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Dual-port reflectometry technique: Charge identification in nanoscaled single-electron transistors

 Alexei O. Orlov , P. Fay , G. Snider , Xavier Jehl , Sylvain Barraud , et al.
IEEE Nanotechnology Magazine, 2015, 9 (2), pp.24-32. ⟨10.1109/mnano.2015.2409411⟩
Article dans une revue cea-01734601v1
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Charge Detection in an Array of CMOS Quantum Dots

 Emmanuel Chanrion , David Niegemann , Benoit Bertrand , Cameron Spence , Baptiste Jadot , et al.
Physical Review Applied, 2020, 14 (2), pp.024066. ⟨10.1103/PhysRevApplied.14.024066⟩
Article dans une revue hal-02996335v1
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19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot

 Loick Le Guevel , Gerard Billiot , Xavier Jehl , Silvano de Franceschi , Marcos Zurita , et al.
2020 IEEE International Solid- State Circuits Conference - (ISSCC), Feb 2020, San Francisco, United States. pp.306-308, ⟨10.1109/ISSCC19947.2020.9063090⟩
Communication dans un congrès hal-02986737v1

Cryogenic current-steering DAC for biasing of quantum dots

 Adrien Morel , Marcos Zurita , L. Le Guevel , Gerard Billiot , Xavier Jehl , et al.
WE-Heraeus-Seminar: Advances in Scalable Hardware Platforms for Quantum Computing, Jan 2021, Online, Germany
Communication dans un congrès hal-03348334v1

Cryogenic operation of SOI electron pumps and ring oscillators

 P. Clapera , X. Jehl , L. Hutin , S. Barraud , A. Valentian , et al.
2016 IEEE Silicon Nanoelectronics Workshop (SNW), Jun 2016, Honolulu, France. pp.182-185
Communication dans un congrès hal-02018085v1

Design and Operation of CMOS-Compatible Electron Pumps Fabricated With Optical Lithography

 P. Clapera , J. Klochan , R. Lavieville , S. Barraud , L. Hutin , et al.
IEEE Electron Device Letters, 2017, 38 (4), pp.414-417
Article dans une revue hal-02017921v1

Pauli spin blockade in CMOS double quantum dot devices

 D. Kotekar-Patil , A. Corna , R. Maurand , A. Crippa , A. Orlov , et al.
physica status solidi (b), 2017, 254 (3), pp.1600581
Article dans une revue hal-02005908v1
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Spin-Valley Coupling Anisotropy and Noise in CMOS Quantum Dots

 Cameron Spence , Bruna Cardoso Paz , Bernhard Klemt , Emmanuel Chanrion , David Niegemann , et al.
Physical Review Applied, 2022, 17 (3), pp.034047. ⟨10.1103/PhysRevApplied.17.034047⟩
Article dans une revue hal-03749553v1
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Control of single spin in CMOS devices and its application for quantum bits.

 Romain Maurand , Dharam Kotekar-Patil , Andrea Corna , Heorhii Bohuslavskyi , Alessandro Crippa , et al.
Simon Deleonibus. Emerging Devices for Low-Power and High-Performance Nanosystems: Physics, Novel Functions, and Data Processing, 3, Taylor & Francis, pp.201-230, 2018, Pan Stanford Series on Intelligent Nanosystems, 9789814800112
Chapitre d'ouvrage hal-02024444v1

Patterning Strategy for Monoelectronic Device Platform in a Complementary Metal Oxide Semiconductor Technology

 S. Pauliac-Vaujour , R. Wacquez , C. Vizioz , T. Chevolleau , M. Pierre , et al.
Japanese Journal of Applied Physics, 2011, 50 (6), pp.06GF15-06GF15-5. ⟨10.1143/JJAP.50.06GF15⟩
Article dans une revue hal-00647505v1

Radio Frequency Reflectometry of Single-Electron Box Arrays for Nanoscale Voltage Sensing Applications

 Thomas Zirkle , Matthew Filmer , Jonathan Chisum , Alexei Orlov , Eva Dupont-Ferrier , et al.
Applied Sciences, 2020, 10 (24), pp.8797. ⟨10.3390/app10248797⟩
Article dans une revue hal-03749559v1

Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector

 Matias Imanol Urdampilleta , L. Hutin , B. Jadot , B. Bertrand , H. Bohuslavskyi , et al.
2017 Symposium on VLSI Technology, Jun 2017, Kyoto, Japan. ⟨10.23919/VLSIT.2017.7998163⟩
Communication dans un congrès hal-02018160v1

Dopant-controlled single-electron pumping through a metallic island

 Tobias Wenz , Frank Hohls , Xavier Jehl , M. Sanquer , Sylvain Barraud , et al.
Applied Physics Letters, 2016, 108 (21), pp.213107
Article dans une revue hal-02009379v1

Coherent Coupling of Two Dopants in a Silicon Nanowire Probed by Landau-Zener-Stückelberg Interferometry

 E. Dupont-Ferrier , B. Roche , B. Voisin , X. Jehl , R. Wacquez , et al.
Physical Review Letters, 2013, 110 (13)
Article dans une revue hal-02009831v1

350K operating silicon nanowire single electron/hole transistors scaled down to 3.4nm diameter and 10nm gate length

 R. Lavieville , S. Barraud , A. Corna , X. Jehl , M. Sanquer , et al.
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, France. pp.9-12
Communication dans un congrès hal-02018072v1

Gate-based high fidelity spin readout in a CMOS device

 Matias Imanol Urdampilleta , David Niegemann , Emmanuel Chanrion , Baptiste Jadot , Cameron Spence , et al.
Nature Nanotechnology, 2019, 14, pp.737-741. ⟨10.1038/s41565-019-0443-9⟩
Article dans une revue hal-02164172v1

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

 Leo Bourdet , Louis Hutin , Benoit Bertrand , Andrea Corna , Heorhii Bohuslavskyi , et al.
IEEE Transactions on Electron Devices, 2018, 65 (11), pp.5151-5156. ⟨10.1109/TED.2018.2870115⟩
Article dans une revue hal-01980852v1

Development of spin quantum bits in SOI CMOS technology

 B. Bertrand , L. Hutin , L. Bourdet , A. Corna , B. Jadot , et al.
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Jul 2018, Cork, Ireland. pp.1-3, ⟨10.1109/NANO.2018.8626273⟩
Communication dans un congrès hal-02142072v1

Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature

 Romain Lavieville , François Triozon , Sylvain Barraud , Andrea Corna , Xavier Jehl , et al.
Nano Letters, 2015, 15 (5), pp.2958-2964. ⟨10.1021/nl504806s⟩
Article dans une revue hal-01615209v1
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Strongly Correlated Charge Transport in Silicon Metal-Oxide-Semiconductor Field-Effect Transistor Quantum Dots

 M. Seo , P. Roulleau , P. Roche , D. c. Glattli , M. Sanquer , et al.
Physical Review Letters, 2018, 121, pp.027701. ⟨10.1103/PhysRevLett.121.027701⟩
Article dans une revue hal-01872901v1

Design and Cryogenic Operation of a Hybrid Quantum-CMOS Circuit

 Paul Clapera , Soumaya Ray , Xavier Jehl , M. Sanquer , A. Valentian , et al.
Physical Review Applied, 2015, 4 (4), pp.044009. ⟨10.1103/PhysRevApplied.4.044009⟩
Article dans une revue hal-01588270v1

A single hole spin with enhanced coherence in natural silicon

 N. Piot , B. Brun , V. Schmitt , S. Zihlmann , V. Michal , et al.
Nature Nanotechnology, 2022, 17, pp.1072-1077. ⟨10.1038/s41565-022-01196-z⟩
Article dans une revue hal-03810390v1

Low-power transimpedance amplifier for cryogenic integration with quantum devices

 L. Le Guevel , G. Billiot , B. Cardoso Paz , M. Tagliaferri , S. de Franceschi , et al.
Applied Physics Reviews, 2020, 7 (4), pp.041407. ⟨10.1063/5.0007119⟩
Article dans une revue hal-03047484v1

Cryogenic Current Steering DAC With Mitigated Variability

 Marcos Zurita , Loick Le Guevel , Gerard Billiot , Adrien Morel , Xavier Jehl , et al.
IEEE Solid-State Circuits Letters, 2020, 3, pp.254-257. ⟨10.1109/LSSC.2020.3013443⟩
Article dans une revue hal-02986763v1
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Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

 H. Bohuslavskyi , S. Barraud , V. Barral , M. Cassé , L. Le Guevel , et al.
IEEE Transactions on Electron Devices, 2018, 65 (9), pp.3682 - 3688. ⟨10.1109/TED.2018.2859636⟩
Article dans une revue hal-01887151v1

Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology

 Sylvain Barraud , Romain Lavieville , Louis Hutin , Heorhii Bohuslavskyi , Maud Vinet , et al.
Technologies , 2016, 4 (1), pp.10
Article dans une revue hal-02017930v1

Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

 Heorhii Bohuslavskyi , Dharmraj Kotekar-Patil , Romain Maurand , Andrea Corna , Sylvain Barraud , et al.
Applied Physics Letters, 2016, 109 (19), pp.193101. ⟨10.1063/1.4966946⟩
Article dans une revue cea-01849344v1

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

 H. Bohuslavskyi , A. G. M. Jansen , S. Barraud , V. Barral , M. Cassé , et al.
IEEE Electron Device Letters, 2019, 40 (5), pp.784-787. ⟨10.1109/LED.2019.2903111⟩
Article dans une revue hal-02121161v1

Edge-states at the onset of a silicon trigate nanowire FET

 B. Voisin , V.-H. Nguyen , J. Renard , X. Jehl , S. Barraud , et al.
2014 Silicon Nanoelectronics Workshop (SNW), Jun 2014, Honolulu, France. pp.1-2
Communication dans un congrès hal-02138868v1

Harnessing Si CMOS technology for quantum information

 L. Hutin , B. Bertrand , R. Maurand , Matias Imanol Urdampilleta , B. Jadot , et al.
2017 Silicon Nanoelectronics Workshop (SNW), Jun 2017, Kyoto, Japan. ⟨10.23919/SNW.2017.8242337⟩
Communication dans un congrès hal-02018148v1
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