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Size and shape effects on excitons and biexcitons in single InAs∕InP quantum dots

Nicolas Chauvin , B. Salem , G. Bremond , G. Guillot , C. Bru-Chevallier , et al.
Journal of Applied Physics, 2006, 100 (7), ⟨10.1063/1.2353896⟩
Article dans une revue hal-01902442v1

Micro-photoluminescence study of single self-organized InAs/InP quantum sticks

Nicolas Chauvin , Bassem Salem , C. Bru-Chevallier , T. Benyatou , Gérard Guillot , et al.
Materials Science and Engineering: C, 2005, 25, pp.650-653. ⟨10.1016/j.msec.2005.06.023⟩
Article dans une revue istex hal-01975987v1

Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(0 0 1)

R. Ajjel , M. Baira , M. Gassoumi , M Maaref , B. Salem , et al.
Semiconductor Science and Technology, 2006, 21 (3), pp.311-315. ⟨10.1088/0268-1242/21/3/019⟩
Article dans une revue istex hal-02088437v1

Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitors

Maxime Legallais , Gauthier Lefevre , Simon Martin , Sébastien Labau , Franck Bassani , et al.
Advanced Materials Interfaces, 2022, 9 (5), ⟨10.1002/admi.202101731⟩
Article dans une revue hal-04222343v1

Synthesis of AlOxNy thin films using a two-step PE-ALD process

Mohammed Zeghouane , Pedro Fernandes Paes Pinto Rocha , Sarah Boubenia , Franck Bassani , Gauthier Lefevre , et al.
AIP Advances, 2023, 13 (8), ⟨10.1063/5.0154468⟩
Article dans une revue hal-04216905v1
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An improved AFM cross-sectional method for piezoelectric nanostructures properties investigation: application to GaN nanowires

Xin Xu , Alexis Potié , Rudeesun Songmuang , Jae Woo Lee , Bogdan Bercu , et al.
Nanotechnology, 2011, 22 (10), pp.105704. ⟨10.1088/0957-4484/22/10/105704⟩
Article dans une revue istex hal-00641307v1

Influence of substrate biasing on structural, chemical and electrical properties of Al 2 O 3 thin films deposited by PEALD

S Boubenia , G Lefevre , M Legallais , S Labau , F Bassani , et al.
Semiconductor Science and Technology, 2022, 37 (6), pp.065001. ⟨10.1088/1361-6641/ac6287⟩
Article dans une revue hal-03867566v1

O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

Oumaima Abouzaid , Hussein Mehdi , Mickael Martin , Jérémy Moeyaert , Bassem Salem , et al.
Nanomaterials, 2020, 10 (12), pp.2450. ⟨10.3390/nano10122450⟩
Article dans une revue hal-03185296v1

InGaAs Quantum Dots Grown by Molecular Beam Epitaxy for Light Emission on Si Substrates

C. Bru-Chevallier , A. El Akra , David Pelloux-Gervais , H. Dumont , B. Canut , et al.
Journal of Nanoscience and Nanotechnology, 2011, 11 (10), pp.9153-9159. ⟨10.1166/jnn.2011.4282⟩
Article dans une revue hal-01735321v1
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Improvement of the electrical performance of Au/Ti/HfO 2 /Ge 0.9 Sn 0.1 p-MOS capacitors by using interfacial layers

T. Haffner, , M.A. Mahjoub, , S. Labau, , J. Aubin, , J.M. Hartmann, , et al.
Applied Physics Letters, 2019, 115 (17), pp.171601. ⟨10.1063/1.5121474⟩
Article dans une revue hal-03027755v1

Formation Mechanisms of ZnO Nanowires on Polycrystalline Au Seed Layers for Piezoelectric Devices

C. Lausecker, , B. Salem , X. Baillin, , H. Roussel, , E. Sarigiannidou, , et al.
J2N, Nov 2019, Ecully, France
Communication dans un congrès hal-02624011v1

Nanonets semiconducteurs: de la conception à l'intégration en dispositifs électroniques pour la détection de biomolécules

Tuy Nguyen , Maxime Legallais , Fany Morisot , Mireille Mouis , Bassem Salem , et al.
Journées Nationales des Nanofils Semiconducteurs (J2N 2017), Nov 2017, Grenoble, France
Communication dans un congrès hal-02016901v1

Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

T. Cazimajou , M. Legallais , M. Mouis , C. Ternon , B. Salem , et al.
Solid-State Electronics, 2018, 143, pp.83-89. ⟨10.1016/j.sse.2017.11.013⟩
Article dans une revue hal-01948032v1

Functionalized silicon nanowires/conjugated polymer hybrid solar cells: Optical, electrical and morphological characterizations

N. Chehata , A. Ltaief , Emmanuel Beyou , B. Ilahi , B. Salem , et al.
Journal of Luminescence, 2015, 168, pp.315-324. ⟨10.1016/j.jlumin.2015.08.020⟩
Article dans une revue hal-01265838v1
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Effects of zinc nitrate and HMTA on the formation mechanisms of ZnO nanowires on Au seed layers

Clément Lausecker , Bassem Salem , Xavier Baillin , Vincent Consonni
Crystal Growth & Design, 2023, 23 (4), pp.2941-2950. ⟨10.1021/acs.cgd.3c00068⟩
Article dans une revue hal-04060117v1

Semiconducting nanonets: Design and integration into functional devices for multiple sensing applications

Thuy Nguyen , Fanny Morisot , Maxime Legallais , Mireille Mouis , Valérie Stambouli , et al.
Journées de la Matière Condensée (JMC 2018), SFP, Aug 2018, Grenoble, France
Communication dans un congrès hal-01981218v1

Hybrid nanocomposites based on conducting polymer and silicon nanowires for photovoltaic application

Nadia Chehata , Adnen Ltaief , Bouraoui Ilahi , Bassem Salem , Abdelaziz Bouazizi , et al.
Journal of Luminescence, 2014, 156, pp.30-35. ⟨10.1016/j.jlumin.2014.06.048⟩
Article dans une revue hal-01869153v1

Growth of Ge 1− x Sn x Nanowires by Chemical Vapor Deposition via Vapor-Liquid-Solid Mechanism Using GeH 4 and SnCl 4

Thibault Haffner , Mohammed Zeghouane , Franck Bassani , Pascal Gentile , Alban Gassenq , et al.
physica status solidi (a), 2018, 215 (1), pp.1700743. ⟨10.1002/pssa.201700743⟩
Article dans une revue hal-01948093v1

Growth strategies to control tapering in Ge nanowires

P. Periwal , T. Baron , P. Gentile , B. Salem , F. Bassani
APL Materials, 2014, 2 (4), pp.046105. ⟨10.1063/1.4870875⟩
Article dans une revue hal-01848738v1

Effect of the Er-Si interatomic distance on the Er3+ luminescence in silicon-rich silicon oxide thin films

P. Noe , B. Salem , E. Delamadeleine , D. Jalabert , V. Calvo , et al.
Journal of Applied Physics, 2007, 102 (10), pp.103516. ⟨10.1063/1.2817512⟩
Article dans une revue hal-02352877v1
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Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001)

Christelle Monat , Michel Gendry , Julien Brault , M.P. Besland , Philippe Regreny , et al.
Conference Proceedings, 2002, Paris, France. pp.565-568, ⟨10.1109/ICIPRM.2002.1014491⟩
Communication dans un congrès hal-02353255v1

Growth of SiGe NW Using Gold and Alternative Metal Catalysts

A. Potie , T. Baron , G. Rosaz , B. Salem , L. Latu-Romain , et al.
MRS Spring meeting, Apr 2011, San Francisco, United States
Communication dans un congrès hal-00650029v1

Développement de capteurs environnementaux ultra-basse consommation à base de SnO2

Antonio Assaf , Bernard Pelissier , Theo Levert , Ingrid Cañero Infante , Bassem Salem , et al.
4th international workshop of IEEE Sensors, Nov 2021, Marseille, France
Communication dans un congrès hal-03503960v1

4-exo-dig and 5-exo-dig Cyclocarbopalladation: an Expeditious Solution toward Molecular Complexity?

C. Bour , G. Blond , B. Salem , J. Suffert
Tetrahedron, 2006, 62, pp.10567-10581
Article dans une revue hal-00142922v1

Study and Comparison of Guided Silicon Nanostructures for MOS Devices: CVD versus Epitaxy

P.H Morel , J.M Hartmann , Céline Morin , P. Faucherand , S. Perraud , et al.
MRS Fall meeting 2010, Nov 2010, Boston, United States
Communication dans un congrès hal-00650216v1

Influence of the Dielectric Environment on the Absorption Properties of Single Silicon Nanowires

A. Solanki , N. Pauc , P. Gentile , V. Calvo , G. Rosaz , et al.
E-MRS Strasbourg (2012), 2012, Strasbourg, France
Communication dans un congrès hal-00762162v1

AFM measurement of Young modulus and piezoelectricity on individual nanostructures

Laurent Montès , Xin Xu , Alexis Potié , Bogdan Bercu , Ronan Hinchet , et al.
Workshop on ``New trends in Electrical Scanning Probe Microscopies'', Oct 2010, Grenoble, France
Communication dans un congrès hal-00604966v1

Si and SiGe Nanowires Field-effect Transistors Study Toward Vertical Integration

G. Rosaz , B. Salem , N. Pauc , T. Baron , P. Gentile , et al.
Colloque LIA-LN2, Jul 2011, Allevard les bains, France
Communication dans un congrès hal-00647422v1

Elaboration and Characterization of Si-SiGe Axial Heterostructures in Nanowires, poster presentation

P. Periwal , F. Bassani , G. Patriarche , L. Latu-Romain , V. Brouzet , et al.
E- Materials Research Society, Spring Meeting, May 2013, Strasbourg, France
Communication dans un congrès hal-00950046v1

SiC-based nanowires and nanotubes for harsh and biological environments

M. Ollivier , L. Latu-Romain , M. Martin , A. Mantoux , B. Salem , et al.
International Conference on One-dimensional Nanomaterials, Sep 2013, Annecy, France
Communication dans un congrès hal-00950044v1