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2D-arrays of Si nanocrystals embedded in thin SiO2 layers for new memory devices
M. Perego
,
S. Ferrari
,
M. Fanciulli
,
D. Mathiot
,
K.H. Heinig
,
et al.
INFMeeting 2004, Jun 2004, Genova, Italy
Communication dans un congrès
hal-00134298v1
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Current understanding and modelling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions
Bernard Colombeau
,
A. Smith
,
N.E.B. Cowern
,
B. Pawlak
,
Fuccio Cristiano
,
et al.
2004, pp.91-102
Communication dans un congrès
hal-00140989v1
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Une technique de détermination du champ de vitesse dans le front d'une flamme se propageant dans une chambre cylindrique
B. Veyssiere
,
Alain Claverie
,
N. Henneton
,
B. Ponizy
11ème congrès francophone de techniques laser, Sep 2008, Poitiers, France. pp.507-513
Communication dans un congrès
hal-00419262v1
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Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy
L. Vincent
,
F. Fossard
,
T. Kociniewski
,
L. Largeau
,
Nikolay Cherkashin
,
et al.
Article dans une revue
istex
hal-01736031v1
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On the modelling of transient diffusion and activation of boron during post-implantation annealing
P. Pichler
,
C.J. Ortiz
,
B. Colombeau
,
N.E.B. Cowern
,
E. Lampin
,
et al.
International Electron Devices Meeting, IEDM 2004, 2004, San Francisco, CA, United States
Communication dans un congrès
hal-00141013v1
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Laser driven shock wave decay and spall damage within metallic targets in sub-picosecond regime
J.-P. Cuq-Lelandais
,
M. Boustie
,
L. Soulard
,
L. Berthe
,
J. Bontaz-Carion
,
et al.
DYMAT 2009, Sep 2009, Bruxelles, Belgium
Communication dans un congrès
hal-00421213v1
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Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2
B. Garrido Fernandez
,
M. López
,
C. García
,
A. Pérez-Rodríguez
,
J. Morante
,
et al.
Article dans une revue
hal-02356107v1
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Si and Ge nanocrystals for future memory devices
Caroline Bonafos
,
Marzia Carrada
,
Gérard Benassayag
,
Sylvie Schamm-Chardon
,
Jesse Groenen
,
et al.
Article dans une revue
istex
hal-01745013v1
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Strain mapping of advanced electronic devices by TEM based methods.
Alain Claverie
,
Victor Boureau
,
David N Cooper
International Conference on Microscopy and 39th Annual meeting of EMSI, Jul 2018, Bhubaneswar, India
Communication dans un congrès
hal-01767810v1
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SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy
Y. Bogumilowicz
,
J.M. Hartmann
,
Nikolay Cherkashin
,
Alain Claverie
,
G. Rolland
,
et al.
Article dans une revue
istex
hal-01736080v1
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(Invited) Impact of Some Processing Steps onto the Strain Distributions in FD-SOI CMOS Planar Devices: A Contribution of Dark-Field Electron Holography
Victor Boureau
,
Daniel Benoit
,
Alain Claverie
ECS Transactions, 2018, 86 (10), pp.37-50
Article dans une revue
hal-02057250v1
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Characterization of Process-Induced Defects
Nikolay Cherkashin
,
Alain Claverie
Alain Claverie ; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.165--198, 2013, ⟨10.1002/9781118579022.ch7⟩
Chapitre d'ouvrage
hal-01736027v1
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Process induced strains in FDSOI devices: a contribution of dark-field electron holography
Victor Boureau
,
Martin Hÿtch
,
Benoit Daniel
,
Alain Claverie
Micro and Nano 2015, Oct 2015, Athenes, Greece
Communication dans un congrès
hal-01763625v1
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Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon
Nabil Daghbouj
,
Nikolay Cherkashin
,
François-Xavier Darras
,
Vincent Paillard
,
M. Fnaiech
,
et al.
Article dans une revue
hal-01719485v1
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Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride
T. Clua-Provost
,
A. Durand
,
Z. Mu
,
T. Rastoin
,
J. Fraunié
,
et al.
Article dans une revue
hal-04258293v1
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Laser annealing for n+/p junction formation in germanium
P. Tsouroutas
,
D. Tsoukalas
,
A. Florakis
,
I. Zergioti
,
A.A. Serafetinides
,
et al.
Article dans une revue
istex
hal-01736078v1
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Sequential He++H+ ion implantation in silicon: factors affecting blistering”
Nikolay Cherkashin
,
Nabil Daghbouj
,
Alain Claverie
4th International Conference On Nano Structuring by Ion Beam (ICNIB 2017), Oct 2017, Indore, India
Communication dans un congrès
hal-01763083v1
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Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate
Nikolay Cherkashin
,
Adrien Gouye
,
Florian Hüe
,
Florent Houdellier
,
Martin Hÿtch
,
et al.
Communication dans un congrès
hal-01736065v1
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Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantation
J Grisolia
,
M Shalchian
,
Gérard Benassayag
,
H. Coffin
,
Caroline Bonafos
,
et al.
Article dans une revue
istex
hal-01745050v1
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Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs
Victor Boureau
,
Aurèle Durand
,
Patrice Gergaud
,
Delphine Le Cunff
,
Matthew Wormington
,
et al.
Article dans une revue
hal-03001931v1
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Size and aerial density distributions of Ge nanocrystals in a SiO 2 layer produced by molecular beam epitaxy and rapid thermal processing
A. Kanjilal
,
J.L. Hansen
,
P. Gaiduk
,
A.N. Larsen
,
P. Normand
,
et al.
Article dans une revue
istex
hal-01736082v1
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Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5
Minh Anh Luong
,
Nikolay Cherkashin
,
Béatrice Pécassou
,
Chiara Sabbione
,
Frédéric Mazen
,
et al.
Article dans une revue
hal-03375510v1
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Design / technology co-optimization of strain-induced layout effects in 14nm UTBB-FDSOI CMOS: Enablement and assessment of continuous-RX designs
Rémy Berthelon
,
F. Andrieu
,
E. Josse
,
R. Bingert
,
O. Weber
,
et al.
Communication dans un congrès
hal-01719493v1
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Fabrication of nanocrystal memories by ultra low energy ion implantation
Nikolay Cherkashin
,
Caroline Bonafos
,
H. Coffin
,
Marzia Carrada
,
Sylvie Schamm-Chardon
,
et al.
Article dans une revue
hal-01736090v1
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Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers
H. Coffin
,
Caroline Bonafos
,
Sylvie Schamm-Chardon
,
Nikolay Cherkashin
,
Marc Respaud
,
et al.
Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.281-286, ⟨10.1557/PROC-830-D6.6⟩
Communication dans un congrès
hal-01736087v1
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Etude expérimentale de l'influence du ratio de vitesse sur le mélange dans une configuration de jet turbulent réactif Hydogène/air subsonique à haute vitesse
J. Grondin
,
Alain Claverie
,
M. Bellenoue
11 Congrès Français des Techniques Laser, Futuroscope, Sep 2008, futuroscope, France. pp.00
Communication dans un congrès
hal-00360547v1
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Système de vélocimétrie par image de particule (PIV) à haute fréquence et très haute résolution pour l'étude du phénomène de coincement de flamme
M. Karrer
,
M. Bellenoue
,
J. Sotton
,
S. Labuda
,
Alain Claverie
11 Congrès Français des Techniques Laser, Sep 2008, futuroscope, France. pp.00
Communication dans un congrès
hal-00360553v1
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Interaction laser-matière en régime ultra-bref : application à la propagation d'ondes de choc dans les solides
J.-P. Cuq-Lelandais
,
M. Boustie
,
T. de Resseguier
,
E. Lescoute
,
Alain Claverie
,
et al.
IRMDSP : 24-26 Septembre 2008, Saclay INSTN Interaction rayonnement matière : du solide au plasma, Sep 2008, Saclay, France
Communication dans un congrès
hal-00419361v1
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Diffusion and activation of dopants in silicon and advanced silicon-based materials
P. Pichler
,
C.J. Ortiz
,
B. Colombeau
,
N.E.B. Cowern
,
E. Lampin
,
et al.
Physica Scripta, 2006, T126, pp.89-96
Article dans une revue
hal-00138673v1
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Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices
Nikolay Cherkashin
,
Alain Claverie
,
D. Sotta
,
J.-M. Bethoux
,
L. Capello
,
et al.
Article dans une revue
hal-01736033v1
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