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Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

 L. Vincent , F. Fossard , T. Kociniewski , L. Largeau , Nikolay Cherkashin , et al.
Applied Surface Science, 2012, 258 (23), pp.9208-9212. ⟨10.1016/j.apsusc.2011.07.074⟩
Article dans une revue istex hal-01736031v1

(Invited) Impact of Some Processing Steps onto the Strain Distributions in FD-SOI CMOS Planar Devices: A Contribution of Dark-Field Electron Holography

 Victor Boureau , Daniel Benoit , Alain Claverie
ECS Transactions, 2018, 86 (10), pp.37-50
Article dans une revue hal-02057250v1

2D-arrays of Si nanocrystals embedded in thin SiO2 layers for new memory devices

 M. Perego , S. Ferrari , M. Fanciulli , D. Mathiot , K.H. Heinig , et al.
INFMeeting 2004, Jun 2004, Genova, Italy
Communication dans un congrès hal-00134298v1

Current understanding and modelling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions

 Bernard Colombeau , A. Smith , N.E.B. Cowern , B. Pawlak , Fuccio Cristiano , et al.
2004, pp.91-102
Communication dans un congrès hal-00140989v1

On the modelling of transient diffusion and activation of boron during post-implantation annealing

 P. Pichler , C.J. Ortiz , B. Colombeau , N.E.B. Cowern , E. Lampin , et al.
International Electron Devices Meeting, IEDM 2004, 2004, San Francisco, CA, United States
Communication dans un congrès hal-00141013v1

Une technique de détermination du champ de vitesse dans le front d'une flamme se propageant dans une chambre cylindrique

 B. Veyssiere , Alain Claverie , N. Henneton , B. Ponizy
11ème congrès francophone de techniques laser, Sep 2008, Poitiers, France. pp.507-513
Communication dans un congrès hal-00419262v1

Laser driven shock wave decay and spall damage within metallic targets in sub-picosecond regime

 J.-P. Cuq-Lelandais , M. Boustie , L. Soulard , L. Berthe , J. Bontaz-Carion , et al.
DYMAT 2009, Sep 2009, Bruxelles, Belgium
Communication dans un congrès hal-00421213v1

Strain mapping of advanced electronic devices by TEM based methods.

 Alain Claverie , Victor Boureau , David N Cooper
International Conference on Microscopy and 39th Annual meeting of EMSI, Jul 2018, Bhubaneswar, India
Communication dans un congrès hal-01767810v1

SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

 Y. Bogumilowicz , J.M. Hartmann , Nikolay Cherkashin , Alain Claverie , G. Rolland , et al.
Materials Science and Engineering: B, 2005, 124-125 (SUPPL.), pp.113-117. ⟨10.1016/j.mseb.2005.08.052⟩
Article dans une revue istex hal-01736080v1

Characterization of Process-Induced Defects

 Nikolay Cherkashin , Alain Claverie
Alain Claverie ; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.165--198, 2013, ⟨10.1002/9781118579022.ch7⟩
Chapitre d'ouvrage hal-01736027v1

Si and Ge nanocrystals for future memory devices

 Caroline Bonafos , Marzia Carrada , Gérard Benassayag , Sylvie Schamm-Chardon , Jesse Groenen , et al.
Materials Science in Semiconductor Processing, 2012, 15 (6), pp.615-626. ⟨10.1016/j.mssp.2012.09.004⟩
Article dans une revue istex hal-01745013v1

Process induced strains in FDSOI devices: a contribution of dark-field electron holography

 Victor Boureau , Martin Hÿtch , Benoit Daniel , Alain Claverie
Micro and Nano 2015, Oct 2015, Athenes, Greece
Communication dans un congrès hal-01763625v1
Image document

Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

 Nabil Daghbouj , Nikolay Cherkashin , François-Xavier Darras , Vincent Paillard , M. Fnaiech , et al.
Journal of Applied Physics, 2016, 119 (13), pp.135308 - 245301. ⟨10.1063/1.4945032⟩
Article dans une revue hal-01719485v1

Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2

 B. Garrido Fernandez , M. López , C. García , A. Pérez-Rodríguez , J. Morante , et al.
Journal of Applied Physics, 2002, 91 (2), pp.798-807. ⟨10.1063/1.1423768⟩
Article dans une revue hal-02356107v1
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Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride

 T. Clua-Provost , A. Durand , Z. Mu , T. Rastoin , J. Fraunié , et al.
Physical Review Letters, 2023, 131 (12), pp.126901. ⟨10.1103/PhysRevLett.131.126901⟩
Article dans une revue hal-04258293v1

Laser annealing for n+/p junction formation in germanium

 P. Tsouroutas , D. Tsoukalas , A. Florakis , I. Zergioti , A.A. Serafetinides , et al.
Materials Science in Semiconductor Processing, 2006, 9 (4-5), pp.644--649. ⟨10.1016/j.mssp.2006.08.013⟩
Article dans une revue istex hal-01736078v1

Sequential He++H+ ion implantation in silicon: factors affecting blistering”

 Nikolay Cherkashin , Nabil Daghbouj , Alain Claverie
4th International Conference On Nano Structuring by Ion Beam (ICNIB 2017), Oct 2017, Indore, India
Communication dans un congrès hal-01763083v1

Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate

 Nikolay Cherkashin , Adrien Gouye , Florian Hüe , Florent Houdellier , Martin Hÿtch , et al.
ECS Transactions, May 2008, Unknown, Unknown Region. ⟨10.1149/1.2911510⟩
Communication dans un congrès hal-01736065v1

Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantation

 J Grisolia , M Shalchian , Gérard Benassayag , H. Coffin , Caroline Bonafos , et al.
Materials Science and Engineering: B, 2005, 124, pp.494-498. ⟨10.1016/j.mseb.2005.08.082⟩
Article dans une revue istex hal-01745050v1
Image document

Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs

 Victor Boureau , Aurèle Durand , Patrice Gergaud , Delphine Le Cunff , Matthew Wormington , et al.
Journal of Applied Crystallography, 2020, 53 (4), pp.885-895. ⟨10.1107/S1600576720006020⟩
Article dans une revue hal-03001931v1

Size and aerial density distributions of Ge nanocrystals in a SiO 2 layer produced by molecular beam epitaxy and rapid thermal processing

 A. Kanjilal , J.L. Hansen , P. Gaiduk , A.N. Larsen , P. Normand , et al.
Applied physics. A, Materials science & processing, 2005, 81 (2), pp.363-366. ⟨10.1007/s00339-004-2924-3⟩
Article dans une revue istex hal-01736082v1
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Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5

 Minh Anh Luong , Nikolay Cherkashin , Béatrice Pécassou , Chiara Sabbione , Frédéric Mazen , et al.
Nanomaterials, 2021, 11 (7), pp.1729. ⟨10.3390/nano11071729⟩
Article dans une revue hal-03375510v1

Design / technology co-optimization of strain-induced layout effects in 14nm UTBB-FDSOI CMOS: Enablement and assessment of continuous-RX designs

 Rémy Berthelon , F. Andrieu , E. Josse , R. Bingert , O. Weber , et al.
VLSI Technology, 2016 IEEE Symposium on, 2016, Unknown, Unknown Region. ⟨10.1109/VLSIT.2016.7573425⟩
Communication dans un congrès hal-01719493v1
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Fabrication of nanocrystal memories by ultra low energy ion implantation

 Nikolay Cherkashin , Caroline Bonafos , H. Coffin , Marzia Carrada , Sylvie Schamm-Chardon , et al.
physica status solidi (c), 2005, 2 (6), pp.1907--1911. ⟨10.1002/pssc.200460523⟩
Article dans une revue hal-01736090v1

Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers

 H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Nikolay Cherkashin , Marc Respaud , et al.
Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.281-286, ⟨10.1557/PROC-830-D6.6⟩
Communication dans un congrès hal-01736087v1

Etude expérimentale de l'influence du ratio de vitesse sur le mélange dans une configuration de jet turbulent réactif Hydogène/air subsonique à haute vitesse

 J. Grondin , Alain Claverie , M. Bellenoue
11 Congrès Français des Techniques Laser, Futuroscope, Sep 2008, futuroscope, France. pp.00
Communication dans un congrès hal-00360547v1

Système de vélocimétrie par image de particule (PIV) à haute fréquence et très haute résolution pour l'étude du phénomène de coincement de flamme

 M. Karrer , M. Bellenoue , J. Sotton , S. Labuda , Alain Claverie
11 Congrès Français des Techniques Laser, Sep 2008, futuroscope, France. pp.00
Communication dans un congrès hal-00360553v1

Interaction laser-matière en régime ultra-bref : application à la propagation d'ondes de choc dans les solides

 J.-P. Cuq-Lelandais , M. Boustie , T. de Resseguier , E. Lescoute , Alain Claverie , et al.
IRMDSP : 24-26 Septembre 2008, Saclay INSTN Interaction rayonnement matière : du solide au plasma, Sep 2008, Saclay, France
Communication dans un congrès hal-00419361v1

Diffusion and activation of dopants in silicon and advanced silicon-based materials

 P. Pichler , C.J. Ortiz , B. Colombeau , N.E.B. Cowern , E. Lampin , et al.
Physica Scripta, 2006, T126, pp.89-96
Article dans une revue hal-00138673v1
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Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices

 Nikolay Cherkashin , Alain Claverie , D. Sotta , J.-M. Bethoux , L. Capello , et al.
Applied Physics Letters, 2012, 101 (2), pp.023105. ⟨10.1063/1.4733619⟩
Article dans une revue hal-01736033v1
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