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45 résultats
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Cellule monolithique de circuit intégré et notamment cellule de commutation monolithiqueFrance, N° de brevet: FR2981200A1. 2011
Brevet
hal-04093102v1
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Analysis of the three-chip switching cells approach for integrated multi-phase power converter combining monolithic and hybrid techniques: Experimental validation on SiC and Si power assembly prototypesPower Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on., Sep 2015, Genève, Switzerland. ⟨10.1109/EPE.2015.7311711⟩
Communication dans un congrès
hal-01230267v1
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Monolithically integrated switching cells suitable for high density power conversion11th International Seminar on Power Semiconductors, Prague, Czech Republic, Aug 2012, Prague, Czech Republic. pp.222-229
Communication dans un congrès
hal-03937614v1
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Puces multipôles compactes à RC-IGBT pour l'intégration fractionnée et optimale de cellules de commutation. Evaluation des performances électriques sur PCB.Symposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361635v1
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Realisation and characterisation of compact generic IGBT-based multiphase power converters using the two-chip multi-pole integration approach4th Micro/Nano-Electronics Packaging and Assembly, Design and Manufacturing Forum (MiNaPAD Forum 2015), April 21-23 2015, Grenoble (FRANCE), Apr 2015, Grenoble, France
Communication dans un congrès
hal-01234269v1
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Monolithic Multi-poles Converter Device for Medium Power ApplicationsEuropean Power Electronics Conference and Application, EPE-ECCE, Aug 2014, Lappeenranta, Finland. pp.1-7, ⟨10.1109/EPE.2014.6911021⟩
Communication dans un congrès
hal-03937646v1
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A single-chip integration approach of switching cells suitable for medium power applications.MIXDES 2013 : 20th International Conference 'Mixed Design of Integrated Circuits and Systems' Gdynia, Poland, Jun 2013, Gdynia, Poland. pp.421-5
Communication dans un congrès
hal-03937619v1
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Structure bipolaire bidirectionnelle en courant et en tension sur silicium (BipAC)Symposium de Génie Électrique 2014, Jul 2014, Cachan, France
Communication dans un congrès
hal-01065263v1
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Puces multipôles de puissance intégrant de manière monolithique des cellules de découpage asymétriques et modules de puissance multi-phase utilisant la ou plusieurs desdites puces multipôlesFrance, N° de brevet: FR3060849A1. 2016
Brevet
hal-04093107v1
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Tension de seuil réduite pour composants de puissance à grille: Intérêts et conséquences.Électronique de Puissance du Futur, Jun 2010, Saint-Nazaire, France. 4p
Communication dans un congrès
hal-00498857v1
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Complementary multi-terminal power chips integrating ultimate wire-bond-less switching cells for compact Si-power convertersEPE’19-ECCE Europe, Sept. 2-6, 2019, Geneva (ITALIA), 2019, Geneva, Italy
Communication dans un congrès
hal-03937618v1
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Structure bidirectionnelle en courantRevue internationale de génie électrique, Rige, 2007, 10 (5), pp.553-565
Article dans une revue
hal-03796627v1
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Multi-switch Si-chip structures and on-substrate packaging techniques for improving the electrical performance of power modules15th European Conference on Power Electronics and Applications, Lille, France, Sep 2013, Lille, France. ⟨10.1109/EPE.2013.6634426⟩
Communication dans un congrès
hal-03937620v1
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Monolithic Complementary Multi-terminal RC-IGBT Chips for Compact Multi-phase Power Converter25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES 2018), Jun 2018, Gdynia, Poland. 5p., ⟨10.23919/MIXDES.2018.8436866⟩
Communication dans un congrès
hal-01930709v1
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Amélioration des performances du thyristor à l'état bloqué en haute températureConférence Electronique de Puissance du Futur (EPF 2012), Jul 2012, BORDEAUX, France. 4 p
Communication dans un congrès
hal-01005931v1
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩
Communication dans un congrès
hal-04203163v1
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical IntegrationIEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
Communication dans un congrès
hal-04147862v1
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Mixed monolithic-hybrid integration of multiphase power converter: preliminary evaluation of the 3-chip integration conceptESARS ITEC 2016 - 4th International Conference on Electrical Systems for Aircraft, Railway, Ship propulsion and Road Vehicles & International Transportation Electrification Conference, Nov 2016, Toulouse, France
Communication dans un congrès
hal-01407911v1
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Fail-safe switching-cells architectures based on monolithic on-chip fuse22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon, France. pp.P.1-P.10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215608⟩
Communication dans un congrès
hal-02980784v1
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Convertisseur électronique de puissance utilisant deux puces multi-pôles de puissance à substrats complémentaires N et PFrance, N° de brevet: FR3050571A1. 2016
Brevet
hal-04093106v1
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A generic snapback free Reverse Conducting IGBT structure suitable for monolithic switching cells integrationEuropean Power Electronics Conference and Application, EPE-ECCE, 26 -28 août 2014, Lappeenranta (FINLAND), 2014, Lappeenranta, Finland
Communication dans un congrès
hal-03937647v1
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Fast cut-off, low I 2 T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switchMicroelectronics Reliability, 2021, pp.114240. ⟨10.1016/j.microrel.2021.114240⟩
Article dans une revue
hal-03381413v1
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Switching Cells and Power Devices - An IntroductionECPE Tutorials, "Power Circuits for Clean Switching and Low Losses", 17 – 18 October 2018, INSA de Lyon, Campus LyonTech, La Doua Villeurbanne/Lyon, France, Oct 2018, Lyon, France
Communication dans un congrès
hal-02342948v1
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Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ( ESREF 2018 ), Oct 2018, Aalborg, Denmark. pp.598-603, ⟨10.1016/j.microrel.2018.07.026⟩
Communication dans un congrès
hal-02180574v1
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Towards innovative hybrid and ultra-compact switching-cellsPower Circuits for Clean Switching and Low Losses, Oct. 17-18, 2018, Lyon (FRANCE), 2018, Lyon, France
Communication dans un congrès
hal-04157349v1
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A generic Reverse Conducting IGBT structure for monolithic switching cells integrationPower Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on., Aug 2014, Lappeenranta, Finland. ⟨10.1109/EPE.2014.6910977⟩
Communication dans un congrès
hal-01234236v1
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Three multi-terminal silicon power chips for an optimized monolithic integration of switching cells: validation on an H-bridge inverterIEEE Transactions on Electron Devices, 2019, 66 (12), pp.5238 - 5245. ⟨10.1109/TED.2019.2946749⟩
Article dans une revue
hal-02334407v1
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Impact of a backside Schottky contact on the thyristor characteristics at high temperatureInternational Seminar on Power Semiconductors (ISPS 2012), Aug 2012, Pragues, Czech Republic. pp.131 à 136
Communication dans un congrès
hal-01004495v1
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Exploring potentials and performance of two circuit architectures to develop a new integrated switch dedicated to self-switching power convertersEPE 2009: 13th European Conference on Power Electronics and Applications Conference, Barcelone,SPAIN, Sep 2009, Barcelone, Spain
Communication dans un congrès
hal-03937498v1
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters20th International Conference on Silicon Carbide and Related Materials (ICSCRM) - ICSCRM 2023, Naples University - Federico II, Sep 2023, Sorrento, Italy
Communication dans un congrès
hal-04221605v1
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