Crystal quality of SiGe films fabricated by the condensation technique and characterized by medium energy ion scattering
Fabien Rozé
,
Francois Pierre
,
Olivier Gourhant
,
François Bertin
,
Elisabeth Blanquet
,
et al.
Article dans une revue
hal-02169850v1
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Deposition and characterization of (Ti, Al)N coatings deposited by thermal LPCVD in an industrial reactor
Florent Uny
,
Sofiane Achache
,
Salim Lamri
,
Jaafar Ghanbaja
,
Evelyne Fischer
,
et al.
Article dans une revue
hal-02119534v1
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Undoped TiO2 and nitrogen-doped TiO2 thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications
L. Tian
,
A. Soum-Glaude
,
F. Volpi
,
L. Salvo
,
G. Berthome
,
et al.
Article dans une revue
hal-01211353v1
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Tractable chemical models for CVD of silicon and carbon
E. Blanquet
,
S. Gokoglu
Article dans une revue
istex
jpa-00251362v1
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Experimental kinetic study of oxidation of uranium monocarbide powders under controlled oxygen partial pressures below 230 degrees C
C. Berthinier
,
C. Rado
,
O. Dugne
,
M. Cabie
,
C. Chatillon
,
et al.
Article dans une revue
istex
hal-00850222v1
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Atomic Layer Deposition of TiO2 ultrathin films on 3D substrates for energy applications
A. Soum-Glaude
,
L. Tian
,
E. Blanquet
,
V. Brizé
,
L. Cagnon
,
et al.
Communication dans un congrès
hal-00807357v1
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PEALD ZrO2 films deposition on Ti and Si substrates
D. Monnier
,
M. Gros-Jean
,
E. Deloffre
,
F. Volpi
,
E. Blanquet
ECS Transactions , 2009, 25 (8), pp.235-241
Article dans une revue
hal-00457447v1
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Large grain polySiC boules for wafer-bounding
G. Chichignoud
,
E. Blanquet
,
M. Anikin
,
J.M. Bluet
,
P. Chaudouët
,
et al.
Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005 , 2005, Pittsburgh, United States. pp.71-74
Communication dans un congrès
hal-00173118v1
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Numerical Simulation of SiC Growth processes: a characterization tool for the design of epitaxial structures in electronics
M. Pons
,
S. Nishizawa
,
E. Blanquet
,
R. Boichot
,
D. Chaussende
Renewable Energy 2010 , Jun 2010, Yokohama, Japan
Communication dans un congrès
hal-00502036v1
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Low-Temperature low-resistivity PEALD TiN using TDMAT under hydrogen redecing ambient
P. Caubet
,
T. Blomberg
,
R. Benaboud
,
C. Wyon
,
E. Blanquet
,
et al.
Journal of The Electrochemical Society , 2008, 155 (8), pp.625-632
Article dans une revue
hal-00374706v1
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Method for functionalizing a polymer-based substrate by chemical deposition of a thin layer
Erwan Gicquel
,
Frédéric Mercier
,
Raphaël Boichot
,
E. Blanquet
,
Evelyne Mauret
,
et al.
France, Patent n° : US20230272522A1. 2023
Brevet
hal-04402589v1
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Ti-Al-N-Based Hard Coatings: Thermodynamical Background, CVD Deposition, and Properties. A Review
Florent Uny
,
Elisabeth Blanquet
,
Frédéric Schuster
,
Frédéric Sanchette
Chapitre d'ouvrage
hal-02283304v1
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Advances in nitride film and coating growth by chemical vapor deposition
Michel Pons
,
Danying Chen
,
Manoel Jacquemin
,
Juan Su
,
Raphael Boichot
,
et al.
78th Japan Society of Applied Physics Conference , Sep 2017, Fukuoka, Japan
Communication dans un congrès
hal-01677320v1
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Chemical vapor deposition of titanium nitride thin films: kinetics and experiments
Juan Su
,
Rapahel Boichot
,
Elisabeth Blanquet
,
Frederic Mercier
,
Michel Pons
Article dans une revue
hal-02315144v1
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Chemical vapour deposition and atomic layer deposition of amorphous and nanocrystalline metallic coatings: Towards deposition of multimetallic films
E. Blanquet
,
A. Mantoux
,
M. Pons
,
C. Vahlas
Article dans une revue
hal-00531708v1
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Ti3SiC2-SiC multilayer thin films deposited by high temperature reactive chemical vapor deposition
Jorge Sanchez Espinoza
,
Fatma Trabelsi
,
Christophe Escape
,
Ludovic Charpentier
,
Marc Fivel
,
et al.
Article dans une revue
hal-03762133v1
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DNA microarrays on silicon nanostructures : Optimization of the multilayer stack for fluorescence detection
C. Oillic
,
P. Mur
,
E. Blanquet
,
P. Delapierre
,
F. Vinet
,
et al.
Biosensors & bioelectronics , 2007, 22 (9-10), pp.2086-2092
Article dans une revue
hal-00141724v1
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Atomic layer deposition of tantalum oxide thin films for their use as diffusion barriers in microelectronic devices
A. Lintanf-Salaun
,
A. Mantoux
,
E. Djurado
,
E. Blanquet
Article dans une revue
istex
hal-00528040v1
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Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process.
A. Claudel
,
E. Blanquet
,
D. Chaussende
,
R. Boichot
,
B. Doisneau
,
et al.
Article dans une revue
istex
hal-00664176v1
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Stability of High Temperature Chemical Vapor Deposited Silicon Based Structures on Metals for Solar Conversion.
I. Gelard
,
G. Chichignoud
,
E. Blanquet
,
H.N. Xuan
,
R. Cruz
,
et al.
Article dans une revue
hal-00664178v1
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Chemistry of iodine and aerosol composition in the primary circuit of a nuclear power plant
M. Gouello
,
H. Mutelle
,
F. Cousin
,
S. Sobanska
,
E. Blanquet
21st International Conference Nuclear Energy for Europe , Sep 2012, Lubiana, Slovenia
Communication dans un congrès
hal-00779422v1
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High Temperature Chemical Vapor Deposition of thick (5 to 20 mm) Aluminum nitride layers
E. Blanquet
,
A. Claudel
,
S. Lay
,
R. Boichot
,
N. Coudurier
,
et al.
International Workshop on crystal growth and characterization of advanced materials and devices. , Dec 2012, Chennai, India
Communication dans un congrès
hal-00812217v1
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CHEMICAL VAPOR DEPOSITION OF TaSi2 AND WSi2 AT ATMOSPHERIC PRESSURE FROM IN SITU PREPARED METAL CHLORIDES
E. Blanquet
,
C. Vahlas
,
C. Bernard
,
R. Madar
,
J. Palleau
,
et al.
Article dans une revue
jpa-00229597v1
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Ion beam analysis of ternary silicides me-Si-N (Me = Re Ta Ti W) thin films used as diffusion barriers in advanced metallization
R. Somatri-Bouamrane
,
N. Chevarier
,
A. Chevarier
,
A.M. Dutron
,
E. Blanquet
,
et al.
International Symposium on Chemical Vapor Deposition : CDV-XIV and EUROCVD11 , Sep 1997, Paris, France. pp.1-8
Communication dans un congrès
in2p3-00007487v1
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Influence of total pressure and precursors flow rates on the growth of aluminum nitride by high temperature chemical vapor deposition (HTCVD)
E. Blanquet
,
D. Chaussende
,
A. Claudel
,
D. Pique
,
M. Pons
physica status solidi (c) , 2009, 6, pp.S348-S351
Article dans une revue
hal-00432756v1
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Knudsen cell mass spectrometry applied to the investigation of organometallic precursors vapours
P. Violet
,
I. Nuta
,
C. Chatillon
,
E. Blanquet
EUROCVD , Sep 2007, Netherlands. pp.8813-8817
Communication dans un congrès
hal-00196653v1
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Elaboration of Ta2O5 Thin Films Using Electrostatic Spray Deposition for Microelectronic Applications
A. Lintanf
,
A. Mantoux
,
E. Blanquet
,
E. Djurado
Journal of Physical Chemistry C , 2007, 111 (15), pp.5708-5714
Article dans une revue
hal-00196396v1
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Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy
N. Coudurier
,
R. Boichot
,
V. Fellmann
,
A. Claudel
,
E. Blanquet
,
et al.
Article dans une revue
istex
hal-00911167v1
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Thermodynamic and experimental study of UC powders ignition.
F. Le Guyadec
,
C. Rado
,
S. Joffre
,
C. Chatillon
,
E. Blanquet
,
et al.
Article dans une revue
istex
hal-00434236v1
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Functionalization of Aluminium Nitride Thin Films and Coatings
M. Pons
,
R. Boichot
,
Florian Mercier
,
S. Lay
,
E. Blanquet
International Conference on Metallurgical Coatings and Thin Films (ICMCTF), " Hard Coatings and Vapor Deposition Technology" , 2015, San Diego, United States
Communication dans un congrès
hal-01138864v1
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