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Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

 J.C. Piñero , J. de Vecchy , D. Fernández , G. Alba , J. Widiez , et al.
Applied Surface Science, 2020, 528, pp.146998. ⟨10.1016/j.apsusc.2020.146998⟩
Article dans une revue hal-04094901v1

Comparison of diamond based non-volatile photo-switch using phosphorus and nitrogen deep donors as gate dopants

 Martin Kah , Cédric Masante , Franz Koeck , Nicolas C. Rouger , Robert Nemanich , et al.
32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal
Communication dans un congrès hal-03867185v1

Determination of Current Leakage Sites in Diamond p–n Junction

 Takuya Murooka , Hitoshi Umezawa , Toshiharu Makino , Masahiko Ogura , Hiromitsu Kato , et al.
physica status solidi (a), 2019, 216 (21), pp.1900243. ⟨10.1002/pssa.201900243⟩
Article dans une revue hal-04134622v1
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Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

 Pierre Tchoulfian , Fabrice Donatini , François Levy , Benoît Amstatt , Amélie Dussaigne , et al.
Applied Physics Letters, 2013, 103 (20), pp.202101. ⟨10.1063/1.4829857⟩
Article dans une revue hal-00905599v1

Electron mobility in phosphorous doped {111} homoepitaxial diamond

 Julien Pernot , Satoshi Koizumi
Applied Physics Letters, 2008, 93 (5), pp.052105. ⟨10.1063/1.2969066⟩
Article dans une revue hal-00853416v1

Role of deep and shallow donor levels on n-type conductivity of hydrothermal ZnO

 Stéphane Brochen , Carole Granier , Guy Feuillet , Julien Pernot
Applied Physics Letters, 2012, 100 (5), pp.052115. ⟨10.1063/1.3681168⟩
Article dans une revue hal-00740909v1

Polarity-dependent selective area growth of ZnO nanorods by chemical bath deposition

 Thomas Cossuet , E. Appert , J.-L. Thomassin , F. Donatini , A. M. Lord , et al.
Matériaux 2018, Nov 2018, Strasbourg, France
Communication dans un congrès hal-01981240v1

Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations

 Aurélien Maréchal , Nicolas Clément, Jean-Paul Rouger , Jean-Christophe Crébier , Julien Pernot , Satoshi Koizumi , et al.
Diamond and Related Materials, 2014, 43, pp.34. ⟨10.1016/j.diamond.2014.01.009⟩
Article dans une revue hal-00968208v1

Deep-depletion mode boron doped monocrystalline diamond metal oxide semiconductor field effect transistor

 Thanh-Toan Pham , Julien Pernot , Gaëtan Perez , David Eon , Etienne Gheeraert , et al.
IEEE Electron Device Letters, 2017, 38 (11), pp.1571-1574. ⟨10.1109/LED.2017.2755718⟩
Article dans une revue hal-01617256v1

Towards a 3D semantic sketcher for car aesthetic design

 Vincent Cheutet , Chiara Catalano , Bianca Falcidieno , F. Giannini , Jean-Claude Léon , et al.
First Int. Workshop on Shapes&Semantics, Jun 2006, Matsushita, Japan
Communication dans un congrès hal-00375312v1
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Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam

 Akira Uedono , Alexandra-Madalina Siladie , Julien Pernot , Bruno Daudin , Shoji Ishibashi
Journal of Applied Physics, 2019, 125 (17), pp.175705. ⟨10.1063/1.5088653⟩
Article dans une revue hal-02164173v1

Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor

 Aurélien Maréchal , Manuela Aoukar , Christophe Vallee , Chloé Rivière , David Eon , et al.
Applied Physics Letters, 2015, 107 (14), pp.141601. ⟨10.1063/1.4931123⟩
Article dans une revue hal-01364101v1

Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor

 Nicolas Clément, Jean-Paul Rouger , D. Eon , Gaëtan Perez , Pierre-Olivier Jeannin , Pierre Lefranc , et al.
2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States
Communication dans un congrès hal-01306775v1
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Carrier Mobility up to 10 6 cm 2 V − 1 s − 1 Measured in Single-Crystal Diamond by the Time-of-Flight Electron-Beam-Induced-Current Technique

 A. Portier , F. Donatini , D. Dauvergne , M.-L. Gallin-Martel , Julien Pernot
Physical Review Applied, 2023, 20 (2), pp.024037. ⟨10.1103/PhysRevApplied.20.024037⟩
Article dans une revue hal-04182164v1
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Engineering nitrogen-and hydrogen-related defects in ZnO nanowires using thermal annealing

 José Villafuerte , Odette Chaix-Pluchery , Joseph Kioseoglou , Fabrice Donatini , Eirini Sarigiannidou , et al.
Physical Review Materials, 2021, 5 (5), pp.056001. ⟨10.1103/PhysRevMaterials.5.056001⟩
Article dans une revue hal-03219883v1

Electro-thermal simulations of a diamond MOSFET

 Marine Couret , Anne Castelan , Juliette Letellier , Khaled Driche , Julien Pernot , et al.
26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium
Communication dans un congrès hal-03647967v1
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Stability of B-H and B-D complexes in diamond under electron beam excitation

 Julien Barjon , A. Mehdaoui , François Jomard , Jacques Chevallier , Christine Mer-Calfati , et al.
Applied Physics Letters, 2008, 93, pp.062108. ⟨10.1063/1.2965115⟩
Article dans une revue hal-00853438v1

Non-metal to metal transition in n-type ZnO single crystal materials

 Stéphane Brochen , Guy Feuillet , Jean-Louis Santailler , Rémy Obrecht , Matthieu Lafossas , et al.
Journal of Applied Physics, 2017, 121 (9), pp.095704. ⟨10.1063/1.4977506⟩
Article dans une revue hal-02006774v1
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Transistors Haute Tension de type MOSFET et MESFET en diamant pour l'électronique de puissance

 Cédric Masante , Khaled Driche , Thanh-Toan Pham , Hitoshi Umezawa , Gaetan Perez , et al.
Symposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès hal-02981917v1
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Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate

 Jash Mehta , Idriss Abid , Julien Bassaler , Julien Pernot , Philippe Ferrandis , et al.
Compound Semiconductor Week, CSW 2022, Jun 2022, Ann Arbor, MI, United States. 2 p
Communication dans un congrès hal-03828829v1

Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

 J.C. Pinero , D. Araujo , A. Fiori , A. Traoré , M.P. Villar , et al.
Applied Surface Science, 2017, 395, pp.200-207. ⟨10.1016/j.apsusc.2016.04.166⟩
Article dans une revue hal-02015148v1

Effects of Polarity on the Formation and Physical Properties of Selective Area Grown ZnO Nanorods

 T. Cossuet , E. Appert , J.-L. Thomassin , F. Donatini , A. M. Lord , et al.
E-MRS Fall Meeting, Sep 2018, Warsaw, Poland
Communication dans un congrès hal-01979219v1

Publisher's note : Boron-deuterium complexes in diamond: How inhomogeneity leads to incorrect carrier type identification

 Amit Kumar , Julien Pernot , Franck Omnès , Pierre Muret , Aboulaye Traoré , et al.
Journal of Applied Physics, 2011, 110 (11), pp.119905. ⟨10.1063/1.3665435⟩
Article dans une revue hal-00739482v1
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Electrically active defects in boron doped diamond homoepitaxial layers studied from deep level transient spectroscopies and other techniques

 Pierre Muret , Amit Kumar , Pierre-Nicolas Volpe , Mamadou Wade , Julien Pernot , et al.
physica status solidi (a), 2009, 206 (9), pp.2016-2021. ⟨10.1002/pssa.200982218⟩
Article dans une revue hal-00967540v1

Metal oxide semiconductor interface and transmission electron microscopy characterization

 Daniel Araujo , Julien Pernot
Satoshi Koizumi; Hitoshi Umezawa; Julien Pernot; Mariko Suzuki. Power Electronics Device Applications of Diamond Semiconductors, Woodhead Publishing, 2018
Chapitre d'ouvrage hal-02009675v1

Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC

 Antonio Ferreira da Silva , Julien Pernot , Sylvie Contreras , Bo E. Sernelius , Clas Persson , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74, pp.245201. ⟨10.1103/PhysRevB.74.245201⟩
Article dans une revue hal-00536294v1

Hole traps profile and physical properties of deep levels in various homoepitaxial diamond films studied by isothermal and deep level transient spectroscopies

 Pierre Muret , Pierre-Nicolas Volpe , Julien Pernot , Franck Omnès
Diamond and Related Materials, 2011, 20 (5-6), pp.722-725. ⟨10.1016/j.diamond.2011.03.013⟩
Article dans une revue istex hal-00739485v1
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La diode Schottky en diamant : le présent et le futur

 David Eon , Julien Pernot , Aboulaye Traoré , Nicolas Clément, Jean-Paul Rouger , Etienne Gheeraert
Symposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès hal-01361578v1

Metallic core conduction in unintentionally doped ZnO nanowire

 Andrés de Luna Bugallo , Fabrice Donatini , Corinne Sartel , Vincent Sallet , Julien Pernot
Japanese Journal of Applied Physics, part 2 : Letters, 2015, 8 (2), pp.025001. ⟨10.7567/APEX.8.025001⟩
Article dans une revue hal-01319871v1

Metal oxide semiconductor structure using oxygen-terminated diamond

 Gauthier Chicot , Aurélien Maréchal , Renaud Motte , Pierre Muret , Etienne Gheeraert , et al.
Applied Physics Letters, 2013, 102 (24), pp.242108. ⟨10.1063/1.4811668⟩
Article dans une revue hal-00854602v1
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