Interaction of interstitials with buried amorphous layer in silicon
E. Oliviero
,
M.-L. David
,
P. F. P. Fichtner
International Conference on Extended Defects in Semiconductors (EDS 2008) , 2008, Poitiers, France. pp.1969-1973,
⟨10.1002/pssc.200881444⟩
Communication dans un congrès
in2p3-00683325v1
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Helium implanted gallium nitride evidence of gas-filled rod-shaped cavity formation along the c-axis
J-F. Barbot
,
F. Pailloux
,
M.-L. David
,
Laurent Pizzagalli
,
E. Oliviero
,
et al.
Article dans une revue
in2p3-00828299v1
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Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope
K. Alix
,
M.-L. David
,
J. Dérès
,
C. Hébert
,
Laurent Pizzagalli
Article dans une revue
hal-02114782v1
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About the internal pressure in cavities derived from implantation-induced blistering in semi-conductors.
G. Parry
,
C. Coupeau
,
E. Dion
,
M.-L. David
,
J. Colin
,
et al.
Article dans une revue
hal-00664729v1
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Kinetic evolution of blistering in hydrogen-implanted silicon
C. Coupeau
,
G. Parry
,
J. Colin
,
M.-L. David
,
J. Labanowski
,
et al.
Article dans une revue
hal-00869260v1
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Atomistic simulations of a helium bubble in silicon carbide
Laurent Pizzagalli
,
M.-L. David
Article dans une revue
hal-02447139v1
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Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering
E. Oliviero
,
M.-L. David
,
P. F. P. Fichtner
,
M.F. Beaufort
,
J-F. Barbot
Article dans une revue
in2p3-00824985v1
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Properties of helium bubbles in covalent systems at the nanoscale: A combined numerical and experimental study
J. Dérès
,
M.-L. David
,
K. Alix
,
C. Hébert
,
D. T L Alexander
,
et al.
Article dans une revue
hal-02114780v1
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Helium implantation into 4H-SiC
J-F. Barbot
,
S. Leclerc
,
M.-L. David
,
E. Oliviero
,
R. Montsouka
,
et al.
Article dans une revue
istex
in2p3-00716700v1
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Physical properties of Co/n-Ge Schottky contacts
L Lajaunie
,
M.-L. David
,
J-F. Barbot
Article dans une revue
hal-00604885v1
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Investigation of helium interstitials aggregation in silicon: Why bubbles formation by a self-trapping mechanism does not work
Laurent Pizzagalli
,
M.-L. David
,
A. Charaf-Eddin
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2015, 352, pp.152-155.
⟨10.1016/j.nimb.2014.12.002⟩
Article dans une revue
hal-01164544v1
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Electronic Structure Sensitivity to Surface Disorder and Nanometer-Scale Impurity of 2D Titanium Carbide MXene Sheets as Revealed by Electron Energy-Loss Spectroscopy
T. Bilyk
,
M. Benchakar
,
M. Bugnet
,
L. Loupias
,
P. Chartier
,
et al.
Article dans une revue
hal-03103681v1
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