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102 résultats
Graphene growth by molecular beam epitaxy (on SiC)Annual Meeting of GDR-I Graphene and Nanotubes : Science and Applications, GNT 2013, 2013, Guidel-Plages, France
Communication dans un congrès
hal-00878506v1
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Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping densityApplied Physics Letters, 2002, 80, pp.4151-4153
Article dans une revue
hal-00148648v1
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Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density19th International Conference on Indium Phosphide and Related Materials, IPRM'07, 2007, Japan. pp.586-587, ⟨10.1109/ICIPRM.2007.381257⟩
Communication dans un congrès
hal-00284099v1
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Conduction band offset in the AlxGayIn1–x–yP/Ga0.52In0.48P system as studied by luminescence spectroscopyJournal of Applied Physics, 2003, 93 (1), pp.384. ⟨10.1063/1.1528309⟩
Article dans une revue
hal-00018496v1
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Graphene nanoribbon field effect transistor for high frequency applications41st European Microwave Conference, EuMC 2011, 2011, Manchester, United Kingdom. pp.1138-1141
Communication dans un congrès
hal-00799695v1
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Fabrication and characterization of CVD grown graphene based field-effect transistor44th European Microwave Conference and 9th European Microwave Integrated Circuits Conference, EuMC/EuMIC 2014, Oct 2014, Rome, Italy. pp.367-370, ⟨10.1109/EuMC.2014.6986446⟩
Communication dans un congrès
hal-03335830v1
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Status report on theGALLEX experimentIl Nuovo Cimento C, 1992, 15 (6), pp.917-929. ⟨10.1007/BF02506685⟩
Article dans une revue
istex
hal-03094738v1
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Alternative strategy to grow large surface hBN on Ge films by molecular beam epitaxyGraphene2022, Jul 2022, Aachen, Germany
Communication dans un congrès
hal-03737768v1
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A 60GHz current gain cut off frequency graphene nano ribbon FET2nd International Symposium on the Science and Technology of Epitaxial Graphene, STEG2, 2010, Amelia Island, FL, United States
Communication dans un congrès
hal-00573562v1
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Non-linearity of RF switch based on 2D materialsGraphene2021, Oct 2021, Grenoble, France
Communication dans un congrès
hal-03584529v1
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Terahertz near-field imaging using batch-fabricated cantilevers with 70 μm long tips2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-2, ⟨10.1109/IRMMW-THz.2019.8874242⟩
Communication dans un congrès
hal-02398422v1
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Low frequency transconductance and output resistance dispersion of epitaxial graphene nanoribbon-based field effect transistors69th Device Research Conference, DRC 2011, 2011, Santa Barbara, CA, United States. pp.149-150, ⟨10.1109/DRC.2011.5994461⟩
Communication dans un congrès
hal-00799968v1
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Graphene growth and synthesisEuropean Microwave Week, EuMC/EuMIC, Workshop W16 : Graphene RF Nanoelectronics, 2012, Amsterdam, Netherlands
Communication dans un congrès
hal-00797341v1
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Two-photon absorption in InP substrates in the 1.55 µm rangeApplied Physics Letters, 2004, 85, pp.239
Article dans une revue
hal-00018568v1
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[Invited] Carbon materials : new trends for future electronic ?5ème Colloque du GDR SOC-SIP, 2011, Lyon, France
Communication dans un congrès
hal-00807124v1
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[Invited] Graphene growth by molecular beam epitaxy (on SiC)PDI Topical Workshop on MBE-Grown Graphene, 2013, Berlin, Germany
Communication dans un congrès
hal-00878497v1
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Electronic properties of the high electron mobility Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructureJournal of Applied Physics, 2010, 108, pp.043704. ⟨10.1063/1.3475709⟩
Article dans une revue
hal-00709521v1
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Devices and circuits for HF applications based on 2D materials2023 38th Conference on Design of Circuits and Integrated Systems (DCIS), Nov 2023, Málaga, Spain. pp.1-5, ⟨10.1109/DCIS58620.2023.10335977⟩
Communication dans un congrès
hal-04396932v1
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Fabrication and characterization of an epitaxial graphene nanoribbon-based field-effect transistorIEEE Transactions on Electron Devices, 2011, 58, pp.1594-1596. ⟨10.1109/TED.2011.2119486⟩
Article dans une revue
hal-00603002v1
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Growth kinetic studies of graphene on Cu foilsIEEE Topical Symposium on RF Nanotechnology, Asia-Pacific EMC Week, APEMC 2012, 2012, Sentosa Island, Singapore
Communication dans un congrès
hal-00815030v1
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Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling TransferNanomaterials, 2021, 11 (10), pp.2528. ⟨10.3390/nano11102528⟩
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hal-03545150v1
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Towards high quality CVD graphene growth and transferCarbon, 2015, 89, pp.82-92. ⟨10.1016/j.carbon.2015.03.017⟩
Article dans une revue
hal-02950347v1
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First attempts of WSe2 growth on GaP(111)B substrates by MBEInternational Conference on Molecular Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom. 2 p
Communication dans un congrès
hal-04172997v1
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Advances on hBN growth on Ni substrate by Plasma Assisted Molecular Beam EpitaxyGraphene2021, Oct 2021, Grenoble, France
Communication dans un congrès
hal-03683202v1
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CVD graphene growth on Ni films and transfer4th Graphene Conference, Graphene 2014, 2014, Toulouse, France
Communication dans un congrès
hal-01005676v1
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Electronic properties of the Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Kagawa, Japan
Communication dans un congrès
hal-00573576v1
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Low-frequency noise parameter extraction method for single-layer graphene FETsIEEE Transactions on Electron Devices, 2020, 67 (5), pp.2093-2099. ⟨10.1109/TED.2020.2978215⟩
Article dans une revue
hal-03142225v1
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Transistors à effet de champ à base du graphène sur SiC avec grille en T : homogénéité et performances17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p
Communication dans un congrès
hal-01018370v1
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Investigation of indium nitride for micro-nanotechnologyInternational Journal of Nanotechnology, 2012, 9, pp.900-906. ⟨10.1504/IJNT.2012.049454⟩
Article dans une revue
hal-00787438v1
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Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as DielectricsIEEE Transactions on Electron Devices, 2015, 62 (9), pp.2769-2773. ⟨10.1109/TED.2015.2459657⟩
Article dans une revue
hal-02304371v1
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