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98 résultats
Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential MethodIEEE Transactions on Electron Devices, 2020, 67 (11), pp.4649-4653. ⟨10.1109/TED.2020.3015466⟩
Article dans une revue
cea-02972351v1
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Superior long term stability of SiC nanowires over Si nanowires under physiological conditionsMaterials Research Express, 2019, 6 (1), pp.015013. ⟨10.1088/2053-1591/aae32a⟩
Article dans une revue
hal-02006133v1
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Electrical characterization of metal/a-SiC:H/Si MIS capacitors for DNA sensor applicationMicro & NanoEngineering (MNE) 2018, Sep 2018, Copenhague, Denmark
Communication dans un congrès
hal-02072177v1
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Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETsIEEE Transactions on Electron Devices, 2012, 59 (8), pp.2085-2092
Article dans une revue
hal-02006109v1
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Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique2015 International Conference on Microelectronic Test Structures (ICMTS), Mar 2015, Tempe, United States. pp.163-168, ⟨10.1109/ICMTS.2015.7106134⟩
Communication dans un congrès
hal-02009889v1
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Detection of DNA using Silicon carbide nanowire based Field effect transistor9èmes Journées Maghreb-Europe sur les Matériaux et leurs Applications aux Dispositifs et aux Capteurs (MADICA 2014), Nov 2014, Madhia, Morocco
Communication dans un congrès
hal-02008608v1
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Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etchingEuropean Conf. on SiC and Related Materials, ECSCRM'04, 2005, 483-485, pp.773-776
Article dans une revue
hal-00146143v1
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Caractérisation de diodes pin à base de carbure de silicium de polytype 4H par spectroscopie Raman et photoémissionColloque du Groupement Français de Spectroscopie Vibrationnelle (GFSV), thème 2005: Imagerie et Cartographie en Spectroscopie Vibrationnelle, Ecole de Physique des Houches, 2005, France. pp.XX
Communication dans un congrès
hal-00148225v1
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Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etchingPhysica Status Solidi, 2005, a, pp.1-5
Article dans une revue
hal-00145183v1
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Carburization of Si Microwires by Chemical Vapour DepositionJournal of Nanoscience and Nanotechnology, 2011, 11 (9), pp.8412-8415. ⟨10.1166/jnn.2011.5094⟩
Article dans une revue
hal-00629247v1
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SiC-based nanowires and nanotubes for harsh and biological environmentsInternational Conference on One-dimensional Nanomaterials, Sep 2013, Annecy, France
Communication dans un congrès
hal-00950044v1
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SiC Nanowire-Based Transistors for Electrical DNA DetectionEd. by S. E. Saddow. Silicon Carbide Biotechnology (Second Edition): A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications, Elsevier, pp.1-25, 2016, 978-0-12-802993-0
Chapitre d'ouvrage
hal-02006095v1
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Elaboration of core Si/shell SiC nanowiresMaterials Science Forum, 2013, 740-742, pp.306-310. ⟨10.4028/www.scientific.net/MSF.740-742.306⟩
Article dans une revue
hal-00850239v1
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Comparative study on dry ICP etching of α- and β-SiC nano-pillarsMaterials Science Forum, 2013, 740-742, pp.817-820
Article dans une revue
hal-00944252v1
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Sheet resistance measurement on AlGaN/GaN wafers and dispersion studyINFOS 2013, Jun 2013, Cracow, Poland. pp.P.14
Communication dans un congrès
hal-01074271v1
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Conversion of Si nanowires into SiC nanotubesInternational Conference on Silicon Carbide and Related Materials, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00650067v1
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Electrical transport properties of catalyst-free grown 3C-SiC nanowiresInternational workshop on 3C-SiC hetero-epitaxy (Hetero-SiC '09), May 2009, Catania, Italy
Communication dans un congrès
hal-00603791v1
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Top-down 3C-SiC NWFETs40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE-EXMATEC 2016), Jun 2016, Aveiro, Portugal
Communication dans un congrès
hal-01698956v1
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Detection of DNA using Silicon carbide nanowire based Field effect transistor8th NAMIS International Autumn School 2014, International Research Network on Nano and Micro Systems (NAMIS), Sep 2014, Hsinchu, Taiwan
Communication dans un congrès
hal-02009804v1
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Si nanowire p-FET with asymmetric source-drain I-V characteristicsSolid State Communications, 2009, 24 (12), pp.461-463
Article dans une revue
hal-00596152v1
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Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and PhotoemissionMaterials Science Forum, 2005, 483?485, pp. 437-440. ⟨10.4028/0-87849-963-6.437⟩
Article dans une revue
hal-00334315v1
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Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimesNanotechnology, 2007, 18, pp.475715-475720. ⟨10.1088/0957-4484/18/47/475715⟩
Article dans une revue
istex
hal-00353870v1
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Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodesApplied Physics Letters, 2012, 101 (22), 222111, 4 p. ⟨10.1063/1.4768440⟩
Article dans une revue
hal-00769905v1
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A Self-Powered and Battery-Free Vibrational Energy to Time Converter for Wireless Vibration MonitoringSensors, 2021, pp.7503
Article dans une revue
hal-03439657v1
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4H-SiC Nanowire arrays formation by nanoimprint lithography, plasma etching and sacrificial oxidationWocSdice 2019, Jun 2019, Cabourg, France
Communication dans un congrès
hal-02344210v1
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Bio-Functionalization of Silicon Carbide Nanostructures for SiC Nanowire-Based Sensors RealizationJournal of Nanoscience and Nanotechnology, 2014, 14 (5), pp.3391 - 3397. ⟨10.1166/jnn.2014.8223⟩
Article dans une revue
hal-01869731v1
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Y-Function Based Methodology for Accurate Statistical Extraction of HEMT Device Parameters for GaN Technology2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Sep 2020, Caen, France. pp.1-4, ⟨10.1109/EUROSOI-ULIS49407.2020.9365637⟩
Communication dans un congrès
cea-03167130v1
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First Experimental Functionalization Results of SiC Nanopillars for Biosensing ApplicationsMaterials Science Forum, 2013, 740-742, pp.821-824
Article dans une revue
hal-02006461v1
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Semiconductive nanostructures for electrical DNA detection8th Franco-Spanish Workshop IBERNAM-CMC2, Oct 2016, Toulouse, France
Communication dans un congrès
hal-02016949v1
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Investigating the long-term stability of Si and SiC nanowires under physiological conditionsJournées Nationales des Nanofils Semiconducteurs, J2N, Nov 2017, Grenoble, France
Communication dans un congrès
hal-02049744v1
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