- 83
- 46
- 8
- 5
- 4
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
benoit jouault
Benoit JOUAULT
155
Documents
Identifiants chercheurs
benoitjouault-
0000-0002-2993-6916
- IdRef : 166218154
Présentation
**Position**
Directeur de Recherche CNRS (Senior CNRS researcher) at Laboratoire Charles Coulomb, Montpellier, France, in the team:
Electronic transport and teraHartz spectroscopy.
Research topics: Transport phenomena in semiconductors, nanostructures, topological insulators, graphene and graphene-like materials.
**Education and qualification**
- 2006-09-01: Université of Montpellier, habilitation
- 1995-09-01 to 1998-10-05 | Ph. D Thesis (Ecole Polytechnique: Palaiseau, FR)
Publications
- 8
- 7
- 5
- 4
- 4
- 4
- 4
- 4
- 4
- 4
- 3
- 3
- 3
- 3
- 3
- 3
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 86
- 62
- 3
- 3
- 2
- 1
- 1
- 1
- 18
- 16
- 4
- 3
- 3
- 3
- 3
- 3
- 2
- 2
- 2
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 14
- 6
- 4
- 4
- 4
- 4
- 3
- 2
- 2
- 2
- 1
- 1
- 1
- 10
- 2
- 1
- 1
- 1
Landau emission from 2D Dirac fermions in HgTe QWsGerman-French-Korean workshop on Nanophotonics, Oct 2023, Würzburg, Germany
Communication dans un congrès
hal-04305959v1
|
|
|
|
Tunable Terahertz Cyclotron Emission from Two-Dimensional Dirac Fermions48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2023), Sep 2023, Montreal, Canada. pp.1-2, ⟨10.1109/irmmw-thz57677.2023.10298862⟩
Communication dans un congrès
hal-04304349v1
|
Properties of the spin-polarized 2DEG at the LAO/ETO/STO interfaceUnconventional transport in superconducting & magnetic systems with spin-orbit coupling, Nov 2022, Vietri sul Mare, Italy
Communication dans un congrès
hal-04304476v1
|
|
Sublimation de carbure de silicium : de la couche tampon à la monocouche de graphèneCongrès annuel SFEC, Apr 2020, Samatan, France
Communication dans un congrès
hal-03040832v1
|
|
Epitaxial graphene growth and characterisation of buffer layer on SiC(0001)2D materials on substrates: growth & properties, Jan 2020, Villard de Lans, France
Communication dans un congrès
hal-03040807v1
|
|
Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia
Communication dans un congrès
hal-02466887v1
|
|
Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States
Communication dans un congrès
hal-02466858v1
|
|
Epitaxial graphene growth at low argon pressure and characterization of buffer layer on SiC(0001)GDR-I Graphene and co Annual meeting 2018, Oct 2018, Sète, France
Communication dans un congrès
hal-01923963v1
|
|
Electronic properties of epitaxial graphene close to the charge neutrality pointAnnual meeting of the GDRi Graphene & Co, Oct 2018, Sète, France
Communication dans un congrès
hal-01966485v1
|
|
Spectroscopy of temperature-driven single valley Dirac fermions in HgTe/CdHgTe quantum wells2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), Sep 2018, 345 E 47TH ST, NEW YORK, NY 10017 USA, Unknown Region. ⟨10.1109/IRMMW-THz.2018.8510039⟩
Communication dans un congrès
hal-03037689v1
|
|
Indirect Excitons in Group III-Nitride-Based Quantum Wells.CIMTEC 2018 - 14th Intl Conference on Modern Materials and Technologies - 8th Forum on New Materials, Shuji NAKAMURA; University of California; USA (Honorary Chair) Michele MUCCINI; CNR-ISMN; Italy (C, Jun 2018, Pérouse, Italy
Communication dans un congrès
hal-01908795v1
|
|
Quantum Hall resistance standard in graphene grown by CVD on SiC: state-of-the-art of the experimental mastery2018 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2018), 2018, 345 E 47TH ST, NEW YORK, NY 10017 USA, Unknown Region
Communication dans un congrès
hal-03037687v1
|
|
Robustness of the quantum Hall effect of graphene on Silicon Carbide3rd International Conference on Physics of 2D Crystals (ICP2C3), May 2018, La Valletta, Malta
Communication dans un congrès
hal-01966664v1
|
|
Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France
Communication dans un congrès
hal-01907806v1
|
|
Indirect excitons in polar GaN/(AlGa)N quantum wellsInternational school/colloquium in honor of E. Gross, Oct 2017, St-Petersbourg, Russia
Communication dans un congrès
hal-01932812v1
|
|
Epitaxial growth of low doped monolayer graphene on 4H-SIC (0001) at low argon pressureGDR-I Graphene and co Annual meeting 2017, Oct 2017, Aussois, France
Communication dans un congrès
hal-01924058v1
|
|
On the nature of light emission in polar GaN/(AlGa)N quantum wellsInternational Conference on Hybrid Photonics and Materials, Sep 2017, Miconos, Greece
Communication dans un congrès
hal-01932705v1
|
|
Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells.International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18., Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany
Communication dans un congrès
hal-01908565v1
|
|
Indirect excitons in AlGaN/GaN polar quantum wells.17th International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN17., Yasuhiko Arakawa, Mar 2016, Nara, Japan
Communication dans un congrès
hal-01388908v1
|
|
Transport of indirect excitons in GaN quantum wells.International Workshop on Nitride Semiconductors (IWN 2016), Alan Doolittle, Tomás Palacios, Stacia Keller, Siddharth Rajan, Oct 2016, Orlando, United States
Communication dans un congrès
hal-01388983v1
|
|
Convenient graphene-based quantum Hall resistance standardsCPEM 2016, Jul 2016, Ottawa, Canada. pp.117-120, ⟨10.1109/CPEM.2016.7540650⟩
Communication dans un congrès
hal-01617109v1
|
|
Indirect excitons in polar group III nitride quantum wells.8th International Conference on Materials Science and Condensed Matter Physics, Leonid Kulyuk, Sep 2016, Chisinau, Moldova
Communication dans un congrès
hal-01388929v1
|
|
Convenient Graphene-Based Quantum Hall Resistance Standards2016 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2016), 2016, 345 E 47TH ST, NEW YORK, NY 10017 USA, Unknown Region
Communication dans un congrès
hal-03037516v1
|
|
High field magneto-transport in Graphene Grown by Chemical Vapor Deposition on SiCAnnual meeting of the GDRi Graphene and Nanotubes, Nov 2015, Aussois, France
Communication dans un congrès
hal-01966744v1
|
|
Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Well Structures Grown on Sapphire and GaN Substrates.Collective Electronic Excitations in 2D (CEE 2D 2015) - INDEX Conference, François Dubin, ICFO (ES); Vittorio Pellegrini, Scuola Normale Superiore & IIT (IT); Aron Pinczuk, Columbia University (USA); David Ritchie, University of Cambridge (UK); Massimo Rontani, Cnr Nano (IT); Thomas Satzoukidis, Scuola Normale Superiore (IT); Masha Vladimirova, CNRS (FR), Sep 2015, Pise, Italy
Communication dans un congrès
hal-01305122v1
|
|
Indirect excitons in wide band gap semiconductors.International School on Nanophotonics and Photovoltaics. INSP 2015., MISP : Mediterranean Institute of Fundamental Physics, Sep 2015, Cefalu, Italy
Communication dans un congrès
hal-01389731v1
|
|
Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.15th conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN15), Bernard Gil, Jun 2014, Montpellier, France
Communication dans un congrès
hal-01305383v1
|
|
|
|
Exciton Spin Currents: TheoryOptics of Excitons in Confined Systems, Sep 2013, Rome, Italy
Communication dans un congrès
hal-00911657v1
|
Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.625+, ⟨10.4028/www.scientific.net/MSF.717-720.625⟩
Communication dans un congrès
hal-03037521v1
|
|
Weak localization and universal conductance fluctuations on epitaxial graphene grown on the C-face of 8 degrees off-axis 4H-SiC substratesADVANCES IN INNOVATIVE MATERIALS AND APPLICATIONS, 2011, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.269+, ⟨10.4028/www.scientific.net/AMR.324.269⟩
Communication dans un congrès
hal-03037526v1
|
|
Almost free standing Graphene on SiC(000-1) and SiC(11-20)HETEROSIC & WASMPE 2011, 2011, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.235+, ⟨10.4028/www.scientific.net/MSF.711.235⟩
Communication dans un congrès
hal-03037523v1
|
|
Raman spectroscopy of long isolated graphene ribbons grown on the C face of 6H-SiCNanospain Conf 2010, Mar 2010, Malaga, Spain
Communication dans un congrès
hal-00803583v1
|
|
Transport Properties of Disordered Graphene Layers4th Workshop on Quantum Chaos and Localisation Phenomena, May 2009, Warsaw (POLAND), France. pp.838-840
Communication dans un congrès
hal-00543287v1
|
|
Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), France. pp.203-206
Communication dans un congrès
hal-00543294v1
|
|
Growth of Few Graphene Layers on 6H, 4H and 3C-SiC SubstratesSILICON CARBIDE AND RELATED MATERIALS 2008, 2008, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, Switzerland. pp.203-206, ⟨10.4028/www.scientific.net/MSF.615-617.203⟩
Communication dans un congrès
hal-03037530v1
|
|
Pressure characterization of AlGaN/GaN Hall sensors13th International Conference on High Pressure Semiconductor Physics, Jul 2008, Fortaleza,, Brazil
Communication dans un congrès
hal-00401344v1
|
|
Zero-thermal drift quantum Well Hall SensorProceeding Eurosensors XXII, Sep 2008, Dresden, Germany
Communication dans un congrès
hal-00394192v1
|
|
High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies, Jun 2008, Lodz (POLAND), France. pp.1-4
Communication dans un congrès
hal-00536293v1
|
|
Top injection and side injection to a buried 2DEG : beyond the Murrmann-Berger modelProceeding of 16th European workshop on Heterostructure Technology, Sep 2007, Frejus, France
Communication dans un congrès
hal-00394194v1
|
|
Evaluation of magnetic sensors based on AlGaN/GaN heterostructures: temperature dependenceProceeding of 16th European workshop on Heterostructure Technology, Sep 2007, Frejus, France
Communication dans un congrès
hal-00394196v1
|
|
Tunneling and Coulomb Blockade in narrow GaAs/InGaAs/AlGaAs Hall bars in the quantum hall regimePHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA, Unknown Region. pp.663+
Communication dans un congrès
hal-03037691v1
|
|
|
|
Coherent quasiparticle transport in grain boundary junctions employing high-Tc superconductorsENS 2006, Dec 2006, Paris, France. pp.140-144
Communication dans un congrès
hal-00166779v1
|
Spectroscopy of a single Si donor by the resonant tunnelling experiment35th International School on the Physics of Semiconducting Compounds, Jun 2006, Jaszowiec (POLAND), France. pp.157-162
Communication dans un congrès
hal-00541617v1
|
|
Tunneling and Coulomb Blockade in narrow GaAs/InGaAs/AlGaAs Hall bars in the quantum hall regime28th International Conference on the Physics of Semiconductors (ICPS-28), Jul 2006, Vienna (AUSTRIA), France. pp.663-664
Communication dans un congrès
hal-00541616v1
|
|
Coherent quasiparticle transport in grain boundary junctions employing high-T-c superconductorsConference on European Nano Systems (ENS 2006), Dec 2006, Paris (FRANCE), France. pp.1066-1069
Communication dans un congrès
hal-00544478v1
|
|
Crossover of a quantum dot with spin-orbit interaction in a high magnetic field to a quantum Hall ferromagnetCorrelated Electrons at High Magnetic Fields, Dec 2004, Ein-Gedi, Israel. pp.601
Communication dans un congrès
hal-00544560v1
|
|
Edge states interferometer: an electronic Fabry-Perot7th International Symposium on Research in High Magnetic Fields, Jul 2003, Toulouse (FRANCE), France. pp.488-492
Communication dans un congrès
hal-00544449v1
|
|
Effect of disorder on the density of states of a two-dimensional electron gas under magnetic field7th International Symposium on Research in High Magnetic Fields, Jul 2003, Toulouse (FRANCE), France. pp.455-459
Communication dans un congrès
hal-00544448v1
|
|
2DEG spectroscopy with resonant tunneling through single impurity stateInternational Journal of Nanoscience, Vol 2, No 6, Jul 2003, PO BOX 128 FARRER RD, SINGAPORE 9128, Singapore. pp.585-592
Communication dans un congrès
hal-03037692v1
|
|
Are aharonov-bohm effect and quantized hall regime compatible?11th International Symposium on Nanostructures - Physics and Technology, Jun 2003, St Petersburg (RUSSIA), France. pp.535-541
Communication dans un congrès
hal-00544479v1
|
|
Heating process in the pre-breakdown regime of the quantum Hall effect: a size-dependent effect7th International Symposium on Research in High Magnetic Fields, Jul 2003, Toulouse (FRANCE), France. pp.446-450
Communication dans un congrès
hal-00544447v1
|
|
2DEG spectroscopy with resonant tunneling through single impurity state11th International Symposium on Nanostructures - Physics and Technology, Jun 2003, St Petersburg (RUSSIA), France. pp.585-592
Communication dans un congrès
hal-00545080v1
|
|
High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), Aug 2002, GUILDFORD (ENGLAND), France. pp.232-237
Communication dans un congrès
hal-00544457v1
|
|
Resonant tunnelling through single donor states in GaAs/AlAs/GaAs devicesInternational Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), Jul 2002, TOULOUSE (FRANCE), France. pp.303-304
Communication dans un congrès
hal-00544455v1
|
|
Compensation of the spin of a quantum dot at Coulomb blockadeMacroscopic coherence and Quantum Computing, Jun 2000, Naples, Italy. pp.325
Communication dans un congrès
hal-00544546v1
|
|
A novel selectively delta-doped AlGaAs/(In,Ga,As)/GaAs pseudomorphic heterostructureSpring Conference of the E-MRS/IUMRS/ICEM, May 2000, Strasbourg, France. pp.299-303, ⟨10.1016/S0925-3467(01)00095-7⟩
Communication dans un congrès
hal-00544461v1
|
|
Theoretical and experimental studies of magneto-tunnelling in quantum dotsInternational Conference on Electron Transport in Mesoscopic Systems (ETSM '99), Aug 1999, GOTHENBURG (SWEDEN), France. pp.427-436
Communication dans un congrès
hal-00544486v1
|
|
Resonant tunnelling spectroscopy of the local density of states in a disordered conductor8th International Conference on Hopping and Related Phenomena (HRP8), Sep 1999, MURCIA (SPAIN), France. pp.309-318
Communication dans un congrès
hal-00544483v1
|
|
Flow inversion in heavy-ion collisions below 100 MeV/n2nd International Workshop on Multiparticle Correlations and Nuclear Reactions Corinne II, Sep 1994, Nantes, France. pp.182-188
Communication dans un congrès
in2p3-00001707v1
|
|
|
Contactless Resistivity Measurement for Quantum Phenomenon StudiesEuropean Magnetic Sensors and Actuators Conference (EMSA 2022), Jul 2022, Madrid, Spain
Poster de conférence
hal-03722158v1
|
Growth of epitaxial graphene on SiC (0001) at low argon pressure and its characterizationICPS, Jul 2018, Montpellier, France
Poster de conférence
hal-01924077v1
|
|
On the nature of light emission in polar GaN/(AlGa)N quantum wells.Poster de conférence hal-01907860v1 |
|
Growth of p-type monolayer graphene on SiC (0001) via sublimation at low argon pressureGDR, Oct 2016, Oleron, France
Poster de conférence
hal-01455032v1
|
|
Studying the number of graphene layers on copper substrateGDR-GNT, Nov 2015, Aussois, France
Poster de conférence
hal-01340108v1
|
Beauty of quantum transport in GrapheneEmma Rius; Philippe Godignon. epitaxial graphene on silicon carbide modeling characterization and applications, Pan Stanford Publishing, pp.193, 2018, 978-981-4774-20-8
Chapitre d'ouvrage
hal-02048370v1
|
|
|
Disorder-induced phase transitions in double HgTe quantum wells2023
Pré-publication, Document de travail
hal-04304435v1
|
|
|
HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures2021
Pré-publication, Document de travail
hal-03442316v1
|