEMTs for millimeter and sub-millimeter waves applications. GDR THz, 2005, Montpellier, France. 2005. <hal-00125314>
  • A. Cappy, J.S. Galloo, S. Bollaert, Y. Roelens, J. Mateos, et al.. InP based ballistic nanodevices. International Conference on Indium Phosphide and Related Materials, IPRM 2005, 2005, Glasgow, Scotland, United Kingdom. 2005. <hal-00125316>
  • A. Cappy, N. Wichmann, J.S. Galloo, S. Bollaert, Y. Roelens, et al.. Trends and challenge in micro and nanoelectronics device research in Europe. Topical Workshop on Heterostructure Microelectronics, TWHM 2005, 2005, Hyogo, Japan. 2005. <hal-00125339>
  • Frederic Teppe, J. Lusakowski, Nina Diakonova, Ym Meziani, Wojciech Knap, et al.. Terahertz emission and detection by plasma waves in nanoscale transistors. 27th International Conference on the Physics of Semiconductors (ICPS-27), Jul 2004, Flagstaff (AZ), France. AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1 D, MELVILLE, NY 11747-4501 USA, 772, pp.1523-1524, 2005. <hal-00540645>
  • A. Cappy. De micro à nanotechnologies : rupture ou continuité. Forum du Futur, 2004, Paris, France. 2004. <hal-00133916>
  • N. Wichmann, I. Duszynski, S. Bollaert, J. Mateos, X. Wallart, et al.. 100nm InAlAS/InGaAs double-gate HEMT using transferred substrate. 2004, IEEE, Piscataway, NJ, USA, pp.1023-1026, 2004. <hal-00133886>
  • J.S. Galloo, E. Pichonat, Y. Roelens, S. Bollaert, X. Wallart, et al.. Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures. 2004, IEEE, Piscataway, NJ, USA, pp.378-381, 2004. <hal-00133896>
  • L. Lukasz, R. Rashmi, B. Hackens, H. Boutry, V. Bayot, et al.. Nanoscaled double Y-Branch junction operating as room temperature RF to DC rectifier. 2004, IEEE, Piscataway, NJ, USA, pp.284-286, 2004. <hal-00133899>
  • N. Wichmann, I. Duszynski, T. Parenty, S. Bollaert, J. Mateos, et al.. Submicrometer InAlAs/InGaAs double-gate HEMT's on transferred substrate. 2004, Horizon House Publications, London, UK, pp.215-218, 2004. <hal-00133903>
  • J.S. Galloo, E. Pichonat, S. Bollaert, Y. Roelens, X. Wallart, et al.. Technologie pour dispositifs AlInAs/GaInAs. GDR Nanoélectronique, 2004, Aussois, France. 2004. <hal-00133917>
  • N. Wichmann, I. Duszynski, T. Parenty, S. Bollaert, J. Mateos, et al.. InAlAs/InGaAs double gate HEMTS with high extrinsic transconductance. 2004, IEEE, Piscataway, NJ, USA, pp.295-298, 2004. <hal-00133877>
  • J.S. Galloo, Y. Roelens, S. Bollaert, E. Pichonat, X. Wallart, et al.. Ballistic GaInAs/AlInAs devices technology and characterization at room temperature. 2004, IEEE, Piscataway, NJ, USA, pp.98-100, 2004. <hal-00133881>
  • J.S. Galloo, Y. Roelens, S. Bollaert, E. Pichonat, X. Wallart, et al.. Ballistic devices based on T-branch junctions and Y-branch junctions on GaInAs/AlInAs heterostructure. 2004, Horizon House Publications, London, UK, pp.219-222, 2004. <hal-00133884>
  • N. Wichmann, I. Duszynski, T. Parenty, S. Bollaert, J. Mateos, et al.. Double-gate HEMTs on transferred substrate. 2003, IEEE, Piscataway, NJ, USA, pp.118-121, 2003. <hal-00145995>
  • J. Mateos, B.G. Vasallo, D. Pardo, T. Gonzales, H. Boutry, et al.. Room temperature nonlinear transport in InGaAs/InAlAs based ballistic nanodevices. 2003, IEEE, Piscataway, NJ, USA, pp.484-487, 2003. <hal-00145996>
  • I. Duszynski, T. Parenty, S. Bollaert, H. Happy, J. Mateos, et al.. Amélioration du fmax des HEMTs InAlAs/InGaAs sur substrat d'InP de longueur de grille 70nm par optimisation de la structure de couche. 2003, Institut d'Electronique, Microélectronique et Nanotechnologie, Villeneuve d'Ascq, France, pp.2B1-1, 2003. <hal-00145993>
  • N. Wichmann, I. Duszynski, T. Parenty, S. Bollaert, J. Mateos, et al.. HEMT double grille sur substrat reporté. 2003, Institut d'Electronique, Microélectronique et Nanotechnologie, Villeneuve d'Ascq, France, pp.1D-1, 2003. <hal-00146011>
  • E. Pichonat, J.S. Galloo, Y. Roelens, S. Bollaert, X. Wallart, et al.. Fabrication of nano-ballistic devices using high resolution process. Trends in NanoTechnology, TNT 2003, 2003, Salamanca, Spain. 2003. <hal-00146012>
  • Y. Roelens, J.S. Galloo, E. Pichonat, S. Bollaert, G. Six, et al.. Lignes coplanaires hautes impédances, influence d'une couche diélectrique. Optique Hertzienne et Diélectrique, OHD 2003, 2003, Calais, France. 2003. <hal-00146017>
  • A. Cappy. IEMN : a center of the french network for basic research in Micro@Nano technology. Trends in NanoTechnology, TNT 2003, 2003, Salamanca, Spain. 2003. <hal-00146046>
  • J.S. Galloo, E. Pichonat, Y. Roelens, S. Bollaert, X. Wallart, et al.. Technological fabrication of nanometric GaInAs/AlInAs ballistic devices. Trends in NanoTechnology, TNT 2003, 2003, Salamanca, Spain. 2003. <hal-00146040>
  • B. Hackens, L. Gence, S. Faniel, C. Gustin, H. Boutry, et al.. Nonlinear electron transport in InGaAs/InAlaS ballistic devices. Trends in NanoTechnology, TNT 2003, 2003, Salamanca, Spain. 2003. <hal-00146041>
  • G. Dambrine, T. Parenty, S. Bollaert, H. Happy, A. Cappy, et al.. An overview of low noise devices and associated circuits for 100-200 GHz space applications. 11th European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2003, 2003, Munchen, Germany. 2003. <hal-00146047>
  • A. Cappy. Nanotechnology : the next industrial revolution ?. 4th European Workshop on Microelectronics Education, EWME'02, 2002, Baiona, Spain. 2002. <hal-00147853>
  • Y. Roelens, B. Hackens, S. Faniel, C. Gustin, H. Boutry, et al.. Long dephasing time and high temperature ballistic transport in an InGaAs open quantum dot. International Conference on Superlattices Nano-structures and Nano-devices, ICSNN-02, 2002, Toulouse, France. 2002. <hal-00147857>
  • S. Bollaert, X. Wallart, S. Lepilliet, A. Cappy, E. Jalaguier, et al.. 0.12µm gate length In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate. 2002, IOP Publishing, Bristol, UK, pp.101-105, 2002. <hal-00152950>
  • I. Duszynski, N. Wichmann, S. Bollaert, X. Wallart, S. Lepilliet, et al.. Réalisation de transistors InAlAs/InGaAs sur substrats reportés. Actes des 9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, St Aygulf, France. 2002. <hal-00147827>
  • S. Bollaert, T. Parenty, X. Wallart, H. Happy, G. Dambrine, et al.. HEMT's design for applications beyond 100GHz. 2002, European Microwave Association, UK, pp.45-48, 2002. <hal-00147832>
  • J. Mateos, T. Gonzales, D. Pardo, S. Bollaert, X. Wallart, et al.. Improvement of the high frequency performance of HEMTs by bufferless technology. 2002, IEEE, Piscataway, NJ, USA, pp.173-176, 2002. <hal-00147849>
  • S. Bollaert, X. Wallart, S. Lepilliet, A. Cappy, E. Jalaguier, et al.. 0.12 µm gate length InAlAs/InGaAs HEMTs on transferred substrate. 2001, European Microwave Associtaion, UK, pp.171-174, 2001. <hal-00151762>
  • T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy. 70nm gate InP-based HEMTs with high ft and fmax. 11th European Heterostructure Technology Workshop, HETECH 01, 2001, Padova, Italy. 2001. <hal-00151776>
  • Olivier Llopis, J.B. Juraver, B. Tamen, F. Danneville, M. Chaubet, et al.. Nonlinear noise modeling of a PHEMT device through residual phase noise and low frequency noise measurements. 2001, IEEE, Piscataway, NJ, USA, pp.831-834, 2001. <hal-00151779>
  • S. Bollaert, A. Cappy. Transistors et circuits AlInAs/InGaAs pour applications millimétriques et sub-millimétriques. Atelier CNES, 2001, Toulouse, France. 2001. <hal-00151773>
  • F. Danneville, A. Cappy, Olivier Llopis. Non-linear noise in high-frequency devices. 16th International Conference on Noise in Physical Systems and 1/f Fluctuations, ICNF 2001, 2001, Gainesville, FL, United States. 2001. <hal-00151774>
  • F. Danneville, B. Tamen, A. Cappy, J.B. Juraver, Olivier Llopis, et al.. Low frequency noise conversion in FETs under nonlinear operation. 2001, European Microwave Association, UK, pp.247-250, 2001. <hal-00151767>
  • T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy. Design and realization of sub-100nm gate length HEMTs. 2001, IEEE, Piscataway, NJ, USA, pp.626-629, 2001. <hal-00151761>
  • J. Mateos, T. Gonzales, D. Pardo, V. Hoel, S. Bollaert, et al.. Design optimization of low-noise HEMTs. 2001, Springer Verlag, pp.1777-1778, 2001. <hal-00151768>
  • S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, et al.. 0.06µm gate length metamorphic InAlAS/InGaAs HEMTs on GaAs with ft and fmax. 2001, IEEE, Piscataway, NJ, USA, pp.192-195, 2001. <hal-00151759>
  • J. Mateos, T. Gonzales, D. Pardo, S. Bollaert, T. Parenty, et al.. Noise optimization of ultra-short gate HEMTs using Monte Carlo simulation. 2001, World Scientific, Singapore, Singapore, pp.245-248, 2001. <hal-00151775>
  • J. Mateos, T. Gonzales, D. Pardo, V. Hoel, S. Bollaert, et al.. Design optimisation of ultra-short gate HEMTs using Monte Carlo simulation. 3a Conferencia de Dispositivos Electronicos, 2001, Granada, Spain. 2001. <hal-00151778>
  • J.B. Juraver, B. Tamen, Olivier Llopis, F. Danneville, M. Chaubet, et al.. Modélisation non-linéaire en bruit d'un transistor PHEMT à l'aide de mesures de bruit BF et de bruit de phase en boucle ouverte. 2001, IRCOM, Limoges, France, pp.1A-4, 2001. <hal-00151780>
  • A. Chams Eddine, M. Klingler, M. Heddebaut, B. Bocquet, A. Cappy, et al.. Millimeter-wave passive imaging system for survey and obstacle detection in ITS. Proceedings of the 8th World Congress on Intelligent Transport Systems, 2001, Sydney, Australia. 2001. <hal-00152014>
  • D. Theron, Y. Cordier, X. Wallart, S. Bollaert, M. Zaknoune, et al.. HEMT structures and technology on GaAs and InP for power amplification in millimeter wave range. 2001, European Microwave Association, UK, pp.53-56, 2001. <hal-00152625>
  • N. Rolland-Haese, P. Noirel, B. Bocquet, P.A. Rolland, A. Cappy, et al.. Dispositif d'imagerie passive millimétrique temps réel pour applications au transport routier. Actes des 12èmes Journées Nationales Microonde, JNM 2001, 2001, Poitiers, France. 2001. <hal-00152039>
  • B. Tamen, F. Danneville, A. Cappy, J.B. Juraver, Olivier Llopis, et al.. Modélisation de bruit de phase d'oscillateurs à TECs. Actes des 12èmes Journées Nationales Microondes, JNM 2001, 2001, Poitiers, France. 2001. <hal-00152013>
  • Y. Cordier, M. Zaknoune, S. Bollaert, M. Boudrissa, E. Lefebvre, et al.. Les structures métamorphiques AlInAs/GaInAs sur substrat GaAs : croissance et applications. 20ème Séminaire National sur l'Epitaxie par Jets Moléculaires, EJM 2001, 2001, St Aygulf, France. 2001. <hal-00152677>
  • N. Cavassilas, F. Aniel, A. Nojeh, R. Adde, M. Zaknoune, et al.. Electroluminescence of metamorphic Inx Al1-xAs/InxGa1-xAs HEMTs on GaAs substrate. 2000, European Microwave Association, London, UK, 10 pp., 2000. <hal-00159003>
  • Y. Cordier, M. Zaknoune, S. Bollaert, A. Cappy. Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content. 2000, IEEE, Piscataway, NJ, USA, pp.102-105, 2000. <hal-00159005>
  • D. Theron, Y. Cordier, X. Wallart, S. Bollaert, M. Zaknoune, et al.. HEMT structures on GaAs or InP substrates for millimeter wave power amplification. 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE'2000, 2000, Aegean Sea, Greece. 2000. <hal-00159030>
  • Y. Cordier, M. Zaknoune, S. Bollaert, A. Cappy. Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMTs : effect of indium content. 2000, IEEE, Piscataway, NJ, USA, pp.102-105, 2000. <hal-00157883>
  • F. Danneville, B. Tamen, G. Dambrine, A. Cappy. Temperature noise model for FET mixers. 2000, American Institute of Physics, pp.541-546, 2000. <hal-00157898>
  • H.G. Happy, G. Six, M. Vanmackelberg, A. Cappy, G. Dambrine. Ultra low loss transmission lines on low resistivity silicon substrate. 2000, IEEE,Piscataway, NJ, USA, pp.1809-1812, 2000. <hal-00157901>
  • T. Parenty, S. Bollaert, J. Mateos-Lopez, A. Cappy. Design and realization of sub-100 nm gate length HEMTs. 10th European Workshop on Heterostructure Technology, heTech'00, 2000, Günzburg, Germany. 2000. <hal-00157904>
  • V. Hoel, H.G. Happy, P. Delemotte, G. Dambrine, A. Cappy. Stage de sensibilisation des étudiants au travail en salle blanche : réalisation d'éléments actifs et passifs. VIèmes Journées Pédagogiques du CNFM, 2000, Saint-Malo, France. 2000. <hal-00157900>
  • J. Mateos-Lopez, T. Gonzales, D. Pardo, V. Hoel, S. Bollaert, et al.. Design optimization of low-noise HEMTs. 2000, Springer Verlag, pp.1777-1778, 2000. <hal-00157882>
  • J. Mateos-Lopez, T. Gonzalez, D. Pardo, V. Hoel, S. Bollaert, et al.. Design optimisation of ultra-short gate HEMTs using Monte Carlo simulation. 2000, European Microwave Association, pp.624-627, 2000. <hal-00157877>
  • A. Chams Eddine, B. Bocquet, N. Rolland, G. Tittelein, P. Noirel, et al.. Real-time radiometric imaging system for transportation applications. 2000, European Microwave Association, London, UK, pp.126-129, 2000. <hal-00158166>
  • Y. Cordier, M. Zaknoune, S. Bollaert, A. Cappy. Charge control and electron transport properties in InyAl1-yAs/InxGa1-xAs metamorphic HEMTs : effect of indium content. 2000, IEEE, Piscataway, NJ, USA, pp.102-105, 2000. <hal-00158437>
  • Y. Cordier, A. Cappy, M. Zaknoune, S. Bollaert. Les matériaux métamorphiques : une voie pour l'intégration de composants pour applications millimétriques sur substrat d'arséniure de gallium. Journée Thématique sur l'Electronique Intégrée, 2000, Arcueil, France. 2000. <hal-00158447>
  • P.A. Rolland, A. Cappy, M.R. Friscourt. GaAs monolithic transferred-electron devices for millimeter waves applications. IEEE Microwave Theory and Technique Symposium, 1985, Saint-Louis, Missouri, United States. 1985. <hal-00005265>

Article dans une revue54 documents

  • B.G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, et al.. Monte Carlo study of the dynamic performance of a 100-nm-gate InAlAs/InGaAs velocity modulation transistor. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2010, 57, pp.2572-2578. <10.1109/TED.2010.2058633>. <hal-00567883>
  • N. Wichmann, B.G. Vasallo, S. Bollaert, Y. Roelens, X. Wallart, et al.. Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor. Applied Physics Letters, American Institute of Physics, 2009, 94, pp.103504-1-3. <10.1063/1.3095482>. <hal-00469682>
  • T. Gonzalez, I. Iniguez de La Torre, D. Pardo, J. Mateos, S. Bollaert, et al.. Monte Carlo simulation of surface charge effects in T-branch nanojunctions. physica status solidi (c), Wiley, 2008, 5, pp.94-97. <10.1002/pssc.200776512>. <hal-00356677>
  • A. El Fatimy, R. Tauk, S. Boubanga, F. Teppe, N. Dyakonova, et al.. Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation. physica status solidi (c), Wiley, 2008, 5, pp.244-248. <10.1002/pssc.200776585>. <hal-00360007>
  • A. El Fatimy, F. Teppe, S. Boubanga, N. Dyakonova, B. Gil, et al.. Nitride based nanotransistors as new sources and detectors of THz radiations. physica status solidi (c), Wiley, 2008, 5, pp.1947-1949. <10.1002/pssc.200778507>. <hal-00360008>
  • A. Shchepetov, C. Gardes, Y. Roelens, A. Cappy, S. Bollaert, et al.. Oblique modes effect on terahertz plasma wave resonant detection in InGaAs/InAlAs multichannel transistors. Applied Physics Letters, American Institute of Physics, 2008, 92, pp.242105-1-3. <10.1063/1.2945286>. <hal-00356666>
  • M. Borg, E. Lefebvre, M. Malmkvist, L. Desplanque, X. Wallart, et al.. Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain. Solid-State Electronics, Elsevier, 2008, 52, pp.775-781. <10.1016/j.sse.2007.12.002>. <hal-00356942>
  • B.G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, et al.. Comparison between the noise performance of double- and single-gate InP-based HEMTs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2008, 55, pp.1535-1540. <10.1109/TED.2008.921982>. <hal-00356667>
  • I. Iniguez de La Torre, J. Mateos, T. Gonzalez, D. Pardo, J.S. Galloo, et al.. Influence of the surface charge on the operation of ballistic T-branch junctions : a self-consistent model for Monte Carlo simulations. Semiconductor Science and Technology, IOP Publishing, 2007, 22, pp.663-670. <10.1088/0268-1242/22/6/014>. <hal-00283039>
  • B.G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, et al.. Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2007, 54, pp.2815-2822. <10.1109/TED.2007.907801>. <hal-00255757>
  • F. Martins, B. Hackens, M. G. Pala, Thierry Ouisse, Hermann Sellier, et al.. Imaging electron wave functions inside open quantum rings. Physical Review Letters, American Physical Society, 2007, 99, pp.136807. <10.1103/PhysRevLett.99.136807>. <hal-00193197>
  • S. Bollaert, A. Cappy, Y. Roelens, J.S. Galloo, C. Gardes, et al.. Ballistic nano-devices for high frequency applications. Thin Solid Films, Elsevier, 2007, 515, pp.4321-4326. <10.1016/j.tsf.2006.07.178>. <hal-00285625>
  • B. Hackens, L. Gence, S. Faniel, C. Gustin, X. Wallart, et al.. Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions. Physica E : Low-Dimensional Systems and Nanostructures, 2006, 34, pp.515-518. <hal-00154922>
  • B. Hackens, S. Faniel, C. Gustin, X. Wallart, S. Bollaert, et al.. Dwell-time related saturation of phase coherence in ballistic quantum dots. Physica E : Low-Dimensional Systems and Nanostructures, 2006, 34, pp.511-514. <hal-00154921>
  • N. Dyakonova, Michel Dyakonov, A. El Fatimy, J. Lusakowski, W. Knap, et al.. Room-temperature Terahertz Emission from Nanometer Field Effect Transistors. Applied Physics Letters, American Institute of Physics, 2006, 88 (14), pp.141906. <10.1063/1.2191421>. <hal-00264792>
  • N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M.I. Dyakonov, et al.. Room-temperature terahertz emission from nanometer field-effect transistors. Applied Physics Letters, American Institute of Physics, 2006, 88, pp.141906-1-3. <hal-00127944>
  • D. Wallin, I. Shorubalko, H.Q. Xu, A. Cappy. Nonlinear electrical properties of three-terminal junctions. Applied Physics Letters, American Institute of Physics, 2006, 89, pp.092124-1-3. <hal-00126525>
  • N. Dyakonova, A.E. Fatimy, J. Lusakowski, W. Knap, M.I. Dyakonov, et al.. Room-temperature terahertz emission from nanometer field-effect transistors. Applied Physics Letters, American Institute of Physics, 2006, 88, pp.141906-1-3. <hal-00126524>
  • Abdelouahad El Fatimy, Frederic Teppe, Nina Diakonova, Wojciech Knap, D. Seliuta, et al.. Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors. Applied Physics Letters, American Institute of Physics, 2006, 89, pp.131926. <10.1063/1.2358816>. <hal-00540634>
  • A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, et al.. Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors. Applied Physics Letters, American Institute of Physics, 2006, 89, pp.131926-1-3. <hal-00154920>
  • Abdelouahad El Fatimy, Stephane Boubanga Tombet, Frederic Teppe, Wojciech Knap, D. B. Veksler, et al.. Terahertz detection by GaN/AlGaN transistors. Electronics Letters, IET, 2006, 42, pp.1342-1344. <10.1049/cl:20062452>. <hal-00540638>
  • A. El Fatimy, S.B. Tombet, F. Teppe, W. Knap, D.B. Veksler, et al.. Terahertz detection by GaN/AlGaN transistors. Electronics Letters, IET, 2006, 42, pp.1342-1344. <hal-00147740>
  • B. Hackens, F. Martins, T. Ouisse, H. Sellier, S. Bollaert, et al.. Imaging and controlling electron transport inside a quantum ring. Nature Physics, Nature Publishing Group, 2006, 2, pp.826. <10.1038/nphys459>. <hal-00167167>
  • Nina Diakonova, Frederic Teppe, J. Lusakowski, Wojciech Knap, M. Levinshtein, et al.. Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors. Journal of Applied Physics, American Institute of Physics, 2005, 97, pp.114313. <10.1063/1.1921339>. <hal-00540641>
  • N. Dyakonova, J. Lusakowski, W. Knap, M. Levinshtein, M. S. Shur, et al.. Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors. Journal of Applied Physics, American Institute of Physics, 2005, 97, pp.114313-1-5. <hal-00125161>
  • J. Lusakowski, W. Knap, N. Dyakonova, J. Mateos, T. Gonzales, et al.. Voltage tunable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor. Journal of Applied Physics, American Institute of Physics, 2005, 97, pp.64307-1-7. <hal-00125162>
  • J. Lusakowski, N. Dyakonova, L. Varani, J. Mateos, T. Parenty, et al.. Voltage tuneable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor. Journal of Applied Physics, American Institute of Physics, 2005, 97 (6), pp.064307. <10.1063/1.1861140>. <hal-00330467>
  • J. Lusakowski, Frederic Teppe, Nina Diakonova, Ym Meziani, Wojciech Knap, et al.. Terahertz generation by plasma waves in nanometer gate high electron mobility transistors. physica status solidi (a), Wiley, 2005, 202, pp.656-659. <10.1002/pssa.200460468>. <hal-00540643>
  • J. Lusakowski, F. Teppe, N. Dyakonova, Y.M. Meziani, W. Knap, et al.. Terahertz generation by plasma waves in nanometer gate high electron mobility transistors. physica status solidi (a), Wiley, 2005, 202, pp.656-659. <hal-00154893>
  • N. Wichmann, I. Duszynski, X. Wallart, S. Bollaert, A. Cappy. Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2005, 26, pp.601-603. <hal-00154894>
  • N. Wichmann, I. Duszynski, X. Wallart, S. Bollaert, A. Cappy. 100-nm T-gate In0.53Ga0.47As-In0.52Al0.48As DG-HEMTs with two separate gate controls. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2005, 26, pp.601-603. <hal-00125132>
  • L. Berdnarz, R. Rashmi, B. Hackens, V. Bayot, S. Huynen, et al.. Low and room temperature studies of RF to DC rectifiers based on ballistic transport. Microelectronic Engineering, Elsevier, 2005, 81, pp.194-200. <hal-00125160>
  • B. Hackens, S. Faniel, C. Gustin, X. Wallart, S. Bollaert, et al.. Dwell-time-limited coherence in open quantum dots. Physical Review Letters, American Physical Society, 2005, 94, pp.146802-1-4. <hal-00125163>
  • J. Mateos, T. Gonzales, D. Pardo, S. Bollaert, T. Parenty, et al.. Design optimization of AlInAs-GaInAs HEMTs for high frequency applications. IEEE Transaction on Electron Devices, 2004, 51, pp.521-528. <hal-00133866>
  • J. Mateos, T. Gonzales, D. Pardo, S. Bollaert, T. Parenty, et al.. Design optimization of AlInAs-GaInAs HEMTs for low-noise applications. IEEE Transaction on Electron Devices, 2004, 51, pp.1228-1233. <hal-00133870>
  • B. Hackens, L. Gence, C. Gustin, X. Wallart, S. Bollaert, et al.. Sign reversal and tunable rectification in a ballistic nanojunction. Applied Physics Letters, American Institute of Physics, 2004, 85, pp.4508-4510. <hal-00133885>
  • W. Knap, J. Lusabowski, T. Parenty, S. Bollaert, A. Cappy, et al.. Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors. Applied Physics Letters, American Institute of Physics, 2004, 84, pp.2331-2333. <hal-00133879>
  • N. Wichmann, I. Duszynski, X. Wallart, S. Bollaert, A. Cappy. InAlAs-InGaAs double-gate HEMTs on transferred substrate. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2004, 25, pp.354-356. <hal-00133868>
  • J. Mateos, B.G. Vasallo, D. Pardo, T. Gonzales, E. Pichonat, et al.. Nonlinear effects in T-branch junctions. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2004, 25, pp.235-237. <hal-00133878>
  • B. Hackens, S. Faniel, F. Delfosse, C. Gustin, H. Boutry, et al.. Long dephasing time and high temperature ballistic transport in an InGaAs quantum dot. Physica E : Low-Dimensional Systems and Nanostructures, 2003, 17, pp.143-146. <hal-00145986>
  • J. Mateos, B.G. Vasallo, D. Pardo, J.S. Galloo, S. Bollaert, et al.. Microscopic modeling of nonlinear transport in ballistic nanodevices. IEEE Transaction on Electron Devices, 2003, 50, pp.1897-1905. <hal-00145980>
  • E. Rius, G. Prigent, H. Happy, G. Dambrine, S. Boret, et al.. Wide and narrow-band bandpass coplanar filters in the W-frequency band. IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2003, 51, pp.784-791. <hal-00145985>
  • J. Mateos, B.G. Vasallo, D. Pardo, T. Gonzales, Y. Roelens, et al.. Ballistic nanodevices for terahertz data processing : Monte Carlo simulations. Nanotechnology, Institute of Physics: Hybrid Open Access, 2003, 14, pp.117-122. <hal-00145979>
  • S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, et al.. fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate. Electronics Letters, IET, 2002, 38, pp.389-391. <hal-00147831>
  • S. Bollaert, X. Wallart, S. Lepilliet, A. Cappy, E. Jalaguier, et al.. 0.12µm transferred substrate InAlAs/InGaAs HEMTs on Silicon wafer. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2002, 25, pp.73-75. <hal-00147840>
  • B. Hackens, F. Delfosse, S. Faniel, C. Gustin, H. Boutry, et al.. Long dephasing time and high temperature conductance fluctuations in open InGaAs quantum dot. Physical Review B : Condensed matter and materials physics, American Physical Society, 2002, 66, pp.241305/1-4. <hal-00147835>
  • S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, et al.. HEMTs capability for millimeter wave applications. Annals of Telecommunications - annales des télécommunications, Springer, 2001, 56, pp.15-26. <hal-00151764>
  • F. Danneville, B. Tamen, A. Cappy, J.B. Juraver, Olivier Llopis, et al.. Low frequency noise conversion in FETs under nonlinear operation. Fluctuation and Noise Letters, World Scientific Publishing, 2001, 1, pp.L189-L195. <hal-00151766>
  • J. Mateos-Lopez, T. Gonzalez, D. Pardo, V. Hoel, H.G. Happy, et al.. Monte Carlo simulation of electronics characteristics in short channel delta-doped AllnAs/GaInAs HEMTs. Microelectronics Reliability, Elsevier, 2001, 41, pp.73-77. <hal-00151760>
  • S. Bollaert, Y. Cordier, M. Zaknoune, H.G. Happy, V. Hoel, et al.. The indium content in metamorphic InAlAs/InGaAs HEMTs on GaAs substrate : a new structure parameter. Solid-State Electronics, Elsevier, 2000, 44, pp.1021-1027. <hal-00157879>
  • J. Mateos-Lopez, T. Gonzalez, D. Pardo, V. Hoel, A. Cappy. Monte Carlo simulator for the design optimization of low-noise HEMTs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2000, 47, pp.1950-1956. <hal-00157878>
  • J. Mateos-Lopez, T. Gonzalez, D. Pardo, V. Hoel, H.G. Happy, et al.. Improved Monte Carlo algorithm for the simulation of delta-doped AlInAs/GaInAs HEMTs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2000, 47, pp.250-253. <hal-00157880>
  • A. Cappy, A. Vanoverschelde, J. Zimmermann, P. Philippe, C. Versnaeyen, et al.. Etude théorique et expérimentale du transistor à effet de champ à hétérojonction. Revue de Physique Appliquee, 1983, 18 (11), pp.719-726. <10.1051/rphysap:019830018011071900>. <jpa-00245136>
  • M.R. Friscourt, P.A. Rolland, A. Cappy, E. Constant, G. Salmer. Theoretical contribution to the design of millimeter-waves TEO's.. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 1983, 30, pp.223-229. <hal-00005245>

Autre publication2 documents

  • P.A. Rolland, M.R. Friscourt, A. Cappy. Génération de puissance à l'état solide au-dessus de 100 GHz. 1- Structures à transfert électronique. Rapport final de contrat DRET no 83/110. 1985. <hal-00005281>
  • P.A. Rolland, M.R. Friscourt, A. Cappy, G. Salmer, E. Constant. Etude théorique et expérimentale de diodes Gunn à 94 GHz. Rapport final de contrat DRET, no 79/357, Lille, France. 1982. <hal-00005271>

Ouvrage (y compris édition critique et traduction)1 document

  • H. Happy, A. Cappy. HELENA - Hemt Electrical Properties and Noise Analysis Software and user's manual (Microwave Software Library). Artech House, pp.Disk edition, 1995. <hal-00132555>

Chapitre d'ouvrage3 documents

  • S. Bollaert, A. Olivier, N. Wichmann, Y. Roelens, L. Desplanque, et al.. Dispositifs à matériaux petit gap pour électronique ultra-faible consommation. Leray J.L., Boudenot J.C., Gautier J. La micro-nano électronique, enjeux et mutations, CNRS ÉDITIONS, pp.183-186, 2009. <hal-00575772>
  • Y. Cordier, S. Bollaert, M. Zaknoune, J.M. Chauveau, A. Cappy. Metamorphic InAIAs/InGaAs HEMTs : material properties and device performance. CAI W.Z. III-V semiconductor heterostructures : physics and devices, Research Signpost, Kerala, India, pp.111-138, 2003. <hal-00132383>
  • S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H.G. Happy, et al.. HEMT's capability for millimeter-wave applications. NEY M. Millimeter waves in communication systems, Hermès, pp.15-26, 2001. <hal-00132930>