Number of documents

40

Nanoélectronique sur silicium


Principaux thèmes de recherches :

 -      Depuis 2008 : Intégration 3D et caractérisation de dispositifs nanoélectroniques sur silicium : Transistors, Mémoires et Capteurs en Back-End-Off-Line CMOS.

 -      Depuis 2000 : Caractérisation électrique de dispositifs en technologie CMOS avancées.

-      1990 – 2000 : Etude des propriétés électroniques par caractérisations électriques, optiques et électro-optiques de dispositifs électroniques et opto-électroniques à base d’hétérostructures et nanostructures:


Journal articles27 documents

  • Quentin Avenas, Julien Moreau, Marion Costella, Arbi Maalaoui, Abdelkader Souifi, et al.. Performance improvement of plasmonic sensors using a combination of AC electrokinetic effects for (bio)target capture. ELECTROPHORESIS, Wiley-VCH Verlag, 2019, ⟨10.1002/elps.201800436⟩. ⟨hal-02073261⟩
  • Louis-Michel Collin, Jean-Philippe Colonna, Perceval Coudrain, Mahmood Shirazy, Séverine Chéramy, et al.. Add-On Microchannels for Hotspot Thermal Management of Microelectronic Chips in Compact Applications. IEEE Transactions on Components Packaging and Manufacturing Technology Part B, Institute of Electrical and Electronics Engineers (IEEE), 2019, 9 (3), pp.434-445. 〈10.1109/TCPMT.2018.2874241〉. 〈hal-02073358〉
  • Caroline Bonafos, Gérard Benassayag, Robin Cours, Béatrice Pécassou, Pierre-Vincent Guenery, et al.. Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories. Materials Research Express, IOP Publishing Ltd, 2018, 5, pp.015027. 〈10.1088/2053-1591/aaa30b〉. 〈hal-01701543〉
  • Getenet Tesega Ayele, Stéphane Monfray, Serge Ecoffey, Frédéric Boeuf, Jean-Pierre Cloarec, et al.. Ultrahigh-Sensitive CMOS pH Sensor Developed in the BEOL of Standard 28 nm UTBB FDSOI. IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2018, 6, pp.1026 - 1032. 〈10.1109/JEDS.2018.2861622〉. 〈hal-01895308〉
  • Edgar A.A. León Pérez, Pierre-Vincent Guenery, Oumaïma Abouzaid, Khaled Ayadi, Solene Brottet, et al.. Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line. Solid-State Electronics, Elsevier, 2018, 143, pp.20-26. ⟨hal-01948065⟩
  • Edgar Leon Perez, Pierre-Vincent Guenery, Oumaïma Abouzaid, Khaled Ayadi, Nicolas Baboux, et al.. Indium-oxide nanoparticles for Ox-RRAM in CMOS back-end-off-line. EUROSOI-ULIS , 2017, pp.47-50. 〈hal-01991816〉
  • Lama Rahhal, Getenet Tesega Ayele, Stephane Monfray, Jean-Pierre Cloarec, Benjamin Fornacciari, et al.. High sensitivity pH sensing on the BEOL of industrial FDSOI transistors. Solid-State Electronics, Elsevier, 2017, 134, pp.22-29. ⟨10.1016/j.sse.2017.05.005⟩. ⟨hal-01987313⟩
  • Edgar Leon Perez, Pierre-Vincent Guenery, O. Abouzaid, Khaled Ayadi, Solène Brottet, et al.. Indium-Oxide Nanoparticles for RRAM devices compatible with CMOS backend- off-line. Solid-State Electronics, Elsevier, 2017. ⟨hal-01701531⟩
  • Marina Labalette, S. Jeannot, S. Blonkowski, Y. Beilliard, S. Ecoffey, et al.. Fabrication of Planar Back End of Line Compatible HfOx Complementary Resistive Switches. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2017, 16 (5), pp.745-751. ⟨10.1109/TNANO.2017.2698205⟩. ⟨hal-01701505⟩
  • A. Kalboussi, Abdelkader Souifi. Interface traps effect on the charge transport mechanisms in metal oxide semiconductor structures based on silicon nanocrystals. Microelectronics Reliability, Elsevier, 2017, 78, pp.227. ⟨hal-01701534⟩
  • S. Hlali, N. Hizem, Liviu Militaru, A. Kalboussi, Abdelkader Souifi. Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics. Microelectronics Reliability, Elsevier, 2017, 75, pp.154. ⟨10.1016/j.microrel.2017.06.056⟩. ⟨hal-01701509⟩
  • D. Rechem, A. Khial, Abdelkader Souifi, F. Djeffal. Effect of annealing time on the performance of tin oxide thin films ultraviolet photodetectors. Thin Solid Films, Elsevier, 2017, 623, pp.1. 〈hal-01701510〉
  • Dominique Drouin, Gabriel Droulers, Marina Labalette, Bruno Lee Sang, Patrick Harvey-Collard, et al.. A Fabrication Process for Emerging Nanoelectronic Devices Based on Oxide Tunnel Junctions. Journal of Nanomaterials, Hindawi Publishing Corporation, 2017, 2017, pp.1 - 8. 〈10.1155/2017/8613571〉. 〈hal-01921500〉
  • S. Hlali, A. Fargi, N. Hizem, Liviu Militaru, A. Kalboussi, et al.. High temperature and voltage dependent electrical and dielectric properties of TiN/Al2O3/p-Si MIS structure. Journal of Alloys and Compounds, Elsevier, 2017, 713, pp.194. ⟨hal-01701530⟩
  • Bruno Lee Sang, Marie-Josée Gour, Maxime Darnon, Serge Ecoffey, Abdelatif Jaouad, et al.. Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma. Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2016, 34 (2), 〈10.1116/1.4936885〉. 〈hal-01701405〉
  • S. Chattbouri, M. Troudi, N. Sghaier, A. Kalboussi, Vincent Aimez, et al.. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector. Semiconductors, 2016, 50, pp.1163. 〈hal-01701401〉
  • S. Chattbouri, M. Troudi, A. Fargi, A. Kalboussi, Abdelkader Souifi. The important contribution of photo-generated charges to the silicon nanocrystals photo-charging/discharging-response time at room temperature in MOS-photodetectors. Superlattices and Microstructures, Elsevier, 2016, 94, pp.93. ⟨hal-01701404⟩
  • Yosri Ayadi, Lama Rahhal, Bertrand Vilquin, Céline Chevalier, Fabian Ambriz Vargas, et al.. Novel Concept of Gas Sensitivity Characterization of Materials Suited for Implementation in FET-Based Gas Sensors. Nanoscale Research Letters, SpringerOpen, 2016, 11 (1), ⟨10.1186/s11671-016-1687-z⟩. ⟨hal-01921508⟩
  • Y. Bargaoui, M. Troudi, N. Sghaier, N. Yacoubi, Vincent Aimez, et al.. Interface state density dependence on detection process in single electron photo-detector. Microelectronic Engineering, Elsevier, 2016, 159, pp.151. ⟨hal-01701397⟩
  • Jean-Pierre Cloarec, Céline Chevalier, Jonathan Genest, Jacques Beauvais, Hassan Chamas, et al.. pH driven addressing of silicon nanowires onto Si 3 N 4 /SiO 2 micro-patterned surfaces. Nanotechnology, Institute of Physics, 2016, 27 (29), ⟨10.1088/0957-4484/27/29/295602⟩. ⟨hal-01895315⟩
  • K. El Hajjam, Mohamed-Amine Bounouar, Nicolas Baboux, S. Ecoffey, M. Guilmain, et al.. Tunnel junction engineering for optimized Metallic Single Electron Transistor. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (9), pp.2298-3003. ⟨10.1109/TED.2015.2452575⟩. ⟨hal-01489315⟩
  • N. Abdelwahed, M. Troudi, N. Sghaier, Abdelkader Souifi. Impact of defect on I(V) instabilities observed on Ti/4H-SiC high voltage Schottky diodes. Microelectronics Reliability, Elsevier, 2015, 55, Issue: 8, pp.1169-1173. ⟨hal-01489432⟩
  • Bruno Lee Sang, Marie-Josée Gour, Abdelatif Jaouad, Serge Ecoffey, Maxime Darnon, et al.. Inductively coupled plasma etching of ultra-shallow Si3N4 nanostructures using SF6/C4F8 chemistry. Microelectronic Engineering, Elsevier, 2015, 141, pp.68 - 71. ⟨10.1016/j.mee.2015.01.014⟩. ⟨hal-01916788⟩
  • K. El Hajjam, Nicolas Baboux, Francis Calmon, Abdelkader Souifi, O. Poncelet, et al.. Highly transparent low capacitance PEALD Al2O3-HfO2 tunnel junction engineering. Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2014, 32, pp.01A132. 〈hal-01490344〉
  • Moïra Hocevar, Gilles Patriarche, Abdelkader Souifi, Michel Gendry. Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide. Journal of Crystal Growth, Elsevier, 2011, 321 (1), pp.1-7. 〈10.1016/j.jcrysgro.2011.01.067〉. 〈hal-02070640〉
  • Moïra Hocevar, Nicolas Baboux, Alain Poncet, Michel Gendry, Abdelkader Souifi. Large Improvement of Data Retention in Nanocrystal-Based Memories on Silicon Using InAs Quantum Dots Embedded in SiO2. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2009, 56 (11), pp.2657-2663. ⟨10.1109/TED.2009.2030659⟩. ⟨hal-02070630⟩
  • Moïra Hocevar, Philippe Regreny, Armel Descamps, David Albertini, Guillaume Saint-Girons, et al.. InAs nanocrystals on SiO2∕Si by molecular beam epitaxy for memory applications. Applied Physics Letters, American Institute of Physics, 2007, 91 (13), pp.133114. ⟨hal-01939910⟩

Conference papers11 documents

  • Quentin Struss, Perceval Coudrain, Jean-Philippe Colonna, Abdelkader Souifi, Christian Gontrand, et al.. Theoretical Study of Miniaturization of a Silicon Vapor Chamber for Compact Microelectronics. THERMINIC 2018, Sep 2018, Stockholm, Sweden. 〈hal-02073165〉
  • Quentin Avenas, Julien Moreau, Marion Costella, Marie Frénéa-Robin, Julien Marchalot, et al.. Improvement in the performances of a plasmonic sensor using a combination of electrohydrodynamical effects. Dielectrophoresis, Jul 2018, Surrey, United Kingdom. 〈http://diel2018.iopconfs.org/801280〉. 〈hal-01946302〉
  • Getenet Tesega Ayele, Stephane Monfray, Serge Ecoffey, Frédéric Boeuf, Romain Bon, et al.. Ultrahigh-Sensitive and CMOS Compatible ISFET Developed in BEOL of Industrial UTBB FDSOI. 2018 IEEE Symposium on VLSI Technology, Jun 2018, Honolulu, United States. IEEE, pp.97-98. 〈hal-02047342〉
  • Edgar Leon Perez, Pierre-Vincent Guenery, O. Abouzaid, Khaled Ayadi, Nicolas Baboux, et al.. Indium-oxide nanoparticles for Ox-RRAM in CMOS back-end-off-line. EUROSOI-ULIS, 2017, Jan 2017, Athens, Greece. 2017. 〈hal-01701469〉
  • Quentin Struss, Perceval Coudrain, Jean-Philippe Colonna, Abdelkader Souifi, Christian Gontrand, et al.. Embedded Vapor Chamber in Microelectronics Devices. JNRDM 2017, Nov 2017, Strasbourg, France. 〈hal-02097246〉
  • Getenet Tesega Ayele, Stéphane Monfray, Frédéric Boeuf, Jean-Pierre Cloarec, Serge Ecoffey, et al.. Development of ultrasensitive extended-gate Ion-sensitive-field-effect-transistor based on industrial UTBB FDSOI transistor. ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC), Sep 2017, Leuven, Belgium. IEEE, 〈10.1109/ESSDERC.2017.8066642〉. 〈hal-01895310〉
  • Marina Labalette, S. Ecoffey, S. Jeannot, Abdelkader Souifi, D. Drouin. HfOx complementary resistive switches. IEEE Nanotechnology Materials and Devices Conference (NMDC), 2016, Jan 2016, Toulouse, France. 2016. 〈hal-01701384〉
  • Marina Labalette, Serge Ecoffey, Simon Jeannot, Abdelkader Souifi, Dominique Drouin. HfOx complementary resistive switches. 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. IEEE, pp.1-2, 〈10.1109/NMDC.2016.7777083〉. 〈hal-02074283〉
  • D. Drouin, G. Droulers, Marina Labalette, B. Sang, P. Harvey-Collard, et al.. The nanodamascene process: a versatile fabrication technique for nanoelectronic applications. IEEE NANO 2015 15th INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, 2015, ROME, Italy. 2015. 〈hal-01489607〉
  • D. Drouin, M. A-Bounouar, G. Droulers, Marina Labalette, M. Pioro-Ladriere, et al.. 3D microelectronic with BEOL compatible devices. 2015 IEEE 33rd VLSI TEST SYMPOSIUM (VTS),, 2015, Napa, CA,, United States. 2015. 〈hal-01489310〉
  • Georges Bremond, Philippe Ferrandis, Abdelkader Souifi, Antoine Ronda, Isabelle Berbezier. Optical properties of self-organised SSMBE and GSMBE Ge nanostructures grown on SiGe template layer on Si (118). MRS Fall Meeting, Symposium P, Nov 2000, Boston, United States. 〈hal-01616510〉

Book sections2 documents

  • Francisco Palazon, Pedro Rojo Romeo, Ali Belarouci, Céline Chevalier, Hassan Chamas, et al.. Site-Selective Self-Assembly of Nano-Objects on a Planar Substrate Based on Surface Chemical Functionalization. Nanopackaging: From Nanomaterials to the Atomic Scale. Advances in Atom and Single Molecule Machines. Springer, Cham, pp.93-112, 2015, 〈10.1007/978-3-319-21194-7_7〉. 〈hal-02060023〉
  • Francisco Palazon, Pedro Rojo Romeo, Ali Belarouci, Céline Chevalier, Hassan Chamas, et al.. Site-selective self-assembly of nano-objects on a planar substrate based on surface chemical functionalization. Christian Joachim. Advances in Atom and Single Molecule Machines, 2015. 〈hal-01489585〉