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Facilities and methods for radiation testing: Laser testing

 V. Pouget
IEEE Nuclear and Space Radiation Effects Conference, Short Course 2014, 2014, Paris, France
Communication dans un congrès hal-01932598v1

Using the SEEM Software for Laser SET Testing and Analysis

 V. Pouget , P. Fouillat , D. Lewis
Radiation Effects on Embedded Systems, Springer, pp.259-268, 2007
Chapitre d'ouvrage hal-00206320v1

Laser SEE Testing and Analysis Case Studies

 Vincent Pouget , Pascal Fouillat , Dean Lewis
School on the Effects of Radiation on Embedded Systems for Space Application (SERESSA), 2005, Manaus, Brazil
Communication dans un congrès hal-00401316v1

Fundamentals and recent developments on laser testing at the IMS laboratory

 V. Pouget
RALFDAY, 2007, Suresnes, France
Communication dans un congrès hal-00401382v1

Test de circuits intégrés par faisceau laser pulsé

 Dean Lewis , Vincent Pouget , Frédéric Darracq , Hervé Lapuyade , Pascal Fouillat
Colloque Interdisciplinaire en Instrumentation (C2I), 2001, France. pp.1
Communication dans un congrès hal-00185412v1

Elaboration of a New Pulsed Laser System for SEE Testing

 Vincent Pouget , T. Calin , Hervé Lapuyade , Dean Lewis , Pascal Fouillat , et al.
4th IEEE International On Line Testing Workshop, 1998, Italy. pp.1
Communication dans un congrès hal-00185415v1

Electrical Modeling for Laser Testing with Different Pulse Durations

 Alexandre Douin , Vincent Pouget , Dean Lewis , Pascal Fouillat , Phillipe Perdu
11th IEEE International On Line Testing Symposium, Jul 2005, Saint Raphael, France. pp.9-13
Communication dans un congrès hal-00397739v1

Influence of Laser Pulse Duration in Single Event Upset Testing

 Alexandre Douin , Vincent Pouget , Frédéric Darracq , Dean Lewis , Pascal Fouillat , et al.
8th European Conference on Radiation and its Effects on Components and Systems (RADECS) 2005, Sep 2005, Cap d'Agde, France. pp.1-7
Communication dans un congrès hal-00397942v1

Scan-based ATPG diagnostic and optical techniques combination: A new approach to improve accuracy of defect isolation in functional logic failure

 A. Machouat , G. Haller , V. Goubier , Dean Lewis , Vincent Pouget , et al.
15th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Jul 2008, Singapour, Singapore. pp.1-5
Communication dans un congrès hal-00398000v1

Failure mechanisms in deep sub-micron technologies

 Vincent Pouget
Latin America Test Workshop, 2009, Buzios, Brazil
Communication dans un congrès hal-00398047v1

Dynamic Behavior of a Chemical Sensor for Real-Time Measurement of Humidity Variations in Human Breath

 Angélique Tetelin , Vincent Pouget , Jean-Luc Lachaud , Claude Pellet
IEEE Transactions on Instrumentation and Measurement, 2004, 53, pp.1
Article dans une revue hal-00183110v1

Structural Analysis of Integrated Circuits Using Scanning Laser Ultrasonics

 Grégory Andriamonje , Vincent Pouget , Yves Ousten , Dean Lewis , Bernard Plano , et al.
IEEE International Reliability Physics Symposium (IRPS), 2004, United States. pp.1
Communication dans un congrès hal-00182908v1

Structural Analysis of Integrated Circuits Using Scanning Laser Ultrasonics

 Grégory Andriamonje , Vincent Pouget , Yves Ousten , Dean Lewis , Bernard Plano , et al.
IEEE International Reliability Physics Symposium (IRPS), 2004, United States. pp.1
Communication dans un congrès hal-00182909v1

Front side and Backside OBIT Mappings applied to Single Event Transient Testing

 Dean Lewis , Vincent Pouget , Thomas Beauchene , Hervé Lapuyade , Pascal Fouillat , et al.
Microelectronics Reliability, 2001, 41, pp.1
Article dans une revue hal-00185401v1

Optimizing pulsed OBIC technique for ESD defect localization

 Fabien Essely , Nicolas Guitard , Frédéric Darracq , Vincent Pouget , Marise Bafleur , et al.
13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Jul 2006, Singapour, Singapore. pp.270-275, 10.1109/IPFA.2006.251044, ⟨10.1109/IPFA.2006.251044⟩
Communication dans un congrès hal-00204574v1
Image document

Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology

 A Sarafianos , R Llido , O Gagliano , V Serradeil , Mathieu Lisart , et al.
38th International Symposium for Testing and Failure Analysis, ISTFA 2012, Nov 2012, Phoenix, United States
Communication dans un congrès emse-01130636v1

Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

 V.F Cavrois , Vincent Pouget , D. Mcmorrow , J.R Schwank , N. Fel , et al.
IEEE Transactions on Nuclear Science, 2008, 55 (6), pp.2842-2853
Article dans une revue hal-00397995v1
Image document

Performances VS Reliability: how to exploit Approximate Computing for Safety-Critical applications

 Gennaro Severino Rodrigues , Fernanda Lima Kastensmidt , Vincent Pouget , Alberto Bosio
IOLTS: International On-Line Testing Symposium, Jul 2018, Platja d'Aro, Spain. pp.291-294, ⟨10.1109/IOLTS.2018.8474122⟩
Communication dans un congrès hal-02095642v1

Impact of Negative Bias Temperature Instability on the Single-Event Upset Threshold of a 65nm SRAM cell

 I. El Moukhtari , V. Pouget , C. Larue , Frédéric Darracq , D. Lewis , et al.
ESREF 2013, 2013, Arcachon, France
Communication dans un congrès hal-01935692v1

A physical approach on SCOBIC investigation in VLSI

 T. Beauchêne , D. Lewis , F. Beaudoin , V. Pouget , P. Perdu , et al.
Microelectronics Reliability, 2003, 43 (1), pp.173 - 177. ⟨10.1016/S0026-2714(02)00282-2⟩
Article dans une revue istex hal-01887645v1

INVESTIGATION OF SINGLE-EVENT TRANSIENTS IN FAST INTEGRATED CIRCUITS WITH A PULSED LASER

 P. Fouillat , V. Pouget , D. Lewis , S. Buchner , D. Mcmorrow
International Journal of High Speed Electronics and Systems, 2004, 14 (02), pp.327 - 339. ⟨10.1142/S0129156404002387⟩
Article dans une revue hal-01887658v1

Heavy Ion SEU Cross Section Calculation Based on Proton Experimental Data, and Vice Versa

 Frédéric Wrobel , Antoine Touboul , Vincent Pouget , Luigi Dilillo , Robert Ecoffet , et al.
IEEE Transactions on Nuclear Science, 2014, 61 (6), pp.3564-3571. ⟨10.1109/TNS.2014.2368613⟩
Article dans une revue lirmm-01234461v1

The Power Law Shape of Heavy Ions Experimental Cross Section

 Frédéric Wrobel , Antoine Touboul , Vincent Pouget , Luigi Dilillo , Eric Lorfèvre , et al.
IEEE Transactions on Nuclear Science, 2016, 64 (1), pp.427-433. ⟨10.1109/TNS.2016.2608004⟩
Article dans une revue lirmm-01382480v1

Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL

 S. Buchner , Nicolas Jean-Henri Roche , J. Warner , D. Mcmorrow , F. Miller , et al.
IEEE Transactions on Nuclear Science, 2012, 59 (4), pp.988-998. ⟨10.1109/TNS.2012.2201956⟩
Article dans une revue hal-01633618v1

Investigation of Single-Event Transients in Linear Voltage Regulators

 F. Irom , T.F Miyahira , P. Adell , J.S Laird , B. Conder , et al.
IEEE Transactions on Nuclear Science, 2008, 55 (6), pp.3352-3359
Article dans une revue hal-00397996v1

Building the electricalmodel of the PhotoelectricLaserStimulation of a NMOS transistor in 90 nm technology

 Sarafianos Alexandre , R. Llido , Jean-Max Dutertre , Olivier Gagliano , Valérie Serradeil , et al.
38th International Symposium for Testing and Failure Analysis, Nov 2012, Phoenix, United States. pas encore paru
Communication dans un congrès emse-00742629v1

Analysis of the charge sharing effect in the SET sensitivity of bulk 45nm standard cell layouts under heavy ions

 Ygor Quadros de Aguiar , Frédéric Wrobel , Jean-Luc Autran , Paul Leroux , Frédéric Saigné , et al.
29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Oct 2018, Aalborg, Denmark
Communication dans un congrès hal-02086379v1
Image document

Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions

 Y.Q. Aguiar , Frédéric Wrobel , Jean-Luc Autran , P. Leroux , F. Saigné , et al.
Microelectronics Reliability, 2018, 88-90, pp.920-924. ⟨10.1016/j.microrel.2018.07.018⟩
Article dans une revue hal-02089778v1

Analysis of the Single-Event Latch-up Cross Section of a 16nm FinFET System-on-Chip using Backside Single-Photon Absorption Laser Testing and Correlation with Heavy Ion Data

 Matthieu Fongral , Vincent Pouget , Frédéric Saigné , Marine Ruffenach , Jérôme Carron , et al.
European Conference on Radiation and its Effects on Components and Systems (RADECS), Sep 2023, Toulouse, France
Communication dans un congrès hal-04308603v1
Image document

Single-Event Latchup sensitivity: Temperature effects and the role of the collected charge

 S. Guagliardo , Frédéric Wrobel , Ygor Quadros de Aguiar , Jean-Luc Autran , Paul Leroux , et al.
Microelectronics Reliability, 2021, 119, ⟨10.1016/j.microrel.2021.114087⟩
Article dans une revue hal-03187849v1
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