Nombre de documents

11

Publications de Abdoulwahab Adaine


Article dans une revue3 documents

Communication dans un congrès3 documents

  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. Comparative study of of PN, PIN and new Schottky based InGaN thin films solar cells. Nanotech France 2016, Jun 2016, Paris, France. <http://www.setcor.org/conferences/Nanotech-France-2016>. <hal-01326148>
  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. New Optimized InGaN Metal-IN Solar Cell. China France Second Workshop on Advanced Materials, Aug 2016, Metz, France. <http://www.lem3.fr/CFWAM-2>. <hal-01358346>
  • Abdoulwahab Adaine, Nicolas Fressengeas, Sidi Ould Saad Hamady. Simulation et Optimisation d’une cellule solaire Schottky à base d’InGaN. 22ème Colloque de Recherche Inter Écoles Centrales et CentraleSupélec (CRIEC 2016), Jun 2016, Châtenay-Malabry, Gif-sur-Yvette, France. <hal-01338308>

Poster4 documents

  • Adaine Abdoulwahab, Sidi Ould Saad Hamady, Nicolas Fressengeas. Influence of defect and polarization on efficiency of InGaN-based double-junction solar cell. Compound Semiconductor Week 2017 , May 2017, Berlin, Germany. <http://www.csw2017.org/>. <hal-01523515>
  • Adaine Abdoulwahab, Sidi Ould Saad Hamady, Nicolas Fressengeas. Multivariate numerical optimization of an InGaN-based hetero junction solar cell. The Euro-TMCS II: Theory, Modelling and Computational Methods for Semiconductors, Dec 2016, Cork, Ireland. 0001. <hal-01425924>
  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. Simulation et Optimisation d’une cellule solaire Schottky à base d’InGaN. Séminaire de l’école doctorale EMMA, Apr 2016, Nancy, France. <hal-01338242>
  • Abdoulwahab Adaine. Des panneaux Solaires Haut Rendement. Les Doctoriales de Lorraine 2016, Apr 2016, Saint-Dié-des-Vosges, France. <hal-01338318>

Pré-publication, Document de travail1 document

  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance. 2017. <hal-01523416>