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Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)

 Marco Vettori , Alexandre Danescu , Xin Guan , P. Regreny , José Penuelas , et al.
Nanoscale Advances, 2019, 1 (11), pp.4433-4441. ⟨10.1039/c9na00443b⟩
Article dans une revue hal-03770901v1

Vers l'intégration monolithique d'hétérostructures et de nanostructures III-V et Ge sur silicium pour la microélectronique et l'optoélectronique

 G. Saint-Girons , M. Gendry , H. Dumont , P. Regreny , J. Cheng , et al.
Leray J.L., Boudenot J.C., Gautier J. La micro-nano électronique, enjeux et mutations, CNRS ÉDITIONS, pp.179-182, 2009
Chapitre d'ouvrage hal-00575787v1

Capping and decapping GaAs nanowires with As for preventing oxidation and for epitaxial shell growth

 Xin Guan , Jeanne Becdelievre , Abdennacer Benali , Claude Botella , Geneviève Grenet , et al.
8èmes Entretiens pour la recherche GEC-Beihang, 2015, Marseille, France
Communication dans un congrès hal-01489620v1

Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers

 G. Hollinger , R. Skheyta-Kabbani , Michel Gendry
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1994, 49 (16), pp.11159-11167. ⟨10.1103/PhysRevB.49.11159⟩
Article dans une revue hal-02200446v1

High electron mobility in pseudomorphic modulation‐doped In 0.75 Ga 0.25 As/InAlAs heterostructures achieved with growth interruptions

 V. Drouot , Michel Gendry , C. Santinelli , P. Viktorovitch , G. Hollinger , et al.
Journal of Applied Physics, 1995, 77 (4), pp.1810-1812. ⟨10.1063/1.358879⟩
Article dans une revue hal-02119270v1

Intraband polaron dynamics of excited carriers in InAs ∕ In x Al 1 − x As quantum dots

 G. Bahir , E. Finkman , F. Fossard , F.H. Julien , J. Brault , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 71 (7), ⟨10.1103/PhysRevB.71.075327⟩
Article dans une revue hal-02089715v1

Nanowire-based telecom-band light sources monolithically grown on silicon

 Nicolas Chauvin , Iuliia Dudko , Ali Jaffal , Thomas Dursap , Anne Lamirand , et al.
German-French-Korean Workshop on Nanophotonics 2023, Oct 2023, Würzburg, Germany
Communication dans un congrès hal-04233525v1

Efficient single InAs/InP quantum dot-nanowire source monolithically grown on silicon

 Ali Jaffal , Philippe Regreny , Gilles Patriache , Michel Gendry , Nicolas Chauvin
Journées Nano, Micro et Optoélectronique 2018, Jun 2018, Cap Esterel - Agay, France
Poster de conférence hal-01850711v1

InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 [micro sign]m

 Christelle Monat , C. Seassal , X. Letartre , Pierre Viktorovich , P. Regreny , et al.
Electronics Letters, 2001, 37 (12), pp.764. ⟨10.1049/el:20010543⟩
Article dans une revue hal-02172220v1

Two-dimensional hexagonal-shaped microcavities formed in a two-dimensional photonic crystal on an InP membrane

 Christelle Monat , C. Seassal , X. Letartre , P. Regreny , Michel Gendry , et al.
Journal of Applied Physics, 2003, 93 (1), pp.23-31. ⟨10.1063/1.1528273⟩
Article dans une revue hal-02091285v1

Optical simulation of absorption in tandem solar cells based on III-V nanowires on silicon

 Anne Kaminski-Cachopo , V. Maryasin , D. Bucci , J. Michallon , A. Benali , et al.
7th Photovoltaic Technical Conference (PVTC 2016), May 2016, Marseille, France
Communication dans un congrès hal-01489057v1

Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension

 S.K. Krawczyk , Michel Gendry , C. Klingelhöfer , T. Venet , M. Buchheit , et al.
Materials Science and Engineering: B, 1996, 42 (1-3), pp.146-152. ⟨10.1016/S0921-5107(96)01696-0⟩
Article dans une revue istex hal-02197264v1

In situ XPS investigation of indium surface segregation for Ga1−xInxAs and Al1−xInxAs alloys grown by MBE on InP(001)

 G. Grenet , E. Bergignat , Michel Gendry , M. Lapeyrade , G. Hollinger
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1996, 352-354, pp.734-739. ⟨10.1016/0039-6028(95)01246-X⟩
Article dans une revue istex hal-02197160v1

Contrôle de la phase cristalline de nanofils de GaAs auto- catalysés par diffraction RHEED

 Thomas Dursap , Marco Vettori , Claude Botella , Philippe Regreny , Alexandre Danescu , et al.
Journées Surfaces & Interfaces (JSI ), Jan 2019, Nancy, France
Communication dans un congrès hal-02073016v1

Growth optimization and characterization of regular arrays of GaAs/AlGaAs core/shell nanowires for tandem solar cells on silicon

 M. Vettori , V. Piazza , A. Cattoni , A. Scaccabarozzi , G. Patriarche , et al.
Nanotechnology, 2019, 30 (8), pp.084005. ⟨10.1088/1361-6528/aaf3fe⟩
Article dans une revue hal-01969073v1
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Highly strained InxGa1-x As/InP quantum wells grown by solid source MBE for applications in the 2-2.3 µm spectral range

 S. Jourba , Michel Gendry , P. Regreny , G. Hollinger
Journal of Crystal Growth, 1999, 201-202, pp.1101-1104. ⟨10.1016/S0022-0248(98)01535-8⟩
Article dans une revue istex hal-02194234v1

Growth of hybrid GaAs core / shell nanowires

 Xin Guan , Jeanne Becdelievre , Guillaume Saint-Girons , Romain Bachelet , Philippe Regreny , et al.
GDR PULSE, 2016, Marseille, France
Communication dans un congrès hal-01489098v1
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Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP 001

 J. Brault , Michel Gendry , O. Marty , M. Pitaval , J. Olivares , et al.
Applied Surface Science, 2000, 162, pp.584-589
Article dans une revue hal-02190195v1

Heteroepitaxial growth of strained and relaxed layers of InAs on InP investigated by RHEED and HRTEM

 G. Hollinger , Michel Gendry , J.L. Duvault , C. Santinelli , P. Ferret , et al.
Applied Surface Science, 1992, 56-58, pp.665-671. ⟨10.1016/0169-4332(92)90319-S⟩
Article dans une revue istex hal-02200829v1

Nanoscale analyses of axial and radial III-V nanowires for solar cells

 Valerio Piazza , H Chalermchai , O. Saket , Marco Vettori , A. Ali , et al.
SPIE OPTO 2018, Jan 2018, San Francisco, United States
Communication dans un congrès hal-02073074v1

Optical transitions and carrier dynamics in self-organized InAs quantum islands grown on InP(001)

 Bassem Salem , Gérard Guillot , Taha Benyattou , Catherine Bru-Chevallier , Georges Bremond , et al.
Integrated Optoelectronic Devices 2005, 2005, San Jose, United States. pp.27-30, ⟨10.1117/12.592221⟩
Communication dans un congrès hal-02353340v1
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Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer

 F. Chancerel , P. Regreny , J.L. Leclercq , S. Brottet , M. Volatier , et al.
Solar Energy Materials and Solar Cells, 2019, 195, pp.204-212. ⟨10.1016/j.solmat.2019.02.013⟩
Article dans une revue hal-02071796v1

Tunnelling current in Schottky diodes containing InAs quantum dots

 N. Hamdaoui , R. Ajjel , B. Salem , M. Gendry
Superlattices and Microstructures, 2011, 50 (2), pp.164-172. ⟨10.1016/j.spmi.2011.05.013⟩
Article dans une revue istex hal-00641294v1

Technological developments of epitaxial lift-off process over InP substrates

 F. Chancerel , P. Regreny , J.L. Leclercq , A. Jaouad , M. Darnon , et al.
Journées nationales sur les technologies émergentes en micro nanofabrication (JNTE 2017), Nov 2017, Orléans, France
Communication dans un congrès hal-02073141v1

Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing

 M. Hadj Alouane , B. Ilahi , H. Maaref , B. Salem , V. Aimez , et al.
Journal of Nanoscience and Nanotechnology, 2011, 11 (10), pp.9251-9255. ⟨10.1166/jnn.2011.4298⟩
Article dans une revue hal-02087118v1
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Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)

 J. Brault , M. Gendry , G. Grenet , G. Hollinger , Y. Desieres , et al.
Applied Physics Letters, 1998, 73 (20), pp.2932-2934. ⟨10.1063/1.122634⟩
Article dans une revue hal-02111653v1

Lateral band gap modulation by controlled elastic relaxation of strained multiquantum well structures on InP

 Jean -Louis Leclercq , Pierre Viktorovich , X. Letartre , M. Nuban , Michel Gendry , et al.
Applied Physics Letters, 1995, 67 (9), pp.1301-1303. ⟨10.1063/1.114404⟩
Article dans une revue hal-02119492v1

Size and shape effects on excitons and biexcitons in single InAs∕InP quantum dots

 Nicolas Chauvin , B. Salem , G. Bremond , G. Guillot , C. Bru-Chevallier , et al.
Journal of Applied Physics, 2006, 100 (7), ⟨10.1063/1.2353896⟩
Article dans une revue hal-01902442v1
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Surface spinodal decomposition in low temperature Al0.48In0.52As grown on InP(001) by molecular beam epitaxy

 G. Grenet , Michel Gendry , M. Oustric , Y. Robach , L. Porte , et al.
Applied Surface Science, 1998, 123, pp.324 - 328. ⟨10.1016/S0169-4332(97)00522-9⟩
Article dans une revue istex hal-02194425v1

GaAs/TiO2 core-shell nanowires for Solar Water Splitting

 X. Guan , M. Vettori , J. Becdelievre , C. Botella , G. Grenet , et al.
J2N 2017, Nov 2017, Grenoble, France
Communication dans un congrès hal-02073219v1
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