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	Pour les 46 documents Envoyer sur ORCID RSS ATOM Exporter BibTeX XML-TEI CSV RTF EndNote PDF HTML Export avancé	Page : Page précédente 1 2 Page suivante	triés par Pertinence Auteur A→Z Auteur Z→A Titre A→Z Titre Z→A Date de publication croissante Date de publication décroissante Date de dépôt croissante Date de dépôt décroissante

		Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD P. Chauhan , S. Hasenöhrl , E. Dobročka , M.P. Chauvat , A. Minj , et al. Journal of Applied Physics, 2019, 125 (10), pp.105304. ⟨10.1063/1.5079756⟩ Article dans une revue hal-02335264v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer Prerna Chauhan , S. Hasenöhrl , A. Minj , M.P. Chauvat , Pierre Ruterana , et al. Applied Surface Science, 2020, 502, pp.144086. ⟨10.1016/j.apsusc.2019.144086⟩ Article dans une revue hal-03050853v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence B. Damilano , Stephane Vezian , M.P. Chauvat , Pierre Ruterana , Nuño Amador-Méndez , et al. Journal of Applied Physics, 2022, 132 (3), pp.035302. ⟨10.1063/5.0089892⟩ Article dans une revue hal-03865257v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2/YSZ-based buffered silicon substrates Paolo Perna , Laurence Méchin , Marie-Pierre Chauvat , Pierre Ruterana , Ch. Simon , et al. Journal of Physics: Condensed Matter, 2009, 21, pp.306005 Article dans une revue hal-00438161v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer Ranim Mohamad , Marie Pierre Chauvat , Slawomir Kret , Piero Gamarra , Sylvain Delage , et al. Journal of Applied Physics, 2019, 125 (21), pp.215707. ⟨10.1063/1.5088109⟩ Article dans une revue hal-02335333v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate L. Desplanque , Xianglei Han , Maria Fahed , Vinay K. Chinni , David Troadec , et al. 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. paper Mo-C1-6, 2 p., ⟨10.1109/ICIPRM.2014.6880530⟩ Communication dans un congrès hal-01059835v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Implantation damage formation in a-, c- and m-plane GaN K. Lorenz , E. Wendler , A. Redondo-Cubero , N. Catarino , M.-P. Chauvat , et al. Acta Materialia, 2017, 123, pp.177-187. ⟨10.1016/j.actamat.2016.10.020⟩ Article dans une revue hal-02340881v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission Pierre Ruterana , Magali Morales , Nicolas Chery , Thi Huong Ngo , Marie-Pierre Chauvat , et al. Journal of Applied Physics, 2020, 128, pp.223102. ⟨10.1063/5.0027119⟩ Article dans une revue hal-03047502v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Atomic core structures associated to the threading dislocation with $\langle1\bar 100\rangle$ Burgers vector and [0001] line direction in GaN Antoine Béré , Pierre Ruterana , Marie-Pierre Chauvat , Jean Koulidiati Japanese Journal of Applied Physics, 2013, 52, pp.11NG06. ⟨10.7567/JJAP.52.11NG06⟩ Article dans une revue insu-03611657v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures M. Fialho , S. Magalhaes , J. Rodrigues , M.P. Chauvat , P. Ruterana , et al. Surface and Coatings Technology, 2018, 355, pp.29-39. ⟨10.1016/j.surfcoat.2018.02.008⟩ Article dans une revue hal-02340859v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer Prerna Chauhan , S. Hasenöhrl , A. Minj , M.P. Chauvat , P. Ruterana , et al. Applied Surface Science, 2020, 502, pp.144086. ⟨10.1016/j.apsusc.2019.144086⟩ Article dans une revue hal-02338791v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Interface dislocations in In x Ga 1- x N/GaN heterostructures I. Belabbas , G. Nouet , Q. Li , A. Minj , M-P Chauvat , et al. physica status solidi (a), 2017, 214 (4), pp.1600442. ⟨10.1002/pssa.201600442⟩ Article dans une revue hal-03352834v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer Ranim Mohamad , Marie Pierre Chauvat , Slawomir Kret , Piero Gamarra , Sylvain Delage , et al. Journal of Applied Physics, 2019, 125 (21), pp.215707. ⟨10.1063/1.5088109⟩ Article dans une revue hal-03047705v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Optimized ohmic contacts for InAlGaN/GaN HEMTs Pierre Ruterana , Marie Pierre Chauvat , Magali Morales , Farid Medjdoub , Piero Gamarra , et al. ASDAM 2022 - 14th International Conference on Advanced Semiconductor Devices and Microsystems, Oct 2022, Smolenice, Slovakia. pp.1-8, ⟨10.1109/ASDAM55965.2022.9966781⟩ Communication dans un congrès hal-03930667v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth Bertrand Lacroix , Marie-Pierre Chauvat , Pierre Ruterana , G. Nataf , P. de Mierry Applied Physics Letters, 2011, 98, pp.121916 Article dans une revue hal-00586001v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Transmission electron microscopy and XRD investigations of InAIN/GaN thin heterostructures for HEMT applications Arantxa Vilalta-Clemente , Magali Morales , Marie-Pierre Chauvat , Yadira Arroyo-Rojas Dasilva , Marie A. Poisson , et al. Conference 7602: Photonic West OPTO: Gallium Nitride Materials and Devices V, Jan 2010, San Francisco, United States. pp.76020K Communication dans un congrès hal-00491499v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB Bruno Guillet , Ö. Arthursson , Laurence Méchin , M.-N. Metzner , Marie-Pierre Chauvat , et al. J Low Temp Phys, 2008, 151, pp.570-574 Article dans une revue cea-00372235v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		The structure of InAlGaN layers grown by metal organic vapour phase epitaxy : effects of threading dislocations and inversion domains from the GaN template Hichem Ben Ammar , Albert Minj , Piero Gamarra , Cédric Lacam , Magali Morales , et al. Journal of Microscopy, 2017 Article dans une revue hal-03351944v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties L. Lahourcade , J. Renard , B. Gayral , E. Monroy , Marie-Pierre Chauvat , et al. Journal of Applied Physics, 2008, 103, pp.093514 Article dans une revue cea-00372565v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy L Desplanque , M Fahed , X Han , V Chinni , D Troadec , et al. Nanotechnology, 2014, 25 (46), pp.465302. ⟨10.1088/0957-4484/25/46/465302⟩ Article dans une revue hal-03779284v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Optical, structural and electrical characterization of pure ZnO films grown on p-type Si substrates by radiofrequency magnetron sputtering in different atmospheres O. Melnichuk , L. Melnichuk , Ye Venger , C. Guillaume , M-P Chauvat , et al. Semiconductor Science and Technology, 2020, 35 (9), pp.095034. ⟨10.1088/1361-6641/ab9397⟩ Article dans une revue hal-03155451v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		TEM analysis of the dislocations mechanisms in III-V heterostructures grown by molecular beam epitaxy Y. Wang , M.P. Chauvat , P. Ruterana , L. Desplanque , X. Wallart Materials Research Society Spring Meeting, MRS Spring 2011, Symposium RR : Fundamental science of defects and microstructure in advanced materials for energy, 2011, San Francisco, CA, United States Communication dans un congrès hal-00807156v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures Stanislav Hasenöhrl , Prerna Chauhan , Edmund Dobročka , Roman Stoklas , Ľubomír Vančo , et al. Applied Physics Express, 2018, 12 (1), pp.014001. ⟨10.7567/1882-0786/aaef41⟩ Article dans une revue hal-02334105v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		The high sensitivity of InN under rare earth ion implantation at medium range energy B Lacroix , M P Chauvat , P Ruterana , K Lorenz , E Alves , et al. Journal of Physics D: Applied Physics, 2011, 44 (29), pp.295402. ⟨10.1088/0022-3727/44/29/295402⟩ Article dans une revue hal-00636199v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		PAMBE growth of (112¯ 2)-oriented GaN/AlN nanostructures on m-sapphire L. Lahourcade , J. Renard , P. K. Kandaswamy , B. Gayral , Marie-Pierre Chauvat , et al. Microelectronics Journal, 2009, 40, pp.325-327 Article dans une revue hal-00438093v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Epitaxial Growth of Sputtered Ultra-thin NbN Layers and Junctions on Sapphire J.-C. Villegier , S. Bouat , P. Cavalier , R. Setzu , R. Espiau de Lamaestre , et al. IEEE Transactions on Applied Superconductivity, 2009, 19 (3), pp.3375-3378. ⟨10.1109/TASC.2009.2019243⟩ Article dans une revue hal-00974758v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Comprehensive investigation of Er2O3 thin films grown with different ALD approaches L. Khomenkova , H. Merabet , M.-P. Chauvat , C. Frilay , X. Portier , et al. Surfaces and Interfaces, 2022, 34, pp.102377. ⟨10.1016/j.surfin.2022.102377⟩ Article dans une revue hal-03790146v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Porous Nitride Light-Emitting Diodes Nuño Amador-Mendez , Tiphaine Mathieu-Pennober , Stéphane Vézian , Marie-Pierre Chauvat , Magali Morales , et al. ACS photonics, 2022, 9 (4), pp.1256-1263. ⟨10.1021/acsphotonics.1c01729⟩ Article dans une revue hal-03864353v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Investigation of InN layers grown by molecular beam epitaxy on GaN templates Arantxa Vilalta-Clemente , G. R. Mutta , Marie-Pierre Chauvat , Magali Morales , Jean-Louis Doualan , et al. physica status solidi (a), 2010, 207 (5), pp.1079-1082 Article dans une revue hal-00483614v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Strain relaxation in semiconductor heteroepitaxial layers Marie Pierre Chauvat , Magali Morales , Jun Chen , Pierre Ruterana 11th Solid state surfaces and interfaces (SSSI 2020), Comenius University Bratislava, Nov 2020, Bratislava, Slovakia. pp.14 Communication dans un congrès hal-03051501v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More

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Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2/YSZ-based buffered silicon substrates

The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer

InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

Implantation damage formation in a-, c- and m-plane GaN

Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Atomic core structures associated to the threading dislocation with $\langle1\bar 100\rangle$ Burgers vector and [0001] line direction in GaN

Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures

Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Interface dislocations in In x Ga 1- x N/GaN heterostructures

The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer

Optimized ohmic contacts for InAlGaN/GaN HEMTs

Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth

Transmission electron microscopy and XRD investigations of InAIN/GaN thin heterostructures for HEMT applications

Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy : effects of threading dislocations and inversion domains from the GaN template

Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy

Optical, structural and electrical characterization of pure ZnO films grown on p-type Si substrates by radiofrequency magnetron sputtering in different atmospheres

TEM analysis of the dislocations mechanisms in III-V heterostructures grown by molecular beam epitaxy

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

The high sensitivity of InN under rare earth ion implantation at medium range energy

PAMBE growth of (112¯ 2)-oriented GaN/AlN nanostructures on m-sapphire

Epitaxial Growth of Sputtered Ultra-thin NbN Layers and Junctions on Sapphire

Comprehensive investigation of Er2O3 thin films grown with different ALD approaches

Porous Nitride Light-Emitting Diodes

Investigation of InN layers grown by molecular beam epitaxy on GaN templates

Strain relaxation in semiconductor heteroepitaxial layers